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1. 发明授权

US06291304B1 Method of fabricating a high voltage transistor using P+ buried layer 有权
标题翻译：使用P +掩埋层制造高压晶体管的方法
公开(公告)号：US06291304B1
公开(公告)日：2001-09-18
申请号：US09396520
申请日：1999-09-15
申请人： Jun-Lin Tsaz , Ruey-Hsin Liu , Jyh-Min Jiang , Jei-Feng Hwang
发明人： Jun-Lin Tsaz , Ruey-Hsin Liu , Jyh-Min Jiang , Jei-Feng Hwang
IPC分类号： H01L21331
CPC分类号： H01L29/66272 , H01L29/0821 , H01L29/7392
摘要： A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device)d a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the bipolar base. This allows much higher breakdown voltages to be achieved. In particular, the device will not break down at the bottom of the base-collector junction which is the weak spot for conventional devices. A process for manufacturing this device is described. A particular feature of this new process is that the N type epitaxial layer that is grown over the P+ layer is only about half the thickness of its counterpart in the conventional device. The process is fully compatible with conventional BiCMOS processes and has lower cost.
摘要翻译：公开了一种用于高电压双极晶体管的新设计。代替掩埋子集电极（在NPN器件中将为N +）d使用掩埋的P +层。该P +层的存在导致其本身和双极基底之间的夹断。这样可以实现更高的击穿电压。特别地，该装置不会在作为常规装置的弱点的基极 - 集电极结的底部分解。对该装置的制造方法进行说明。这个新工艺的一个特点是在P +层上生长的N型外延层只是传统器件中其对应厚度的大约一半。该工艺与传统的BiCMOS工艺完全兼容，成本较低。

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