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1. 发明授权

US08331264B2 Wireless sensor network and method for configuration thereof 有权
标题翻译：无线传感器网络及其配置方法
公开(公告)号：US08331264B2
公开(公告)日：2012-12-11
申请号：US12344693
申请日：2008-12-29
申请人： Jun Mo Yang
发明人： Jun Mo Yang
IPC分类号： H04L12/28 , G08C17/00 , H04H20/71 , H04W4/00
CPC分类号： H04L67/12
摘要： A wireless sensor network and a method for configuration thereof are includes a plurality of sensor nodes and a sink node. The network configuration method includes collecting location information about the sensor nodes by the sink node, setting the sensor nodes, which have sensing regions include a transmitting region of the sink node, to an active node based on the location information, and configuring a network composed of the active nodes. Dead nodes are detected by the sink node, and inactive nodes are activated to reconfigure the network as needed due to the detected dead nodes.
摘要翻译：无线传感器网络及其配置方法包括多个传感器节点和汇聚节点。网络配置方法包括：通过汇聚节点收集关于传感器节点的位置信息，根据位置信息，将具有感测区域的感测区域包括宿节点的发射区域的传感器节点设置为主动节点，并配置组成的网络的活动节点。死节点由宿节点检测，并且由于检测到的死节点，活动节点被激活以根据需要重新配置网络。

2. 发明申请

US20060157742A1 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
公开(公告)号：US20060157742A1
公开(公告)日：2006-07-20
申请号：US11361526
申请日：2006-02-24
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

3. 发明授权

US06330490B1 Data vending machine system and method thereof 失效
标题翻译：数据自动售货机系统及其方法
公开(公告)号：US06330490B1
公开(公告)日：2001-12-11
申请号：US09486657
申请日：2000-02-25
申请人： Jong Woo Kim , Soon Seop Ryoo , Jun Mo Yang
发明人： Jong Woo Kim , Soon Seop Ryoo , Jun Mo Yang
IPC分类号： G06F1700
CPC分类号： G07F17/305
摘要： The present invention relates to a data vending machine system and a method thereof, and in particular to a data vending machine system and a method thereof which are capable of selecting a certain music file, recording the selected music file onto a recording medium and printing a selected image and character message on a surface of the recording medium. The present invention includes a host computer for storing a digital music file and a plurality of remote data vending machine connected with the host computer. The data vending machine includes at least one listing and reserving apparatus for providing a reservation function of the music files selected by the customer, a database and fabrication control apparatus for storing a part of the music files stored in the host computer and recording the selected music file onto the recording medium, and a charge paying unit. There are further provided a main apparatus which performs the entire control operation of the data vending machine so that the music files selected by the customer is fabricated as one music album, and a network apparatus for thereby effectively managing the database of the remote data vending machine and minimizing the waiting time of the customer.
摘要翻译：数据自动售货机系统及其方法技术领域本发明涉及一种数据自动售货机系统及其方法，特别涉及一种数据自动售货机系统及其方法，该数据自动售货机系统及其方法能够选择某个音乐文件，将所选择的音乐文件记录到记录介质上并打印所选择的图像和字符消息在记录介质的表面上。本发明包括用于存储数字音乐文件的主计算机和与主计算机连接的多个远程数据自动售货机。数据自动售货机包括至少一个用于提供客户选择的音乐文件的预约功能的列表和预约装置，数据库和制造控制装置，用于存储存储在主计算机中的一部分音乐文件并记录所选择的音乐记录到记录介质上，以及收费单元。进一步提供了一种主要装置，其执行数据自动售货机的整体控制操作，使得由客户选择的音乐文件被制造为一个音乐专辑，以及网络装置，用于有效地管理远程数据自动售货机的数据库并尽量减少客户的等待时间。

4. 发明申请

US20120173767A1 APPARATUS AND METHOD FOR REMOTELY CONTROLLING PERIPHERAL DEVICES IN MOBILE COMMUNICATION TERMINAL 有权
标题翻译：移动通信终端外围设备远程控制的设备和方法
公开(公告)号：US20120173767A1
公开(公告)日：2012-07-05
申请号：US13343415
申请日：2012-01-04
申请人： Du-Seok Kim , Hyun-Cheol Park , Giu-Yeol Kim , Jun-Mo Yang , Dong-Yun Shin , Hyo-Yong Jeong
发明人： Du-Seok Kim , Hyun-Cheol Park , Giu-Yeol Kim , Jun-Mo Yang , Dong-Yun Shin , Hyo-Yong Jeong
IPC分类号： G06F3/00
CPC分类号： G06F3/04817 , G06F3/04842 , G06F3/0488 , G06F9/24 , G06F9/4411 , G06F15/177 , G08C17/02 , G08C2201/92 , H04L12/281 , H04L12/282 , H04L67/303 , H04L67/34 , H04W4/80
摘要： According to one embodiment, a method for remotely controlling peripheral devices in a mobile communication terminal includes acquiring a profile for a controlled peripheral device, configuring a control application for the controlled peripheral device based on the acquired profile, and controlling the controlled peripheral device using the configured control application.
摘要翻译：根据一个实施例，一种用于在移动通信终端中远程控制外围设备的方法包括：获取受控外围设备的配置文件，基于获取的配置文件配置受控外围设备的控制应用，以及使用配置控制应用程序。

5. 发明授权

US08856411B2 Apparatus and method for remotely controlling peripheral devices in mobile communication terminal 有权
标题翻译：用于远程控制移动通信终端中的外围设备的装置和方法
公开(公告)号：US08856411B2
公开(公告)日：2014-10-07
申请号：US13343415
申请日：2012-01-04
申请人： Du-Seok Kim , Hyun-Cheol Park , Giu-Yeol Kim , Jun-Mo Yang , Dong-Yun Shin , Hyo-Yong Jeong
发明人： Du-Seok Kim , Hyun-Cheol Park , Giu-Yeol Kim , Jun-Mo Yang , Dong-Yun Shin , Hyo-Yong Jeong
IPC分类号： G06F13/12 , G06F13/38 , G06F3/00 , G06F9/00 , G06F9/24 , G06F15/177 , G06F9/44
CPC分类号： G06F3/04817 , G06F3/04842 , G06F3/0488 , G06F9/24 , G06F9/4411 , G06F15/177 , G08C17/02 , G08C2201/92 , H04L12/281 , H04L12/282 , H04L67/303 , H04L67/34 , H04W4/80
摘要： According to one embodiment, a method for remotely controlling peripheral devices in a mobile communication terminal includes acquiring a profile for a controlled peripheral device, configuring a control application for the controlled peripheral device based on the acquired profile, and controlling the controlled peripheral device using the configured control application.
摘要翻译：根据一个实施例，一种用于在移动通信终端中远程控制外围设备的方法包括：获取受控外围设备的配置文件，基于获取的配置文件配置受控外围设备的控制应用，以及使用配置控制应用程序。

6. 发明申请

US20130336831A1 METHOD FOR MANUFACTURING A MOLYBDENUM SPUTTERING TARGET FOR BACK ELECTRODE OF CIGS SOLAR CELL 有权
标题翻译：用于制造CIGS太阳能电池背面电极的多晶硅溅射靶的方法
公开(公告)号：US20130336831A1
公开(公告)日：2013-12-19
申请号：US14002666
申请日：2012-03-07
申请人： Ik Hyun Oh , Hyun Kuk Park , Seung Min Lee , Jun Mo Yang
发明人： Ik Hyun Oh , Hyun Kuk Park , Seung Min Lee , Jun Mo Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F3/1017 , B22F3/1028 , B22F3/105 , B22F3/14 , B22F2003/1051 , B22F2999/00 , C22C1/045 , H01L31/022425 , H01L31/03923 , Y02E10/541 , Y02P70/521 , B22F3/1003 , B22F2201/20 , B22F2203/11
摘要： A method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell is provided to minimize thermal activating reaction by employing an electric discharge plasma sintering process. The method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell comprises the steps of: charging molybdenum powder in a mold of graphite material, mounting the mold in a chamber of an electric discharge sintering apparatus, making a vacuum in the chamber, forming the molybdenum powder to the final target temperature while maintaining constant pressure on the molybdenum powder, heating the molybdenum powder in a predetermined heating pattern when reaching the final target temperature, maintaining the final target temperature for 1 to 10 minutes, and cooling the inside of the chamber while maintaining a constant pressure.
摘要翻译：提供了一种用于制造CIGS太阳能电池背面电极的钼溅射靶的方法，以通过采用放电等离子体烧结工艺来最小化热激活反应。用于制造CIGS太阳能电池背面电极用钼溅射靶的方法包括以下步骤：在石墨材料的模具中装入钼粉末，将模具安装在放电烧结装置的腔室中，在在钼粉末保持恒定压力的同时将钼粉末形成最终目标温度，当达到最终目标温度时以预定加热模式加热钼粉末，将最终目标温度保持1至10分钟，并将在室内，同时保持恒定的压力。

7. 发明授权

US07868458B2 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
标题翻译：具有外延C49-硅化钛（TiSi2）层的半导体器件及其制造方法
公开(公告)号：US07868458B2
公开(公告)日：2011-01-11
申请号：US12316766
申请日：2008-12-16
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.
摘要翻译：本发明涉及具有C49相位的外延生长硅化钛层的半导体器件及其制造方法。该钛硅化物层具有不会改变钛层的相的预定的界面能，因此可以防止钛层的凝聚现象和切槽现象。半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔; 外延生长的硅化钛层，其具有C49相，并且形成在设置在接触孔内的暴露的硅衬底上; 以及形成在所述硅化钛层的上表面上的金属层。

8. 发明申请

US20090168670A1 WIRELESS SENSOR NETWORK AND METHOD FOR CONFIGURATION THEREOF 有权
标题翻译：无线传感器网络及其配置方法
公开(公告)号：US20090168670A1
公开(公告)日：2009-07-02
申请号：US12344693
申请日：2008-12-29
申请人： Jun Mo YANG
发明人： Jun Mo YANG
IPC分类号： H04W16/00
CPC分类号： H04L67/12
摘要： A wireless sensor network and a method for configuration thereof are includes a plurality of sensor nodes and a sink node. The network configuration method includes collecting location information about the sensor nodes by the sink node, setting the sensor nodes, which have sensing regions include a transmitting region of the sink node, to an active node based on the location information, and configuring a network composed of the active nodes. Dead nodes are detected by the sink node, and inactive nodes are activated to reconfigure the network as needed due to the detected dead nodes.
摘要翻译：无线传感器网络及其配置方法包括多个传感器节点和汇聚节点。网络配置方法包括：通过汇聚节点收集关于传感器节点的位置信息，根据位置信息，将具有感测区域的感测区域包括宿节点的发射区域的传感器节点设置为主动节点，并配置组成的网络的活动节点。死节点由宿节点检测，并且由于检测到的死节点，活动节点被激活以根据需要重新配置网络。

9. 发明授权

US07037827B2 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
标题翻译：具有外延C49-硅化钛（TiSi2）层的半导体器件及其制造方法
公开(公告)号：US07037827B2
公开(公告)日：2006-05-02
申请号：US10749878
申请日：2003-12-30
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.
摘要翻译：具有外延生长的C49相的硅化钛层的半导体器件及其制造方法。钛硅化物层具有不会使钛层的相变化的预定的界面能，因此可以防止钛层的凝聚和沟槽现象的发生。半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔。外延生长的硅化钛层，其相位为C49，并形成在设置在接触孔内的暴露的硅衬底上; 并且在硅化钛层的上表面上形成金属层。

10. 发明授权

US07476617B2 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
公开(公告)号：US07476617B2
公开(公告)日：2009-01-13
申请号：US11361526
申请日：2006-02-24
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

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