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    • 1. 发明授权
    • Isolated high performance FET with a controllable body resistance
    • 隔离式高性能FET,具有可控制的体电阻
    • US07939894B2
    • 2011-05-10
    • US12185368
    • 2008-08-04
    • Terence B. HookJenny HuJae-Eun Park
    • Terence B. HookJenny HuJae-Eun Park
    • H01L21/70
    • H01L27/0738H01L29/78
    • The present invention provides a method of controlling bias in an electrical device including providing semiconductor devices on a bulk semiconductor substrate each including an active body region that is isolated from the active body region of adjacent devices, and providing a body resistor in electrical contact with the active body region of the bulk semiconductor substrate, wherein the body resistor provides for adjustability of the body potential of the semiconductor devices. In another aspect the present invention provides a semiconductor device including a bulk semiconductor substrate, at least one field effect transistor formed on the bulk semiconductor substrate including an isolated active body region, and a resistor in electrical communication with the isolated active body region.
    • 本发明提供了一种控制电气装置中的偏置的方法,包括提供在体半导体衬底上的半导体器件,每个半导体器件包括与相邻器件的有源体区隔离的有源体区域,以及提供与电极接触的体电阻器 活体体区域,其中体电阻器提供半导体器件的体电位的可调节性。 在另一方面,本发明提供了一种半导体器件,其包括体半导体衬底,形成在包括隔离的有源体区域的体半导体衬底上的至少一个场效应晶体管和与隔离的有源体区域电连通的电阻器。
    • 3. 发明申请
    • ISOLATED HIGH PERFORMANCE FET WITH A CONTROLLABLE BODY RESISTANCE
    • 具有可控制体电阻的隔离型高性能FET
    • US20100025769A1
    • 2010-02-04
    • US12185368
    • 2008-08-04
    • Terence B. HookJenny HuJaee-Eun Park
    • Terence B. HookJenny HuJaee-Eun Park
    • H01L27/06H01L21/8238
    • H01L27/0738H01L29/78
    • The present invention provides a method of controlling bias in an electrical device including providing semiconductor devices on a bulk semiconductor substrate each including an active body region that is isolated from the active body region of adjacent devices, and providing a body resistor in electrical contact with the active body region of the bulk semiconductor substrate, wherein the body resistor provides for adjustability of the body potential of the semiconductor devices. In another aspect the present invention provides a semiconductor device including a bulk semiconductor substrate, at least one field effect transistor formed on the bulk semiconductor substrate including an isolated active body region, and a resistor in electrical communication with the isolated active body region.
    • 本发明提供了一种控制电气装置中的偏置的方法,包括提供在体半导体衬底上的半导体器件,每个半导体器件包括与相邻器件的有源体区隔离的有源体区域,以及提供与电极接触的体电阻器 活体体区域,其中体电阻器提供半导体器件的体电位的可调节性。 在另一方面,本发明提供了一种半导体器件,其包括体半导体衬底,形成在包括隔离的有源体区域的体半导体衬底上的至少一个场效应晶体管和与隔离的有源体区域电连通的电阻器。