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1. 发明授权

US07643507B2 Multicast packet processing apparatus and method 有权
标题翻译：组播分组处理装置及方法
公开(公告)号：US07643507B2
公开(公告)日：2010-01-05
申请号：US11329111
申请日：2006-01-11
申请人： Bong-Cheol Kim , Byung-Chang Kang , Yong-Seok Park
发明人： Bong-Cheol Kim , Byung-Chang Kang , Yong-Seok Park
IPC分类号： H04J3/26
CPC分类号： H04L49/201 , H04L47/50
摘要： A multicast packet forwarding apparatus and method that can combine an internal processor of a multicast packet processor into a forwarding unit and a packet duplicator in order to minimize delay in the processing time of a forwarder and a packet transmitter. In the apparatus, a packet receiver is adapted to receive unicast and multicast packets. A forwarding unit has a unicast forwarder for forwarding a unicast packet to a destination when the packet receiver receives the unicast packet, and a multicast forwarder for multicasting a multicast packet to respective output interfaces when the packet receiver receives the multicast packet. A packet duplicator is adapted to convert the multicast packet output from the multicast forwarder into a several unicast packets. A packet dispatcher is adapted to reintroduce the unicast packets converted by the packet duplicator to the forwarding unit again. A scheduler serves to port-schedule packets output via the forwarding unit and duplicated packets according to a scheduling policy.
摘要翻译：一种组播分组转发装置和方法，其可以将多播分组处理器的内部处理器组合到转发单元和分组复制器中，以便最小化转发器和分组发送器的处理时间的延迟。在该装置中，分组接收机适于接收单播和多播分组。转发单元具有单播转发器，用于当分组接收机接收到单播分组时将单播分组转发到目的地;以及组播转发器，用于在分组接收机接收到多播分组时将组播分组多播到各个输出接口。分组复制器适于将从多播转发器输出的组播分组转换为多个单播分组。分组分配器适于将由分组复制器转换的单播分组重新引入转发单元。调度器用于根据调度策略对经由转发单元输出的分组和复制分组进行端口调度。

2. 发明授权

US07509394B2 Method for controlling flow of radius protocol 有权
标题翻译：控制半径协议流的方法
公开(公告)号：US07509394B2
公开(公告)日：2009-03-24
申请号：US10352905
申请日：2003-01-29
申请人： Bong-Cheol Kim
发明人： Bong-Cheol Kim
IPC分类号： G06F17/60
CPC分类号： G06Q20/401 , H04L63/08 , H04L63/0892 , H04L67/1002 , H04L67/1008 , H04L67/1012 , H04L67/1017 , H04L67/1023 , H04L67/1036 , H04L67/1038
摘要： A method for controlling a flow of a RADIUS (Remote Authentication Dial-In User Service) protocol, where the method allows a plurality of RADIUS servers to share a load in a RADIUS system in which a RADIUS client of the RADIUS system can swiftly receive a response message from a RADIUS server being responsive to a request message from the RADIUS client. The method includes the steps of allowing a RADIUS server to transmit a notification message to a RADIUS client on the basis of a packet format in the RADIUS protocol, the notification message having information relating to an available or unavailable state of the RADIUS server, and allowing the RADIUS client to check the available or unavailable state of the RADIUS server from the notification message received from the RADIUS server.
摘要翻译：一种用于控制RADIUS（远程认证拨入用户服务）协议流的方法，其中该方法允许多个RADIUS服务器在其中RADIUS系统的RADIUS客户端可以迅速接收到的RADIUS系统中共享负载来自RADIUS服务器的响应消息响应于来自RADIUS客户端的请求消息。该方法包括以下步骤：允许RADIUS服务器根据RADIUS协议中的报文格式向RADIUS客户端发送通知消息，该通知消息具有与RADIUS服务器的可用或不可用状态相关的信息，并允许 RADIUS客户端从RADIUS服务器收到的通知消息中检查RADIUS服务器的可用或不可用状态。

3. 发明授权

US07449383B2 Method of manufacturing a capacitor and method of manufacturing a dynamic random access memory device using the same 有权
公开(公告)号：US07449383B2
公开(公告)日：2008-11-11
申请号：US11898667
申请日：2007-09-14
申请人： Kwang-Sub Yoon , Jung-Hyeon Lee , Bong-Cheol Kim , Se-Young Park
发明人： Kwang-Sub Yoon , Jung-Hyeon Lee , Bong-Cheol Kim , Se-Young Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.

4. 发明申请

US20050157723A1 Controlling traffic congestion 有权
标题翻译：控制交通拥堵
公开(公告)号：US20050157723A1
公开(公告)日：2005-07-21
申请号：US11009713
申请日：2004-12-13
申请人： Bong-Cheol Kim , Byung-Gu Choe , Yong-Seok Park
发明人： Bong-Cheol Kim , Byung-Gu Choe , Yong-Seok Park
IPC分类号： H04L12/26 , H04L12/28 , H04L12/56
CPC分类号： H04L47/10 , H04L47/215
摘要： An apparatus for controlling traffic congestion includes: a transmitting processor including a packet classifying unit adapted to classify packets to be processed in a receiving processor and packets to be forwarded via the transmitting processor, the transmitting processor and the receiving processor having different traffic processing speeds; a buffer adapted to store the packets to be forwarded from the packet classifying unit to the receiving processor; and the receiving processor including a token driver adapted to output the packets stored in the buffer in accordance with a token bucket algorithm in response to an interrupt signal of the transmitting processor and to transmit the packets to a corresponding application, and a monitoring unit adapted to analyze and monitor a resource occupancy rate and a traffic characteristic used by the token driver to set an amount of tokens.
摘要翻译：一种用于控制交通拥堵的装置，包括：发送处理器，包括：分组分类单元，用于对在接收处理器中要处理的分组进行分类;以及分组，经由所述发送处理器转发;所述发送处理器和所述接收处理器具有不同的业务处理速度; 缓冲器，用于存储要从分组分类单元转发到接收处理器的分组; 并且所述接收处理器包括令牌驱动器，所述令牌驱动器适于响应于所述发送处理器的中断信号，根据令牌桶算法输出存储在所述缓冲器中的数据包，并将所述数据包发送到对应的应用，以及监视单元，分析和监视令牌驱动程序使用的资源占用率和流量特性来设置令牌数量。

5. 发明申请

US20190047467A1 VEHICLE EMERGENCY SAFETY DEVICE USING SELFIE STICK 审中-公开
公开(公告)号：US20190047467A1
公开(公告)日：2019-02-14
申请号：US16166079
申请日：2018-10-20
申请人： Bong Cheol KIM
发明人： Kyung-Min KIM
IPC分类号： B60Q1/26 , B60Q7/00
CPC分类号： B60Q1/2657 , B60Q1/52 , B60Q7/00 , E01F9/615 , E01F9/662 , F16M13/02 , G03B17/561 , G03B17/563
摘要： The present invention relates to a vehicle emergency safety device using a selfie stick, the device comprising: a support which comprises a plurality of poles with different diameters, including first, second, third, and fourth poles, wherein the poles are successively nested in the first pole with the largest diameter and withdrawn therefrom up to a desired length in a telescopic manner; two fixing brackets installed in the lower portion of the support; a joint part installed in the upper portion of the support; a cradle which is installed in the upper portion of the joint part and can be rotated 360 degrees by a second adjusting screw; and a flashing light inserted into and fixed to the cradle.

6. 发明授权

US08361905B2 Methods of forming patterns for semiconductor devices 有权
标题翻译：形成半导体器件图形的方法
公开(公告)号：US08361905B2
公开(公告)日：2013-01-29
申请号：US12581298
申请日：2009-10-19
申请人： Bong-cheol Kim , Dae-youp Lee , Hyun-woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
发明人： Bong-cheol Kim , Dae-youp Lee , Hyun-woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/76229 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526
摘要： Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
摘要翻译：提供了形成半导体器件的图案的方法，由此可以同时形成具有各种宽度的图案，并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。在基板上形成双掩模层。在双掩模层上形成可变掩模层。在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模层。在第一区域中形成第一掩模图案和第一可变掩模图案，并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案，作为蚀刻掩模，第一光致抗蚀剂图案和第二光致抗蚀剂图案。形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。去除第一掩模图案，然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底，并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模第二区。

7. 发明申请

US20100310687A1 ANTI-GASTRITIS AND ANTI-ULCER AGENT CONTAINING MOMORDICAE SEMEN EXTRACT AND MOMORDICA SAPONIN I ISOLATED FROM THE SAME 有权
标题翻译：含有MOMORDICAE SEMEN萃取物的抗牙釉质抗微生物剂及其分离的MOMORDICA SAPONIN I
公开(公告)号：US20100310687A1
公开(公告)日：2010-12-09
申请号：US12857035
申请日：2010-08-16
申请人： Bong Cheol KIM , Joo Hyon Kim , Se Jun Yun , Eun Jung Noh , Gi Uk Jang , Chang-Kyun Han , Yong-Baik Cho , Wie-Jong Kwak
发明人： Bong Cheol KIM , Joo Hyon Kim , Se Jun Yun , Eun Jung Noh , Gi Uk Jang , Chang-Kyun Han , Yong-Baik Cho , Wie-Jong Kwak
IPC分类号： A61K36/42 , A61K31/704 , A61P1/04
CPC分类号： A61K31/70
摘要： The present invention relates to a Momordicae semen extract effective in the prevention and treatment of gastritis or gastric ulcer and momordica saponin I isolated therefrom. The Momordicae semen extract and the momordica saponin I isolated therefrom is effective in the prevention and treatment of gastritis or gastric ulcer since they prevent the damage of the gastric mucosa caused by alcohols and inhibit the secretion of gastric acid.
摘要翻译：本发明涉及一种有效预防和治疗从其分离的胃炎或胃溃疡和苦瓜皂苷Ⅰ的苦瓜精液提取物。从其中分离出的苦瓜精液提取物和苦瓜皂苷Ⅰ可有效预防和治疗胃炎或胃溃疡，因为它们可防止由酒精引起的胃粘膜损伤，并抑制胃酸分泌。

8. 发明申请

US20100240221A1 Methods of Forming Patterns for Semiconductor Devices 有权
标题翻译：半导体器件形成模式的方法
公开(公告)号：US20100240221A1
公开(公告)日：2010-09-23
申请号：US12581298
申请日：2009-10-19
申请人： Bong-cheol Kim , Dae-youp Lee , Hyun-Woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
发明人： Bong-cheol Kim , Dae-youp Lee , Hyun-Woo Kim , Young-moon Choi , Jong-su Park , Byeong-hwan Son
IPC分类号： H01L21/306
CPC分类号： H01L21/76229 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526
摘要： Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region.
摘要翻译：提供了形成半导体器件的图案的方法，由此可以同时形成具有各种宽度的图案，并且在半导体器件的一部分中通过双重图案化工艺可以使图案密度加倍。在基板上形成双掩模层。在双掩模层上形成可变掩模层。在第一区域中具有第一厚度和第一宽度的第一光致抗蚀剂图案和具有大于第一厚度的第二厚度的第二光致抗蚀剂图案和宽于第二区域中的第一宽度的第二宽度形成在可变掩模层。在第一区域中形成第一掩模图案和第一可变掩模图案，并且通过使用可变掩模层和双掩模层依次蚀刻第二区域中的第二掩模图案和第二可变掩模图案，作为蚀刻掩模，第一光致抗蚀剂图案和第二光致抗蚀剂图案。形成覆盖第一掩模图案的侧壁的第一间隔物和覆盖第二掩模图案的侧壁的第二间隔物。去除第一掩模图案，然后通过在第一区域中使用第一间隔物作为蚀刻掩模在第一区域和第二区域中蚀刻衬底，并且在第二区域中将第二掩模图案和第二间隔物作为蚀刻掩模第二区。

9. 发明申请

US20100190968A1 OLEANANE TRITERPENE SAPONIN COMPOUNDS WHICH ARE EFFECTIVE ON TREATMENT OF DEMENTIA AND MILD COGNITIVE IMPAIRMENT (MCI) AND IMPROVEMENT OF COGNITIVE FUNCTION 审中-公开
标题翻译： OLEANANE TRITERPENE SAPONIN化合物，其有效治疗DEMENTIA和MILD认知障碍（MCI）和改善认知功能
公开(公告)号：US20100190968A1
公开(公告)日：2010-07-29
申请号：US12446523
申请日：2006-10-24
申请人： Bong Cheol Kim , Wonrack Choi , Soo Min Lee , Se Jun Yun , Chang-Kyun Han , Guang-Jin Im , Wie-Jong Kwak
发明人： Bong Cheol Kim , Wonrack Choi , Soo Min Lee , Se Jun Yun , Chang-Kyun Han , Guang-Jin Im , Wie-Jong Kwak
IPC分类号： C07H15/256
CPC分类号： A61K31/015
摘要： The present invention relates to the use of oleanane-type triterpene saponin compounds, which are effective for improving memory and learning ability, as an effective ingredient of drugs for the treatment and prevention of dementia and mild cognitive impairment and health foods for the improvement of brain functions including cognitive function.
摘要翻译：本发明涉及作为治疗和预防痴呆和轻度认知障碍的药物的有效成分和用于改善脑的健康食品的有利于提高记忆力和学习能力的油酸型三萜皂苷化合物的用途功能包括认知功能。

10. 发明申请

US20100178599A1 Photomask Used in Fabrication of Semiconductor Device 失效
标题翻译：用于制造半导体器件的光掩模
公开(公告)号：US20100178599A1
公开(公告)日：2010-07-15
申请号：US12686464
申请日：2010-01-13
申请人： Bong-Cheol Kim , Dae-Youp Lee , Jae-Han Lee , Eun-Sung Kim , Byeong-Hwan Son
发明人： Bong-Cheol Kim , Dae-Youp Lee , Jae-Han Lee , Eun-Sung Kim , Byeong-Hwan Son
IPC分类号： G03F1/00
CPC分类号： G03F1/70
摘要： Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.
摘要翻译：提供了用于制造半导体器件的光掩模。光掩模包括要转印到具有台阶差的半导体衬底上的第一和第二区域。第一和第二区域具有掩模图案。第一区域的掩模图案具有与第二区域的掩模图案不同的形状。第二区域的掩模图案具有设置在其相对侧面部分中的凹凸部分。

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