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1. 发明授权

US07913281B2 Digital broadcast recording device 有权
标题翻译：数字广播录音设备
公开(公告)号：US07913281B2
公开(公告)日：2011-03-22
申请号：US11861004
申请日：2007-09-25
申请人： Koji Nozaki , Akihiro Yuba
发明人： Koji Nozaki , Akihiro Yuba
IPC分类号： G06F3/00 , H04N5/76 , H04N5/222
CPC分类号： H04N5/50 , H04N5/76 , H04N5/781 , H04N5/85 , H04N9/8042 , H04N9/8715 , H04N21/4147 , H04N21/4334 , H04N21/4345 , H04N21/4383 , H04N21/485
摘要： This digital broadcast recording device includes a tuner unit, a channel table recording unit, an image output unit, an OSD generation unit, an actuation unit, and a channel presetting unit. The channel table recording unit records a channel table. An auto presetting unit sets virtual channels. If the number of a virtual channel is duplicated upon several physical channels, the channel presetting unit commands the OSD generation unit to display an OSD to the effect that this number is duplicated. And, when the actuation unit has received a predetermined actuation input, the channel presetting unit searches for a vacant channel.
摘要翻译：该数字广播记录装置包括调谐器单元，频道表记录单元，图像输出单元，OSD生成单元，致动单元和频道预设单元。通道表记录单元记录通道表。自动预设单元设置虚拟通道。如果虚拟频道的数量在多个物理频道上被复制，则频道预设单元命令OSD生成单元显示OSD，以使该号码重复。并且，当致动单元已经接收到预定的致动输入时，通道预设单元搜索空闲通道。

2. 发明授权

US08748077B2 Resist pattern improving material, method for forming resist pattern, method for producing semiconductor device, and semiconductor device 有权
标题翻译：抗蚀剂图案改善材料，形成抗蚀剂图案的方法，半导体器件的制造方法和半导体器件
公开(公告)号：US08748077B2
公开(公告)日：2014-06-10
申请号：US13358892
申请日：2012-01-26
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： G03F7/004 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/405 , H01L21/31144 , H01L21/76802
摘要： To provide a resist pattern improving material, containing: water; and benzalkonium chloride represented by the following general formula (1): where n is an integer of 8 to 18.
摘要翻译：提供抗蚀剂图案改善材料，含有：水; 和由以下通式（1）表示的苯扎氯铵：其中n为8至18的整数。

3. 发明授权

US08476346B2 Resist pattern thickening material, semiconductor device, and production method thereof 有权
标题翻译：抗蚀图案增厚材料，半导体器件及其制造方法
公开(公告)号：US08476346B2
公开(公告)日：2013-07-02
申请号：US12713876
申请日：2010-02-26
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： C08K5/15
CPC分类号： H01L21/0273 , C08L5/16 , C08L29/04 , C09D105/16 , C09D129/04 , G03F7/40 , H01L21/31144 , H01L21/76816 , C08L31/04 , C08L39/06
摘要： A resist pattern thickening material containing a resin, a cyclic compound expressed by the general formula 1, at least one of compounds expressed by the general formulae 2 to 3, respectively, and water:
摘要翻译：含有树脂的抗蚀剂图案增稠材料，由通式1表示的环状化合物，分别由通式2〜3表示的化合物和水中的至少一种：

4. 发明授权

US08449787B2 Method for wet etching while forming interconnect trench in insulating film 失效
标题翻译：在绝缘膜中形成互连沟槽时进行湿蚀刻的方法
公开(公告)号：US08449787B2
公开(公告)日：2013-05-28
申请号：US12035832
申请日：2008-02-22
申请人： Tadahiro Imada , Yoshihiro Nakata , Koji Nozaki
发明人： Tadahiro Imada , Yoshihiro Nakata , Koji Nozaki
IPC分类号： C03C15/00
CPC分类号： H01L21/67086 , H01L21/31111 , H01L21/31133 , H01L21/3143 , H01L21/31612 , H01L21/31633 , H01L21/6708 , H01L21/76802 , H01L21/76807 , H01L21/76825
摘要： A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution.
摘要翻译：一种湿式蚀刻方法，其包括在基板上形成绝缘膜，并且在使用蚀刻溶液湿式蚀刻绝缘膜期间，将绝缘膜照射激光。

5. 发明授权

US08334091B2 Resist pattern swelling material, and method for patterning using same 有权
标题翻译：抗蚀剂图案膨胀材料，以及使用其形成图案的方法
公开(公告)号：US08334091B2
公开(公告)日：2012-12-18
申请号：US12213820
申请日：2008-06-25
申请人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/00
CPC分类号： H01L27/11526 , G03F7/0048 , G03F7/095 , G03F7/40 , H01L21/31138 , H01L27/105 , H01L27/11543
摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.
摘要翻译：为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

6. 发明授权

US08303014B2 Pick-up style utility vehicle with expandable cargo bed 有权
标题翻译：带可扩张式货物的起重式多功能车
公开(公告)号：US08303014B2
公开(公告)日：2012-11-06
申请号：US12649814
申请日：2009-12-30
申请人： Yoshihiko Orihashi , Yohei Sasaki , Naohisa Masuda , Yoshihiro Watanabe , Hirokazu Morita , Koji Nozaki , Masahiro Kawahara , Masashi Sakata , Takafumi Hisamori
发明人： Yoshihiko Orihashi , Yohei Sasaki , Naohisa Masuda , Yoshihiro Watanabe , Hirokazu Morita , Koji Nozaki , Masahiro Kawahara , Masashi Sakata , Takafumi Hisamori
IPC分类号： B62D33/08 , B60N2/02 , B60R99/00
CPC分类号： B62D33/08 , B60N2/3018 , B60N2/3022 , B60N2/3027 , B60N2/3031 , B60N2/305 , B60N2/3056 , B60N2/3065 , B60N2/3093 , B60N2/36 , B60N2002/363 , B60P3/423 , B60R5/042 , B62D23/005
摘要： A pick-up style utility vehicle having a front seat, a rear seat, a cargo bed, a cabin frame surrounding a riding space, and a screen shield partitioning the cargo bed and a rear riding space in front of the cargo bed. The cargo bed can be changed between an expanded state in which the cargo bed is expanded in a front direction into the rear riding space and a non-expanded state not occupying the rear riding space. A backrest for the rear seat is attached to the screen shield. The screen shield can be shifted between a position in the expanded state and a position in the non-expanded state when a seat bottom and the backrest of the rear seat are changed between a retracted state in which the seat bottom and the backrest are erected on the same straight line and a seatable used state.
摘要翻译：一种具有前座椅，后座椅，货物床，围绕骑乘空间的舱架框架以及分隔货舱的屏蔽罩和在货物床前方的后乘坐空间的拾取式多用途车。货舱可以在货舱在前方向扩展到后乘坐空间的扩张状态和不占据后乘坐空间的非扩张状态之间改变。后排座椅的靠背安装在屏风罩上。当座椅底部和后座椅的靠背在座椅底部和靠背竖起的缩回状态之间改变时，屏幕屏障可以在展开状态的位置和非展开状态的位置之间移动相同的直线和可使用状态。

7. 发明授权

US08198009B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same 有权
标题翻译：抗蚀剂图案增厚材料和用于形成抗蚀剂图案的工艺，半导体器件及其制造方法
公开(公告)号：US08198009B2
公开(公告)日：2012-06-12
申请号：US12856001
申请日：2010-08-13
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
IPC分类号： G03F7/004 , G03F7/032
CPC分类号： G03F7/40 , Y10S430/106 , Y10S430/128
摘要： The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.
摘要翻译：本发明的目的是提供一种形成能够利用准分子激光束的抗蚀剂图案的方法，抗蚀剂图案的增稠水平可以均匀，均匀且可控地被控制，而不会受到温度等环境变化的影响并且可以形成具有超过可用照射源的暴露限度或分辨率极限的细度的抗蚀剂的空间图案。半导体器件的制造方法的特征在于，在工件的表面上形成抗蚀剂图案，在抗蚀剂图案上涂布抗蚀剂图案增厚材料，使抗蚀剂图案变厚，形成增厚的抗蚀剂图案，并通过使用增厚的抗蚀剂图案作为掩模进行蚀刻，其中抗蚀剂图案增厚材料包含树脂，并且在涂覆或涂布在抗蚀剂图案上时，其pH值高于7且不超过14。

8. 发明申请

US20120100488A1 RESIST PATTERN IMPROVING MATERIAL, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：电阻型图案改善材料，形成电阻图案的方法和生产半导体器件的方法
公开(公告)号：US20120100488A1
公开(公告)日：2012-04-26
申请号：US13180784
申请日：2011-07-12
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03F7/38 , C08K5/053 , C09D7/12
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/31144 , H01L21/32139 , H01L21/76802
摘要： To provide a resist matter improving material containing C4-11 linear alkanediol, and water.
摘要翻译：提供含有C4-11直链烷二醇和水的抗蚀剂改良材料。

9. 发明申请

US20110101508A1 RESIST PATTERN THICKENING MATERIAL, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREOF 有权
标题翻译：电阻图案加厚材料，半导体器件及其制造方法
公开(公告)号：US20110101508A1
公开(公告)日：2011-05-05
申请号：US12713876
申请日：2010-02-26
申请人： Miwa KOZAWA , Koji Nozaki
发明人： Miwa KOZAWA , Koji Nozaki
IPC分类号： H01L29/02 , C08L5/00 , H01L21/311
CPC分类号： H01L21/0273 , C08L5/16 , C08L29/04 , C09D105/16 , C09D129/04 , G03F7/40 , H01L21/31144 , H01L21/76816 , C08L31/04 , C08L39/06
摘要： A resist pattern thickening material containing a resin, a cyclic compound expressed by the general formula 1, at least one of compounds expressed by the general formulae 2 to 3, respectively, and water:
摘要翻译：含有树脂的抗蚀剂图案增稠材料，由通式1表示的环状化合物，分别由通式2〜3表示的化合物和水中的至少一种：

10. 发明申请

US20110076620A1 DITHIANE DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION 有权
标题翻译： DITHIANE衍生物，聚合物，电阻组合物和使用这种组合物制造半导体器件的方法
公开(公告)号：US20110076620A1
公开(公告)日：2011-03-31
申请号：US12955462
申请日：2010-11-29
申请人： Koji Nozaki
发明人： Koji Nozaki
IPC分类号： G03F7/004 , C08F28/06 , G03F7/20 , C07D339/08
CPC分类号： C07D339/08 , C08F220/18 , C08F220/38 , G03F7/0397 , G03F7/2041
摘要： To provide a dithiane derivative, having a structure expressed by the following general formula 1: where R1 is —H, or —CH3, a polymer containing a monomer unit containing the dithiane derivative, a resist composition containing the polymer, and a method for manufacturing a semiconductor device using the resist composition.
摘要翻译：为了提供具有由以下通式1表示的结构的二噻烷衍生物，其中R 1是-H或-CH 3，含有含有二噻烷衍生物的单体单元的聚合物，含有聚合物的抗蚀剂组合物和制造方法使用该抗蚀剂组合物的半导体器件。

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