专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08587700B2 Method of detecting defects in image sensor, tester for the method, and control signal generator for the method 失效
标题翻译：检测图像传感器缺陷的方法，方法的测试方法以及该方法的控制信号发生器
公开(公告)号：US08587700B2
公开(公告)日：2013-11-19
申请号：US12589157
申请日：2009-10-19
申请人： Jun-taek Lee , Byung-hyun Yim , Kwang-hee Lee , Ji-hoon Jung
发明人： Jun-taek Lee , Byung-hyun Yim , Kwang-hee Lee , Ji-hoon Jung
IPC分类号： H04N9/64 , H04N5/335
CPC分类号： H04N17/002
摘要： A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.
摘要翻译：一种检测图像传感器中的可能从图像传感器的浮动扩散区域发生的缺陷的方法，使用该方法的测试仪和使用该方法的控制信号发生器的方法包括：光电二极管产生与图像信号相对应的电荷; 传输晶体管，其具有连接到光电二极管的第一端子和连接到浮动扩散区域的第二端子，从而响应于电荷传输控制信号将在光电二极管中产生的电荷传输到浮动扩散区域; 以及复位晶体管，其具有通过复位电压施加的第一端子和连接到浮动扩散区域的第二晶体管，从而响应于复位控制信号将复位电压传输到浮动扩散区域。复位晶体管在相对于图像传感器执行的复位电平采样和信号电平采样之间所选择的至少一个采样区域中导通。

2. 发明授权

US07446359B2 Image sensor integrated circuit devices including a photo absorption layer 有权
标题翻译：包括光吸收层的图像传感器集成电路器件
公开(公告)号：US07446359B2
公开(公告)日：2008-11-04
申请号：US11063025
申请日：2005-02-22
申请人： Jun Taek Lee , Woon Phil Yang
发明人： Jun Taek Lee , Woon Phil Yang
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14623 , H01L27/14636
摘要： Integrated circuit devices include a semiconductor substrate and a sensor array region including a plurality of photoelectric conversion elements arranged in an array on the semiconductor substrate. A plurality of interlayer dielectric layers are on the sensor array region and a plurality of light transmissive regions extend through the plurality of interlayer dielectric layers from respective ones of the plurality of photoelectric conversion elements. A plurality of light reflecting metal elements are between ones of the plurality of interlayer dielectric layers, positioned outside of and between ones of the light transmissive regions. A photo absorption layer is formed on an upper surface of ones of the plurality of metal elements that inhibits reflection of light associated with the photoelectric conversion element of one of the light transmissive regions to another of the light-transmissive regions to limit crosstalk between the plurality of photoelectric conversion elements.
摘要翻译：集成电路器件包括半导体衬底和包括在半导体衬底上排列成阵列的多个光电转换元件的传感器阵列区域。多个层间电介质层位于传感器阵列区域上，并且多个透光区域从多个光电转换元件中的相应的多个光电转换元件延伸穿过多个层间电介质层。多个光反射金属元件位于多个层间电介质层之间，位于透光区域之间和之间。在多个金属元件中的一个的上表面上形成光吸收层，其抑制与其中一个透光区域的光电转换元件相关联的光与另一个透光区域的反射，以限制多个金属元件之间的串扰的光电转换元件。

3. 发明申请

US20080158378A1 Image sensor having temperature sensor and driving method thereof 有权
标题翻译：具有温度传感器的图像传感器及其驱动方法
公开(公告)号：US20080158378A1
公开(公告)日：2008-07-03
申请号：US12004716
申请日：2007-12-21
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H04N5/228 , H04N5/335
CPC分类号： H04N5/361 , H04N5/357 , H04N5/374 , H04N5/376
摘要： A method for driving an image sensor includes the steps of: sensing temperature from the image sensor; selecting a voltage level of a control signal in accordance with the sensed temperature; and detecting an image in response to the control signal having the selected voltage level. An image sensor comprises a temperature sensor configured to sense a temperature of the image sensor and a pixel array configured to detect an image in response to a control signal, wherein the control signal varies in voltage level as a function of the sensed temperature.
摘要翻译：一种用于驱动图像传感器的方法包括以下步骤：感测来自图像传感器的温度; 根据感测到的温度选择控制信号的电压电平; 以及响应于具有所选择的电压电平的控制信号来检测图像。图像传感器包括被配置为感测图像传感器的温度的温度传感器和被配置为响应于控制信号检测图像的像素阵列，其中控制信号作为感测温度的函数在电压电平上变化。

4. 发明授权

US06433369B1 Solid state imaging device for achieving enhanced zooming characteristics and method of making the same 有权
公开(公告)号：US06433369B1
公开(公告)日：2002-08-13
申请号：US09862425
申请日：2001-05-23
申请人： Sang-Il Jung , Jun-Taek Lee
发明人： Sang-Il Jung , Jun-Taek Lee
IPC分类号： H01L27148
摘要： A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area. The discharge area includes a field insulating layer interposed between the insulating layer and the conductor extending from the barrier layer over the surface of the semiconductor substrate, and a discharge layer of the first conductivity type formed under the surface of the semiconductor substrate and adjacent the barrier layer of the barrier area over the surface layer. An impurity concentration of the discharge layer is greater than that of the first impurity layer.

5. 发明申请

US20140217474A1 UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR INCLUDING THE SAME 有权
标题翻译：图像传感器和图像传感器的单元像素包括它们
公开(公告)号：US20140217474A1
公开(公告)日：2014-08-07
申请号：US14088793
申请日：2013-11-25
申请人： Jun-Taek Lee , Sang-Il Jung , Yi-Tae Kim , Woon-Phil Yang
发明人： Jun-Taek Lee , Sang-Il Jung , Yi-Tae Kim , Woon-Phil Yang
IPC分类号： H01L31/101 , H01L27/148
CPC分类号： H01L27/14605 , H01L27/14609 , H01L27/1463 , H01L27/14641
摘要： A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region
摘要翻译：图像传感器的单位像素包括光电转换区域，浮动扩散区域和传输门极。光电转换区域由半导体衬底的隔离区限定的有源区。光电转换区域产生与入射光对应的电荷。传输门将电荷传送到位于有源区域中的浮动扩散区域。传输门包括相对于参考线分开的第一和第二部分，并且第一或第二部分中的至少一个不与隔离区域重叠

6. 发明申请

US20070114583A1 Complementary metal-oxide-silicon (CMOS) image sensor and method of forming the same 有权
标题翻译：互补金属氧化物硅（CMOS）图像传感器及其形成方法
公开(公告)号：US20070114583A1
公开(公告)日：2007-05-24
申请号：US11592577
申请日：2006-11-04
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H01L31/113 , H01L31/062 , H01L29/94
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14683
摘要： A complementary metal-oxide silicon (CMOS) image sensor includes a semiconductor layer of a first conductivity type, a plurality of pixels located in the semiconductor layer, a photoelectric converter located in each of the plurality of pixels in the semiconductor layer and includes a region doped with impurities of a second conductivity type. The CMOS image sensor further includes a deep well of a first conductivity type located in a lower position than the photoelectric converter in the semiconductor layer and has a higher impurity concentration than that of the semiconductor layer. The deep well is located only in a portion of each of the plurality of pixels.
摘要翻译：互补金属氧化物硅（CMOS）图像传感器包括第一导电类型的半导体层，位于半导体层中的多个像素，位于半导体层中的多个像素中的每一个中的光电转换器，掺杂有第二导电类型的杂质。 CMOS图像传感器还包括位于比半导体层中的光电转换器更低的位置的第一导电类型的深阱，并且具有比半导体层的杂质浓度更高的杂质浓度。深阱仅位于多个像素中的每一个的一部分中。

7. 发明申请

US20060180745A1 Image sensor 有权
标题翻译：图像传感器
公开(公告)号：US20060180745A1
公开(公告)日：2006-08-17
申请号：US11351441
申请日：2006-02-10
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H01L31/00 , H01L27/00
CPC分类号： H04N5/3592 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14656
摘要： An image sensor includes a photoelectric converter formed in a semiconductor substrate to generate and integrate charges resulting from incident light, a first charge transmitter transmitting integrated charges to a charge detector, an overflow drain region discharging excess charges generated by the photoelectric converter, and a second charge transmitter transmitting the excess charges to the overflow drain region and having a width which is at least half of a span of the photoelectric converter.
摘要翻译：图像传感器包括：形成在半导体衬底中的光电转换器，用于产生并积分由入射光产生的电荷;将电荷积分到电荷检测器的第一充电发射器，放出由光电转换器产生的过量电荷的溢出漏极区;以及第二充电发射器将过剩的电荷传输到溢出漏极区域并且具有至少是光电转换器跨度的一半的宽度。

8. 发明申请

US20050285166A1 Monitoring patterns for an imaging device and method of monitoring a process using the monitoring patterns 审中-公开
标题翻译：成像设备的监控模式以及使用监控模式监视进程的方法
公开(公告)号：US20050285166A1
公开(公告)日：2005-12-29
申请号：US11090065
申请日：2005-03-28
申请人： Jun-taek Lee , Byung-hyun Yim , Seok-ha Lee , Sun-yong Park
发明人： Jun-taek Lee , Byung-hyun Yim , Seok-ha Lee , Sun-yong Park
IPC分类号： H01L27/146 , H01L31/062 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14601
摘要： Monitoring patterns for an imaging device and a method of monitoring processing using the monitoring patterns are disclosed. Processing errors in the imaging device are detected and estimated by measuring resistances between main impurity regions and associated sub impurity regions in the monitoring patterns. Monitoring patterns corresponding to mis-aligned regions in the imaging device have varying resistances between the main impurity region and the associated sub impurity regions.
摘要翻译：公开了一种用于成像设备的监视模式和使用监视模式来监视处理的方法。通过在监测模式中测量主要杂质区域和相关联的子杂质区域之间的电阻来检测和估计成像装置中的处理误差。对应于成像装置中的不对准区域的监测图案在主要杂质区域和相关联的子杂质区域之间具有变化的电阻。

9. 发明授权

US06926802B2 Exhaust ring of dry etching device 有权
标题翻译：干蚀刻装置排气环
公开(公告)号：US06926802B2
公开(公告)日：2005-08-09
申请号：US10102689
申请日：2002-03-22
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32834
摘要： An exhaust ring made of a material other than quartz, thereby reducing the creation of polymer particles on the exhaust ring is provided in the present invention. The exhaust ring of the present invention is formed of two parts wherein only one part is exposed to and etched by plasma. Accordingly, only the etched and damaged part will require replacement due to plasma damage, thus reducing production costs. More particularly, the exhaust ring comprises an upper ring that is exposed to plasma and a lower ring that is not exposed to plasma.
摘要翻译：在本发明中提供了由石英以外的材料制成的排气环，从而减少排气环上的聚合物颗粒的产生。本发明的排气环由两部分组成，其中只有一部分暴露于等离子体并被其蚀刻。因此，只有蚀刻和损坏的部件将由于等离子体损坏而需要更换，从而降低生产成本。更具体地，排气环包括暴露于等离子体的上环和不暴露于等离子体的下环。

10. 发明授权

US06686259B2 Method for manufacturing solid state image pick-up device 失效
标题翻译：固态摄像装置的制造方法
公开(公告)号：US06686259B2
公开(公告)日：2004-02-03
申请号：US09994507
申请日：2001-11-27
申请人： Sang-sik Park , Mikio Takagi , Jae-heon Choi , Sang-il Jung , Jun-taek Lee
发明人： Sang-sik Park , Mikio Takagi , Jae-heon Choi , Sang-il Jung , Jun-taek Lee
IPC分类号： H01L21322
CPC分类号： H01L21/3221 , H01L27/14601 , H01L27/14665
摘要： In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.
摘要翻译：在制造能够提高吸气效率的固体摄像装置的方法中，提供了可以形成固体摄像装置的正面的半导体衬底和与正面相反的后侧。随后，在半导体衬底的后侧形成包含具有预定浓度的吸杂杂质的多晶硅层。接下来，包含用于吸杂的杂质的多晶硅层的预定厚度被氧化，并且用于吸杂的杂质被冷凝成还原的多晶硅层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式