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    • 1. 发明授权
    • Probing test apparatus
    • 探测试验机
    • US5703494A
    • 1997-12-30
    • US553013
    • 1995-11-03
    • Kunio Sano
    • Kunio Sano
    • G01R1/073G01R1/067H01L21/66G01R31/02
    • G01R1/06705
    • A probing test apparatus comprising a probe card having a plurality of probes and first terminals contacted with and electrically connected to conductive pads of a circuit, a test head having a signal transmitting circuit through which the test signal is transmitted to the probes, a performance board having second terminals electrically connected to the signal transmitting circuit, a contact ring interposed between the performance board and the probe card and whose impedance has been adjusted, a plurality of first-type pogopins each having a pair of pin members contacting the first and second terminals to transmit the test signal to the probes, and a plurality of second-type pogopins each having a pair of pin members contacting the first and second terminals, the second-type pogopins being arranged in the contact ring, surrounding each first-type pogopin in a plane perpendicular to the axes of the pin members, and electrically connected to the first terminal grounded.
    • 一种探测测试装置,包括具有多个探针的探针和与电路的导电焊盘接触并电连接到电路的导电焊盘的探针卡,具有信号传输电路的测试头,测试信号通过该测试头传输到探头,演奏板 具有电连接到所述信号传输电路的第二端子,插入在所述性能板和所述探针卡之间并且阻抗已被调节的接触环,多个第一类型的pogopins,每个具有一对与所述第一和第二端子 将测试信号传输到探针,以及多个第二种类的pogopins,每个具有一对针构件接触第一和第二端子,第二类型的pogopins布置在接触环中,围绕每个第一类型的pogopin 垂直于销构件的轴线的平面,并且电连接到第一端子接地。
    • 2. 发明授权
    • Method of treating exhaust gas
    • 废气处理方法
    • US5254797A
    • 1993-10-19
    • US981983
    • 1992-11-24
    • Yoshinori ImotoKatsunosuke HaraMasakatsu HiraokaKunio SanoAkira Inoue
    • Yoshinori ImotoKatsunosuke HaraMasakatsu HiraokaKunio SanoAkira Inoue
    • B01D53/86A62D3/00C01B7/00F23G5/00
    • B01D53/8668B01D53/8662
    • A catalyst composition including component A and component B, the component A being a carrier, preferably having a honeycomb structure, and being a single-component oxide or a multi-component composite oxide of at least one metal of titanium, silicon and zirconium, and the component B being a catalyst component deposited on the carrier of component A and being at least one member selected from the group of noble metals and other specifically limited metals and their oxides, is very effective for decomposing and removing poisonous organic chlorine compounds, such as dioxin and the like, or poisonous organic chlorine compound-forming substances contained in an exhaust gas exhausted from an incinerator of an incineration plant provided with the incinerator and a dust collector. In addition, and the generation of the poisonous organic chlorine compound from the incineration plant can be prevented.
    • 包含组分A和组分B的催化剂组合物,组分A是载体,优选具有蜂窝结构,并且是至少一种钛,硅和锆的金属的单组分氧化物或多组分复合氧化物,以及 组分B是沉积在组分A的载体上的催化剂组分,并且是选自贵金属和其它特别有限的金属及其氧化物中的至少一种,对于分解和除去有毒的有机氯化合物是非常有效的,例如 二恶英等,或从设置有焚化炉的焚烧厂的焚化炉排出的排气中含有的有机的含氯化合物形成物质和集尘器。 此外,可以防止来自焚烧装置的有机有机氯化合物的产生。
    • 3. 发明授权
    • Method and apparatus for inspecting semiconductor integrated circuits,
and contactor incorporated in the apparatus
    • 用于检查半导体集成电路的方法和装置以及包含在该装置中的接触器
    • US6084419A
    • 2000-07-04
    • US28091
    • 1998-02-23
    • Takashi SatoKunio Sano
    • Takashi SatoKunio Sano
    • G01R31/28G01R31/02G01R1/04G01R31/302
    • G01R31/2886
    • A wafer inspecting apparatus inspects the electric characteristics of IC chips of a wafer W. The inspection is carried out by simultaneously examining the inspecting electrodes of all IC chips in a contact manner in the state where the wafer W is held on the main chuck. The wafer inspecting apparatus is provided with a contactor, and this contactor is made up of a first contactor, a second contactor and a driving mechanism. The first contactor has a large number of contact projections on the lower surface thereof and a large number of contact electrodes on the entire upper surface thereof. The contact projections are brought into simultaneous contact with the inspecting electrodes. The contact electrodes are electrically connected to the contact projections, respectively. The second contactor has a number of contact elements, such as pogo-pins, which are brought into contact with the contact electrodes of the first contactor. The second contactor is movable, and the driving mechanism moves this second contactor in the X- and Y-directions in such a manner that the contact elements and the contact electrodes are sequentially brought into contact with each other. The contactor may include a third contactor as well. The third contactor is arranged between the first contactor and the wafer W.
    • 晶片检查装置检查晶片W的IC芯片的电特性。通过在将晶片W保持在主卡盘上的状态下以接触方式同时检查所有IC芯片的检查电极来进行检查。 晶片检查装置设有接触器,该接触器由第一接触器,第二接触器和驱动机构构成。 第一接触器在其下表面上具有大量接触突起,并且在其整个上表面上具有大量的接触电极。 接触突起与检查电极同时接触。 接触电极分别与接触突起电连接。 第二接触器具有与第一接触器的接触电极接触的多个接触元件,例如弹簧销。 第二接触器是可移动的,并且驱动机构使得第二接触器在X方向和Y方向上移动,使得接触元件和接触电极相互接触。 接触器也可以包括第三接触器。 第三接触器布置在第一接触器和晶片W之间。
    • 4. 发明授权
    • Membrane probing of circuits
    • 电路膜探测
    • US5847571A
    • 1998-12-08
    • US675416
    • 1996-07-03
    • Ken Kuang-Fu LiuByoung-Youl MinKunio SanoTakashi Sato
    • Ken Kuang-Fu LiuByoung-Youl MinKunio SanoTakashi Sato
    • G01R1/073H01L21/66
    • G01R1/0735
    • First and second bumps electrically connected at first and second positions along a conductive run borne by a flexible substrate are respectively oriented for contact with a pad of a die under test and a pad of a tester. A probe frame is bonded to the substrate between connector frames bonded at opposite ends of the substrate. Alternatively, a pair of bumps exposed on the same surface of a flexible substrate are electrically connected at different positions along a conductive run. One of the bumps is oriented for contact with a pad of a die under test, and the other is in contact with a pad on a surface of a printed circuit board directed away from the die. The pad of the printed circuit board is provided for electrical connection to a tester.
    • 沿着沿着由柔性基板传导的导体的第一和第二位置电连接的第一和第二凸起分别被定向成与被测试模具的焊盘和测试仪的焊盘接触。 探针架结合在衬底的相对两端的连接器框架之间的基片上。 或者,暴露在柔性基板的相同表面上的一对凸块在导电性行程的不同位置电连接。 凸块中的一个被定向成与待测试的模具的焊盘接触,另一个与印刷电路板的远离模具的表面上的焊盘接触。 印刷电路板的焊盘被提供用于电连接到测试仪。
    • 6. 发明授权
    • Probing method and device
    • 探测方法和装置
    • US5559446A
    • 1996-09-24
    • US276847
    • 1994-07-18
    • Kunio Sano
    • Kunio Sano
    • G01R1/073G01R31/02
    • G01R1/0735Y10T29/4913
    • A probing device for inspecting semiconductor devices such as IC chips includes a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si.sub.3 N.sub.4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide thin film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film. A plurality of through holes are formed penetrating from the upper surface of the wiring substrate to the lower surface of the silicon nitride film at an area outside the bump arrangement region. These through holes mechanically connect the silicon nitride thin film to the wiring substrate and further electrically connect the bumps to the circumferential portion of the probe card body via the conductive layers. Since the thermal expansion coefficient of the silicon wafer is roughly equal to that of the silicon nitride thin film of the probe card, even when the silicon wafer is heated or cooled for electrical measurements, it is possible to securely keep contact between the contacts (bumps) of the probe card and the electrode pads formed on the IC chips of the wafer without dislocation.
    • 用于检查诸如IC芯片的半导体器件的探测装置包括用于支撑硅衬底晶片(即,待检查对象)的安装部分,用于移动探针卡的移动部分,使得形成在表面上的触点 可以将探针卡推压到形成在晶片上的电极焊盘和测量部分。 探针卡通过将布线基板的下表面的氮化硅(Si 3 N 4)薄膜(其热膨胀系数与硅晶片的热膨胀系数大致相等)而形成。 布线基板由聚酰胺薄膜(绝缘层)和形成在聚酰胺薄膜的两个表面上的导电层(作为导电信号线路径)构成。 此外,在氮化硅薄膜的下表面上设置凸块(触点)。 多个通孔从布线基板的上表面穿过凸起布置区域外侧的区域形成到氮化硅膜的下表面。 这些通孔将氮化硅薄膜机械地连接到布线基板,并且通过导电层进一步将凸块电连接到探针卡体的圆周部分。 由于硅晶片的热膨胀系数与探针卡的氮化硅薄膜的热膨胀系数大致相同,所以即使将硅晶片加热或冷却进行电气测量,也可以牢固地保持触点之间的接触 )和形成在晶片的IC芯片上的电极焊盘,而不脱位。
    • 8. 发明授权
    • Catalyst for treating wastewater
    • 处理废水的催化剂
    • US5399541A
    • 1995-03-21
    • US878978
    • 1992-05-06
    • Tohru IshiiKiichiro MitsuiKunio SanoKeniti ShishidaYusuke Shiota
    • Tohru IshiiKiichiro MitsuiKunio SanoKeniti ShishidaYusuke Shiota
    • B01J23/745B01J23/75B01J23/755B01J23/83B01J23/89B01J37/03C02F1/72B01J21/06B01J21/08B01J23/74
    • C02F1/725B01J23/745B01J23/75B01J23/755B01J23/83B01J23/8906B01J37/03
    • The present invention provides a catalyst used in wastewater treatment process wherein not only an organic compound not containing nitrogen, sulfur or halogen is decomposed, but also a nitrogen-containing compound, a sulfur-containing compound and an organic halogeno compound are effectively decomposed, thereby wastewater are treated with excellent efficiency for a long period of time. The invention also provides a production process for the catalyst and said wastewater treatment process. The first catalyst comprises: an oxide of iron as an A component; and at least one kind of element as a B component selected from a group consisting of cobalt, nickel, cerium, silver, gold, platinum, palladium, rhodium, ruthenium and iridium. The second catalyst comprises: an oxide as an A component containing iron and at least one kind of element selected from a group consisting of titanium, silicon and zirconium; and at least one kind of element as a B component selected from a group consisting of cobalt, nickel, cerium, silver, gold, platinum, palladium, rhodium, ruthenium and iridium.
    • 本发明提供了一种用于废水处理方法的催化剂,其中不仅分解不含氮,硫或卤素的有机化合物,而且有效地分解含氮化合物,含硫化合物和有机卤代化合物,从而 废水长期处理效率高。 本发明还提供了催化剂和所述废水处理方法的生产方法。 第一催化剂包括:作为A成分的铁的氧化物; 以及选自钴,镍,铈,银,金,铂,钯,铑,钌和铱中的至少一种作为B成分的元素。 第二催化剂包括:作为含铁的A成分的氧化物和选自钛,硅和锆的至少一种元素; 以及选自钴,镍,铈,银,金,铂,钯,铑,钌和铱中的至少一种作为B成分的元素。