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1. 发明申请

US20190013328A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20190013328A1
公开(公告)日：2019-01-10
申请号：US15871059
申请日：2018-01-14
申请人： Sung Gil KIM , Seul Ye KIM , Hong Suk KIM , Jin Tae NOH , Ji Hoon CHOI , Jae Young AHN
发明人： Sung Gil KIM , Seul Ye KIM , Hong Suk KIM , Jin Tae NOH , Ji Hoon CHOI , Jae Young AHN
IPC分类号： H01L27/11582 , H01L23/532 , H01L27/108 , H01L29/06 , H01L25/065 , H01L23/00
CPC分类号： H01L27/11582 , H01L23/53295 , H01L24/29 , H01L25/065 , H01L27/10885 , H01L27/10888 , H01L27/11565 , H01L29/0649
摘要： A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.

2. 发明申请

US20180108672A1 SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER 审中-公开
公开(公告)号：US20180108672A1
公开(公告)日：2018-04-19
申请号：US15484339
申请日：2017-04-11
申请人： Ji Hoon CHOI , Sung Gil KIM , Seulye KIM , Jung Ho KIM , Hong Suk KIM , Phil Ouk NAM , Jae Young AHN , Han Jin LIM
发明人： Ji Hoon CHOI , Sung Gil KIM , Seulye KIM , Jung Ho KIM , Hong Suk KIM , Phil Ouk NAM , Jae Young AHN , Han Jin LIM
IPC分类号： H01L27/11582 , H01L23/528 , H01L27/11565
CPC分类号： H01L27/11582 , H01L23/5283 , H01L27/11565
摘要： A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

3. 外观设计

USD810220S1 Swing sport wrist training aid 有权
公开(公告)号：USD810220S1
公开(公告)日：2018-02-13
申请号：US29588974
申请日：2016-12-27
申请人： Andrew Young Ahn , Harry Kyuhoon Ahn
设计人： Andrew Young Ahn , Harry Kyuhoon Ahn

4. 发明申请

US20180040628A1 VERTICAL-TYPE MEMORY DEVICE 有权
公开(公告)号：US20180040628A1
公开(公告)日：2018-02-08
申请号：US15462933
申请日：2017-03-20
申请人： Phil-ouk Nam , Sung-gil KIM , Ji-hoon CHOI , SeuI-ye KIM , Jae-young AHN , Hong-suk KIM
发明人： Phil-ouk Nam , Sung-gil KIM , Ji-hoon CHOI , SeuI-ye KIM , Jae-young AHN , Hong-suk KIM
IPC分类号： H01L27/11582 , H01L29/78 , H01L27/11556
CPC分类号： H01L27/11582 , H01L27/11556 , H01L27/1157 , H01L29/7827
摘要： A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on the substrate, the ground selection transistor including a first gate insulation portion and a first replacement gate electrode, an etch control layer on the first replacement gate electrode, and a memory cell on the etch control layer, the memory cell including a second gate insulation portion and a second replacement gate electrode. The etch control layer may include a polysilicon layer doped with carbon, N-type impurities, or P-type impurities, or may include a polysilicon oxide layer comprising carbon, N-type impurities, or P-type impurities. A thickness of the first replacement gate electrode may be the same as a thickness of the second replacement gate electrode, or the first replacement gate electrode may be thicker than the second.

5. 发明授权

US09747391B2 Method and device for designing a current supply and collection device for a transportation system using an electric vehicle 有权
公开(公告)号：US09747391B2
公开(公告)日：2017-08-29
申请号：US13810066
申请日：2011-02-09
申请人： Nam Pyo Suh , Dong Ho Cho , Chun Taek Rim , Seong Jeub Jeon , Jung-Ho Kim , Seung-Young Ahn
发明人： Nam Pyo Suh , Dong Ho Cho , Chun Taek Rim , Seong Jeub Jeon , Jung-Ho Kim , Seung-Young Ahn
IPC分类号： G06G7/48 , G06F17/50 , B60L5/00 , B60L11/18 , H02J5/00 , B60M7/00
CPC分类号： G06F17/50 , B60L5/005 , B60L11/182 , B60L2200/26 , B60L2250/16 , B60L2270/147 , B60M7/003 , H02J5/005 , H02J7/025 , H02J50/12 , H02J50/40 , H02J50/70 , Y02T10/7005 , Y02T10/7072 , Y02T90/122 , Y02T90/14
摘要： Provided is a method for designing a current supply device for wirelessly supplying power to a vehicle having a current collection device. In the design method, the gap between the two adjacent magnetic poles of the current supply device is received as input and then the gap between the current supply device and the current collection device is determined based on the gap between the two magnetic poles. Next, the magnitude of the power to be supplied to the current supply device is determined based on the value required with respect to the magnitude of the magnetic field and the gap between the current supply device and the current collection device. According to the design method, current supply device can easily be designed since various functional requirements are decoupled from each other.

6. 发明授权

US09258808B2 Methods for transmitting and receiving of control channel in wireless communication systems 有权
公开(公告)号：US09258808B2
公开(公告)日：2016-02-09
申请号：US13529310
申请日：2012-06-21
申请人： Tae Gyun Noh , Young Jo Ko , Bang Won Seo , Jae Young Ahn
发明人： Tae Gyun Noh , Young Jo Ko , Bang Won Seo , Jae Young Ahn
IPC分类号： H04W72/04 , H04W4/20 , H04L5/00
摘要： A method of transmitting and receiving a control channel in a wireless communication system is provided. A base station allocates a data channel to a radio resource, adds start position information of the data channel into a payload of a control channel, and performs signaling for indication information on the start position information added into the payload of the control channel to a terminal. Accordingly, the legacy system and the enhanced system can efficiently transmit a control channel.

7. 发明授权

US09240357B2 Method of fabricating semiconductor device having preliminary stacked structure with offset oxide etched using gas cluster ion 有权
标题翻译：制造半导体器件的方法，该半导体器件具有使用气体簇离子蚀刻的具有偏移氧化物的初步堆叠
公开(公告)号：US09240357B2
公开(公告)日：2016-01-19
申请号：US14100651
申请日：2013-12-09
申请人： Tae-Gon Kim , Jong-Hoon Kang , Jae-Young Ahn , Jun-Kyu Yang , Han-Mei Choi , Ki-Hyun Hwang
发明人： Tae-Gon Kim , Jong-Hoon Kang , Jae-Young Ahn , Jun-Kyu Yang , Han-Mei Choi , Ki-Hyun Hwang
IPC分类号： H01L21/66 , H01L21/265 , H01L21/311 , H01L27/115
CPC分类号： H01L22/12 , H01L21/31116 , H01L22/20 , H01L27/11582 , H01L2924/0002 , H01L2924/00
摘要： According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact pattern in the through hole; forming an offset oxide on the preliminary stack structure; measuring thickness data of the offset oxide; and scanning the offset oxide using a reactive gas cluster ion beam. The scanning the offset oxide includes setting a scan speed based on the measured thickness data of the offset oxide, and forming a gas cluster.
摘要翻译：根据本发明构思的示例性实施例，制造半导体器件的方法包括：形成初步叠层结构，所述预备叠层结构限定通孔; 在通孔中形成保护层和电介质层; 在通孔中形成通道图案，间隙填充图案和接触图案; 在预备堆叠结构上形成偏移氧化物; 测量偏移氧化物的厚度数据; 并使用反应性气体簇离子束扫描偏移氧化物。扫描偏移氧化物包括基于测量的偏移氧化物的厚度数据设置扫描速度，并形成气体簇。

8. 发明申请

US20150260196A1 FLY WHEEL 审中-公开
标题翻译：飞轮
公开(公告)号：US20150260196A1
公开(公告)日：2015-09-17
申请号：US14423250
申请日：2013-07-03
申请人： Sang Tae AHN , Chun Young AHN
发明人： Sang Tae Ahn , Chun Young Ahn
IPC分类号： F04D29/26 , F16F15/30
CPC分类号： F04D29/26 , B60Y2400/162 , F01D1/32 , F03G3/08 , F16F15/30 , F16F2226/00
摘要： Provided is a fly wheel, including: a fly wheel body provided with a receiving part in which air is filled and mounted on driving shaft; a blade radially coupled to the fly wheel body, including a ventilation passage formed therein to be communicated with the receiving part and a puncturing part formed on an outer race thereof to be communicated with the ventilation passage, and generating thrust by discharging the air filled in the receiving part to the puncturing part at the time of rotating the driving shaft; and a check valve installed on the fly wheel body and being opened and closed by a pressure difference between the receiving part and the outside.
摘要翻译：本发明提供一种飞轮，包括：飞轮主体，其设置有容纳部，空气被填充并安装在驱动轴上; 径向耦合到所述飞轮主体的叶片，包括形成在其中的通风通道，以与所述接收部分连通，以及形成在其外圈上的穿刺部分，以与所述通风通道连通，并且通过排出填充的空气产生推力所述接收部在旋转所述驱动轴时到达所述穿刺部; 以及安装在飞轮体上并通过接收部和外部之间的压力差打开和关闭的止回阀。

9. 发明授权

US09096739B2 Cellulose acetate film 有权
标题翻译：乙酸纤维素膜
公开(公告)号：US09096739B2
公开(公告)日：2015-08-04
申请号：US13820328
申请日：2011-08-29
申请人： Myoung Lae Kim , Jee Young Ahn , Hyuk Jun Kim , Ki Yup Kim , Sung Ho Son , Yong Gyun Cho , Won Yeob Kim , Jun Tae Choi
发明人： Myoung Lae Kim , Jee Young Ahn , Hyuk Jun Kim , Ki Yup Kim , Sung Ho Son , Yong Gyun Cho , Won Yeob Kim , Jun Tae Choi
IPC分类号： C08G18/38 , C08L1/14 , C08K5/33 , C08J5/18 , C08K5/45 , C08L1/12 , G02B1/04 , G02B5/30
CPC分类号： C08K5/33 , C08J5/18 , C08J2301/12 , C08K5/45 , G02B1/04 , G02B5/3083 , C08L1/12
摘要： Provided is a cellulose acetate film used for optical compensation and, in particular, a cellulose acetate film having a low retardation value Rth in the film thickness direction.
摘要翻译：本发明提供用于光学补偿的醋酸纤维素膜，特别是膜厚度方向上具有低延迟值Rth的醋酸纤维素膜。

10. 发明申请

US20150206900A1 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：垂直存储器件及其制造方法
公开(公告)号：US20150206900A1
公开(公告)日：2015-07-23
申请号：US14601496
申请日：2015-01-21
申请人： Phil-Ouk NAM , Dong-Chul YOO , Bi-O KIM , Jae-Young AHN , Byong-Hyun JANG , Ki-Hyun HWANG
发明人： Phil-Ouk NAM , Dong-Chul YOO , Bi-O KIM , Jae-Young AHN , Byong-Hyun JANG , Ki-Hyun HWANG
IPC分类号： H01L27/115
CPC分类号： H01L27/11582 , H01L27/0207 , H01L27/11565 , H01L27/1157
摘要： A vertical memory device including a substrate including first regions and a second region; a plurality of channels in the first regions, the plurality of channels extending in a first direction substantially perpendicular to a top surface of the substrate; a charge storage structure on a sidewall of each channel in a second direction substantially parallel to the top surface of the substrate; a plurality of gate electrodes in the first regions, the plurality of gate electrodes arranged on a sidewall of the charge storage structure and spaced apart from each other in the first direction; and a plurality of supporters in the second region, the plurality of supporters spaced apart from each other in a third direction substantially perpendicular to the first direction and the second direction, the plurality of supporters contacting a sidewall of at least one gate electrode.
摘要翻译：一种垂直存储器件，包括：包括第一区域和第二区域的衬底; 所述第一区域中的多个通道，所述多个通道在基本上垂直于所述基板的顶表面的第一方向上延伸; 每个通道的侧壁上的电荷存储结构，其基本上平行于所述基板的顶表面; 所述第一区域中的多个栅极电极，所述多个栅电极设置在所述电荷存储结构的侧壁上，并且在所述第一方向上彼此间隔开; 以及在所述第二区域中的多个支撑件，所述多个支撑件在基本上垂直于所述第一方向和所述第二方向的第三方向上彼此间隔开，所述多个支撑件接触至少一个栅电极的侧壁。

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