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1. 发明授权

US5786605A Semiconductor device produced by a single furnace cycle diffusion and oxidation process 失效
标题翻译：半导体器件通过单炉炉循环扩散和氧化工艺生产
公开(公告)号：US5786605A
公开(公告)日：1998-07-28
申请号：US907264
申请日：1997-08-06
申请人： Jon A. Gwin
发明人： Jon A. Gwin
IPC分类号： B01L1/00 , C30B31/06 , H01L21/225 , H01L21/31
CPC分类号： H01L21/2255 , C30B31/06 , Y10S148/03 , Y10S148/035
摘要： A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then ramped-up and the dopant is diffused into the wafer in an inert ambient. The temperature is then ramped-up again and oxygen is introduced to produce an oxide layer. The wafers are then removed from the furnace and any residue of the dopant within the chamber is effectively neutralized by introducing a high flow of oxygen.
摘要翻译：使用单炉循环的半导体沉积和氧化工艺。在较低温度下引入掺杂剂之前，温度和气体混合物在炉内稳定。然后，室的温度升高，并且掺杂剂在惰性环境中扩散到晶片中。然后将温度再次升高并引入氧气以产生氧化物层。然后从炉中取出晶片，并通过引入高流量的氧来有效地中和室内的掺杂剂的任何残余物。

2. 发明授权

US5372649A Apparatus for weighting a diffusion furnace cantilever 失效
标题翻译：用于对扩散炉悬臂加权的装置
公开(公告)号：US5372649A
公开(公告)日：1994-12-13
申请号：US113521
申请日：1993-08-30
申请人： Jon A. Gwin
发明人： Jon A. Gwin
IPC分类号： H01L21/677 , B05C13/02
CPC分类号： H01L21/67754 , H01L21/67712 , H01L21/6776 , Y10S118/90
摘要： Apparatus for counterweighting a diffusion furnace cantilever arm for processing silicon wafers which has conventional slotted quartz boats for receiving silicon wafers wherein certain substitutes for said conventional quartz boats are constructed so as to be dummy loads which have the weight and dimensions of a filled quartz boat, but in which no silicon wafers are mounted. Other quartz boats have slots for a particular number of silicon wafers, but the remaining portion of the boat does not receive any wafers, and the boat has the weight and dimensions equivalent to a filled quartz boat. By combining the various boats on the cantilever arm a standard weight can be obtained.
摘要翻译：用于对称加权用于处理硅晶片的扩散炉悬臂的装置，其具有用于接收硅晶片的常规开槽石英舟，其中用于所述常规石英舟的某些替代物被构造成具有填充的石英舟的重量和尺寸的虚拟负载，但是其中没有安装硅晶片。其他石英舟具有用于特定数量的硅晶片的槽，但是船的剩余部分不接收任何晶片，并且船的重量和尺寸等同于填充的石英舟。通过组合悬臂上的各种船，可以获得标准重量。

3. 发明授权

US5494852A High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle 失效
标题翻译：使用单炉循环的大容量半导体掺杂剂沉积/氧化过程
公开(公告)号：US5494852A
公开(公告)日：1996-02-27
申请号：US98667
申请日：1993-07-28
申请人： Jon A. Gwin
发明人： Jon A. Gwin
IPC分类号： B01L1/00 , C30B31/06 , H01L21/225 , H01L21/31 , H01L21/385
CPC分类号： H01L21/2255 , C30B31/06 , Y10S148/03 , Y10S148/035
摘要： A semiconductor deposition and oxidation process using a single furnace cycle. The temperature and gas mixture is stabilized inside the furnace prior to introduction of a dopant at a relatively low temperature. The temperature of the chamber is then ramped-up and the dopant is diffused into the wafer in an inert ambient. The temperature is then ramped-up again and oxygen is introduced to produce an oxide layer. The wafers are then removed from the furnace and any residue of the dopant within the chamber is effectively neutralized by introducing a high flow of oxygen.
摘要翻译：使用单炉循环的半导体沉积和氧化工艺。在较低温度下引入掺杂剂之前，温度和气体混合物在炉内稳定。然后，室的温度升高，并且掺杂剂在惰性环境中扩散到晶片中。然后将温度再次升高并引入氧气以产生氧化物层。然后从炉中取出晶片，并通过引入高流量的氧来有效地中和室内的掺杂剂的任何残余物。

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