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1. 发明授权

US5844416A Ion-beam apparatus and method for analyzing and controlling integrated circuits 失效
标题翻译：用于分析和控制集成电路的离子束装置和方法
公开(公告)号：US5844416A
公开(公告)日：1998-12-01
申请号：US552184
申请日：1995-11-02
申请人： Ann N. Campbell , Jerry M. Soden
发明人： Ann N. Campbell , Jerry M. Soden
IPC分类号： G01R31/303 , G01R31/302
CPC分类号： G01R31/303
摘要： An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.
摘要翻译：一种用于分析和控制集成电路的离子束装置和方法。离子束装置包括用于保持一个或多个集成电路（IC）的级; 用于产生聚焦离子束的源装置; 以及光束引导装置，用于引导聚焦离子束照射IC的预定部分足够的时间，以向IC的预定元件提供离子束产生的电输入信号。该装置和方法具有对IC的故障分析和开发分析的应用，并且允许IC内的逻辑状态或器件参数的改变，控制或编程与IC的所施加的电刺激分开或组合以用于分析。包括二次粒子检测器和电子泛水枪的本发明的优选实施例还允许通过二次离子或电子对IC进行成像，并允许至少部分去除或擦除离子束产生的电输入信号。

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