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    • 4. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 半导体发光器件
    • US20120104439A1
    • 2012-05-03
    • US13173392
    • 2011-06-30
    • Kyu Sang KIM
    • Kyu Sang KIM
    • H01L33/50
    • H01L33/501H01L33/08H01L33/20H01L33/505H01L2224/48091H01L2224/48247H01L2224/73265H01L2933/0091H01L2924/00014
    • A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.
    • 半导体发光器件包括:发光结构,包括第一导电半导体层,有源层和第二导电半导体层; 以及波长转换层,形成在由包含荧光体颗粒的透光材料制成并且在其中具有空隙的发光结构的发光表面的至少一部分上。 半导体发光器件包括:发光结构,包括第一导电半导体层,有源层和第二导电半导体层; 以及波长转换层,其形成在由包含荧光体颗粒或量子点的透光材料制成并且在其中具有空隙的发光结构的发光表面的至少一部分上。