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1. 发明授权

US07302385B2 Speech restoration system and method for concealing packet losses 失效
标题翻译：用于隐藏分组丢失的语音恢复系统和方法
公开(公告)号：US07302385B2
公开(公告)日：2007-11-27
申请号：US10615268
申请日：2003-07-07
申请人： Ho Sang Sung , Dae Hwan Hwang , Moon Keun Lee , Ki Seung Lee , Young Cheol Park , Dae Hee Youn
发明人： Ho Sang Sung , Dae Hwan Hwang , Moon Keun Lee , Ki Seung Lee , Young Cheol Park , Dae Hee Youn
IPC分类号： G10L19/00
CPC分类号： G10L19/005 , G10L19/04 , G10L25/93
摘要： Provided are a speech restoration system and method for concealing packet losses. The system includes a demultiplexer that demultiplexes an input bit stream and divides the input bit stream into several packets; a packet loss concealing unit that produces and outputs a linear spectrum pair (LSP) coefficient representing the vocal tract of voice and an excitation signal corresponding to a lost frame, when a packet loss occurs; and a speech restoring unit that synthesizes voice using the packets input from the demultiplexer, outputs the result as restored voice, and synthesizes voice corresponding to a lost packet using the LSP coefficient and the excitation signal input from the packet loss concealing unit and outputs the result as restored voice when the lost packet is detected, wherein the packet loss concealing unit repeats linear prediction coefficients (LPCs) of a last-received valid frame, produces a first excitation signal for the lost frame using a time scale modification (TSM) method, when the lost frame is voiceless, and produces a second excitation signal by re-estimating a gain parameter based on the first excitation signal, when the lost frame is voiced.
摘要翻译：提供了一种用于隐藏分组丢失的语音恢复系统和方法。该系统包括解复用器，其对输入比特流进行解复用并将输入比特流分成若干分组; 分组丢失隐藏单元，当发生分组丢失时，产生并输出表示语音的声道的线性频谱对（LSP）系数和对应于丢失帧的激励信号; 以及语音恢复单元，其使用从解复用器输入的分组合成语音，将结果输出为恢复的语音，并且使用从分组丢失隐藏单元输入的LSP系数和激励信号来合成与丢失分组对应的语音，并输出结果作为在检测到丢失分组时的恢复语音，其中分组丢失隐藏单元重复最后接收的有效帧的线性预测系数（LPC），使用时间缩放修改（TSM）方法产生丢失帧的第一激励信号，当丢失的帧是无声的，并且当丢失的帧被发音时，通过基于第一激励信号重新估计增益参数来产生第二激励信号。

2. 发明申请

US20060157742A1 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
公开(公告)号：US20060157742A1
公开(公告)日：2006-07-20
申请号：US11361526
申请日：2006-02-24
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

3. 发明授权

US07476617B2 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
公开(公告)号：US07476617B2
公开(公告)日：2009-01-13
申请号：US11361526
申请日：2006-02-24
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

4. 发明申请

US20090146306A1 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
标题翻译：具有外延C49-硅化钛（TiSi2）层的半导体器件及其制造方法
公开(公告)号：US20090146306A1
公开(公告)日：2009-06-11
申请号：US12316766
申请日：2008-12-16
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.
摘要翻译：本发明涉及具有C49相位的外延生长硅化钛层的半导体器件及其制造方法。该钛硅化物层具有不会使钛层的相变化的规定的界面能，因此能够防止钛层的凝聚和切槽现象的发生。半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔; 外延生长的硅化钛层，其具有C49相，并且形成在设置在接触孔内的暴露的硅衬底上; 以及形成在所述硅化钛层的上表面上的金属层。

5. 发明授权

US07868458B2 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
标题翻译：具有外延C49-硅化钛（TiSi2）层的半导体器件及其制造方法
公开(公告)号：US07868458B2
公开(公告)日：2011-01-11
申请号：US12316766
申请日：2008-12-16
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.
摘要翻译：本发明涉及具有C49相位的外延生长硅化钛层的半导体器件及其制造方法。该钛硅化物层具有不会改变钛层的相的预定的界面能，因此可以防止钛层的凝聚现象和切槽现象。半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔; 外延生长的硅化钛层，其具有C49相，并且形成在设置在接触孔内的暴露的硅衬底上; 以及形成在所述硅化钛层的上表面上的金属层。

6. 发明授权

US07037827B2 Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same 失效
标题翻译：具有外延C49-硅化钛（TiSi2）层的半导体器件及其制造方法
公开(公告)号：US07037827B2
公开(公告)日：2006-05-02
申请号：US10749878
申请日：2003-12-30
申请人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
发明人： Moon-Keun Lee , Tae-Kwon Lee , Jun-Mo Yang , Tae-Su Park , Yoon-Jik Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76867 , H01L29/41783 , H01L29/456 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.
摘要翻译：具有外延生长的C49相的硅化钛层的半导体器件及其制造方法。钛硅化物层具有不会使钛层的相变化的预定的界面能，因此可以防止钛层的凝聚和沟槽现象的发生。半导体器件包括：硅层; 形成在所述硅层上的绝缘层，其中所述绝缘层的部分部分被打开以形成暴露所述硅层的部分部分的接触孔。外延生长的硅化钛层，其相位为C49，并形成在设置在接触孔内的暴露的硅衬底上; 并且在硅化钛层的上表面上形成金属层。

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