专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09850530B2 Automatic real-time PCR system for the various analysis of biological sample 有权
公开(公告)号：US09850530B2
公开(公告)日：2017-12-26
申请号：US13881900
申请日：2011-10-27
申请人： Han Oh Park , Kwon Sic Kim , Yang Won Lee , Jin Il Lee , Byung Rae Jeong , Jong Hoon Kim
发明人： Han Oh Park , Kwon Sic Kim , Yang Won Lee , Jin Il Lee , Byung Rae Jeong , Jong Hoon Kim
IPC分类号： C12Q1/68 , B01L3/02 , C12Q1/02 , G01N35/02 , B01L7/00 , G01N35/00 , G01N35/04
CPC分类号： C12Q1/686 , B01L3/0227 , B01L3/0234 , B01L7/52 , B01L2300/0829 , B01L2300/1805 , B01L2400/0478 , B03C1/01 , B03C1/288 , B03C2201/26 , C12Q1/02 , C12Q1/6844 , G01N35/0098 , G01N35/028 , G01N2035/0425 , G01N2035/0465
摘要： The present invention relates to an automatic real-time quantitative amplification system which can perform analysis of various biological samples, and more particularly to an automatic real-time quantitative amplification system in which a plurality of decks for respectively accommodating biological samples are put in a deck storing/transferring device, whereby it is possible to automatically analyze an amount or existence of a target substance containing a target nucleic acid in the biologic sample, such as a particular gene, a particular, a particular pathogenic bacterium and a particular protein, by amplifying the target nucleic acid purified by some processes of purification, purification after culture, or purification after reaction of the target substance contained in the biological sample and then checking an amount of the amplified target nucleic acid.

2. 发明授权

US08703237B2 Methods of forming a material layer and methods of fabricating a memory device 有权
标题翻译：形成材料层的方法和制造存储器件的方法
公开(公告)号：US08703237B2
公开(公告)日：2014-04-22
申请号：US12465975
申请日：2009-05-14
申请人： Hye-young Park , Sung-lae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
发明人： Hye-young Park , Sung-lae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
IPC分类号： C23C16/00 , B05D5/12
CPC分类号： C23C16/305 , C23C16/16 , C23C16/18 , C23C16/45531
摘要： Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.
摘要翻译：提供了通过化学吸附金属原子到其表面上形成有阴离子的基板来形成材料层的方法，以及通过使用材料层形成方法制造存储器件的方法。因此，具有小直径的通孔可以填充材料层而不形成空隙或接缝。因此，可以获得可靠的存储器件。

3. 发明授权

US07838326B2 Methods of fabricating semiconductor device including phase change layer 有权
标题翻译：制造包括相变层的半导体器件的方法
公开(公告)号：US07838326B2
公开(公告)日：2010-11-23
申请号：US12405408
申请日：2009-03-17
申请人： Jin-Il Lee , Sung-Lae Cho , Ik-Soo Kim , Hye-Young Park , Do-Hyung Kim , Dong-Hyun Im
发明人： Jin-Il Lee , Sung-Lae Cho , Ik-Soo Kim , Hye-Young Park , Do-Hyung Kim , Dong-Hyun Im
IPC分类号： H01L21/00
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1616
摘要： Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.
摘要翻译：提供制造包括相变层的半导体器件的方法。方法可以包括在衬底上形成电介质层，在电介质层中形成开口，并在具有开口的衬底上沉积相变层，该相变层含有将热处理工艺的工艺温度降低到低于相变层的熔点。方法可以包括通过包括低于相变层的熔点的工艺温度的热处理工艺将一部分相变层从开口外部迁移到开口中。

4. 发明授权

US07569417B2 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device 有权
标题翻译：形成相变材料层的方法，相变存储单元的制造方法以及相变半导体存储器件的制造方法
公开(公告)号：US07569417B2
公开(公告)日：2009-08-04
申请号：US11353129
申请日：2006-02-14
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.
摘要翻译：公开了可用于半导体存储器件的相变材料层及其形成方法。该方法包括在具有设置在其中的基板的腔室中形成等离子体，提供包括锗基材料的第一源气体，以在将等离子体保持在腔室中的同时在基板上形成包括基于锗的材料的第一层，从而提供第二源气体，其包括与第一层反应的碲基材料，以在衬底上形成包含锗 - 碲复合材料的第一复合材料层，同时将等离子体保持在室中，提供包括锑基材料的第三源气体，以形成第二层，包括在第一复合材料层上的锑基材料，同时将等离子体保持在室中，并且提供包括碲基材料的第四源气体，以与包含锑基材料的第二层反应以形成第二复合材料层，锑 - 碲复合材料在第一层复合材料上的铺设 r。因此，可以在低温和功率下形成相变材料层以具有期望的电特性。

5. 发明授权

US07514315B2 Methods of forming capacitor structures having aluminum oxide diffusion barriers 有权
标题翻译：形成具有氧化铝扩散阻挡层的电容器结构的方法
公开(公告)号：US07514315B2
公开(公告)日：2009-04-07
申请号：US11733970
申请日：2007-04-11
申请人： Jong-Cheol Lee , Kyoung-Ryul Yoon , Ki-Vin Im , Jae-Hyun Yeo , Eun-Ae Chung , Jin-Il Lee
发明人： Jong-Cheol Lee , Kyoung-Ryul Yoon , Ki-Vin Im , Jae-Hyun Yeo , Eun-Ae Chung , Jin-Il Lee
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/75 , H01L28/90
摘要： A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.
摘要翻译：多层电极结构具有包括铝的导电层，形成在导电层上的氧化物层和氧扩散阻挡层。氧化物层包括氧化锆和/或氧化钛。通过再氧化氧化层，在导电层和氧化物层之间的界面处形成氧扩散阻挡层。氧扩散阻挡层包括氧化铝。

6. 发明申请

US20070018219A1 Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile semiconductor device 审中-公开
标题翻译：单元电池结构及其制造方法，具有单元电池结构的非挥发性半导体器件和制造非易失性半导体器件的方法
公开(公告)号：US20070018219A1
公开(公告)日：2007-01-25
申请号：US11480547
申请日：2006-07-05
申请人： Han-Jin Lim , Jung-Hyun Lee , Kyu-Ho Cho , Jin-Il Lee , Sung-Ho Park
发明人： Han-Jin Lim , Jung-Hyun Lee , Kyu-Ho Cho , Jin-Il Lee , Sung-Ho Park
IPC分类号： H01L29/94
CPC分类号： H01L45/04 , H01L45/122 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1675
摘要： A unit cell structure in a non-volatile semiconductor device includes a lower electrode. The variable resistor is formed on the lower electrode and includes a first insulation thin film, a third insulation thin film, and a second insulation thin film located between the first and third insulation thin films. A breakdown voltage of the second insulation thin film is lower than respective breakdown voltages of the first and third insulation thin films. An upper electrode is formed on the variable resistor.
摘要翻译：非易失性半导体器件中的晶胞结构包括下电极。可变电阻器形成在下电极上，并且包括位于第一和第三绝缘薄膜之间的第一绝缘薄膜，第三绝缘薄膜和第二绝缘薄膜。第二绝缘薄膜的击穿电压低于第一和第三绝缘薄膜的击穿电压。上电极形成在可变电阻上。

7. 发明授权

US07049232B2 Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same 有权
公开(公告)号：US07049232B2
公开(公告)日：2006-05-23
申请号：US10657596
申请日：2003-09-08
申请人： Kwang-hee Lee , Cha-young Yoo , Han-jin Lim , Sung-tae Kim , Suk-jin Chung , Wan-don Kim , Jung-hee Chung , Jin-il Lee
发明人： Kwang-hee Lee , Cha-young Yoo , Han-jin Lim , Sung-tae Kim , Suk-jin Chung , Wan-don Kim , Jung-hee Chung , Jin-il Lee
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , H01L21/28556 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/65
摘要： Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).

8. 发明授权

US08645790B2 Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device 有权
标题翻译：使用错误检测码的数据处理装置和方法，补偿数据偏移的方法，以及具有数据处理装置的半导体装置
公开(公告)号：US08645790B2
公开(公告)日：2014-02-04
申请号：US13239156
申请日：2011-09-21
申请人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
发明人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
IPC分类号： H03M13/00
CPC分类号： H03M13/09 , H04L1/0061
摘要： A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial. A data processing method for transmitting a first data includes a step of generating a first data, a step of generating cyclic redundancy check (CRC) information having at least one bit whose binary value is modified in response to a toggle information, and a step of generating a combined data by combining the generated CRC information and the first data as a combined data and outputting the combined data in serial.
摘要翻译：一种用于发送第一数据的数据处理装置包括被配置为提供第一数据的数据生成器，循环冗余校验（CRC）发生器，被配置为生成具有响应于切换信息修改其二进制值的至少一个比特的至少一个比特的CRC信息以及数据发送器，被配置为组合CRC信息和第一数据作为组合数据，并串行输出组合数据。用于发送第一数据的数据处理方法包括产生第一数据的步骤，产生具有响应于切换信息修改其二进制值的至少一个比特的循环冗余校验（CRC）信息的步骤，以及步骤通过组合生成的CRC信息和第一数据作为组合数据来生成组合数据，并串行输出组合数据。

9. 发明授权

US08133758B2 Method of fabricating phase-change memory device having TiC layer 有权
标题翻译：具有TiC层的相变存储器件的制造方法
公开(公告)号：US08133758B2
公开(公告)日：2012-03-13
申请号：US12623513
申请日：2009-11-23
申请人： Gyu-Hwan Oh , Young-Lim Park , Soon-Oh Park , Jin-Il Lee , Chang-Su Kim
发明人： Gyu-Hwan Oh , Young-Lim Park , Soon-Oh Park , Jin-Il Lee , Chang-Su Kim
IPC分类号： H01L21/00
CPC分类号： H01L45/124 , C23C16/32 , C23C16/45523 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/16 , H01L45/1666
摘要： Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, patterning the TiC layer to form a lower electrode on the contact, and forming the phase-change pattern on the lower electrode.
摘要翻译：提供一种制造相变存储器件的方法。相变存储器件包括具有开关器件和相变模式的存储器单元。该方法包括：在使用等离子体增强循环化学气相沉积（PE循环CVD）工艺电连接开关装置的触点上形成TiC层，图案化TiC层以在触点上形成下电极，并在下电极。

10. 发明申请

US20110180774A1 Phase Change Memory Device 有权
标题翻译：相变存储器件
公开(公告)号：US20110180774A1
公开(公告)日：2011-07-28
申请号：US13082557
申请日：2011-04-08
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/34 , C23C16/45536 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要翻译：提供了一种相变存储器件和用于形成相变存储器件的方法。该方法包括通过向基底提供反应性基团来形成相变材料层。反应性基团可以包括相变材料和氮的前体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式