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1. 发明授权

US07898584B2 Image sensors for reducing flicker and methods of manufacturing the same 有权
标题翻译：用于减少闪烁的图像传感器及其制造方法
公开(公告)号：US07898584B2
公开(公告)日：2011-03-01
申请号：US11339735
申请日：2006-01-26
申请人： Jeong Ho Lyu , Duck Hyung Lee , Kab sung Uem , Hee Geun Jeong
发明人： Jeong Ho Lyu , Duck Hyung Lee , Kab sung Uem , Hee Geun Jeong
IPC分类号： H04N3/14 , H01L21/8238 , H01L21/3205 , H01L21/4763 , H01L21/469
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/1469
摘要： In one aspect, an image sensor is provided which includes an active pixel array and a control circuit connected to the active pixel array. The active pixel array of this aspect includes a plurality of first gate dielectric layers, and the control circuit includes a plurality of second gate dielectric layers, where the first gate dielectric layers are plasma nitrided silicon oxide layers.
摘要翻译：在一个方面，提供一种图像传感器，其包括有源像素阵列和连接到有源像素阵列的控制电路。该方面的有源像素阵列包括多个第一栅极电介质层，并且控制电路包括多个第二栅极电介质层，其中第一栅极电介质层是等离子体氮化氧化硅层。

2. 发明授权

US07875947B2 Filter, color filter array, method of manufacturing the color filter array, and image sensor 有权
标题翻译：过滤器，滤色器阵列，制造滤色器阵列的方法和图像传感器
公开(公告)号：US07875947B2
公开(公告)日：2011-01-25
申请号：US11668120
申请日：2007-01-29
申请人： Chang-rok Moon , Koe-hyun Paik , Duck-hyung Lee , Sung-ho Hwang
发明人： Chang-rok Moon , Koe-hyun Paik , Duck-hyung Lee , Sung-ho Hwang
IPC分类号： H01L27/146 , H01L31/0232
CPC分类号： G02B5/201 , G02B5/285 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： Provided are color filters formed of alternately stacked inorganic materials having different refractive indices, a color filter array, a method of manufacturing the color filter array, and an image sensor. A color filter can include a substrate and first and second inorganic films configured to filter light of a specific wavelength corresponding to a predetermined color, wherein the first and second inorganic films can be alternately stacked on the substrate and have different refractive indices from each other. The refractive index difference between the first inorganic film and the second inorganic film is at least 0.8. The color filter can be formed by alternately stacking the first and second inorganic films. The first inorganic film and the second inorganic film can have a refractive index of 1.3 to 6.0 in a visible light region of 400 to 700 nm, and can be formed of a material selected from the group consisting of SiO2, SiON, SiN, and Si.
摘要翻译：提供了由具有不同折射率的交替堆叠的无机材料形成的滤色器，滤色器阵列，制造滤色器阵列的方法和图像传感器。滤色器可以包括基板和被配置为过滤对应于预定颜色的特定波长的光的第一和第二无机膜，其中第一和第二无机膜可以交替堆叠在基板上并且具有彼此不同的折射率。第一无机膜与第二无机膜的折射率差为0.8以上。可以通过交替堆叠第一和第二无机膜来形成滤色器。第一无机膜和第二无机膜在400〜700nm的可见光区域的折射率可以为1.3〜6.0，可以由选自SiO 2，SiON，SiN和Si的材料形成。

3. 发明授权

US07750280B2 Back-illuminated image sensor and method of fabricating the same 有权
标题翻译：背照式图像传感器及其制造方法
公开(公告)号：US07750280B2
公开(公告)日：2010-07-06
申请号：US11987607
申请日：2007-12-03
申请人： Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
发明人： Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon , Doo-Won Kwon
IPC分类号： B05D5/12
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要： A back-illuminated image sensor may include a substrate in which photodiodes are disposed; an insulating layer on a first surface of the substrate; an interconnection layer in the insulating layer; an anti-reflection layer between the substrate and the insulating layer; a plurality of color filters on a second surface of the substrate opposite to the first surface; and a microlens on the color filters. Because the anti-reflection layer may be between the substrate and an interlayer dielectric layer, the reflection rate of light that passes through the substrate and arrives at an interface between the substrate and the interlayer insulating layer may be reduced.
摘要翻译：背照式图像传感器可以包括其中设置有光电二极管的基板; 在所述基板的第一表面上的绝缘层; 绝缘层中的互连层; 在所述基板和所述绝缘层之间的抗反射层; 在所述基板的与所述第一表面相对的第二表面上的多个滤色器; 和滤色片上的微透镜。因为防反射层可以在基板和层间电介质层之间，所以可以减少穿过基板并到达基板与层间绝缘层之间的界面的光的反射率。

4. 发明授权

US07675099B2 Image sensor and method of forming the same 有权
标题翻译：图像传感器及其形成方法
公开(公告)号：US07675099B2
公开(公告)日：2010-03-09
申请号：US11999227
申请日：2007-12-04
申请人： Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
发明人： Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
IPC分类号： H01L31/113
CPC分类号： H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L31/02165 , H01L31/02327
摘要： Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.
摘要翻译：提供了一种图像传感器和形成图像传感器的方法。图像传感器具有介于光电二极管和层间绝缘层之间的基底多层反射层。光电二极管具有与层间绝缘层相邻的第一表面和与第一表面相对的第二表面。这里，外部光入射到光电二极管的第二表面上。此外，图像传感器包括围绕光电二极管的侧壁多层反射层。

5. 发明授权

US07671314B2 Image sensor including active pixel sensor array with photoelectric conversion region 有权
标题翻译：图像传感器包括带有光电转换区域的有源像素传感器阵列
公开(公告)号：US07671314B2
公开(公告)日：2010-03-02
申请号：US11482172
申请日：2006-07-07
申请人： Duck-hyung Lee , Kang-bok Lee , Seok-ha Lee
发明人： Duck-hyung Lee , Kang-bok Lee , Seok-ha Lee
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14641
摘要： In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.
摘要翻译：在一个方面，提供一种包括单位有源像素阵列的图像传感器。每个单位有源像素包括包括多个光电转换区域的第一有源区域和与第一有源区域分离的第二有源区域。第一有源区域以行和列布置，以便在其间限定行和列延伸的间隔，并且第二有源区域位于在第一有源区域之间限定的行和列延伸间隔的相应交点处。

6. 发明授权

US07541628B2 Image sensors including active pixel sensor arrays 有权
标题翻译：图像传感器包括有源像素传感器阵列
公开(公告)号：US07541628B2
公开(公告)日：2009-06-02
申请号：US11481733
申请日：2006-07-07
申请人： Duck-hyung Lee , Kang-bok Lee , Seok-ha Lee
发明人： Duck-hyung Lee , Kang-bok Lee , Seok-ha Lee
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/14641
摘要： In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.
摘要翻译：在一个方面，提供一种包括单位有源像素阵列的图像传感器。每个单位有源像素包括包括多个光电转换区域的第一有源区域和与第一有源区域分离的第二有源区域。第一有源区域以行和列布置，以便在其间限定行和列延伸的间隔，并且第二有源区域位于在第一有源区域之间限定的行和列延伸间隔的相应交点处。

7. 发明授权

US07531790B2 Image sensor and method for fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07531790B2
公开(公告)日：2009-05-12
申请号：US11889252
申请日：2007-08-10
申请人： Yun-Ki Lee , Duck-Hyung Lee
发明人： Yun-Ki Lee , Duck-Hyung Lee
IPC分类号： G01J3/50 , H01J5/16
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： An image sensor includes at least one photoelectric conversion area on a semiconductor substrate, a color filter over the photoelectric conversion area, and an apochromatic microlens over the color filter.
摘要翻译：图像传感器包括半导体衬底上的至少一个光电转换区域，光电转换区域上的滤色器以及滤色器上的复消色差微透镜。

8. 发明申请

US20080036024A1 Image sensors and methods of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080036024A1
公开(公告)日：2008-02-14
申请号：US11889122
申请日：2007-08-09
申请人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
发明人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
IPC分类号： H01L31/0232 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14645
摘要： An image sensor may include a semiconductor substrate having unit pixel regions on the semiconductor substrate; photoelectric converters formed in the unit pixel regions; interlayer insulating films covering the photoelectric converters and having opening portions formed above the photoelectric converters; a light-transmissive portion filling the opening portions; color filters formed on the light-transmissive portion; and microlenses formed on the color filters. The microlenses may include a plurality of concentric circle patterns and a plurality of arc patterns arranged around the concentric circle patterns. An arc pattern around a specific concentric circle pattern may have a same center as the specific concentric circle pattern. A method of manufacturing the image sensor may include forming the photoelectric converters; forming the interlayer insulating films; removing parts of the interlayer insulating films to form the opening portions; forming the light-transmissive portion to fill the opening portions; forming the color filters; and forming the microlenses.
摘要翻译：图像传感器可以包括在半导体衬底上具有单位像素区域的半导体衬底; 形成在单位像素区域的光电转换器; 层间绝缘膜覆盖光电转换器，并具有形成在光电转换器上方的开口部分; 填充所述开口部的透光部; 形成在透光部分上的滤色器; 和在滤色器上形成的微透镜。微透镜可以包括多个同心圆形图案和围绕同心圆图案布置的多个弧形图案。围绕特定同心圆图案的弧形图案可以具有与特定同心圆图案相同的中心。图像传感器的制造方法可以包括形成光电转换器; 形成层间绝缘膜; 去除层间绝缘膜的部分以形成开口部分; 形成所述透光部以填充所述开口部; 形成滤色片; 并形成微透镜。

9. 发明申请

US20060244020A1 CMOS image sensors and methods of manufacturing the same 审中-公开
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20060244020A1
公开(公告)日：2006-11-02
申请号：US11319603
申请日：2005-12-29
申请人： Duck-Hyung Lee
发明人： Duck-Hyung Lee
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1463 , H01L27/14689
摘要： A CMOS image sensor (CIS) includes an active unit pixel having an Indium-doped impurity layer located below a transfer gate which transfers charges between a photo-receiving element and a floating diffusion region of the active unit pixel.
摘要翻译： CMOS图像传感器（CIS）包括有源单元像素，其具有位于传输门下方的掺杂铟的杂质层，其在受光元件和有源单元像素的浮动扩散区域之间传送电荷。

10. 发明授权

US06660594B2 Methods of forming integrated circuit devices having gate oxide layers with different thicknesses and integrated circuit devices formed thereby 失效
标题翻译：形成具有不同厚度的栅极氧化物层的集成电路器件的方法和由此形成的集成电路器件
公开(公告)号：US06660594B2
公开(公告)日：2003-12-09
申请号：US10216506
申请日：2002-08-09
申请人： Seung-hoon Han , Duck-hyung Lee , Dong-woo Kim
发明人： Seung-hoon Han , Duck-hyung Lee , Dong-woo Kim
IPC分类号： H01L218234
CPC分类号： H01L21/823481 , H01L21/76229 , H01L21/823462 , Y10S438/981
摘要： An integrated circuit device, such as a merged device, is formed by forming a first gate oxide layer on a first region, such as a logic circuit region, of a substrate. A conductive layer is formed on the first gate oxide layer. A second gate oxide layer is formed on a second region, such as a cell array region, of the substrate. A first gate pattern is formed on the second gate oxide layer. The conductive layer and the first gate oxide layer are patterned to form a second gate pattern. A silicide layer is formed on the second gate pattern and in the substrate adjacent to the second gate pattern.
摘要翻译：通过在基板的第一区域（例如逻辑电路区域）上形成第一栅极氧化层，形成诸如合并器件的集成电路器件。在第一栅极氧化物层上形成导电层。在基板的第二区域（例如单元阵列区域）上形成第二栅极氧化物层。第一栅极图案形成在第二栅极氧化物层上。图案化导电层和第一栅极氧化物层以形成第二栅极图案。在第二栅极图案上和与第二栅极图案相邻的衬底中形成硅化物层。

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