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1. 发明授权

US07753095B2 Storing and handling liquid reagents 失效
标题翻译：储存和处理液体试剂
公开(公告)号：US07753095B2
公开(公告)日：2010-07-13
申请号：US11640000
申请日：2006-12-15
申请人： Sepehr Kiani , John Kepler
发明人： Sepehr Kiani , John Kepler
IPC分类号： B65B1/04
CPC分类号： G01N35/1002 , B01L3/5027 , G01N35/1079
摘要： A liquid storage apparatus provides a safe and easy to use device for efficiently managing liquid reagents used in a variety of laboratory equipment. The liquid storage apparatus helps reduce the likelihood of accidental sticks to laboratory personnel, allows for flexibility of experimental design, and helps maximize the use of chemical regents to prevent waste. The apparatus includes a plurality of containers of liquid with a pierceable septum interface at each end. The apparatus also includes a lower array of needles with each of the lower needles in the lower array of needles arranged to penetrate the bottom pierceable septum of a different one of the containers. Each of the needles includes a passage so the liquid can flow out of the pierced container. The apparatus further includes an upper array of needles with each of the upper needles in the upper array of needles arranged to penetrate the top pierceable septum of a different one of the containers. Each of the needles include a passage so gas can flow into the pierced container to occupy the space created as the liquid flows out of the container.
摘要翻译：液体储存装置提供了一种安全且易于使用的装置，用于有效地管理各种实验室设备中使用的液体试剂。液体储存装置有助于减少意外粘在实验室人员上的可能性，允许实验设计的灵活性，并有助于最大限度地利用化学试剂来防止浪费。该装置包括多个液体容器，每个容器在每个端部具有可穿透的隔膜接口。该装置还包括下排的针，针的下排列中的每个下针被布置成穿透不同容器的底部可刺破的隔膜。每个针都包括通道，使得液体可以从穿孔的容器中流出。所述装置还包括上排列的针，上针中的每个针布置成穿过不同容器的顶部可刺破的隔膜。每个针包括通道，使得气体可以流入刺穿的容器以占据当液体流出容器时产生的空间。

2. 发明申请

US20110092473A1 ANDROSTANE AND PREGNANE STEROIDS WITH POTENT ALLOSTERIC GABA RECEPTOR CHLORIDE IONOPHORE MODULATING PROPERTIES 有权
标题翻译：安非他酮和前列腺素与耐药性GABA受体氯离子离子调节特性
公开(公告)号：US20110092473A1
公开(公告)日：2011-04-21
申请号：US12664470
申请日：2008-06-16
申请人： Scott P. Runyon , Michael Rogawski , Edgar Cook , Kevin M. Cook , John Kepler , Hernan Navarro , Rafal Kaminski , Matthew Orr
发明人： Scott P. Runyon , Michael Rogawski , Edgar Cook , Kevin M. Cook , John Kepler , Hernan Navarro , Rafal Kaminski , Matthew Orr
IPC分类号： A61K31/565 , C07J41/00 , C07J31/00 , C07J7/00 , A61P25/24 , A61P25/32 , A61P25/30 , A61P25/22 , A61P25/28 , A61P25/00
CPC分类号： C07J41/0005 , C07J7/00 , C07J31/003
摘要： This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.
摘要翻译：本发明描述了结构1,2和3的化合物及其作为GABA受体氯离子载体复合物的变构调节剂的用途，以缓解压力，焦虑，情绪障碍，癫痫发作，抑郁症，药物和酒精滥用的治疗，记忆，经前期障碍，和神经系统损伤。

3. 发明授权

US07737021B1 Resist trim process to define small openings in dielectric layers 有权
标题翻译：抵抗修整过程以限定电介质层中的小开口
公开(公告)号：US07737021B1
公开(公告)日：2010-06-15
申请号：US10261613
申请日：2002-09-30
申请人： Srikanteswara Dakshina-Murthy , Paul R. Besser , Jonathan B. Smith , Eric M. Apelgren , Christian Zistl , Jeremy I. Martin , Lie Larry Zhao , Nicholas John Kepler
发明人： Srikanteswara Dakshina-Murthy , Paul R. Besser , Jonathan B. Smith , Eric M. Apelgren , Christian Zistl , Jeremy I. Martin , Lie Larry Zhao , Nicholas John Kepler
IPC分类号： H01L21/4763
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.
摘要翻译：本发明涉及一种形成半导体器件的方法。在一个说明性实施例中，该方法包括在形成在电介质材料层上方的光致抗蚀剂层中限定具有第一尺寸的光致抗蚀剂特征。该方法还包括减小光致抗蚀剂特征的第一尺寸以产生减小尺寸的光致抗蚀剂特征，在减小尺寸的光致抗蚀剂特征下的电介质材料层中形成开口，以及在电介质材料层中的开口中形成导电材料。

4. 发明授权

US06500755B2 Resist trim process to define small openings in dielectric layers 有权
标题翻译：抵抗修整过程以限定电介质层中的小开口
公开(公告)号：US06500755B2
公开(公告)日：2002-12-31
申请号：US09731577
申请日：2000-12-06
申请人： Srikanteswara Dakshina-Murthy , Paul R. Besser , Jonathan B. Smith , Eric M. Apelgren , Christian Zistl , Jeremy I. Martin , Lie Larry Zhao , Nicholas John Kepler
发明人： Srikanteswara Dakshina-Murthy , Paul R. Besser , Jonathan B. Smith , Eric M. Apelgren , Christian Zistl , Jeremy I. Martin , Lie Larry Zhao , Nicholas John Kepler
IPC分类号： H01L214763
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.
摘要翻译：本发明涉及一种形成半导体器件的方法。在一个说明性实施例中，该方法包括在形成在电介质材料层上方的光致抗蚀剂层中限定具有第一尺寸的光致抗蚀剂特征。该方法还包括减小光致抗蚀剂特征的第一尺寸以产生减小尺寸的光致抗蚀剂特征，在减小尺寸的光致抗蚀剂特征下的电介质材料层中形成开口，以及在电介质材料层中的开口中形成导电材料。

5. 发明授权

US5844836A Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell 失效
标题翻译：具有通过局部互连到栅极电容器的电容增加的存储单元和用于制造这种单元的方法
公开(公告)号：US5844836A
公开(公告)日：1998-12-01
申请号：US822518
申请日：1997-03-24
申请人： Nicholas John Kepler , Asim A. Selcuk , Richard K. Klein , Craig S. Sander , John C. Holst , Christopher A. Spence , Raymond T. Lee , Stephen C. Horne
发明人： Nicholas John Kepler , Asim A. Selcuk , Richard K. Klein , Craig S. Sander , John C. Holst , Christopher A. Spence , Raymond T. Lee , Stephen C. Horne
IPC分类号： G11C11/412 , H01L21/8244 , H01L27/11 , G11C11/00
CPC分类号： H01L27/11 , G11C11/412 , H01L27/1104
摘要： A static random access memory (SRAM) cell having increased cell capacitance at the storage nodes utilizes a capacitive structure. The capacitive structure includes a dielectric material between polysilicon conductive lines and tungsten local interconnects. The polysilicon plates are each connected to drains of lateral transistors associated with the SRAM cell. A dielectric material such as silicon dioxide may be deposited between the local interconnect and polysilicon conductive lines. The capacitor structures are provided between first and second N-channel pull down transistors associated with the SRAM cell.
摘要翻译：在存储节点处具有增加的单元电容的静态随机存取存储器（SRAM）单元利用电容结构。电容结构包括多晶硅导电线与钨局部互连之间的电介质材料。多晶硅板各自连接到与SRAM单元相关联的横向晶体管的漏极。可以在局部互连和多晶硅导电线之间沉积诸如二氧化硅的电介质材料。电容器结构设置在与SRAM单元相关联的第一和第二N沟道下拉晶体管之间。

6. 发明授权

US5796651A Memory device using a reduced word line voltage during read operations and a method of accessing such a memory device 失效
标题翻译：在读取操作期间使用减少的字线电压的存储器件以及访问这种存储器件的方法
公开(公告)号：US5796651A
公开(公告)日：1998-08-18
申请号：US858589
申请日：1997-05-19
申请人： Stephen C. Horne , Richard K. Klein , Asim A. Selcuk , Nicholas John Kepler , Christopher A. Spence , Raymond T. Lee , John C. Holst
发明人： Stephen C. Horne , Richard K. Klein , Asim A. Selcuk , Nicholas John Kepler , Christopher A. Spence , Raymond T. Lee , John C. Holst
IPC分类号： G11C8/08 , G11C11/418 , G11C11/419
CPC分类号： G11C11/418 , G11C8/08
摘要： A memory device uses a reduced word line voltage during READ operations. The memory device includes a memory cell and a pass transistor for accessing the cell. The cell includes a storage node coupled to a pull-down transistor having substantially the same conductivity as the pass transistor. A drive circuit generates a reduced word line voltage to activate the pass transistor during a READ operation. The reduced word line voltage has a magnitude less than the magnitude of the bias voltage used to activate the pull-down transistor.
摘要翻译：存储器件在读取操作期间使用减少的字线电压。存储器件包括存储单元和用于访问单元的通过晶体管。该单元包括耦合到具有与传输晶体管基本相同的导电性的下拉晶体管的存储节点。驱动电路在读取操作期间产生降低的字线电压以激活传输晶体管。减小的字线电压具有小于用于激活下拉晶体管的偏置电压的幅度的幅度。

7. 发明授权

US08575375B2 Androstane and pregnane steroids with potent allosteric GABA receptor chloride ionophore modulating properties 有权
标题翻译：具有强效变构GABA受体氯离子载体调节性质的雄甾烷和孕甾类固醇
公开(公告)号：US08575375B2
公开(公告)日：2013-11-05
申请号：US12664470
申请日：2008-06-16
申请人： Scott P. Runyon , Michael A. Rogawski , John Kepler , Hernan Navarro , Rafal Kaminski , Matthew Orr , Kevin M. Cook
发明人： Scott P. Runyon , Michael A. Rogawski , Edgar Cook , John Kepler , Hernan Navarro , Rafal Kaminski , Matthew Orr
IPC分类号： C07J41/00
CPC分类号： C07J41/0005 , C07J7/00 , C07J31/003
摘要： This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.
摘要翻译：本发明描述了结构1,2和3的化合物及其作为GABA受体氯离子载体复合物的变构调节剂的用途，以缓解压力，焦虑，情绪障碍，癫痫发作，抑郁症，药物和酒精滥用的治疗，记忆，经前期障碍，和神经系统损伤。

8. 发明申请

US20090249949A1 METHODS AND DEVICES FOR BUBBLE MITIGATION 审中-公开
标题翻译：泡沫减轻的方法和装置
公开(公告)号：US20090249949A1
公开(公告)日：2009-10-08
申请号：US12397870
申请日：2009-03-04
申请人： John Kepler , Alexander Watson
发明人： John Kepler , Alexander Watson
IPC分类号： B01D19/02 , B01D53/22
CPC分类号： B01D19/0031 , B01D19/0036 , B01D19/0042 , B01L3/502723 , B01L3/561
摘要： The invention relates to methods, systems and devices for mitigation of bubbles in a micro-fluidic environment. For example, the invention relates to methods, systems and devices for mitigation of bubbles from reagents, solvents, formulations and for improving chemical reactions in micro-fluidic systems, such as for fluorescence detection and polynucleotide sequencing.
摘要翻译：本发明涉及在微流体环境中缓解气泡的方法，系统和装置。例如，本发明涉及用于从试剂，溶剂，制剂中缓解气泡并改善微流体系统中的化学反应的方法，系统和装置，例如用于荧光检测和多核苷酸测序。

9. 发明申请

US20090246085A1 Liquid Handling System and Methods for Mixing and Delivering Liquid Reagents 审中-公开
标题翻译：液体处理系统和混合和提供液体试剂的方法
公开(公告)号：US20090246085A1
公开(公告)日：2009-10-01
申请号：US12059960
申请日：2008-03-31
申请人： Alexander Watson , John Price , Parris Wellamn , John Kepler
发明人： Alexander Watson , John Price , Parris Wellamn , John Kepler
IPC分类号： B01L3/00 , B67C9/00
CPC分类号： B01L3/0293 , B01L3/502715 , B01L2200/16 , B01L2300/0672 , G01N35/1002 , G01N35/1079
摘要： A liquid storage apparatus provides a safe and easy to use device for efficiently managing liquid reagents used in a variety of laboratory equipment. The liquid storage apparatus helps reduce the likelihood of accidents, allows for flexibility of experimental design, and helps maximize the use of chemical regents to prevent waste. The apparatus includes a plurality of containers with a pierceable septum interface at each end. The apparatus also includes a lower array of needles with each of the lower needles in the lower array of needles arranged to penetrate the bottom pierceable septum of a different one of the containers. The apparatus further includes a piercing device arranged to penetrate the top pierceable septum of a different one of the containers. Each of the piercing devices include a passageway so gas can flow into the pierced container.
摘要翻译：液体储存装置提供了一种安全且易于使用的装置，用于有效地管理各种实验室设备中使用的液体试剂。液体储存装置有助于减少事故的可能性，允许实验设计的灵活性，并有助于最大限度地利用化学制剂来防止浪费。该装置包括在每个端部具有可刺破的隔膜接口的多个容器。该装置还包括下排的针，针的下排列中的每个下针被布置成穿透不同容器的底部可刺破的隔膜。该装置还包括穿刺装置，其被布置成穿透不同容器之一的顶部可刺破隔膜。每个穿孔装置包括通道，使得气体可以流入刺穿的容器中。

10. 发明申请

US20090226900A1 Methods for Reducing Contaminants in Nucleic Acid Sequencing by Synthesis 审中-公开
标题翻译：通过合成降低核酸测序中污染物的方法
公开(公告)号：US20090226900A1
公开(公告)日：2009-09-10
申请号：US12043056
申请日：2008-03-05
申请人： Hazen Babcock , Mirna Jarosz , Jennifer Colonell , Parris Wellman , Geoff Lowman , Jayson Bowers , John Kepler
发明人： Hazen Babcock , Mirna Jarosz , Jennifer Colonell , Parris Wellman , Geoff Lowman , Jayson Bowers , John Kepler
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6869 , C12Q1/6874 , C12Q2527/125
摘要： The disclosure provides methods that improve fidelity of the sequencing-by-synthesis reactions, including methods that reduce impurities and contamination in various reagents, reaction mixtures, and other components of the sequencing systems.
摘要翻译：本公开提供了提高合成反应顺序的保真度的方法，包括减少各种试剂，反应混合物和测序系统的其它组分中的杂质和污染物的方法。

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