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1. 发明申请

US20210156050A1 ELECTROSPINNING APPARATUS FOR PRODUCING ULTRAFINE FIBERS HAVING IMPROVED CHARGED SOLUTION CONTROL STRUCTURE AND SOLUTION TRANSFER PUMP THEREFOR 有权
公开(公告)号：US20210156050A1
公开(公告)日：2021-05-27
申请号：US15733762
申请日：2019-04-05
申请人： Jong-Su PARK
发明人： Jong-Su Park , Woong Huh , Youn-Chang Lee , Woong-June Hwang
IPC分类号： D01D5/00 , F04B23/02 , F04B17/03
摘要： An electrospinning apparatus for producing ultrafine fibers according to the present invention comprises: a cylindrical metal guide disposed to surround a hollow tube needle, which receives a charged solution and discharges the charged solution in the form of a filament, wherein a high voltage is applied to the cylindrical metal guide to control droplet stability of the charged solution; and a strip-shaped metal guide including a plurality of strip-shaped metal plates, which extend outward from the cylindrical metal guide and are radially arranged to control the direction of a charged filament, whereby discharge droplets of the charged solution are stably maintained, and the charged filament formed therefrom maintains a constant directionality with respect to a substrate, so that a uniform pattern having ultrafine fibers can. be manufactured on a collection part.

2. 发明授权

US08361905B2 Methods of forming patterns for semiconductor devices 有权
标题翻译：形成半导体器件图形的方法
公开(公告)号：US08361905B2
公开(公告)日：2013-01-29
申请号：US12581298
申请日：2009-10-19
申请人： Bong-cheol Kim , Dae-youp Lee , Hyun-woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
发明人： Bong-cheol Kim , Dae-youp Lee , Hyun-woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/76229 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526
摘要： Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
摘要翻译：提供了形成半导体器件的图案的方法，由此可以同时形成具有各种宽度的图案，并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。在基板上形成双掩模层。在双掩模层上形成可变掩模层。在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模层。在第一区域中形成第一掩模图案和第一可变掩模图案，并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案，作为蚀刻掩模，第一光致抗蚀剂图案和第二光致抗蚀剂图案。形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。去除第一掩模图案，然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底，并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模第二区。

3. 发明申请

US20100240221A1 Methods of Forming Patterns for Semiconductor Devices 有权
标题翻译：半导体器件形成模式的方法
公开(公告)号：US20100240221A1
公开(公告)日：2010-09-23
申请号：US12581298
申请日：2009-10-19
申请人： Bong-cheol Kim , Dae-youp Lee , Hyun-Woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
发明人： Bong-cheol Kim , Dae-youp Lee , Hyun-Woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
IPC分类号： H01L21/306
CPC分类号： H01L21/76229 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526
摘要： Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
摘要翻译：提供了形成半导体器件的图案的方法，由此可以同时形成具有各种宽度的图案，并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。在基板上形成双掩模层。在双掩模层上形成可变掩模层。在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模层。在第一区域中形成第一掩模图案和第一可变掩模图案，并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案，作为蚀刻掩模，第一光致抗蚀剂图案和第二光致抗蚀剂图案。形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。去除第一掩模图案，然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底，并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模第二区。

4. 发明授权

US6153003A Process for preparing a homogeneous cellulose solution using N-methylmorpholine-N-oxide 有权
标题翻译：使用N-甲基吗啉-N-氧化物制备均匀的纤维素溶液的方法
公开(公告)号：US6153003A
公开(公告)日：2000-11-28
申请号：US147369
申请日：1999-02-10
申请人： Wha Seop Lee , Byoung Chul Kim , Seong Mu Jo , Jong Su Park , Seong Joo Lee , Young Geun Park , Seung Lak Lee , Young Se Oh
发明人： Wha Seop Lee , Byoung Chul Kim , Seong Mu Jo , Jong Su Park , Seong Joo Lee , Young Geun Park , Seung Lak Lee , Young Se Oh
IPC分类号： D01F2/02 , C08B1/00 , D01D1/02 , D01F2/00 , C08L1/02 , C09D101/02
CPC分类号： D01F2/00 , C08B1/003
摘要： A simple method of preparing a homogeneous cellulose solution is disclosed, which comprises the steps of (a) preparing fibrillar cellulose powder; (b) injecting a molten liquid tertiary amine oxide solvent into a twin screw extruder; (c) feeding the cellulose powder of step (a) into a section of the twin screw extruder where the molten liquid tertiary amine oxide solvent fed in step (b) produces a well swollen paste with the cellulose powder fed in step (c); (d) dissolving the well swollen cellulose paste in the following melting sections in the twin screw extruder; and (e) stabilizing the solution obtained in step (d) in a storage tank.
摘要翻译： PCT No.PCT / KR97 / 00104 Sec。 371日期1999年2月10日 102（e）1999年2月10日PCT 1997年6月5日PCT公布。公开号WO97 / 47790 日本1997年12月18日公开了一种制备均匀纤维素溶液的简单方法，其包括以下步骤：（a）制备纤维素纤维素粉末; （b）将熔融液态叔胺氧化物溶剂注入双螺杆挤出机中; （c）将步骤（a）的纤维素粉末进料到双螺杆挤出机的一部分，其中在步骤（b）中进料的熔融液体叔胺氧化物溶剂在步骤（c）中进料的纤维素粉末产生良好溶胀的糊状物; （d）在双螺杆挤出机中将溶胀好的纤维素糊溶解在以下熔融部分中; 和（e）将步骤（d）中获得的溶液稳定在储罐中。

5. 发明授权

US07351052B2 Apparatus for producing nanofiber utilizing electospinning and nozzle pack for the apparatus 有权
标题翻译：用于生产纳米纤维的装置，该设备利用电纺丝和喷嘴包装
公开(公告)号：US07351052B2
公开(公告)日：2008-04-01
申请号：US10523141
申请日：2003-07-16
申请人： Suk-Won Chun , Jong-Su Park
发明人： Suk-Won Chun , Jong-Su Park
IPC分类号： B29C35/08
CPC分类号： D01D5/0092 , D01D5/0069 , Y10S425/217
摘要： The apparatus for producing a nanofiber includes a supply unit (110) for supplying melted polymer for fiber material, a spinning unit (122) having several radiation nozzles (122) to which first voltage having a polar is applied to discharge the polymer solution supplied from the supply unit in a filament form, a collector (130) spaced apart form the spinning nozzles in order to pile the filament from the spinning unit and applied to second voltage having opposite polar to the first voltage, and a control unit (140) applied to the first voltage having the same polar as the charged filament and extended from an end of the spinning nozzle toward the collector at least at both sides of the spinning unit in order to prevent repulsion and dispersion of the filament stream radiated from each spinning nozzle.
摘要翻译：纳米纤维的制造装置包括用于供给纤维材料的熔融聚合物的供给单元（110），具有多个辐射喷嘴（122）的纺丝单元（122），第一电压具有极性，以排出由所述供应单元为长丝形式，从所述纺丝喷嘴间隔开的收集器（130），以将所述细丝从所述纺丝单元堆积并施加到具有与所述第一电压相反极性的第二电压，并且施加控制单元（140）至少与纺丝单元的两侧相比，具有与带电细丝相同的极性并从纺丝喷嘴的端部向收集器延伸的第一电压，以防止从每个纺丝喷嘴辐射的细丝流的排斥和分散。

6. 发明申请

US20230015841A1 NOZZLE BLOCK PROVIDED WITH NOZZLE CLOGGING PREVENTION MEANS, AND ELECTROSPINNING DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20230015841A1
公开(公告)日：2023-01-19
申请号：US17782839
申请日：2020-10-15
申请人： Jong-Su PARK
发明人： Jong-Su PARK , Woong HUH , Woong June HWANG , Yoon Chang LEE , Chun-su LEE
IPC分类号： D01D5/00 , B29C48/30 , B29C48/345 , B29C48/27 , B29C48/28 , B29C48/92 , B29C48/05 , B29C48/14 , B29C48/91 , B29C48/885
摘要： The present disclosure relates to a nozzle block applied to an electrospinning device, which includes a radiation nozzle having a hollow radiation needle for discharging a spinning solution to the outside; a means of piercing having a diameter smaller than that of the radiation needle, at least one of which is coaxially disposed inside the radiation needle; and a reciprocating mechanism for reciprocating the means of piercing and the radiation needle relative to each other, thereby preventing the solution from being solidified at the tip of the radiation nozzle or the radiation nozzle from being blocked by external contaminants even if the electrospinning process is temporarily interrupted in the middle.

7. 发明授权

US11458497B2 Coaxial control dual nozzle 有权
公开(公告)号：US11458497B2
公开(公告)日：2022-10-04
申请号：US16772436
申请日：2018-12-11
申请人： Jong-Su Park
发明人： Jong-Su Park , Woong Huh , Youn-Chang Lee , Woong-June Hwang
IPC分类号： B05B13/02 , B05B1/30 , B05B7/06 , B05B1/06 , B05B1/02 , B05B5/035
摘要： Disclosed is a coaxial control dual nozzle, which includes an inner nozzle body having an injection port through which a first fluid is injected; an inner needle connected to the inner nozzle body and having a hollow tube needle configured to provide a discharge port for the first fluid; an outer nozzle body assembled with the inner nozzle body and having an injection port through which a second fluid is injected; an outer needle connected to the outer nozzle body and disposed to surround the hollow tube needle provided to the inner needle, the outer needle having a hollow tube needle configured to provide a discharge port for the second fluid; an inner needle positioning unit configured to control a location of a central axis of the hollow tube needle provided to the inner needle; and an outer needle positioning unit configured to control a location of a central axis of the hollow tube needle provided to the outer needle.

8. 发明申请

US20170247796A1 METHOD OF MANUFACTURING NON-SLIP PLATE AND NON-SLIP PLATE MANUFACTURED THEREBY 审中-公开
公开(公告)号：US20170247796A1
公开(公告)日：2017-08-31
申请号：US15052979
申请日：2016-02-25
申请人： Jong-Su PARK , Jun PARK
发明人： Jong-Su PARK , Jun PARK
IPC分类号： C23C24/10 , B41M5/24
CPC分类号： C23C24/106 , B23K1/008 , B23K1/19 , B23K2103/18 , C22C27/04
摘要： Disclosed are a method of manufacturing a non-slip plate and a non-slip plate manufactured thereby. The method includes preparing a base metal plate for joint design, washing and surface treatment, preparing a non-slip material, adhering the non-slip material to the bonding surface of the base metal plate to form a protrusion, and brazing the base metal plate having the non-slip material adhered thereto in a brazing furnace. The non-slip plate is applied to vehicles to impart non-slip performance thereto, and can be semi-permanently used.

9. 发明申请

US20210069741A1 COAXIAL CONTROL DUAL NOZZLE 有权
公开(公告)号：US20210069741A1
公开(公告)日：2021-03-11
申请号：US16772436
申请日：2018-12-11
申请人： Jong-Su Park
发明人： Jong-Su Park , Woong Huh , Youn-Chang Lee , Woong-June Hwang
IPC分类号： B05B13/02 , B05B1/30
摘要： Disclosed is a coaxial control dual nozzle, which includes an inner nozzle body having an injection port through which a first fluid is injected; an inner needle connected to the inner nozzle body and having a hollow tube needle configured to provide a discharge port for the first fluid; an outer nozzle body assembled with the inner nozzle body and having an injection port through which a second fluid is injected; an outer needle connected to the outer nozzle body and disposed to surround the hollow tube needle provided to the inner needle, the outer needle having a hollow tube needle configured to provide a discharge port for the second fluid; an inner needle positioning unit configured to control a location of a central axis of the hollow tube needle provided to the inner needle; and an outer needle positioning unit configured to control a location of a central axis of the hollow tube needle provided to the outer needle.

10. 发明授权

US09945035B2 Method of manufacturing non-slip plate and non-slip plate manufactured thereby 有权
公开(公告)号：US09945035B2
公开(公告)日：2018-04-17
申请号：US15052979
申请日：2016-02-25
申请人： Jong-Su Park , Jun Park
发明人： Jong-Su Park , Jun Park
IPC分类号： B23K1/00 , C23C24/10 , B23K1/19 , C22C27/04 , B23K1/008 , B23K103/18
CPC分类号： C23C24/106 , B23K1/008 , B23K1/19 , B23K2103/18 , C22C27/04
摘要： Disclosed are a method of manufacturing a non-slip plate and a non-slip plate manufactured thereby. The method includes preparing a base metal plate for joint design, washing and surface treatment, preparing a non-slip material, adhering the non-slip material to the bonding surface of the base metal plate to form a protrusion, and brazing the base metal plate having the non-slip material adhered thereto in a brazing furnace. The non-slip plate is applied to vehicles to impart non-slip performance thereto, and can be semi-permanently used.

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