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1. 发明授权

US10137929B2 Electric power steering device for vehicle 有权
公开(公告)号：US10137929B2
公开(公告)日：2018-11-27
申请号：US14650706
申请日：2013-01-24
申请人： Kenichiro Aoki , Kenji Shibata , Takayoshi Tsujimoto
发明人： Kenichiro Aoki , Kenji Shibata , Takayoshi Tsujimoto
IPC分类号： B62D5/30 , B62D5/04
摘要： An electric power steering device for a vehicle includes a plurality of assist systems electromagnetically driving an electric motor. When a first or second assist system malfunctions, a malfunction state assist amount calculation part calculates an assist amount while decreasing a limit value at the vehicle stopping, to an amount smaller than a limit value at the vehicle moving. When a malfunction such as a disconnection or a fixing of the switching elements occurs in the first or second assist systems on the basis of a judgment result of a malfunction judgment function, an assist amount switching part supplies an assist amount received from the malfunction state assist amount calculation part to first and second motor drive control parts. When a malfunction occurs in one of the first and second assist systems, one of the first and second motor drive control parts drives the motor by using the assist amount.

2. 发明授权

US09231185B2 Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device 有权
标题翻译：制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法
公开(公告)号：US09231185B2
公开(公告)日：2016-01-05
申请号：US13137202
申请日：2011-07-27
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01B13/00 , H01L41/08 , H05K3/10 , H01L21/67 , H01L41/187 , H01L41/332 , H01L41/314 , H01L41/316 , H01L41/318
CPC分类号： H01L41/0805 , H01L21/67069 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , H05K3/108 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序，含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。

3. 发明授权

US08446074B2 Piezoelectric thin-film element and piezoelectric thin-film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08446074B2
公开(公告)日：2013-05-21
申请号：US13636883
申请日：2011-03-24
申请人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
发明人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
IPC分类号： H01L41/187
CPC分类号： C23C14/025 , C23C14/088 , C23C14/35 , H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要翻译：提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下，或压电薄膜3的氢浓度为4×1019 / cm3以下。

4. 发明申请

US20130015392A1 PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME, PIEZOELECTRIC FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND PIEZOELECTRIC FILM DEVICE 有权
标题翻译：压电薄膜及其制造方法，压电薄膜元件及其制造方法和压电薄膜器件
公开(公告)号：US20130015392A1
公开(公告)日：2013-01-17
申请号：US13532081
申请日：2012-06-25
申请人： Kazufumi SUENAGA , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
发明人： Kazufumi SUENAGA , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
IPC分类号： H01L41/187 , H01L41/047 , H01L41/22 , H01L41/04
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
摘要翻译：提供了一种由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的碱铌酸盐类钙钛矿结构的压电膜，其中铌酸锂具有假立方晶体，四方晶体，正交晶体，单斜晶体，菱方晶体的晶体结构，或者具有共晶的晶体结构，并且当总共K-O键合并且在铌酸碱钾的K原子附近的结合状态下将K金属键合设定为100％，K-O键合比为46.5％以上，K-金属键合比为53.5％以下，其中，金属表示包含在压电膜中的金属原子。

5. 发明申请

US20120056508A1 Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device 有权
标题翻译：压电薄膜晶片的制造方法，压电薄膜元件和压电薄膜元件
公开(公告)号：US20120056508A1
公开(公告)日：2012-03-08
申请号：US13137689
申请日：2011-09-02
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047 , H01L41/22 , B32B3/00 , H01L41/113 , H01L41/09
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，对形成在基板上的压电薄膜进行干蚀刻的蚀刻工序;以及通过检测所述干蚀刻发射离子等离子体中Na的发射峰强度为压电薄膜。压电膜由组成式（K1-xNax）NbO3（0.4＆amp; NlE; x＆amp; NlE; 0.7）表示的基于铌酸盐的钙钛矿结构制成。

6. 发明授权

US08122204B2 Shadow write and transfer schemes for memory devices 有权
标题翻译：存储设备的影子写入和传输方案
公开(公告)号：US08122204B2
公开(公告)日：2012-02-21
申请号：US12137443
申请日：2008-06-11
申请人： Mitsuhiro Nagao , Kenji Shibata , Satoru Kawmoto
发明人： Mitsuhiro Nagao , Kenji Shibata , Satoru Kawmoto
IPC分类号： G06F13/00 , G06F13/28 , G06F1/00 , G06F3/00 , G11C7/10 , G11C7/00
CPC分类号： G06F13/1694 , G06F11/1666 , G11C7/1045 , G11C7/1072 , G11C11/406 , G11C11/40622 , G11C11/4096 , Y02D10/14
摘要： Systems and methods for controlling memory devices are disclosed. In one embodiment, a memory system comprises a memory controller for forwarding a command signal and an address signal and for receiving and forwarding a data signal, and a first memory device for receiving the command signal and the address signal from the memory controller, where the first memory device comprises a first command judging circuit for receiving and forwarding the data signal and for decoding the command signal. The memory system further comprises a second memory device for receiving the command signal and the address signal from the memory controller, where the second memory device comprises a second command judging circuit for receiving and generating the data signal and for decoding the command signal. The command signal, the address signal and the data signal are commonly connected to the first memory device and the second memory device.
摘要翻译：公开了用于控制存储器件的系统和方法。在一个实施例中，存储器系统包括用于转发命令信号和地址信号并用于接收和转发数据信号的存储器控制器，以及用于从存储器控制器接收命令信号和地址信号的第一存储器件，其中第一存储装置包括用于接收和转发数据信号并用于对命令信号进行解码的第一命令判断电路。存储器系统还包括用于从存储器控制器接收命令信号和地址信号的第二存储器件，其中第二存储器件包括用于接收和产生数据信号并用于解码命令信号的第二命令判断电路。命令信号，地址信号和数据信号共同连接到第一存储器件和第二存储器件。

7. 发明授权

US08035281B2 Physical quantity detecting sensor and actuator 有权
标题翻译：物理量检测传感器和执行器
公开(公告)号：US08035281B2
公开(公告)日：2011-10-11
申请号：US12963222
申请日：2010-12-08
申请人： Kenji Shibata , Fumihito Oka
发明人： Kenji Shibata , Fumihito Oka
IPC分类号： H01L41/187
CPC分类号： H01L41/1873 , H01L41/0815 , H01L41/094
摘要： A sensor for detecting a physical quantity includes a piezoelectric thin film device having a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要翻译：用于检测物理量的传感器包括具有下电极，压电薄膜和上电极的压电薄膜器件，以及连接在压电薄膜器件的下电极和上电极之间的电压检测器件。压电薄膜由（K1-xNax）NbO3（0

8. 发明申请

US20110173379A1 SEMICONDUCTOR DEVICE WITH DOUBLE PROGRAM PROHIBITION CONTROL 有权
标题翻译：具有双程序禁止控制的半导体器件
公开(公告)号：US20110173379A1
公开(公告)日：2011-07-14
申请号：US13052486
申请日：2011-03-21
申请人： Kenji SHIBATA , Masahiko OKURA , Mitsuhiro NAGAO
发明人： Kenji SHIBATA , Masahiko OKURA , Mitsuhiro NAGAO
IPC分类号： G06F12/00
CPC分类号： G11C16/22
摘要： The present invention provides a semiconductor device and a method for controlling the semiconductor device, the semiconductor device including memory regions; program prohibition information units storing program prohibition information to be used for determining whether to prohibit or allow programming in the memory regions corresponding to the program prohibition information units; a first prohibition information control circuit that prohibits a change of the program prohibition information from a program prohibiting state with respect to a memory region based on first prohibition information; and a second prohibition information control circuit that prohibits a change of the program prohibition information from a program allowing state to a program prohibiting state with respect to the corresponding memory region based on second prohibition information with respect to the corresponding memory region.
摘要翻译：本发明提供半导体器件和控制半导体器件的方法，该半导体器件包括存储区域; 程序禁止信息单元存储用于确定是否禁止或允许对应于程序禁止信息单元的存储器区域中的编程的程序禁止信息; 第一禁止信息控制电路，基于第一禁止信息禁止程序禁止信息相对于存储区域的程序禁止状态的改变; 以及第二禁止信息控制电路，其基于相对于存储区域的第二禁止信息，禁止将程序禁止信息从允许状态改变为相对于存储区域的程序禁止状态的程序。

9. 发明申请

US20110121690A1 PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20110121690A1
公开(公告)日：2011-05-26
申请号：US12948083
申请日：2010-11-17
申请人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji SHIBATA , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/18 , H01L41/047
CPC分类号： H01L41/316 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/656 , C04B2235/762 , C04B2235/768 , C04B2235/787 , H01L41/0477 , H01L41/094 , H01L41/1873 , H01L41/29
摘要： To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
摘要翻译：本发明提供一种压电薄膜元件，其特征在于，具有：基板上具有由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜，其中，压电薄膜的组成比x，y 由（K1-xNax）yNbO3表示，在0.4≤n1E的范围内，x＆lt; l1; 0.7和0.7＆lt; nEE; y＆nlE; 0.94。

10. 发明授权

US07902730B2 Piezoelectric thin film device 有权
标题翻译：压电薄膜器件
公开(公告)号：US07902730B2
公开(公告)日：2011-03-08
申请号：US12771173
申请日：2010-04-30
申请人： Kenji Shibata , Fumihito Oka
发明人： Kenji Shibata , Fumihito Oka
IPC分类号： H01L41/083
CPC分类号： G01C19/5663 , H01L41/0815 , H01L41/094 , H01L41/1136 , H01L41/1873 , H01L41/29 , H01L41/316 , H01L41/319
摘要： A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要翻译：传感器或致动器包括压电薄膜器件，其包括下电极，压电薄膜和上电极，以及连接在压电薄膜器件的下电极和上电极之间的电压检测器件。压电薄膜由（K1-xNax）NbO3（0

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