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1. 发明授权

US5430305A Light-induced voltage alteration for integrated circuit analysis 失效
标题翻译：用于集成电路分析的光诱导电压变化
公开(公告)号：US5430305A
公开(公告)日：1995-07-04
申请号：US225021
申请日：1994-04-08
申请人： Edward I. Cole, Jr. , Jerry M. Soden
发明人： Edward I. Cole, Jr. , Jerry M. Soden
IPC分类号： G01R31/311 , G01N21/88
CPC分类号： G01R31/311
摘要： An apparatus and method are described for analyzing an integrated circuit (IC), The invention uses a focused light beam that is scanned over a surface of the IC to generate a light-induced voltage alteration (LIVA) signal for analysis of the IC, The LIVA signal may be used to generate an image of the IC showing the location of any defects in the IC; and it may be further used to image and control the logic states of the IC. The invention has uses for IC failure analysis, for the development of ICs, for production-line inspection of ICs, and for qualification of ICs.
摘要翻译：描述了用于分析集成电路（IC）的装置和方法。本发明使用在IC的表面上扫描的聚焦光束以产生用于IC的分析的光感应电压变化（LIVA）信号。 LIVA信号可用于产生显示IC中任何缺陷位置的IC的图像; 并且可以进一步用于对IC的逻辑状态进行成像和控制。本发明用于IC故障分析，IC开发，IC生产线检测和IC鉴定。

2. 发明授权

US5844416A Ion-beam apparatus and method for analyzing and controlling integrated circuits 失效
标题翻译：用于分析和控制集成电路的离子束装置和方法
公开(公告)号：US5844416A
公开(公告)日：1998-12-01
申请号：US552184
申请日：1995-11-02
申请人： Ann N. Campbell , Jerry M. Soden
发明人： Ann N. Campbell , Jerry M. Soden
IPC分类号： G01R31/303 , G01R31/302
CPC分类号： G01R31/303
摘要： An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.
摘要翻译：一种用于分析和控制集成电路的离子束装置和方法。离子束装置包括用于保持一个或多个集成电路（IC）的级; 用于产生聚焦离子束的源装置; 以及光束引导装置，用于引导聚焦离子束照射IC的预定部分足够的时间，以向IC的预定元件提供离子束产生的电输入信号。该装置和方法具有对IC的故障分析和开发分析的应用，并且允许IC内的逻辑状态或器件参数的改变，控制或编程与IC的所施加的电刺激分开或组合以用于分析。包括二次粒子检测器和电子泛水枪的本发明的优选实施例还允许通过二次离子或电子对IC进行成像，并允许至少部分去除或擦除离子束产生的电输入信号。

3. 发明授权

US07525325B1 System and method for floating-substrate passive voltage contrast 失效
标题翻译：浮动基板无源电压对比的系统和方法
公开(公告)号：US07525325B1
公开(公告)日：2009-04-28
申请号：US11640720
申请日：2006-12-18
申请人： Mark W. Jenkins , Edward I. Cole, Jr. , Paiboon Tangyunyong , Jerry M. Soden , Jeremy A. Walraven , Alejandro A. Pimentel
发明人： Mark W. Jenkins , Edward I. Cole, Jr. , Paiboon Tangyunyong , Jerry M. Soden , Jeremy A. Walraven , Alejandro A. Pimentel
IPC分类号： G01R31/305 , G01R31/26 , G01N23/00
CPC分类号： G01R31/307
摘要： A passive voltage contrast (PVC) system and method are disclosed for analyzing ICs to locate defects and failure mechanisms. During analysis a device side of a semiconductor die containing the IC is maintained in an electrically-floating condition without any ground electrical connection while a charged particle beam is scanned over the device side. Secondary particle emission from the device side of the IC is detected to form an image of device features, including electrical vias connected to transistor gates or to other structures in the IC. A difference in image contrast allows the defects or failure mechanisms be pinpointed. Varying the scan rate can, in some instances, produce an image reversal to facilitate precisely locating the defects or failure mechanisms in the IC. The system and method are useful for failure analysis of ICs formed on substrates (e.g. bulk semiconductor substrates and SOI substrates) and other types of structures.
摘要翻译：公开了一种无源电压对比（PVC）系统和方法，用于分析IC来定位缺陷和故障机制。在分析期间，在装置侧扫描带电粒子束时，包含IC的半导体管芯的器件侧保持在电浮动状态而没有任何接地电连接。检测来自IC的器件侧的二次粒子发射以形成器件特征的图像，包括连接到晶体管栅极的电通路或IC中的其它结构。图像对比度的差异允许确定缺陷或故障机制。在某些情况下，改变扫描速率可以产生图像反转，以便于精确定位IC中的缺陷或故障机制。该系统和方法对于在衬底（例如，体半导体衬底和SOI衬底）上形成的IC和其它类型的结构的故障分析是有用的。

4. 发明授权

US6031386A Apparatus and method for defect testing of integrated circuits 失效
标题翻译：集成电路缺陷检测装置及方法
公开(公告)号：US6031386A
公开(公告)日：2000-02-29
申请号：US962465
申请日：1997-10-31
申请人： Edward I. Cole, Jr. , Jerry M. Soden
发明人： Edward I. Cole, Jr. , Jerry M. Soden
IPC分类号： G01R31/30 , G01R31/26
CPC分类号： G01R31/3004
摘要： An apparatus and method for defect and failure-mechanism testing of integrated circuits (ICs) is disclosed. The apparatus provides an operating voltage, V.sub.DD, to an IC under test and measures a transient voltage component, V.sub.DDT, signal that is produced in response to switching transients that occur as test vectors are provided as inputs to the IC. The amplitude or time delay of the V.sub.DDT signal can be used to distinguish between defective and defect-free (i.e. known good) ICs. The V.sub.DDT signal is measured with a transient digitizer, a digital oscilloscope, or with an IC tester that is also used to input the test vectors to the IC. The present invention has applications for IC process development, for the testing of ICs during manufacture, and for qualifying ICs for reliability.
摘要翻译：公开了一种用于集成电路（IC）的缺陷和故障机制测试的装置和方法。该装置向待测IC提供工作电压VDD，并测量响应于作为测试向量作为IC的输入提供的切换瞬变而产生的瞬态电压分量VDDT信号。 VDDT信号的幅度或时间延迟可用于区分有缺陷和无缺陷（即已知的良好）IC。 VDDT信号用瞬态数字转换器，数字示波器或IC测试仪测量，也可用于向IC输入测试矢量。本发明具有用于IC工艺开发的应用，用于制造期间的IC的测试以及用于可靠性的IC的合格化。

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