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1. 发明申请

US20110207284A1 SOLID-STATE MEMORY MANUFACTURING METHOD 有权
标题翻译：固态存储器制造方法
公开(公告)号：US20110207284A1
公开(公告)日：2011-08-25
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

2. 发明授权

US08530314B2 Solid-state memory manufacturing method 有权
标题翻译：固态存储器制造方法
公开(公告)号：US08530314B2
公开(公告)日：2013-09-10
申请号：US12998482
申请日：2009-09-28
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
IPC分类号： H01L21/336
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/144
摘要： A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
摘要翻译：制造固态存储器的本发明的至少一个实施例的方法是制造固态存储器的方法，该固态存储器包括其电特性通过相变而变化的记录膜，该方法包括：通过形成两层或更多层的叠层来形成记录膜，从而提供超晶格结构，每个层具有显示固 - 相相变的母相，记录膜在不是的温度下形成低于母相结晶温度的最高温度。因此，可以制造需要较低电流记录和擦除数据的固态存储器，并具有更大的重写周期数。

3. 发明申请

US20100181548A1 SOLID-STATE MEMORY AND SEMICONDUCTOR DEVICE 失效
标题翻译：固体存储器和半导体器件
公开(公告)号：US20100181548A1
公开(公告)日：2010-07-22
申请号：US12690711
申请日：2010-01-20
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： H01L45/00 , H01L29/18
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb2Te3 layer that includes at least one period of a first lamination of a first Te-atomic layer, a first Sb-atomic layer, a second Te-atomic layer, a second Sb-atomic layer, and a third Te-atomic layer in these order, a GeTe layer that includes at least one period of a second lamination of a fourth Te-atomic layer and a Ge-atomic layer, and an Sb layer that includes a plurality of Sb-atomic layers.
摘要翻译：固体存储器可以包括包括Ge，Sb和Te作为主要成分的记录层。记录层可以包括超晶格。记录层可以包括多层，每层具有显示固态相变的母相，该相变引起记录层的电性能的变化。记录层可以包括Sb 2 Te 3层，其包括第一Te原子层，第一Sb原子层，第二Te原子层，第二Sb原子层和第三Te原子层的第一层叠的至少一个周期 Te原子层，包括第四Te原子层和Ge原子层的第二层叠的至少一个周期的GeTe层和包括多个Sb原子层的Sb层。

4. 发明授权

US08396335B2 Solid-state memory and semiconductor device 失效
标题翻译：固态存储器和半导体器件
公开(公告)号：US08396335B2
公开(公告)日：2013-03-12
申请号：US12690711
申请日：2010-01-20
申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
发明人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A solid memory may include a recording layer including Ge, Sb and Te as major components. The recording layer may include a superlattice. The recording layer may include multi-layers each having a parent phase showing a phase transformation in solid-states, the phase transformation causing change in electrical property of the recording layer. The recording layer may include an Sb2Te3 layer that includes at least one period of a first lamination of a first Te-atomic layer, a first Sb-atomic layer, a second Te-atomic layer, a second Sb-atomic layer, and a third Te-atomic layer in these order, a GeTe layer that includes at least one period of a second lamination of a fourth Te-atomic layer and a Ge-atomic layer, and an Sb layer that includes a plurality of Sb-atomic layers.
摘要翻译：固体存储器可以包括包括Ge，Sb和Te作为主要成分的记录层。记录层可以包括超晶格。记录层可以包括多层，每层具有显示固态相变的母相，该相变引起记录层的电性能的变化。记录层可以包括Sb2Te3层，其包括第一Te原子层，第一Sb原子层，第二Te原子层，第二Sb原子层和第三Te原子层的第一层叠的至少一个周期 Te原子层，包括第四Te原子层和Ge原子层的第二层叠的至少一个周期的GeTe层和包括多个Sb原子层的Sb层。

5. 发明申请

US20090269542A1 OPTICAL RECORDING MEDIUM 失效
标题翻译：光学记录介质
公开(公告)号：US20090269542A1
公开(公告)日：2009-10-29
申请号：US12441609
申请日：2007-08-17
申请人： Takayuki Shima , Yuzo Yamakawa , James Paul Fons , Junji Tominaga
发明人： Takayuki Shima , Yuzo Yamakawa , James Paul Fons , Junji Tominaga
IPC分类号： B32B3/02
CPC分类号： G11B7/252 , G11B7/24 , G11B7/2534 , G11B7/259 , G11B2007/24306 , G11B2007/2432 , G11B2007/25706 , Y10T428/21
摘要： An object of the invention is to write-once record and reproduce, or only reproduce, a mark smaller than the resolution limit; obtain a high level of reproduction performance (CNR and the like); and realize a high level of reproduction durability. In the invention, between a signal reproducing functional layer composed of Sb or Te and a protecting layer there is introduced a thermally stable diffusion preventing layer, and thereby reactions between the signal reproducing functional layer and the protecting layer due to increased temperature can be prevented or suppressed while increasing reproduction durability.
摘要翻译：本发明的目的是一次记录和再现或仅复制小于分辨率限制的标记; 获得高水平的再现性能（CNR等）; 并实现高水平的再现耐久性。在本发明中，在由Sb或Te组成的信号再现功能层与保护层之间引入热稳定的扩散防止层，从而可以防止信号再现功能层与保护层因温度升高而发生反应，抑制同时增加再现耐久性。

6. 发明授权

US08097323B2 Optical recording medium 失效
标题翻译：光记录介质
公开(公告)号：US08097323B2
公开(公告)日：2012-01-17
申请号：US12441609
申请日：2007-08-17
申请人： Takayuki Shima , Yuzo Yamakawa , James Paul Fons , Junji Tominaga
发明人： Takayuki Shima , Yuzo Yamakawa , James Paul Fons , Junji Tominaga
IPC分类号： B32B3/02
CPC分类号： G11B7/252 , G11B7/24 , G11B7/2534 , G11B7/259 , G11B2007/24306 , G11B2007/2432 , G11B2007/25706 , Y10T428/21
摘要： An object of the invention is to write-once record and reproduce, or only reproduce, a mark smaller than the resolution limit; obtain a high level of reproduction performance (CNR and the like); and realize a high level of reproduction durability. In the invention, between a signal reproducing functional layer composed of Sb or Te and a protecting layer there is introduced a thermally stable diffusion preventing layer, and thereby reactions between the signal reproducing functional layer and the protecting layer due to increased temperature can be prevented or suppressed while increasing reproduction durability.
摘要翻译：本发明的目的是一次记录和再现或仅复制小于分辨率限制的标记; 获得高水平的再现性能（CNR等）; 并实现高水平的再现耐久性。在本发明中，在由Sb或Te组成的信号再现功能层与保护层之间引入热稳定的扩散防止层，从而可以防止信号再现功能层与保护层因温度升高而发生反应，抑制同时增加再现耐久性。

7. 发明申请

US20050117478A1 Method for reproducing data and an apparatus for recording and reproducing data 有权
标题翻译：用于再现数据的方法和用于记录和再现数据的装置
公开(公告)号：US20050117478A1
公开(公告)日：2005-06-02
申请号：US10929892
申请日：2004-08-30
申请人： Masashi Kuwahara , Takayuki Shima , Junji Tominaga , Takashi Kikukawa , Narutoshi Fukuzawa , Tatsuhiro Kobayashi
发明人： Masashi Kuwahara , Takayuki Shima , Junji Tominaga , Takashi Kikukawa , Narutoshi Fukuzawa , Tatsuhiro Kobayashi
IPC分类号： G11B7/243 , G11B5/09 , G11B7/005 , G11B7/125 , G11B7/24 , G11B19/26
CPC分类号： G11B19/26 , G11B7/005 , G11B7/1267 , G11B7/24
摘要： A method for reproducing data according to the present invention is adapted for reproducing data recorded in an optical recording disc including a multi-layered body formed by forming a decomposition reaction layer containing noble metal oxide as a primary component and a light absorption layer so as to sandwich a dielectric layer therebetween by irradiating a laser beam onto the optical recording disc and forming a recording mark train including at least one of a recording mark having a length shorter than a resolution limit and a blank region having a length shorter than the resolution limit therein, and is constituted by changing the read power Pr of the laser beam in accordance with a readout linear velocity at which data are to be reproduced from the optical recording disc. According to the thus constituted method for reproducing data, even in the case where the length of a recording mark or the length of a blank region between neighboring recording marks is shorter than the resolution limit, it is possible to record and reproduce a recording mark train including these recording marks and the blank regions. Therefore, this method can be applied to an optical recording medium whose storage capacity is markedly increased.
摘要翻译：根据本发明的再现数据的方法适用于再现记录在包括通过形成含有贵金属氧化物作为主要成分的分解反应层和光吸收层而形成的多层体的光学记录盘中的数据，以便通过将激光束照射到光学记录盘上并形成包括长度小于分辨率极限的记录标记和长度小于分辨率极限的空白区域中的至少一个的记录标记列，夹在其间的电介质层并且通过根据从光记录盘再现数据的读出线速度来改变激光束的读取功率Pr构成。根据这样构成的再现数据的方法，即使在记录标记的长度或相邻记录标记之间的空白区域的长度比分辨率极限短的情况下，也可以记录和再现记录标记列包括这些记录标记和空白区域。因此，该方法可以应用于存储容量明显增加的光记录介质。

8. 发明申请

US20100167015A1 ETCHING RESIST 有权
标题翻译：蚀刻抵抗力
公开(公告)号：US20100167015A1
公开(公告)日：2010-07-01
申请号：US12638349
申请日：2009-12-15
申请人： Kazuma Kurihara , Takashi Nakano , Takayuki Shima , Junji Tominaga , Kazuya Fujioka , Ichiro Suehiro
发明人： Kazuma Kurihara , Takashi Nakano , Takayuki Shima , Junji Tominaga , Kazuya Fujioka , Ichiro Suehiro
IPC分类号： B32B3/00 , C23F1/08 , C23F1/00 , C01B21/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G02B3/0012 , Y10T428/24479
摘要： An etching resist containing a metallic oxynitride. The etching resist of the present invention can be suitably used, for example, in the production of a molded article for surface-working an optical member such as a microlens sheet, a light diffusing sheet, a non-reflective sheet, a sheet for encapsulating photosemiconductor elements, an optical waveguide, an optical disk, or a photosensor.
摘要翻译：含有金属氮氧化物的抗蚀剂。本发明的抗蚀剂可以适用于例如在微型透镜片，光漫射片，非反射片，封装用片等的光学部件的表面加工用的成型体的制造中光半导体元件，光波导，光盘或光传感器。

9. 发明申请

US20090323071A1 OPTICAL MEASUREMENT APPARATUS AND OPTICAL MEASUREMENT METHOD FOR A LIQUID OR MOLTEN MATERIAL 有权
标题翻译：光学测量装置和液体或金属材料的光学测量方法
公开(公告)号：US20090323071A1
公开(公告)日：2009-12-31
申请号：US12490137
申请日：2009-06-23
申请人： Masashi KUWAHARA , Toshio Fukaya , Takayuki Shima , Junji Tominaga , Rie Endo , Masahiro Susa , Michio Suzuki , Koichi Tsutsumi
发明人： Masashi KUWAHARA , Toshio Fukaya , Takayuki Shima , Junji Tominaga , Rie Endo , Masahiro Susa , Michio Suzuki , Koichi Tsutsumi
IPC分类号： G01N21/55
CPC分类号： G01N21/211 , G01N21/0332 , G01N2201/0227 , G01N2201/023 , G01N2201/0231
摘要： An apparatus for optical measurement of a liquid or molten material, which has: a transparent container which has a bottom face and is capable of containing a to-be-measured material therein, with the bottom face at least having a flat face and being transparent; and an optical device that irradiates a light to the bottom face of the container and that detects and measures a reflected light from the bottom face; and a method for optically measuring a liquid or molten material using the apparatus.
摘要翻译：一种用于液体或熔融材料的光学测量的装置，其具有：具有底面并且能够容纳待测材料的透明容器，底面至少具有平坦的表面并且是透明的 ; 以及光学装置，其将光照射到所述容器的底面，并且检测并测量来自所述底面的反射光; 以及使用该装置光学测量液体或熔融材料的方法。

10. 发明授权

US08734964B2 Etching resist 有权
标题翻译：蚀刻抗蚀剂
公开(公告)号：US08734964B2
公开(公告)日：2014-05-27
申请号：US12638349
申请日：2009-12-15
申请人： Kazuma Kurihara , Takashi Nakano , Takayuki Shima , Junji Tominaga , Kazuya Fujioka , Ichiro Suehiro
发明人： Kazuma Kurihara , Takashi Nakano , Takayuki Shima , Junji Tominaga , Kazuya Fujioka , Ichiro Suehiro
IPC分类号： B32B3/00 , C23F1/08 , C23F1/00 , C01B21/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G02B3/0012 , Y10T428/24479
摘要： An etching resist has a first heat-generating layer, a second heat-generating layer, and a metal compound layer including a metallic oxynitride layer containing a metallic oxynitride. The first heat-generating layer, the metallic oxynitride layer, and the second heat-generating layer are directly or indirectly laminated such that the metallic oxynitride layer is positioned between the first heat-generating layer and the second heat-generating layer.
摘要翻译：蚀刻抗蚀剂具有第一发热层，第二发热层和包含含有金属氮氧化物的金属氮氧化物层的金属化合物层。第一发热层，金属氧氮化物层和第二发热层直接或间接层压，使得金属氧氮化物层位于第一发热层和第二发热层之间。

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