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1. 发明授权

US5789760A Multiquantum barrier Schottky junction device 失效
标题翻译：多量子屏障肖特基接头装置
公开(公告)号：US5789760A
公开(公告)日：1998-08-04
申请号：US422831
申请日：1995-04-17
申请人： Michinori Irikawa , Kenichi Iga
发明人： Michinori Irikawa , Kenichi Iga
IPC分类号： H01L29/15 , H01L29/47 , H01L29/06 , H01L31/0328
CPC分类号： H01L29/155 , H01L29/475 , Y10S977/761
摘要： There is provided a semiconductor device comprising a Schottky junction having a very low leakage current and a high forward voltage. The device comprises a Schottky junction realized by a semiconductor 4 and a metal 6 and a multiquantum barrier structure 5 disposed on the interface of said semiconductor 4 and said metal 6 and having an effect of reflecting incident carriers as waves �in phase conditions capable of allowing mutual enhancement of the incident and reflected waves!.
摘要翻译：提供了包括具有非常低的漏电流和高正向电压的肖特基结的半导体器件。该器件包括由半导体4和金属6以及设置在所述半导体4和所述金属6的界面上的多量子势垒结构5实现的肖特基结，并且具有将入射载流子作为波[反相条件能够允许事件的相互增强和反映的波浪]。

2. 发明授权

US06449300B1 Surface-emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US06449300B1
公开(公告)日：2002-09-10
申请号：US09517182
申请日：2000-03-02
申请人： Kenichi Iga , Nobuhiko Nishiyama , Fumio Koyama
发明人： Kenichi Iga , Nobuhiko Nishiyama , Fumio Koyama
IPC分类号： H01S500
CPC分类号： H01S5/18333 , H01S5/0207 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18369
摘要： A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively, one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector, the other constituting a second conductive type Bragg reflector.
摘要翻译：一种表面发射激光器，其中由由两种薄膜构成的交替层叠结构的第一分布式布拉格反射器，由两种薄膜制成的交替层叠结构的有源层和第二分布式布拉格反射器组成，形成在半导体基板上，依次包括在第一和第二分布式布拉格反射器和有源层中的至少一个之间的远程接合表面中具有氧化区域的电流狭缝层和多个电容减小层，每个层在构成当前狭窄层的远程接合面中具有比氧化区域更小的氧化面积，第一和第二分布布拉格反射器，多个电容减小层，电流狭窄层和有源层中的至少一个被布置第一和第二分布布拉格反射器中的一个构成第一导电类型的布拉格反射器反射器，另一个构成第二导电型布拉格反射器。

3. 发明授权

US5236864A Method of manufacturing a surface-emitting type semiconductor laser device 失效
标题翻译：制造表面发射型半导体激光器件的方法
公开(公告)号：US5236864A
公开(公告)日：1993-08-17
申请号：US883923
申请日：1992-05-12
申请人： Kenichi Iga , Akira Ibaraki , Kenji Kawashima , Kotaro Furusawa , Toru Ishikawa
发明人： Kenichi Iga , Akira Ibaraki , Kenji Kawashima , Kotaro Furusawa , Toru Ishikawa
IPC分类号： H01S5/183 , H01S5/227 , H01S5/323
CPC分类号： H01S5/18308 , H01S5/0207 , H01S5/18305 , H01S5/18341 , H01S5/18369 , H01S5/2222 , H01S5/32308 , Y10S148/095 , Y10S438/955
摘要： A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.
摘要翻译：一种具有掩埋结构的表面发射型半导体激光器件的制造方法。在形成GaAlAs / GaAs系统掩埋部分周围的GaAlAs / GaAs体系中，GaAlAs膜用作掩模层。掩模层可以通过用于形成掩埋部分的晶体生长装置构成掩埋部分的有源层，包覆层等连续地形成。当系统被蚀刻时，GaAlAs膜掩模防止系统掩埋部分变成底切，使得掩模在后续处理中具有更好的耐剥离性。

4. 发明授权

US4340966A Semiconductor laser with buffer layer 失效
标题翻译：具有缓冲层的半导体激光器
公开(公告)号：US4340966A
公开(公告)日：1982-07-20
申请号：US122171
申请日：1980-02-19
申请人： Shigeyuki Akiba , Yasuharu Suematsu , Shigehisa Arai , Masanobu Kodaira , Yoshio Itaya , Kenichi Iga , Chuichi Ota , Takaya Yamamoto , Kazuo Sakai
发明人： Shigeyuki Akiba , Yasuharu Suematsu , Shigehisa Arai , Masanobu Kodaira , Yoshio Itaya , Kenichi Iga , Chuichi Ota , Takaya Yamamoto , Kazuo Sakai
IPC分类号： H01L21/208 , H01L33/12 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/323 , H01S3/19
CPC分类号： H01S5/3235 , H01S5/32391
摘要： A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.
摘要翻译：在InP衬底上形成的具有包含多个In1-xGax'AsyP1-y（0.42y≤x≤0.5y，0≤y≤1）的异质结构的半导体激光器，它们是与InP晶格匹配，其中包含在层中并且具有大于0.6eV但小于0.9eV的禁带宽的发光层在InP衬底上夹在两个InP层之间，其中存在设置在发光层和在其上生长的至少一个具有比发光层的禁带宽度大的禁带宽度的缓冲层，但小于InP的禁带宽度的InP层。缓冲层在室温下的禁带宽度可能大于0.8eV但小于1.0eV。

5. 发明授权

US5289486A Semiconductor luminous element and superlattice structure 失效
标题翻译：半导体发光元件和超晶格结构
公开(公告)号：US5289486A
公开(公告)日：1994-02-22
申请号：US55799
申请日：1993-04-29
申请人： Kenichi Iga , Fumio Koyama , Takeshi Takagi
发明人： Kenichi Iga , Fumio Koyama , Takeshi Takagi
IPC分类号： H01L33/06 , H01S5/20 , H01S5/343 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/34326 , H01S5/2013 , Y10S977/761
摘要： A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer.
摘要翻译：半导体发光元件在其有源层的两侧具有覆层; 并且其具有与至少一个包覆层的至少一部分上的有源层接触的多量子势垒层。该多量子势垒层由超晶格势垒层和超晶格阱层的交替叠层形成。阱层的能隙小于活性层的能隙，多量子势垒层的量子化能隙大于有源层的能隙。限制电子和空穴的半导体器件的超晶格结构由有源层形成，并且在该有源层的至少一个侧面上形成包覆层。多量子势垒层与包层的至少一部分上的有源层接触。该多量子势垒层由超晶格势垒层和超晶格阱层的交替叠层形成。阱层的能隙小于活性层的能隙，多量子势垒层的量子化能隙大于有源层的能隙。

6. 发明授权

US5241554A Laser diode of variable beam divergence and information processor using the same 失效
标题翻译：可变光束的激光二极管和使用它的信息处理器
公开(公告)号：US5241554A
公开(公告)日：1993-08-31
申请号：US747189
申请日：1991-08-19
申请人： Kenichi Iga , Kazuto Senda
发明人： Kenichi Iga , Kazuto Senda
IPC分类号： G02B26/10 , B41J2/44 , G03G15/04 , G11B7/125 , H01S3/00 , H01S5/00 , H01S5/062 , H01S5/223
CPC分类号： H01S3/005 , G11B7/125 , H01S5/06203 , H01S5/005 , H01S5/06236 , H01S5/0624 , H01S5/06243 , H01S5/2231
摘要： The present invention relates to a laser diode and a highly precise light information processor using the same, particularly a laser diode which controls the diameter of a current flowing through an active layer and changes the emitting area of the active layer, a laser printer which is suited to half tone expression with high image quality by using the above semiconductor laser device, and an optical disk device which can record data surely.

7. 发明授权

US5020066A Surface-emitting-type semiconductor laser device 失效
标题翻译：表面发射型半导体激光器件
公开(公告)号：US5020066A
公开(公告)日：1991-05-28
申请号：US457256
申请日：1989-12-27
申请人： Kenichi Iga , Akira Ibaraki , Kenji Kawashima , Kotaro Furusawa , Toru Ishikawa
发明人： Kenichi Iga , Akira Ibaraki , Kenji Kawashima , Kotaro Furusawa , Toru Ishikawa
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183
CPC分类号： H01S5/18308 , H01S5/0207 , H01S5/02461 , H01S5/18305 , H01S5/18361 , H01S5/18369 , H01S5/2222
摘要： A surface-emitting-type semiconductor laser device having a buried structure wherein a burying part having a current blocking function is formed around a buried part comprising an active region. A reflecting mirror consisting of a semiconductor multilayer film is installed on the buried part and the burying part, and the Bragg wavelength of this semiconductor multilayer film is set in matching with a longitudinal mode one mode higher than the longitudinal mode of oscillation in pulse operation. This semiconductor multilayer film has a configuration wherein two kinds of GaAlAs layers having different composition ratios of Al are laminated alternately, and the layer thickness of each GaAlAS layer constituting the semiconductor multilayer film is set so as to able to realize the Bragg wavelength calculated theoretically.
摘要翻译：具有掩埋结构的表面发射型半导体激光器件，其中具有电流阻挡功能的掩埋部分形成在包括有源区的掩埋部分周围。由半导体多层膜组成的反射镜安装在掩埋部分和掩埋部分上，并且该半导体多层膜的布拉格波长被设定为与在脉冲操作中的纵向振荡模式相比更高的纵向模式匹配。该半导体多层膜具有交替层叠具有不同组成比Al的两种GaAlAs层的构造，并且将构成半导体多层膜的各GaAlAS层的层厚度设定为能够实现理论上计算的布拉格波长。

8. 发明授权

US06764229B1 Method and apparatus for optical fiber splicing 失效
标题翻译：光纤拼接方法及装置
公开(公告)号：US06764229B1
公开(公告)日：2004-07-20
申请号：US09717733
申请日：2000-11-21
申请人： Kenichi Iga , Yoshihara Kuwabara , Kouji Yamamoto , Jun Mizuno
发明人： Kenichi Iga , Yoshihara Kuwabara , Kouji Yamamoto , Jun Mizuno
IPC分类号： G02B6255
CPC分类号： G02B6/3806 , G02B6/3805
摘要： An optical fiber splicer includes a pair of retainers for retaining optical fibers to be spliced, a block formed with a groove of V-shaped cross-section, and abutment and pressure-contact mechanism for sliding terminal portions of the optical fibers in mutually opposite directions along the groove, producing substantially equal elastic forces in the terminal portions, bringing the terminal portions into abutment, and bringing the abutted terminal portions into pressure contact. An optical fiber splicing method includes a step of sliding terminal portions of optical fibers to be spliced along a groove of V-shaped cross-section in mutually opposite directions and producing substantially equal elastic forces in the terminal portions, and a step of bringing the terminal portions into abutment and then bringing the abutted terminal portions into pressure contact. An optical fiber splice structure includes terminal portions of optical, fibers spliced in a groove of V-shaped cross-section under pressure contact and exertion of substantially equal elastic forces.
摘要翻译：一种光纤熔接机包括一对用于保持要接合的光纤的保持器，形成有V形横截面的槽的块，以及用于沿彼此相反的方向滑动光纤的端子部分的邻接和压力接触机构沿着凹槽，在端子部分中产生基本相等的弹性力，使端子部分抵接，并使抵接的端子部分压力接触。一种光纤拼接方法，其特征在于，包括：沿着相互相反方向的V字形截面的沟槽将所述光纤的端子部分滑动并在所述端子部分产生大致相等的弹性力的工序;以及使所述端子部分抵接，然后将抵接的端子部分压接。光纤接头结构包括光纤的端子部分，在压力接触下在V形横截面的沟槽中接合的纤维，并且具有基本相等的弹性力。

9. 发明授权

US5932890A Field effect transistor loaded with multiquantum barrier 失效
标题翻译：场效应晶体管负载多量子屏障
公开(公告)号：US5932890A
公开(公告)日：1999-08-03
申请号：US884319
申请日：1997-06-27
申请人： Michinori Irikawa , Kenichi Iga
发明人： Michinori Irikawa , Kenichi Iga
IPC分类号： H01L29/15 , H01L29/778 , H01L29/80 , H01L29/06
CPC分类号： H01L29/7783 , H01L29/155 , H01L29/802 , Y10S977/761 , Y10S977/938
摘要： A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier structure 4 is arranged between a gate and a channel layer 3 along a channel layer 3 and having an effect of reflecting incident overflowing carriers a s waves in with with phase conditions of total reflection allowing mutual enhancement of the incident and reflected wave in a region between a channel layer 3 and a gate electrode 10 and/or in a region opposite to the gate electrode 10 relative to the channel layer 3.
摘要翻译：提供了具有优异的转移电导和改善的栅极漏电流和击穿电压的场效应晶体管。在晶体管中，多量子势垒结构4沿着沟道层3布置在栅极和沟道层3之间，并具有反射入射溢流载流子作为波浪的效果，同时具有允许相互增强事件的全反射相位条件，在沟道层3和栅电极10之间的区域和/或与栅电极10相对的沟道层3的区域中的反射波。

10. 发明授权

US5764828A Optical apparatus for controlling angle of divergence of ring beam 失效
标题翻译：用于控制环形光束发散角的光学装置
公开(公告)号：US5764828A
公开(公告)日：1998-06-09
申请号：US727416
申请日：1996-10-18
申请人： Kenichi Iga , Shinichi Katsura , Yuzo Kawaguchi
发明人： Kenichi Iga , Shinichi Katsura , Yuzo Kawaguchi
IPC分类号： G01B11/255 , G01C15/00 , G02B27/09 , H01S3/06 , H01S3/101 , G02B6/34
CPC分类号： G01B11/255 , G01C15/004 , G02B27/09 , G02B6/0008
摘要： An optical apparatus for controlling an angle of divergence of a ring beam which is capable of irradiating a ringed light beam having a uniform distribution of light intensity with an arbitrary angle of divergence with respect to the optical axis in the direction of 360.degree. concurrently. The optical apparatus comprises parallel beam generating means (2) to which a light beam (L1) output from a light source (1) is input and which outputs the incident light (L2) by transforming it into a parallel light beam (L3); ring beam generating means (3) to which the parallel beam (L3) output from the parallel beam generating means (2) is input and which outputs the input light (L4) by transforming it into a ringed light beam (L5) whose shape is annular when irradiated to an imaginary plane perpendicular to an optical axis (A--A); and divergent angle changing means (4) for changing an angle of divergence (.theta.3) (an angle formed between the optical axis (A--A) and the direction of propagation of the ring beam (L5)).
摘要翻译： PCT No.PCT / JP96 / 01505 Sec。 371日期：1996年10月18日 102（e）日期1996年10月18日PCT PCT 1996年6月4日PCT公布。公开号WO96 / 42031 日期：1996年12月27日一种用于控制环形光束的发散角的光学装置，该光束装置能够以相对于所述光轴的任意发光角照射光强度均匀分布的环形光束， 360度同时光学装置包括平行光束产生装置（2），从光源（1）输出的光束（L1）被输入并且通过将入射光（L2）变换为平行光束（L3）而输出入射光（L2）; 输入从平行光束发生装置（2）输出的并行光束（L3）的环形光束发生装置（3），并通过将输入光（L4）变换为形状为当照射到垂直于光轴（AA）的假想平面时环形; 以及用于改变发散角（θ3）（在光轴（A-A）与环形光束（L5）的传播方向之间形成的角度）的发散角度改变装置（4）。

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