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1. 发明授权

US08361905B2 Methods of forming patterns for semiconductor devices 有权
标题翻译：形成半导体器件图形的方法
公开(公告)号：US08361905B2
公开(公告)日：2013-01-29
申请号：US12581298
申请日：2009-10-19
申请人： Bong-cheol Kim , Dae-youp Lee , Hyun-woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
发明人： Bong-cheol Kim , Dae-youp Lee , Hyun-woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/76229 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526
摘要： Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
摘要翻译：提供了形成半导体器件的图案的方法，由此可以同时形成具有各种宽度的图案，并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。在基板上形成双掩模层。在双掩模层上形成可变掩模层。在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模层。在第一区域中形成第一掩模图案和第一可变掩模图案，并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案，作为蚀刻掩模，第一光致抗蚀剂图案和第二光致抗蚀剂图案。形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。去除第一掩模图案，然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底，并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模第二区。

2. 发明授权

US08208831B2 Image forming cartridge mounting structure for image forming apparatus 有权
标题翻译：用于图像形成装置的成像盒安装结构
公开(公告)号：US08208831B2
公开(公告)日：2012-06-26
申请号：US12542875
申请日：2009-08-18
申请人： Hyun-woo Kim
发明人： Hyun-woo Kim
IPC分类号： G03G21/16
CPC分类号： G03G21/1853
摘要： An image forming apparatus that includes a main body housing formed with an opening, a main body frame coupled to the main body housing, an image forming cartridge mounted to the main body frame via the opening, and a cartridge supporting member which includes a supporting member main body formed integrally with the main body frame, and a supporting part formed in the supporting main body to elastically support the image forming cartridge with respect to the main body frame, so that the image forming cartridge can be mounted to the main body frame as the supporting member main body elastically moves to a cutting part formed in a part of the main body frame adjacent to the supporting member main body when the supporting part is pressed by the image forming cartridge.
摘要翻译：一种图像形成装置，包括形成有开口的主体壳体，连接到主体壳体的主体框架，经由开口安装到主体框架的图像形成盒;以及盒支撑构件，其包括支撑构件主体与主体框架一体地形成，并且支撑部形成在支撑主体中，以相对于主体框架弹性地支撑图像形成盒，使得图像形成盒可以安装到主体框架作为当支撑部件被图像形成盒按压时，支撑构件主体弹性移动到形成在主体框架的与支撑构件主体相邻的一部分中的切割部分。

3. 发明申请

US20120021355A1 COATING COMPOSITION FOR DUV FILTERING, METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE METHOD 有权
标题翻译：用于DUV过滤的涂料组合物，使用该方法形成光催化剂图案的方法和使用该方法制备半导体器件的方法
公开(公告)号：US20120021355A1
公开(公告)日：2012-01-26
申请号：US13188670
申请日：2011-07-22
申请人： Hyun-woo Kim , Hai-sub Na , Chil-hee Chung , Han-ku Cho
发明人： Hyun-woo Kim , Hai-sub Na , Chil-hee Chung , Han-ku Cho
IPC分类号： H01L21/311 , G03F7/039 , G03F7/26 , G02B5/22 , H01L21/02
CPC分类号： G03F7/0388 , G02B5/208 , G02B5/22 , G03F7/095 , G03F7/11
摘要： Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/μm or greater with respect to 193-nm incident light.
摘要翻译：提供了一种在极紫外（EUV）暴露期间用于深紫外（DUV）过滤的涂料组合物，该涂料组合物包括约100重量份的包含第一溶剂（第一溶剂为醇溶剂）的溶剂; 和约0.05重量份至约5重量份的相对于193纳米入射光的吸收度为约50％/μm或更大的涂层聚合物。

4. 发明授权

US07298931B2 Image retrieval method and apparatus using iterative matching 有权
标题翻译：使用迭代匹配的图像检索方法和装置
公开(公告)号：US07298931B2
公开(公告)日：2007-11-20
申请号：US10650964
申请日：2003-08-29
申请人： Hyun-woo Kim , Tae-kyun Kim , Won-jun Hwang , Seok-cheol Kee
发明人： Hyun-woo Kim , Tae-kyun Kim , Won-jun Hwang , Seok-cheol Kee
IPC分类号： G06K9/60
CPC分类号： G06F17/30247 , G06K9/6857
摘要： An image retrieval method and apparatus using iterative matching are provided. The method comprises: (a) extracting K similar images in order of matching rank by retrieving N reference images stored in an image database through comparison between a query image selected by a user and the reference images; and (b) performing iterative matching for M similar images, which are ranked higher and selected from the K similar images, with a predetermined frequency, and rearranging the matching ranks of the M similar images. According to the method and apparatus, among similar images retrieved by using a query image selected by a user, M similar images that are ranked higher are selected, and by performing iterative matching for the M similar images using the high-ranked similar image, M similar images are rearranged in order of similarity and output. Accordingly, accuracy of the matching can improve greatly and a load to the retrieval engine due to iterative retrieval can be minimized.
摘要翻译：提供了使用迭代匹配的图像检索方法和装置。该方法包括：（a）通过比较由用户选择的查询图像和参考图像，通过检索存储在图像数据库中的N个参考图像来提取匹配等级的K个相似图像; 和（b）以预定频率对从K个相似图像中排名较高并且选择的M个相似图像执行迭代匹配，并重新排列M个相似图像的匹配等级。根据该方法和装置，在通过使用用户选择的查询图像检索的相似图像中，选择M等级更高的相似图像，并且通过使用高排名相似图像对M个相似图像执行迭代匹配，M 类似的图像按照相似性和输出的顺序重新排列。因此，匹配的准确性可以大大提高，并且可以最小化由于迭代检索引起的对检索引擎的负担。

5. 发明授权

US07241552B2 Resist composition comprising photosensitive polymer having lactone in its backbone 失效
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US07241552B2
公开(公告)日：2007-07-10
申请号：US10909384
申请日：2004-08-03
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7/004
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要翻译：抗蚀剂组合物包括光致酸产生剂（PAG）和光敏聚合物。光敏聚合物与（a）至少一种具有以下各式的单体聚合：其中R 1和R 2独立地为氢原子，烷基，羟基烷基，烷氧基，羰基或酯，x和y独立地为1至 6，和（b）至少一种（甲基）丙烯酸酯单体，马来酸酐单体和降冰片烯单体。

6. 发明申请

US20060063384A1 Mask patterns for semiconductor device fabrication and related methods and structures 失效
标题翻译：半导体器件制造的掩模图案及相关方法和结构
公开(公告)号：US20060063384A1
公开(公告)日：2006-03-23
申请号：US11232703
申请日：2005-09-22
申请人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
发明人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
IPC分类号： G03F1/00 , H01L21/302
CPC分类号： H01L21/0274 , G03F7/405 , H01L21/0273 , H01L21/31144
摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.
摘要翻译：形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。还讨论了相关结构。

7. 发明申请

US20050008975A1 Resist composition comprising photosensitive polymer having lactone in its backbone 失效
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US20050008975A1
公开(公告)日：2005-01-13
申请号：US10909384
申请日：2004-08-03
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： C08F220/18 , C08F222/06 , C08F232/04 , C08F234/02 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/76
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要翻译：抗蚀剂组合物包括光致酸产生剂（PAG）和光敏聚合物。光敏聚合物与（a）至少一种具有以下各式的单体聚合：其中R 1和R 2独立地为氢原子，烷基，羟基烷基，烷氧基，羰基或酯，x和y独立地为1至 6，和（b）至少一种（甲基）丙烯酸酯单体，马来酸酐单体和降冰片烯单体。

8. 发明授权

US06787287B2 Photosensitive polymers and resist compositions comprising the photosensitive polymers 失效
标题翻译：包含光敏聚合物的光敏聚合物和抗蚀剂组合物
公开(公告)号：US06787287B2
公开(公告)日：2004-09-07
申请号：US10103756
申请日：2002-03-25
申请人： Hyun-woo Kim , Sang-gyun Woo , Yool Kang
发明人： Hyun-woo Kim , Sang-gyun Woo , Yool Kang
IPC分类号： G03F7075
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/106 , Y10S430/115
摘要： A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: where R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3; R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3; R3 is —H, —OH or —OCOCH3; R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.
摘要翻译：抗蚀剂组合物的光敏聚合物包括由下式表示的含硅烷基乙烯基醚和马来酸酐的共聚物：其中R1是-H，-OSi（CH3）2C（CH3）3或-OSi（CH3）3; R2是-H，-OH，-OCOCH3，-OSi（CH3）2C（CH3）3或-OSi（CH（CH3）2）3; R3是-H，-OH或-OCOCH3; R4是-H，-OSi（CH3）2C（CH3）3，-CH2OSi（CH3）2C（CH3）3或-CH2OSi（CH（CH3）2）3; R 1，R 2，R 3和R 4中的至少一个为含Si基团。

9. 发明授权

US07985529B2 Mask patterns including gel layers for semiconductor device fabrication 有权
标题翻译：掩模图案包括用于半导体器件制造的凝胶层
公开(公告)号：US07985529B2
公开(公告)日：2011-07-26
申请号：US12496185
申请日：2009-07-01
申请人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
发明人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
IPC分类号： G03F7/11
CPC分类号： G03F7/40 , G03F7/023 , G03F7/0382 , G03F7/0392
摘要： Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.
摘要翻译：掩模图案包括抗蚀剂图案和抗蚀剂图案表面上的凝胶层，其具有包含质子供体聚合物和质子受体聚合物之间的氢键的连接点。还提供了形成掩模图案的方法和使用掩模图案制造半导体器件作为蚀刻掩模的方法。

10. 发明授权

US07855038B2 Mask patterns for semiconductor device fabrication and related methods and structures 失效
标题翻译：半导体器件制造的掩模图案及相关方法和结构
公开(公告)号：US07855038B2
公开(公告)日：2010-12-21
申请号：US12042625
申请日：2008-03-05
申请人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
发明人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
IPC分类号： G03F9/00
CPC分类号： H01L21/0274 , G03F7/405 , H01L21/0273 , H01L21/31144
摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.
摘要翻译：形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。还讨论了相关结构。

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