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1. 发明授权

US5573592A Method for forming pure group III-V compound semi-conductor films 失效
标题翻译：纯III-V族复合半导体薄膜的制备方法
公开(公告)号：US5573592A
公开(公告)日：1996-11-12
申请号：US361838
申请日：1994-12-22
申请人： Andreas H ubner , Scott R. Lucas , William D. Partlow , W. J. Choyke , J. A. Sch afer , John T. Yates, Jr.
发明人： Andreas H ubner , Scott R. Lucas , William D. Partlow , W. J. Choyke , J. A. Sch afer , John T. Yates, Jr.
IPC分类号： C30B25/02 , C30B25/20
CPC分类号： C30B25/02 , C30B29/40 , C30B29/406
摘要： This invention discloses a method of synthesizing a Group III-V compound semi-conducting film from a Group III metal alkyl and Group V hydride wherein the method comprises providing a vacuum chamber in which the synthesis takes place, adsorbing at least one monolayer of said Group III metal alkyl on an inert surface, backfilling the chamber with a Group V hydride, adsorbing the Group V hydride on the inert surface, providing atomic hydrogen atoms from electron-induced dissociation of Group V hydride adsorbed on the surface, inducing an electron-induced depletion of carbon at a rate which is dependent on the pressure of the Groups V hydride, retaining substantially all Group III metal on the surface and providing a thermally stable Group III-V compound semi-conducting film on the inert SiO.sub.2 surface. Methods for synthesizing a multilayer Group III-V semi-conducting film and specifically a GaN film are also disclosed, along with the apparatus for the synthesis of Group III-V compound semi-conducting films.
摘要翻译：本发明公开了一种由III族金属烷基和V族氢化物合成III-V族化合物半导电膜的方法，其中所述方法包括提供其中发生合成的真空室，吸附所述组的至少一个单层 III族金属烷基在惰性表面上，用V族氢化物回填室，将V族氢化物吸附在惰性表面上，从吸附在表面上的V族氢化物的电子诱导解离提供原子氢原子，诱导电子诱导以取决于V族氢化物的压力的速率消耗碳，并在表面上保留基本上所有的III族金属，并在惰性SiO 2表面上提供热稳定的III-V族化合物半导电膜。还公开了用于合成III-V族化合物半导体膜的多层III-V族半导体膜，特别是GaN膜的方法。

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