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1. 发明授权

US08174057B2 CMOS image device with local impurity region 有权
标题翻译：具有局部杂质区的CMOS图像器件
公开(公告)号：US08174057B2
公开(公告)日：2012-05-08
申请号：US12395757
申请日：2009-03-02
申请人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
发明人： Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14689
摘要： According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
摘要翻译：根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。

2. 发明授权

US5985744A Forming a silicide in predetermined areas of a semiconductor device 失效
标题翻译：在半导体器件的预定区域中形成硅化物
公开(公告)号：US5985744A
公开(公告)日：1999-11-16
申请号：US964913
申请日：1997-11-05
申请人： Jong Wan Jung
发明人： Jong Wan Jung
IPC分类号： H01L21/82 , H01L21/285 , H01L21/60 , H01L21/8234 , H01L27/088 , H01L21/3205
CPC分类号： H01L21/76897 , H01L21/28518 , H01L21/823418 , H01L21/823443
摘要： A method for fabricating a semiconductor device includes forming a plurality of field oxide layers on a semiconductor substrate to define an active region; forming a plurality of gate electrodes each having sidewall spacers on the active region of the semiconductor substrate, depositing a metal layer on the semiconductor substrate including the plurality of gate electrodes, defining a first region and a second region, removing the metal layer over the second region, and forming a silicide layer on the gate electrode and on the semiconductor substrate over the first region with a first annealing process.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成多个场氧化物层以限定有源区; 在所述半导体衬底的有源区上形成多个栅电极，所述多个栅电极具有侧壁间隔物，在包括所述多个栅电极的所述半导体衬底上沉积限定第一区和第二区的金属层，在所述第二区上去除所述金属层并且通过第一退火工艺在第一区域上的栅电极和半导体衬底上形成硅化物层。

3. 发明申请

US20070190679A1 Image sensor and method of fabricating the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070190679A1
公开(公告)日：2007-08-16
申请号：US11706370
申请日：2007-02-15
申请人： Jong-Wan Jung
发明人： Jong-Wan Jung
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14689
摘要： An image sensor may include a semiconductor substrate having a pixel array region and a logic region. A first gate electrode may be formed on the pixel array region of the semiconductor substrate. A lower electrode may be formed on a portion of the logic region of the semiconductor substrate. A first capping layer may be formed on at least a portion of the lower electrode. A dielectric layer may be formed on the first capping layer. An upper electrode may be formed on the dielectric layer. The first gate electrode and the lower electrode may include a polysilicon layer, and the first capping layer may include at least one of a metal layer and a metal silicide layer.
摘要翻译：图像传感器可以包括具有像素阵列区域和逻辑区域的半导体衬底。第一栅电极可以形成在半导体衬底的像素阵列区域上。下部电极可以形成在半导体衬底的逻辑区域的一部分上。第一覆盖层可以形成在下电极的至少一部分上。可以在第一覆盖层上形成电介质层。可以在电介质层上形成上电极。第一栅电极和下电极可以包括多晶硅层，并且第一覆盖层可以包括金属层和金属硅化物层中的至少一个。

4. 发明授权

US06479357B1 Method for fabricating semiconductor device with copper gate electrode 失效
标题翻译：铜栅电极制造半导体器件的方法
公开(公告)号：US06479357B1
公开(公告)日：2002-11-12
申请号：US09617275
申请日：2000-07-17
申请人： Jong-Wan Jung
发明人： Jong-Wan Jung
IPC分类号： H01L21336
CPC分类号： H01L29/66545 , H01L21/28061 , H01L29/4941
摘要： A method for fabricating a semiconductor device including the steps of: forming a gate insulation film on the upper surface of a semiconductor substrate; forming a dummy layer pattern on the upper surface of the gate insulation film; forming an insulating side wall spacer on both side walls of the dummy layer pattern; injecting an impurity ion into the semiconductor substrate of the both sides of the side wall spacer, to form a source and a drain; forming an insulation layer in a manner that the entire upper surface of the semiconductor substrate becomes higher than the dummy layer pattern; performing a chemical-mechanical polishing step, to expose the upper surface of the dummy layer pattern; etching the dummy layer pattern and forming a trench on the gate insulation film; forming a barrier film on the inner wall of the trench and on the upper surface of the insulation layer; and filling the trench with copper layer.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底的上表面上形成栅极绝缘膜; 在栅极绝缘膜的上表面上形成虚设层图案; 在所述虚设层图案的两个侧壁上形成绝缘侧壁间隔物; 将杂质离子注入到侧壁间隔物的两侧的半导体衬底中，以形成源极和漏极; 以半导体衬底的整个上表面变得高于虚设层图案的方式形成绝缘层; 执行化学机械抛光步骤，以暴露所述虚设层图案的上表面; 蚀刻虚设层图案并在栅极绝缘膜上形成沟槽; 在沟槽的内壁和绝缘层的上表面上形成阻挡膜; 并用铜层填充沟槽。

5. 发明授权

US07825438B2 CMOS image sensor having drive transistor with increased gate surface area and method of manufacturing the same 有权
标题翻译： CMOS图像传感器具有增加的栅表面面积的驱动晶体管及其制造方法
公开(公告)号：US07825438B2
公开(公告)日：2010-11-02
申请号：US11463317
申请日：2006-08-09
申请人： Jong-wan Jung , Duck-hyung Lee
发明人： Jong-wan Jung , Duck-hyung Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14643 , Y10S438/964
摘要： A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.
摘要翻译： CMOS图像传感器单元包括在其上具有表面的第一导电类型的半导体有源区和有源区中的P-N结型光电二极管。驱动晶体管也设置在半导体有源区中。驱动晶体管具有被配置为在图像捕获操作期间（即在从图像接收的光子捕获期间）接收在P-N结光电二极管中产生的电荷的栅电极。该驱动晶体管具有栅电极和延伸在栅电极下方的波导沟道区。轮廓通道区域具有大于栅电极的长度的有效通道长度。

6. 发明授权

US07601580B2 Image sensor and method of fabricating the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07601580B2
公开(公告)日：2009-10-13
申请号：US11706370
申请日：2007-02-15
申请人： Jong-Wan Jung
发明人： Jong-Wan Jung
IPC分类号： H01L21/8238
CPC分类号： H01L27/14609 , H01L27/14689
摘要： An image sensor may include a semiconductor substrate having a pixel array region and a logic region. A first gate electrode may be formed on the pixel array region of the semiconductor substrate. A lower electrode may be formed on a portion of the logic region of the semiconductor substrate. A first capping layer may be formed on at least a portion of the lower electrode. A dielectric layer may be formed on the first capping layer. An upper electrode may be formed on the dielectric layer. The first gate electrode and the lower electrode may include a polysilicon layer, and the first capping layer may include at least one of a metal layer and a metal silicide layer.
摘要翻译：图像传感器可以包括具有像素阵列区域和逻辑区域的半导体衬底。第一栅电极可以形成在半导体衬底的像素阵列区域上。下部电极可以形成在半导体衬底的逻辑区域的一部分上。第一覆盖层可以形成在下电极的至少一部分上。可以在第一覆盖层上形成电介质层。可以在电介质层上形成上电极。第一栅电极和下电极可以包括多晶硅层，并且第一覆盖层可以包括金属层和金属硅化物层中的至少一个。

7. 发明申请

US20060214249A1 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20060214249A1
公开(公告)日：2006-09-28
申请号：US11389728
申请日：2006-03-27
申请人： Jung-Hyun Nam , Jong-Wan Jung
发明人： Jung-Hyun Nam , Jong-Wan Jung
IPC分类号： H01L31/0232
CPC分类号： H01L27/14603 , H01L27/1463
摘要： An image sensor and a method of fabricating the image sensor are provided. The image sensor includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type. The deep well is formed at a predetermined depth in the semiconductor substrate to divide the semiconductor substrate into a first conductivity type upper substrate area and a lower substrate area. The image sensor further includes a plurality of unit pixels integrating charges corresponding to incident light and comprising first conductivity type ion-implantation areas. The first conductivity type ion-implantation areas are separated from one another. Moreover, at least one unit pixel among the plurality of unit pixels further comprises the first conductivity type upper substrate area that is positioned under a first conductivity type ion-implantation area included in the unit pixel. Further, the at least one unit pixel among the plurality of unit pixels extends beyond the first conductivity type ion-implantation area and is electrically isolated from first conductivity type ion-implantation areas included in adjacent unit pixels of the plurality of unit pixels.
摘要翻译：提供了图像传感器和制造图像传感器的方法。图像传感器包括具有第一导电类型的半导体衬底，具有第二导电类型的深阱。深阱形成在半导体衬底中的预定深度处，以将半导体衬底分成第一导电类型的上衬底区域和下衬底区域。图像传感器还包括积分与入射光对应的电荷并且包括第一导电型离子注入区域的多个单位像素。第一导电型离子注入区彼此分离。此外，多个单位像素中的至少一个单位像素还包括位于单位像素中包括的第一导电类型离子注入区域之下的第一导电类型上基板区域。此外，多个单位像素中的至少一个单位像素延伸超过第一导电类型离子注入区域，并且与包括在多个单位像素的相邻单位像素中的第一导电类型离子注入区域电隔离。

8. 发明授权

US06498085B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06498085B2
公开(公告)日：2002-12-24
申请号：US09726441
申请日：2000-12-01
申请人： Jong-Wan Jung , Jeong Seok Nam
发明人： Jong-Wan Jung , Jeong Seok Nam
IPC分类号： H01L213205
CPC分类号： H01L21/28123 , H01L29/49
摘要： The claimed invention relates to a semiconductor device and a method of fabricating the semiconductor device. More particularly, the claimed invention relates to a method of fabricating the semiconductor device in which parts of a gate electrode at the ends of a channel are lightly doped compared to the center part of the gate electrode, thereby eliminating a hump on a subthreshold current slope. To achieve the objects of the claimed invention, there is provided a semiconductor device that includes a semiconductor substrate divided into an isolation region and an active region. A gate oxide film is formed on a first upper surface of the active region. A gate electrode is formed on a second upper surface of the gate oxide film, the gate electrode having a first part and a second part. The first part is more lightly doped with impurities than the second part. A channel is formed in an upper end of the active region proximate the gate electrode. A source and a drain are formed in the active region on opposite sides of the gate electrode.
摘要翻译：所要求保护的发明涉及半导体器件和制造半导体器件的方法。更具体地说，要求保护的发明涉及一种制造半导体器件的方法，其中与栅电极的中心部分相比，沟道末端的栅电极的部分被轻掺杂，从而消除了亚阈值电流斜率上的隆起。为了实现所要求保护的发明的目的，提供了一种半导体器件，其包括分成隔离区域和有源区域的半导体衬底。栅极氧化膜形成在有源区的第一上表面上。栅电极形成在栅极氧化膜的第二上表面上，栅电极具有第一部分和第二部分。第一部分比第二部分更容易掺杂杂质。在靠近栅电极的有源区的上端形成沟道。源极和漏极形成在栅电极的相对侧上的有源区中。

9. 发明授权

US07579637B2 Image sensing device for reducing pixel-to-pixel crosstalk 有权
标题翻译：用于减少像素到像素串扰的图像感测装置
公开(公告)号：US07579637B2
公开(公告)日：2009-08-25
申请号：US11389728
申请日：2006-03-27
申请人： Jung-Hyun Nam , Jong-Wan Jung
发明人： Jung-Hyun Nam , Jong-Wan Jung
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/1463
摘要： An image sensor and a method of fabricating the image sensor are provided. The image sensor includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type. The deep well is formed at a predetermined depth in the semiconductor substrate to divide the semiconductor substrate into a first conductivity type upper substrate area and a lower substrate area. The image sensor further includes a plurality of unit pixels integrating charges corresponding to incident light and comprising first conductivity type ion-implantation areas. The first conductivity type ion-implantation areas are separated from one another. Moreover, at least one unit pixel among the plurality of unit pixels further comprises the first conductivity type upper substrate area that is positioned under a first conductivity type ion-implantation area included in the unit pixel. Further, the at least one unit pixel among the plurality of unit pixels extends beyond the first conductivity type ion-implantation area and is electrically isolated from first conductivity type ion-implantation areas included in adjacent unit pixels of the plurality of unit pixels.
摘要翻译：提供了图像传感器和制造图像传感器的方法。图像传感器包括具有第一导电类型的半导体衬底，具有第二导电类型的深阱。深阱形成在半导体衬底中的预定深度处，以将半导体衬底分成第一导电类型的上衬底区域和下衬底区域。图像传感器还包括积分与入射光对应的电荷并且包括第一导电型离子注入区域的多个单位像素。第一导电型离子注入区彼此分离。此外，多个单位像素中的至少一个单位像素还包括位于单位像素中包括的第一导电类型离子注入区域之下的第一导电类型上基板区域。此外，多个单位像素中的至少一个单位像素延伸超过第一导电类型离子注入区域，并且与包括在多个单位像素的相邻单位像素中的第一导电类型离子注入区域电隔离。

10. 发明申请

US20070034965A1 CMOS Image Sensor Having Drive Transistor with Increased Gate Surface Area and Method of Manufacturing the Same 有权
标题翻译：具有驱动晶体管的CMOS图像传感器具有增加的栅极表面积及其制造方法
公开(公告)号：US20070034965A1
公开(公告)日：2007-02-15
申请号：US11463317
申请日：2006-08-09
申请人： Jong-wan Jung , Duck-hyung Lee
发明人： Jong-wan Jung , Duck-hyung Lee
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14643 , Y10S438/964
摘要： A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.
摘要翻译： CMOS图像传感器单元包括在其上具有表面的第一导电类型的半导体有源区和有源区中的P-N结型光电二极管。驱动晶体管也设置在半导体有源区中。驱动晶体管具有被配置为在图像捕获操作期间（即在从图像接收的光子捕获期间）接收在P-N结光电二极管中产生的电荷的栅电极。该驱动晶体管具有栅电极和延伸在栅电极下方的波导沟道区。轮廓通道区域具有大于栅电极的长度的有效通道长度。

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