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1. 发明申请

US20080158378A1 Image sensor having temperature sensor and driving method thereof 有权
标题翻译：具有温度传感器的图像传感器及其驱动方法
公开(公告)号：US20080158378A1
公开(公告)日：2008-07-03
申请号：US12004716
申请日：2007-12-21
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H04N5/228 , H04N5/335
CPC分类号： H04N5/361 , H04N5/357 , H04N5/374 , H04N5/376
摘要： A method for driving an image sensor includes the steps of: sensing temperature from the image sensor; selecting a voltage level of a control signal in accordance with the sensed temperature; and detecting an image in response to the control signal having the selected voltage level. An image sensor comprises a temperature sensor configured to sense a temperature of the image sensor and a pixel array configured to detect an image in response to a control signal, wherein the control signal varies in voltage level as a function of the sensed temperature.
摘要翻译：一种用于驱动图像传感器的方法包括以下步骤：感测来自图像传感器的温度; 根据感测到的温度选择控制信号的电压电平; 以及响应于具有所选择的电压电平的控制信号来检测图像。图像传感器包括被配置为感测图像传感器的温度的温度传感器和被配置为响应于控制信号检测图像的像素阵列，其中控制信号作为感测温度的函数在电压电平上变化。

2. 发明授权

US06433369B1 Solid state imaging device for achieving enhanced zooming characteristics and method of making the same 有权
公开(公告)号：US06433369B1
公开(公告)日：2002-08-13
申请号：US09862425
申请日：2001-05-23
申请人： Sang-Il Jung , Jun-Taek Lee
发明人： Sang-Il Jung , Jun-Taek Lee
IPC分类号： H01L27148
摘要： A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area. The discharge area includes a field insulating layer interposed between the insulating layer and the conductor extending from the barrier layer over the surface of the semiconductor substrate, and a discharge layer of the first conductivity type formed under the surface of the semiconductor substrate and adjacent the barrier layer of the barrier area over the surface layer. An impurity concentration of the discharge layer is greater than that of the first impurity layer.

3. 发明授权

US07659563B2 Complementary metal-oxide-silicon (CMOS) image sensor and method of forming the same 有权
标题翻译：互补金属氧化物硅（CMOS）图像传感器及其形成方法
公开(公告)号：US07659563B2
公开(公告)日：2010-02-09
申请号：US11592577
申请日：2006-11-04
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14683
摘要： A complementary metal-oxide silicon (CMOS) image sensor includes a semiconductor layer of a first conductivity type, a plurality of pixels located in the semiconductor layer, a photoelectric converter located in each of the plurality of pixels in the semiconductor layer and includes a region doped with impurities of a second conductivity type. The CMOS image sensor further includes a deep well of a first conductivity type located in a lower position than the photoelectric converter in the semiconductor layer and has a higher impurity concentration than that of the semiconductor layer. The deep well is located only in a portion of each of the plurality of pixels.
摘要翻译：互补金属氧化物硅（CMOS）图像传感器包括第一导电类型的半导体层，位于半导体层中的多个像素，位于半导体层中的多个像素中的每一个中的光电转换器，掺杂有第二导电类型的杂质。 CMOS图像传感器还包括位于比半导体层中的光电转换器更低的位置的第一导电类型的深阱，并且具有比半导体层的杂质浓度更高的杂质浓度。深阱仅位于多个像素中的每一个的一部分中。

4. 发明授权

US07427740B2 Image sensor with drain region between optical black regions 有权
标题翻译：图像传感器，在光学黑色区域之间具有漏极区域
公开(公告)号：US07427740B2
公开(公告)日：2008-09-23
申请号：US11333886
申请日：2006-01-18
申请人： Sun-Yong Park , Jun-Taek Lee
发明人： Sun-Yong Park , Jun-Taek Lee
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L27/14818
摘要： An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain region formed adjacent to the first optical black region, the drain region discharging excess electrons generated in the active pixel region, and a second optical black region formed adjacent to the drain region, wherein another plurality of the shaded unit pixels are arranged therein.
摘要翻译：图像传感器包括有源像素区域，其包括以矩阵图案排列的多个单位像素，与有源像素区域相邻形成的第一光学黑色区域，其中布置有多个阴影单位像素，相邻形成的漏极区域在第一光学黑色区域中，排出在有源像素区域中产生的多余电子的漏极区域和与漏极区域相邻形成的第二光学黑色区域，其中多个阴影单位像素被布置在其中。

5. 发明申请

US20060175535A1 Image sensor 有权
标题翻译：图像传感器
公开(公告)号：US20060175535A1
公开(公告)日：2006-08-10
申请号：US11333886
申请日：2006-01-18
申请人： Sun-Yong Park , Jun-Taek Lee
发明人： Sun-Yong Park , Jun-Taek Lee
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L27/14818
摘要： An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain region formed adjacent to the first optical black region, the drain region discharging excess electrons generated in the active pixel region, and a second optical black region formed adjacent to the drain region, wherein another plurality of the shaded unit pixels are arranged therein.
摘要翻译：图像传感器包括有源像素区域，其包括以矩阵图案排列的多个单位像素，与有源像素区域相邻形成的第一光学黑色区域，其中布置有多个阴影单位像素，相邻形成的漏极区域在第一光学黑色区域中，排出在有源像素区域中产生的多余电子的漏极区域和与漏极区域相邻形成的第二光学黑色区域，其中多个阴影单位像素被布置在其中。

6. 发明申请

US20140217474A1 UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR INCLUDING THE SAME 有权
标题翻译：图像传感器和图像传感器的单元像素包括它们
公开(公告)号：US20140217474A1
公开(公告)日：2014-08-07
申请号：US14088793
申请日：2013-11-25
申请人： Jun-Taek Lee , Sang-Il Jung , Yi-Tae Kim , Woon-Phil Yang
发明人： Jun-Taek Lee , Sang-Il Jung , Yi-Tae Kim , Woon-Phil Yang
IPC分类号： H01L31/101 , H01L27/148
CPC分类号： H01L27/14605 , H01L27/14609 , H01L27/1463 , H01L27/14641
摘要： A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region
摘要翻译：图像传感器的单位像素包括光电转换区域，浮动扩散区域和传输门极。光电转换区域由半导体衬底的隔离区限定的有源区。光电转换区域产生与入射光对应的电荷。传输门将电荷传送到位于有源区域中的浮动扩散区域。传输门包括相对于参考线分开的第一和第二部分，并且第一或第二部分中的至少一个不与隔离区域重叠

7. 发明申请

US20070114583A1 Complementary metal-oxide-silicon (CMOS) image sensor and method of forming the same 有权
标题翻译：互补金属氧化物硅（CMOS）图像传感器及其形成方法
公开(公告)号：US20070114583A1
公开(公告)日：2007-05-24
申请号：US11592577
申请日：2006-11-04
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H01L31/113 , H01L31/062 , H01L29/94
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14683
摘要： A complementary metal-oxide silicon (CMOS) image sensor includes a semiconductor layer of a first conductivity type, a plurality of pixels located in the semiconductor layer, a photoelectric converter located in each of the plurality of pixels in the semiconductor layer and includes a region doped with impurities of a second conductivity type. The CMOS image sensor further includes a deep well of a first conductivity type located in a lower position than the photoelectric converter in the semiconductor layer and has a higher impurity concentration than that of the semiconductor layer. The deep well is located only in a portion of each of the plurality of pixels.
摘要翻译：互补金属氧化物硅（CMOS）图像传感器包括第一导电类型的半导体层，位于半导体层中的多个像素，位于半导体层中的多个像素中的每一个中的光电转换器，掺杂有第二导电类型的杂质。 CMOS图像传感器还包括位于比半导体层中的光电转换器更低的位置的第一导电类型的深阱，并且具有比半导体层的杂质浓度更高的杂质浓度。深阱仅位于多个像素中的每一个的一部分中。

8. 发明申请

US20060180745A1 Image sensor 有权
标题翻译：图像传感器
公开(公告)号：US20060180745A1
公开(公告)日：2006-08-17
申请号：US11351441
申请日：2006-02-10
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H01L31/00 , H01L27/00
CPC分类号： H04N5/3592 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14656
摘要： An image sensor includes a photoelectric converter formed in a semiconductor substrate to generate and integrate charges resulting from incident light, a first charge transmitter transmitting integrated charges to a charge detector, an overflow drain region discharging excess charges generated by the photoelectric converter, and a second charge transmitter transmitting the excess charges to the overflow drain region and having a width which is at least half of a span of the photoelectric converter.
摘要翻译：图像传感器包括：形成在半导体衬底中的光电转换器，用于产生并积分由入射光产生的电荷;将电荷积分到电荷检测器的第一充电发射器，放出由光电转换器产生的过量电荷的溢出漏极区;以及第二充电发射器将过剩的电荷传输到溢出漏极区域并且具有至少是光电转换器跨度的一半的宽度。

9. 发明授权

US06926802B2 Exhaust ring of dry etching device 有权
标题翻译：干蚀刻装置排气环
公开(公告)号：US06926802B2
公开(公告)日：2005-08-09
申请号：US10102689
申请日：2002-03-22
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32834
摘要： An exhaust ring made of a material other than quartz, thereby reducing the creation of polymer particles on the exhaust ring is provided in the present invention. The exhaust ring of the present invention is formed of two parts wherein only one part is exposed to and etched by plasma. Accordingly, only the etched and damaged part will require replacement due to plasma damage, thus reducing production costs. More particularly, the exhaust ring comprises an upper ring that is exposed to plasma and a lower ring that is not exposed to plasma.
摘要翻译：在本发明中提供了由石英以外的材料制成的排气环，从而减少排气环上的聚合物颗粒的产生。本发明的排气环由两部分组成，其中只有一部分暴露于等离子体并被其蚀刻。因此，只有蚀刻和损坏的部件将由于等离子体损坏而需要更换，从而降低生产成本。更具体地，排气环包括暴露于等离子体的上环和不暴露于等离子体的下环。

10. 发明授权

US07990441B2 Image sensor having temperature sensor and driving method thereof 有权
标题翻译：具有温度传感器的图像传感器及其驱动方法
公开(公告)号：US07990441B2
公开(公告)日：2011-08-02
申请号：US12004716
申请日：2007-12-21
申请人： Jun-Taek Lee
发明人： Jun-Taek Lee
IPC分类号： H04N9/64
CPC分类号： H04N5/361 , H04N5/357 , H04N5/374 , H04N5/376
摘要： A method for driving an image sensor includes the steps of: sensing temperature from the image sensor; selecting a voltage level of a control signal in accordance with the sensed temperature; and detecting an image in response to the control signal having the selected voltage level. An image sensor comprises a temperature sensor configured to sense a temperature of the image sensor and a pixel array configured to detect an image in response to a control signal, wherein the control signal varies in voltage level as a function of the sensed temperature.
摘要翻译：一种用于驱动图像传感器的方法包括以下步骤：感测来自图像传感器的温度; 根据感测到的温度选择控制信号的电压电平; 以及响应于具有所选择的电压电平的控制信号来检测图像。图像传感器包括被配置为感测图像传感器的温度的温度传感器和被配置为响应于控制信号检测图像的像素阵列，其中控制信号作为感测温度的函数在电压电平上变化。

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