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    • 1. 发明申请
    • Systems and methods for forming a time-averaged line image
    • 用于形成时间平均线图像的系统和方法
    • US20120100728A1
    • 2012-04-26
    • US13199016
    • 2011-08-17
    • Serguei AnikitchevJames T. McWhirterJoseph E. Gortych
    • Serguei AnikitchevJames T. McWhirterJoseph E. Gortych
    • H01L21/268G02B26/10
    • H01L21/268B23K26/0738B23K26/352B23K26/55
    • Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput.
    • 公开了用于形成沿着其长度具有相对高的强度均匀度的时间平均线图像的系统和方法。 该方法包括在像平面处形成具有长轴方向上的第一强度不均匀量的线图像,并形成与主图像至少部分重叠的二次图像。 该方法还包括根据扫描轮廓在主图像的至少一部分和长轴方向上扫描次级图像,以形成具有第二强度不均匀度的时间平均修改线图像 -axis方向小于第一个量。 对于半导体晶片的激光退火,晶片扫描路径的相邻扫描的线图像重叠量大幅度减少,从而增加晶片生产量。
    • 2. 发明授权
    • Systems and methods for forming a time-averaged line image
    • 用于形成时间平均线图像的系统和方法
    • US08026519B1
    • 2011-09-27
    • US12925517
    • 2010-10-22
    • Serguei AnikitchevJames T. McWhirterJoseph E. Gortych
    • Serguei AnikitchevJames T. McWhirterJoseph E. Gortych
    • H01L29/04
    • H01L21/268B23K26/0738B23K26/352B23K26/55
    • Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput.
    • 公开了用于形成沿着其长度具有相对高的强度均匀度的时间平均线图像的系统和方法。 该方法包括在像平面处形成具有长轴方向上的第一强度不均匀量的线图像,并形成与主图像至少部分重叠的二次图像。 该方法还包括根据扫描轮廓在主图像的至少一部分和长轴方向上扫描次级图像,以形成具有第二强度不均匀度的时间平均修改线图像 -axis方向小于第一个量。 对于半导体晶片的激光退火,晶片扫描路径的相邻扫描的线图像重叠量大幅度减少,从而增加晶片生产量。
    • 3. 发明授权
    • Systems and methods for forming a time-averaged line image
    • 用于形成时间平均线图像的系统和方法
    • US08822353B2
    • 2014-09-02
    • US13199016
    • 2011-08-17
    • Serguei AnikitchevJames T. McWhirterJoseph E. Gortych
    • Serguei AnikitchevJames T. McWhirterJoseph E. Gortych
    • B23K26/00H01L21/268B23K26/073
    • H01L21/268B23K26/0738B23K26/352B23K26/55
    • Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput.
    • 公开了用于形成沿着其长度具有相对高的强度均匀度的时间平均线图像的系统和方法。 该方法包括在像平面处形成具有长轴方向上的第一强度不均匀量的线图像,并形成与主图像至少部分重叠的二次图像。 该方法还包括根据扫描轮廓在主图像的至少一部分和长轴方向上扫描次级图像,以形成具有第二强度不均匀度的时间平均修改线图像 -axis方向小于第一个量。 对于半导体晶片的激光退火,晶片扫描路径的相邻扫描的线图像重叠量大幅度减少,从而增加晶片生产量。
    • 6. 发明授权
    • Compact work light with high illumination uniformity
    • 紧凑的工作灯具有高照明均匀性
    • US06939009B2
    • 2005-09-06
    • US10884759
    • 2004-07-01
    • Robert E. FischerJoseph E. Gortych
    • Robert E. FischerJoseph E. Gortych
    • G03B21/14G03B29/00F21L4/00F21V7/00G03B21/22
    • G03B21/208F21V5/006F21Y2115/10
    • A compact work light that generates a light beam having high brightness and high illumination uniformity is disclosed. The work light includes a housing that houses a light source, a light homogenizer and an imaging lens in an operational relationship. The housing is attached to an adjustable mount, which can be attached to a fixed region such as wall, or to a movable support member such as a lamp base. The light source generates light that is uniformized by the light homogenizer. The homogenized light is then imaged by the imaging lens as a highly uniform, bright beam spot having a sharp boundary. The beam spot is formed at a selectable distance from the work light by varying the imaging lens and/or the adjustable mount. The work light is useful for a variety of industrial, professional and personal applications, including but not limited to a reading light, a dentist light, a head lamp, a head light and an optical projector.
    • 公开了一种紧凑的工作光,其产生具有高亮度和高照度均匀性的光束。 工作灯包括容纳光源的壳体,光均化器和具有操作关系的成像透镜。 壳体附接到可调节的安装件,其可以附接到诸如壁的固定区域,或者附接到可移动的支撑构件,例如灯座。 光源产生由光均化器均匀化的光。 然后,通过成像透镜将均匀化的光成像为具有尖锐边界的高度均匀的亮光束点。 通过改变成像透镜和/或可调整支架,将光束点形成在距离工作光线可选择的距离处。 工作灯对于各种工业,专业和个人应用是有用的,包括但不限于阅读灯,牙医灯,头灯,头灯和光学投影仪。
    • 8. 发明申请
    • QKD station with EMI signature suppression
    • QKD站具有EMI签名抑制功能
    • US20090202074A1
    • 2009-08-13
    • US12384968
    • 2009-04-10
    • Alexei TrifonovJoseph E. Gortych
    • Alexei TrifonovJoseph E. Gortych
    • H04K1/00H04L9/08G06F7/58
    • H04L9/0852
    • Methods and systems for suppressing the electromagnetic interference (EMI) signature generated by a QKD station are disclosed. One of the methods includes generating two or more modulator drive signals corresponding to two or more of the n possible modulator states of the particular QKD protocol. The modulator drive signals are sent to a random number generation (RNG) unit, which randomly selects one of the two or more modulator drive signals and passes it to the modulator. Another method involves generating two modulator drive signals, wherein the voltage sum is constant. One signal is sent to the modulator while the other is sent to a circuit-terminating element, which can be a second modulator. The method suppresses the EMI signature associated with individual modulation states. This prevents an eavesdropper from gaining information about the modulator states via the EMI signature, which information could otherwise yield information about the exchanged key.
    • 公开了用于抑制由QKD站产生的电磁干扰(EMI)签名的方法和系统。 方法之一包括产生对应于特定QKD协议的n个可能调制器状态中的两个或更多个的两个或更多个调制器驱动信号。 调制器驱动信号被发送到随机数生成(RNG)单元,其随机地选择两个或更多个调制器驱动信号中的一个并将其传递给调制器。 另一种方法涉及产生两个调制器驱动信号,其中电压和是恒定的。 一个信号被发送到调制器,而另一个信号被发送到电路终端元件,其可以是第二调制器。 该方法抑制与各个调制状态相关联的EMI签名。 这样可以防止窃听者通过EMI签名获得关于调制器状态的信息,哪些信息可能会产生关于所交换的密钥的信息。