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    • 2. 发明授权
    • Methods of forming patterns for semiconductor devices
    • 形成半导体器件图形的方法
    • US08361905B2
    • 2013-01-29
    • US12581298
    • 2009-10-19
    • Bong-cheol KimDae-youp LeeHyun-woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • Bong-cheol KimDae-youp LeeHyun-woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • H01L21/302H01L21/461H01L21/311
    • H01L21/76229H01L21/0337H01L21/0338H01L21/3086H01L21/3088H01L21/32139H01L27/105H01L27/115H01L27/11519H01L27/11526
    • Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
    • 提供了形成半导体器件的图案的方法,由此可以同时形成具有各种宽度的图案,并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。 在基板上形成双掩模层。 在双掩模层上形成可变掩模层。 在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模 层。 在第一区域中形成第一掩模图案和第一可变掩模图案,并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案, 作为蚀刻掩模,第一光致抗蚀剂图案和第二光致抗蚀剂图案。 形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。 去除第一掩模图案,然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底,并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模 第二区。
    • 3. 发明申请
    • Methods of Forming Patterns for Semiconductor Devices
    • 半导体器件形成模式的方法
    • US20100240221A1
    • 2010-09-23
    • US12581298
    • 2009-10-19
    • Bong-cheol KimDae-youp LeeHyun-Woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • Bong-cheol KimDae-youp LeeHyun-Woo KimYoung-moon ChoiJong-su ParkByeong-hwan Son
    • H01L21/306
    • H01L21/76229H01L21/0337H01L21/0338H01L21/3086H01L21/3088H01L21/32139H01L27/105H01L27/115H01L27/11519H01L27/11526
    • Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
    • 提供了形成半导体器件的图案的方法,由此可以同时形成具有各种宽度的图案,并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。 在基板上形成双掩模层。 在双掩模层上形成可变掩模层。 在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模 层。 在第一区域中形成第一掩模图案和第一可变掩模图案,并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案, 作为蚀刻掩模,第一光致抗蚀剂图案和第二光致抗蚀剂图案。 形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。 去除第一掩模图案,然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底,并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模 第二区。
    • 6. 发明授权
    • Apparatus for producing nanofiber utilizing electospinning and nozzle pack for the apparatus
    • 用于生产纳米纤维的装置,该设备利用电纺丝和喷嘴包装
    • US07351052B2
    • 2008-04-01
    • US10523141
    • 2003-07-16
    • Suk-Won ChunJong-Su Park
    • Suk-Won ChunJong-Su Park
    • B29C35/08
    • D01D5/0092D01D5/0069Y10S425/217
    • The apparatus for producing a nanofiber includes a supply unit (110) for supplying melted polymer for fiber material, a spinning unit (122) having several radiation nozzles (122) to which first voltage having a polar is applied to discharge the polymer solution supplied from the supply unit in a filament form, a collector (130) spaced apart form the spinning nozzles in order to pile the filament from the spinning unit and applied to second voltage having opposite polar to the first voltage, and a control unit (140) applied to the first voltage having the same polar as the charged filament and extended from an end of the spinning nozzle toward the collector at least at both sides of the spinning unit in order to prevent repulsion and dispersion of the filament stream radiated from each spinning nozzle.
    • 纳米纤维的制造装置包括用于供给纤维材料的熔融聚合物的供给单元(110),具有多个辐射喷嘴(122)的纺丝单元(122),第一电压具有极性,以排出由 所述供应单元为长丝形式,从所述纺丝喷嘴间隔开的收集器(130),以将所述细丝从所述纺丝单元堆积并施加到具有与所述第一电压相反极性的第二电压,并且施加控制单元(140) 至少与纺丝单元的两侧相比,具有与带电细丝相同的极性并从纺丝喷嘴的端部向收集器延伸的第一电压,以防止从每个纺丝喷嘴辐射的细丝流的排斥和分散。