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    • 2. 发明申请
    • DIGITAL SIGNAGE SYSTEM
    • 数字信号系统
    • US20120327826A1
    • 2012-12-27
    • US13473524
    • 2012-05-16
    • Yung-cheng LinKuo-feng Huang
    • Yung-cheng LinKuo-feng Huang
    • H04W4/00
    • H04W4/001H04W4/50H04W88/16
    • A digital signage system, includes: a gateway device, coupled to a network; at least one first hot spot, including: an adaptor box, coupled to the gateway device, downloading a content transmitted through the network via the gateway device; a first access point device, coupled to the gateway device, downloading a service on the network via the gateway device; and a display device, coupled to the adaptor box, displaying the content through the adaptor box, and at least one second hot spot, including: a second access point device, coupled to the gateway device, downloading the service via the gateway device, wherein the first access point device and the second access point device provide the service to at least one mobile terminal through wireless communication.
    • 一种数字标牌系统,包括:网络设备,耦合到网络; 至少一个第一热点,包括:耦合到所述网关设备的适配器盒,经由所述网关设备下载通过所述网络传输的内容; 耦合到所述网关设备的第一接入点设备,经由所述网关设备在所述网络上下载服务; 以及耦合到适配器盒的显示设备,通过适配器盒显示内容,以及至少一个第二热点,包括:耦合到网关设备的第二接入点设备,经由网关设备下载服务,其中, 第一接入点设备和第二接入点设备通过无线通信向至少一个移动终端提供服务。
    • 4. 发明授权
    • Method for electroplated metal annealing process
    • 电镀金属退火方法
    • US06827835B2
    • 2004-12-07
    • US10105313
    • 2002-03-26
    • Neng-Hui YangKuo Feng HuangTsung-Tang Hsieh
    • Neng-Hui YangKuo Feng HuangTsung-Tang Hsieh
    • C25D548
    • H01L21/76883C25D5/50C25D7/12H01L21/2885
    • A method for electroplated metal annealing process. First, a semiconductor structure is provided, wherein the semiconductor structure has a plurality of semiconductor components, such as a gate electrode, a source region and a drain region, and a field oxide region. Second, a dielectric layer is formed over the semiconductor structure, and a via which exposes a part of the semiconductor structure is formed in the dielectric layer by the use of conventional lithographic and etching processes and an electroplated metal layer is formed over the dielectric layer; meanwhile, the via is filled with the electroplated metal layer. The electroplated metal layer is then annealed by a NH3 plasma process performed by plasma enhanced chemical vapor deposition (PECVD).
    • 一种电镀金属退火工艺的方法。 首先,提供半导体结构,其中半导体结构具有多个半导体元件,例如栅电极,源极区和漏极区以及场氧化物区。 其次,在半导体结构上形成电介质层,并且通过使用常规的光刻和蚀刻工艺在电介质层中形成暴露一部分半导体结构的通孔,并且在电介质层上形成电镀金属层; 同时,通孔填充有电镀金属层。 然后通过等离子体增强化学气相沉积(PECVD)进行的NH 3等离子体处理使电镀金属层退火。
    • 5. 发明授权
    • Equipment for brushing the underside of a semiconductor wafer
    • 用于刷涂半导体晶片下侧的设备
    • US06295683B1
    • 2001-10-02
    • US09457308
    • 1999-12-09
    • Kuei-Si LaiShih-Hsun ChiouKuo-Feng HuangChing-Chih Cheng
    • Kuei-Si LaiShih-Hsun ChiouKuo-Feng HuangChing-Chih Cheng
    • B08B104
    • B08B1/04B08B3/02
    • The present invention provides equipment for brushing the underside of a semiconductorwafer that is placed on a rotary wafer chuck. The equipment comprises a brush rod, a brush with a channel in it mounted at an end point of the brush rod, a nozzle for spraying water on the underside of the semiconductor wafer, and a driving device connected to the brush rod for driving the brush rod in a reciprocating motion. The wafer chuck rotates the semiconductor wafer and, simultaneously, water drives the blade and the brush to raise and rotate so as to spray water over the underside of the semiconductor wafer. The driving device drives the brush to brush the underside of the semiconductor wafer along a radial direction of the semiconductor wafer.
    • 本发明提供了用于刷涂放置在旋转晶片卡盘上的半导体晶片的下侧的设备。 该设备包括一个刷杆,一个刷子,其中安装在刷杆端部的通道,用于在半导体晶片的下侧喷水的喷嘴,以及连接到刷杆的驱动装置,用于驱动刷子 杆往复运动。 晶片卡盘旋转半导体晶片,同时,水驱动叶片和刷子以升高和旋转,以便在半导体晶片的下侧喷射水。 驱动装置驱动刷子沿着半导体晶片的径向刷刷半导体晶片的下侧。