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1. 发明申请

US20120256104A1 PHASE CHANGE DEVICE HAVING PHASE CHANGE RECORDING FILM, AND PHASE CHANGE SWITCHING METHOD FOR PHASE CHANGE RECORDING FILM 有权
标题翻译：具有相变记录膜的相变装置及相变记录膜的相变切换方法
公开(公告)号：US20120256104A1
公开(公告)日：2012-10-11
申请号：US13503346
申请日：2010-08-09
申请人： Muneaki Hase , Kotaro Makino , Junji Tominaga
发明人： Muneaki Hase , Kotaro Makino , Junji Tominaga
IPC分类号： B01J19/12
CPC分类号： G11C13/0004 , G02B26/001 , G11B7/00454 , G11B7/00456 , G11B7/1395 , G11B7/243 , G11B2007/24316 , G11C13/04 , H01L45/06 , H01L45/144 , H01S3/0057
摘要： Allow the rate of phase change to be controlled at the time period of phonons (approx. 270 fs) for the purpose of achieving a substantially higher recording-erasing speed compared to what can be achieved with conventional technologies relating to optical recording media using phase change. A femtosecond pulse laser is shaped into pulse trains each having a first pulse and a second pulse using a Michelson interferometer, and the time interval of first and second pulses is matched with the time period of lattice vibration of a material constituting the phase change recording film to be irradiated, thereby inducing phase change.
摘要翻译：为了实现相对于使用相变光学记录介质的传统技术可实现的记录擦除速度，可以在声子（约270 fs）的时间段内控制相位变化率。使用迈克尔逊干涉仪将飞秒脉冲激光器形成为具有第一脉冲和第二脉冲的脉冲串，并且将第一和第二脉冲的时间间隔与构成相变记录膜的材料的晶格振动的时间段相匹配被照射，从而引起相变。

2. 发明申请

US20110315942A1 SOLID-STATE MEMORY 有权
标题翻译：固态存储器
公开(公告)号：US20110315942A1
公开(公告)日：2011-12-29
申请号：US13138545
申请日：2010-02-24
申请人： Junji Tominaga , Paul Fons , Alexander Kolobov
发明人： Junji Tominaga , Paul Fons , Alexander Kolobov
IPC分类号： H01L45/00
CPC分类号： G11C13/0004 , H01L45/065 , H01L45/1233 , H01L45/148 , H01L45/1625
摘要： A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to a phase separation. The laminated structure includes a film containing an Sb atom(s) and a film containing a Ge atom(s), which films constitute a superlattice structure. In the laminated structure, phase separation of the film containing the Sb atom and the film containing the Ge atom allows data to be recorded and erased efficiently.
摘要翻译：固态存储器在记录和擦除数据期间需要较低的电流，并可以重复地重写数据次数。在至少一个示例性实施例中，固态存储器包括记录层，其包括电性能响应于相分离而改变的叠层结构。层叠结构包括含有Sb原子的膜和含有Ge原子的膜，该膜构成超晶格结构。在层叠结构中，含有Sb原子的膜和含有锗原子的膜的相分离允许有效地记录和擦除数据。

3. 发明申请

US20110207284A1 SOLID-STATE MEMORY MANUFACTURING METHOD 有权
标题翻译：固态存储器制造方法
公开(公告)号：US20110207284A1
公开(公告)日：2011-08-25
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

4. 发明申请

US20100167015A1 ETCHING RESIST 有权
标题翻译：蚀刻抵抗力
公开(公告)号：US20100167015A1
公开(公告)日：2010-07-01
申请号：US12638349
申请日：2009-12-15
申请人： Kazuma Kurihara , Takashi Nakano , Takayuki Shima , Junji Tominaga , Kazuya Fujioka , Ichiro Suehiro
发明人： Kazuma Kurihara , Takashi Nakano , Takayuki Shima , Junji Tominaga , Kazuya Fujioka , Ichiro Suehiro
IPC分类号： B32B3/00 , C23F1/08 , C23F1/00 , C01B21/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G02B3/0012 , Y10T428/24479
摘要： An etching resist containing a metallic oxynitride. The etching resist of the present invention can be suitably used, for example, in the production of a molded article for surface-working an optical member such as a microlens sheet, a light diffusing sheet, a non-reflective sheet, a sheet for encapsulating photosemiconductor elements, an optical waveguide, an optical disk, or a photosensor.
摘要翻译：含有金属氮氧化物的抗蚀剂。本发明的抗蚀剂可以适用于例如在微型透镜片，光漫射片，非反射片，封装用片等的光学部件的表面加工用的成型体的制造中光半导体元件，光波导，光盘或光传感器。

5. 发明授权

US07692787B2 Chip for Raman scattering enhancement and molecular sensing device including the chip 失效
标题翻译：用于拉曼散射增强的芯片和包括芯片的分子感测装置
公开(公告)号：US07692787B2
公开(公告)日：2010-04-06
申请号：US11883405
申请日：2006-01-26
申请人： Makoto Fujimaki , Junji Tominaga , Yasuhiko Iwanabe
发明人： Makoto Fujimaki , Junji Tominaga , Yasuhiko Iwanabe
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658 , G01N21/65 , G01N2021/651
摘要： The present invention aims to provide a chip applied to a molecular sensing device which carries out Raman spectroscopic analysis utilizing Raman scattering enhancement due to plasmons, and that achieves higher sensitivity and stability of its sensing sensitivity and miniaturization, and to provide a molecular sensing device including the chip. As the chip for Raman scattering enhancement applied to the molecular sensing device using the Raman spectroscopic analysis, which has an excitation light source for Raman scattering, a chip for Raman scattering enhancement and a photodetector for observing the Raman scattering, the present invention employs a chip having a molecular detecting element in which a transparent protection material thin film 32 composed of a dielectric material thin film or semiconducting material thin film is formed on a thin film 31 containing the noble metal oxide, and utilizes the Raman scattering enhancement by the thin film containing the noble metal oxide.
摘要翻译：本发明旨在提供一种应用于分子感测装置的芯片，其利用等离子体激元进行拉曼光谱分析，利用拉曼散射增强，并且实现其感测灵敏度和小型化的更高的灵敏度和稳定性，并且提供一种分子感测装置，包括芯片。作为使用拉曼散射用激发光源的拉曼光谱分析法使用拉曼散射增强用芯片和用于观察拉曼散射的光检测器的拉曼散射增强用芯片，本发明采用芯片具有分子检测元件，其中在包含贵金属氧化物的薄膜31上形成由介电材料薄膜或半导体材料薄膜构成的透明保护材料薄膜32，并利用包含贵金属氧化物。

6. 发明申请

US20090323071A1 OPTICAL MEASUREMENT APPARATUS AND OPTICAL MEASUREMENT METHOD FOR A LIQUID OR MOLTEN MATERIAL 有权
标题翻译：光学测量装置和液体或金属材料的光学测量方法
公开(公告)号：US20090323071A1
公开(公告)日：2009-12-31
申请号：US12490137
申请日：2009-06-23
申请人： Masashi KUWAHARA , Toshio Fukaya , Takayuki Shima , Junji Tominaga , Rie Endo , Masahiro Susa , Michio Suzuki , Koichi Tsutsumi
发明人： Masashi KUWAHARA , Toshio Fukaya , Takayuki Shima , Junji Tominaga , Rie Endo , Masahiro Susa , Michio Suzuki , Koichi Tsutsumi
IPC分类号： G01N21/55
CPC分类号： G01N21/211 , G01N21/0332 , G01N2201/0227 , G01N2201/023 , G01N2201/0231
摘要： An apparatus for optical measurement of a liquid or molten material, which has: a transparent container which has a bottom face and is capable of containing a to-be-measured material therein, with the bottom face at least having a flat face and being transparent; and an optical device that irradiates a light to the bottom face of the container and that detects and measures a reflected light from the bottom face; and a method for optically measuring a liquid or molten material using the apparatus.
摘要翻译：一种用于液体或熔融材料的光学测量的装置，其具有：具有底面并且能够容纳待测材料的透明容器，底面至少具有平坦的表面并且是透明的 ; 以及光学装置，其将光照射到所述容器的底面，并且检测并测量来自所述底面的反射光; 以及使用该装置光学测量液体或熔融材料的方法。

7. 发明授权

US07479656B2 Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal 有权
标题翻译：由包括稀土类过渡金属的层状结构的加热部分形成的化合物半导体
公开(公告)号：US07479656B2
公开(公告)日：2009-01-20
申请号：US11109389
申请日：2005-04-19
申请人： Joo-Ho Kim , Junji Tominaga
发明人： Joo-Ho Kim , Junji Tominaga
IPC分类号： H01L29/10
CPC分类号： H01L29/247 , H01L21/76888 , H01L23/5258 , H01L27/10873 , H01L29/263 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
摘要翻译：制造化合物半导体的方法包括以下步骤：形成包括氧或硫的电介质层的层叠结构，以及形成在介电层之间的层间，包括对氧和硫具有高反应性的稀土过渡金属，并加热分层结构。作为元件的化学反应和扩散的结果，可以根据加热部分的温度，将层状结构的加热部分改变为半导体或绝缘体。

8. 发明申请

US20060156986A1 Modification method of surface layer of molded resin article, and modification apparatus of surface layer of molded resin article 审中-公开
公开(公告)号：US20060156986A1
公开(公告)日：2006-07-20
申请号：US11368410
申请日：2006-03-07
申请人： Takashi Hiraga , Tetsuo Moriya , Qiying Chen , Junji Tominaga , Nobufumi Atoda , Norio Tanaka , Hiromitsu Yanagimoto , Ichiro Ueno , Koji Tsujita
发明人： Takashi Hiraga , Tetsuo Moriya , Qiying Chen , Junji Tominaga , Nobufumi Atoda , Norio Tanaka , Hiromitsu Yanagimoto , Ichiro Ueno , Koji Tsujita
IPC分类号： B28B7/38 , C23C16/00
CPC分类号： C23C14/12 , C23C14/24 , C23C14/562 , C23C14/566
摘要： An organic compound having an affinity for a resin of a molded resin article and sublimation properties is allowed to penetrate/disperse into the surface of the molded resin article, thereby modifying and/or coloring a resin surface layer. The molded resin article and the organic compound having the affinity for the resin and the sublimation properties are put into a tightly closable container, and the pressure and the temperature in the container are adjusted to place them in a saturated sublimation pressure state of the organic compound, whereby a vapor of the organic compound is uniformly deposited on the surface of the molded resin article and it further penetrates/disperses into the resin surface layer, and in consequence, the resin surface layer can be modified and/or colored. In addition, the modification of the resin surface layer permits imparting a function thereto.

9. 发明授权

US06707549B2 Molecular sensor and raman spectroscopy process 失效
标题翻译：分子传感器和拉曼光谱法
公开(公告)号：US06707549B2
公开(公告)日：2004-03-16
申请号：US10095938
申请日：2002-03-13
申请人： Junji Tominaga , Masashi Kuwahara , Christophe Mihalcea , Dorothea Buechel , Takashi Kikukawa , Hiroshi Fuji
发明人： Junji Tominaga , Masashi Kuwahara , Christophe Mihalcea , Dorothea Buechel , Takashi Kikukawa , Hiroshi Fuji
IPC分类号： G01J344
CPC分类号： G01N21/658
摘要： A molecular sensor comprising a sensor film containing a metal compound wherein Raman spectroscopic analysis is carried out utilizing the amplification of Raman light by the localized plasmons that fine particles resulting from reduction of the metal compound generate has a small size and a very high sensitivity. A high sensitivity Raman spectroscopic process is provided.
摘要翻译：一种分子传感器，包括含有金属化合物的传感器膜，其中通过局部等离子体激元利用拉曼光的扩增进行拉曼光谱分析，产生的金属化合物的还原产生的细小颗粒具有小尺寸和非常高的灵敏度。提供了高灵敏度拉曼光谱法。

10. 发明授权

US06498776B1 Near field light emitting element and optical head 失效
标题翻译：近场发光元件和光头
公开(公告)号：US06498776B1
公开(公告)日：2002-12-24
申请号：US09494180
申请日：2000-01-31
申请人： Takashi Nakano , Junji Tominaga , Nobufumi Atoda , Akira Sato , Takuji Hatano
发明人： Takashi Nakano , Junji Tominaga , Nobufumi Atoda , Akira Sato , Takuji Hatano
IPC分类号： G11B7135
CPC分类号： G01Q60/22 , G11B7/1387
摘要： A near field light emitting element has a first film made of e.g. Al, an intermediate film made of e.g. SiN and a second film made of e.g. Al on an emergent surface of a solid immersion lens made of a high-refractive material. A first hole is made in the first film, and a second hole is made in the second film. The second hole is smaller in area than the first hole.
摘要翻译：近场发光元件具有由例如玻璃制成的第一膜。 Al，例如由中间膜制成的中间膜。 SiN和由例如硅胶制成的第二膜。 Al在由高折射材料制成的固体浸没透镜的紧急表面上。在第一膜中形成第一孔，在第二膜中形成第二孔。第二个孔的面积小于第一个孔。

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