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1. 发明申请

US20090045468A1 TRENCH ISOLATION AND METHOD OF FABRICATING TRENCH ISOLATION 有权
标题翻译： TRENCH分离和制备TRENCH隔离的方法
公开(公告)号：US20090045468A1
公开(公告)日：2009-02-19
申请号：US11839585
申请日：2007-08-16
申请人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
发明人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/76224 , H01L21/76237 , H01L21/76283 , H01L21/82 , H01L21/823878 , H01L21/823892
摘要： Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
摘要翻译：沟槽隔离结构和形成沟槽隔离结构的方法。所述结构包括在衬底的硅区域中的沟槽，所述沟槽从所述衬底的顶表面延伸到所述硅区域中; 在沟槽的侧壁上的离子注入停止层; 填充沟槽中的剩余空间的介电填充材料，所述介电填充材料不包括在所述停止层中发现的任何材料; 在所述沟槽的第一侧上的所述硅区域的第一区域中的N型掺杂剂物质; 所述N型掺杂剂物质在所述电介质材料的与所述沟槽的第一侧相邻的第一区域中; 在沟槽的第二侧上的硅区域的第二区域中的P型掺杂物种; 以及邻近沟槽第二侧的电介质材料的第二区域中的P型掺杂剂物质。

2. 发明授权

US06617220B2 Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base 有权
标题翻译：用于制造外延基极的外延基极双极晶体管的方法
公开(公告)号：US06617220B2
公开(公告)日：2003-09-09
申请号：US09810856
申请日：2001-03-16
申请人： James Stuart Dunn , David L. Harame , Jeffrey Bowman Johnson , Robb Allen Johnson , Louis DeWolf Lanzerotti , Stephen Arthur St. Onge
发明人： James Stuart Dunn , David L. Harame , Jeffrey Bowman Johnson , Robb Allen Johnson , Louis DeWolf Lanzerotti , Stephen Arthur St. Onge
IPC分类号： H01L21331
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.
摘要翻译：一种外延基极双极晶体管，包括在单晶单基片上的外延单晶层; 在单晶层的一部分上的凸起的发射体; 在半导体衬底的表面上的凸起的非本征基底; 所述凸起发射极和所述凸出的外部基极之间的绝缘体，其中所述绝缘体是间隔物; 以及从凸起的发射极和凸出的外部基极的扩散，以在单晶层中提供发射极扩散和非本征的基极扩散，其中发射极扩散具有发射极扩散结深度。

3. 发明授权

US08012848B2 Trench isolation and method of fabricating trench isolation 有权
标题翻译：沟槽隔离和制造沟槽隔离的方法
公开(公告)号：US08012848B2
公开(公告)日：2011-09-06
申请号：US11839585
申请日：2007-08-16
申请人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
发明人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/76237 , H01L21/76283 , H01L21/82 , H01L21/823878 , H01L21/823892
摘要： Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
摘要翻译：沟槽隔离结构和形成沟槽隔离结构的方法。所述结构包括在衬底的硅区域中的沟槽，所述沟槽从所述衬底的顶表面延伸到所述硅区域中; 在沟槽的侧壁上的离子注入停止层; 填充沟槽中的剩余空间的介电填充材料，所述介电填充材料不包括在所述停止层中发现的任何材料; 在所述沟槽的第一侧上的所述硅区域的第一区域中的N型掺杂剂物质; 所述N型掺杂剂物质在所述电介质材料的与所述沟槽的第一侧相邻的第一区域中; 在沟槽的第二侧上的硅区域的第二区域中的P型掺杂物种; 以及邻近沟槽第二侧的电介质材料的第二区域中的P型掺杂剂物质。

4. 发明授权

US07851923B2 Low resistance and inductance backside through vias and methods of fabricating same 有权
标题翻译：低电阻和电感背面穿过通孔及其制造方法
公开(公告)号：US07851923B2
公开(公告)日：2010-12-14
申请号：US12410728
申请日：2009-03-25
申请人： Mete Erturk , Robert A. Groves , Jeffrey Bowman Johnson , Alvin Jose Joseph , Qizhi Liu , Edmund Juris Sprogis , Anthony Kendall Stamper
发明人： Mete Erturk , Robert A. Groves , Jeffrey Bowman Johnson , Alvin Jose Joseph , Qizhi Liu , Edmund Juris Sprogis , Anthony Kendall Stamper
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation in a substrate, the substrate having a frontside and an opposing backside; forming a first dielectric layer on the frontside of the substrate; forming a trench in the first dielectric layer, the trench aligned over and within a perimeter of the dielectric isolation and extending to the dielectric isolation; extending the trench formed in the first dielectric layer through the dielectric isolation and into the substrate to a depth less than a thickness of the substrate; filling the trench and co-planarizing a top surface of the trench with a top surface of the first dielectric layer to form an electrically conductive through via; and thinning the substrate from a backside of the substrate to expose the through via.
摘要翻译：背面接触结构及其制造方法。该方法包括：在衬底中形成电介质隔离，所述衬底具有前侧和相对的背面; 在所述基板的前侧形成第一电介质层; 在所述第一电介质层中形成沟槽，所述沟槽在所述电介质隔离的周边内并且在所述介电隔离的周边内对准并且延伸到所述电介质隔将形成在第一电介质层中的沟槽通过电介质隔离延伸到衬底中至小于衬底厚度的深度; 填充沟槽并将沟槽的顶表面与第一介电层的顶表面共平面化以形成导电通孔; 并从衬底的背面稀释衬底以露出通孔。

5. 发明授权

US07563714B2 Low resistance and inductance backside through vias and methods of fabricating same 有权
标题翻译：低电阻和电感背面穿过通孔及其制造方法
公开(公告)号：US07563714B2
公开(公告)日：2009-07-21
申请号：US11275542
申请日：2006-01-13
申请人： Mete Erturk , Robert A. Groves , Jeffrey Bowman Johnson , Alvin Jose Joseph , Qizhi Liu , Edmund Juris Sprogis , Anthony Kendall Stamper
发明人： Mete Erturk , Robert A. Groves , Jeffrey Bowman Johnson , Alvin Jose Joseph , Qizhi Liu , Edmund Juris Sprogis , Anthony Kendall Stamper
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation in a substrate, the substrate having a frontside and an opposing backside; forming a first dielectric layer on the frontside of the substrate; forming a trench in the first dielectric layer, the trench aligned over and within a perimeter Of the dielectric isolation and extending to the dielectric isolation; extending the trench formed in the first dielectric layer through the dielectric isolation and into the substrate to a depth less than a thickness of the substrate; filling the trench and co-planarizing a top surface of the trench with a top surface of the first dielectric layer to form an electrically conductive through via; and thinning the substrate from a backside of the substrate to expose the through via.
摘要翻译：背面接触结构及其制造方法。该方法包括：在衬底中形成电介质隔离，所述衬底具有前侧和相对的背面; 在所述基板的前侧形成第一电介质层; 在所述第一电介质层中形成沟槽，所述沟槽在所述电介质隔离的周边内并且在所述介质隔离的周边内对准并且延伸到所述电介质隔离; 将形成在第一电介质层中的沟槽通过电介质隔离延伸到衬底中至小于衬底厚度的深度; 填充沟槽并将沟槽的顶表面与第一介电层的顶表面共平面化以形成导电通孔; 并从衬底的背面稀释衬底以露出通孔。

6. 发明申请

US20110278674A1 TRENCH ISOLATION AND METHOD OF FABRICATING TRENCH ISOLATION 审中-公开
标题翻译： TRENCH分离和制备TRENCH隔离的方法
公开(公告)号：US20110278674A1
公开(公告)日：2011-11-17
申请号：US13192561
申请日：2011-07-28
申请人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
发明人： Terence Blackwell Hook , Jeffrey Bowman Johnson , James Spiros Nakos
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/76224 , H01L21/76237 , H01L21/76283 , H01L21/82 , H01L21/823878 , H01L21/823892
摘要： Trench isolation structure and method of forming trench isolation structures. The structures includes a trench in a silicon region of a substrate, the trench extending from a top surface of the substrate into the silicon region; an ion implantation stopping layer over sidewalls of the trench; a dielectric fill material filling remaining space in the trench, the dielectric fill material not including any materials found in the stopping layer; an N-type dopant species in a first region of the silicon region on a first side of the trench; the N-type dopant species in a first region of the dielectric material adjacent to the first side of the trench; a P-type dopant species in a second region of the silicon region on a second side of the trench; and the P-type dopant species in a second region of the dielectric material adjacent to the second side of the trench.
摘要翻译：沟槽隔离结构和形成沟槽隔离结构的方法。所述结构包括在衬底的硅区域中的沟槽，所述沟槽从所述衬底的顶表面延伸到所述硅区域中; 在沟槽的侧壁上的离子注入停止层; 填充沟槽中的剩余空间的介电填充材料，所述介电填充材料不包括在所述停止层中发现的任何材料; 在所述沟槽的第一侧上的所述硅区域的第一区域中的N型掺杂剂物质; 所述N型掺杂剂物质在所述电介质材料的与所述沟槽的第一侧相邻的第一区域中; 在沟槽的第二侧上的硅区域的第二区域中的P型掺杂物种; 以及邻近沟槽第二侧的电介质材料的第二区域中的P型掺杂剂物质。

7. 发明授权

US07381997B2 Lateral silicided diodes 有权
公开(公告)号：US07381997B2
公开(公告)日：2008-06-03
申请号：US11944839
申请日：2007-11-26
申请人： Douglas Duane Coolbaugh , Jeffrey Bowman Johnson , Xuefeng Liu , Bradley Alan Orner , Robert Mark Rassel , David Charles Sheridan
发明人： Douglas Duane Coolbaugh , Jeffrey Bowman Johnson , Xuefeng Liu , Bradley Alan Orner , Robert Mark Rassel , David Charles Sheridan
IPC分类号： H01L21/329
CPC分类号： H01L29/872 , H01L29/0657 , H01L29/417 , H01L29/66136 , H01L29/66143 , H01L29/861 , H01L29/868
摘要： A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the trenches. The fabrication of lateral diodes may be integrated with the fabrication of field effect, bipolar and SiGe bipolar transistors.

8. 发明授权

US07335927B2 Lateral silicided diodes 有权
标题翻译：侧面硅化二极管
公开(公告)号：US07335927B2
公开(公告)日：2008-02-26
申请号：US11275794
申请日：2006-01-30
申请人： Douglas Duane Coolbaugh , Jeffrey Bowman Johnson , Xuefeng Liu , Bradley Alan Orner , Robert Mark Rassel , David Charles Sheridan
发明人： Douglas Duane Coolbaugh , Jeffrey Bowman Johnson , Xuefeng Liu , Bradley Alan Orner , Robert Mark Rassel , David Charles Sheridan
IPC分类号： H01L21/8238
CPC分类号： H01L29/872 , H01L29/0657 , H01L29/417 , H01L29/66136 , H01L29/66143 , H01L29/861 , H01L29/868
摘要： A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the trenches. The fabrication of lateral diodes may be integrated with the fabrication of field effect, bipolar and SiGe bipolar transistors.
摘要翻译：制造横向二极管的结构和方法。二极管包括肖特基二极管和PIN二极管。制造方法包括在硅衬底中形成一个或多个掺杂区域和更多的沟槽，并在沟槽的侧壁上形成金属硅化物。横向二极管的制造可以与场效应，双极和SiGe双极晶体管的制造集成。

9. 发明授权

US06812545B2 Epitaxial base bipolar transistor with raised extrinsic base 有权
标题翻译：外延基极双极晶体管，外加基极
公开(公告)号：US06812545B2
公开(公告)日：2004-11-02
申请号：US10425270
申请日：2003-04-29
申请人： James Stuart Dunn , David L. Harame , Jeffrey Bowman Johnson , Robb Allen Johnson , Louis DeWolf Lanzerotti , Stephen Arthur St. Onge
发明人： James Stuart Dunn , David L. Harame , Jeffrey Bowman Johnson , Robb Allen Johnson , Louis DeWolf Lanzerotti , Stephen Arthur St. Onge
IPC分类号： H01L27082
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.
摘要翻译：一种外延基极双极晶体管，包括在单晶单个衬底上的外延单晶层; 半导体表面上的凸起的发射极; 在半导体衬底的表面上凸起的非本征基底; 凸起的发射极和凸出的外部基极之间的绝缘体，其中所述绝缘体是间隔物; 以及来自凸起的发射极和凸出的外部基极的扩散，以在所述单晶衬底中提供发射极扩散和非本征基极扩散，其中所述发射极扩散具有发射极扩散结深度，并且其中所述发射极延伸到所述衬底表面，所述基底延伸到所述衬底表面，其中所述发射极与基底表面的高度差小于所述发射极结深度的20％以及其制造方法。

10. 发明授权

US5883629A Recursive and anisotropic method and article of manufacture for generating a balanced computer representation of an object 失效
标题翻译：递归和各向异性方法和制造物品，用于生成对象的平衡计算机表示
公开(公告)号：US5883629A
公开(公告)日：1999-03-16
申请号：US674228
申请日：1996-06-28
申请人： Jeffrey Bowman Johnson
发明人： Jeffrey Bowman Johnson
IPC分类号： G06T17/20 , G06T9/00
CPC分类号： G06T17/20
摘要： A method for generating a computer representation of a two-dimensional or three-dimensional object featuring recursive and anisotropic division of the representation. A bitree approach is provided for successively dividing into two equal parts any portion of the computer representation of the object. Each subdivision into two parts is accomplished by dividing the portion either horizontally or vertically. The method is implemented over a user interface to an information handling system comprised of one or more processors, a memory system, I/O devices, and an operating system program. Each subdivision of the computer representation of the object is comprised of a data structure that is efficiently stored in the memory system and dynamically updated to contain information about its neighboring subdivisions in order that balancing can be effectively achieved.
摘要翻译：一种用于生成二维或三维对象的计算机表示的方法，其特征在于表示的递归和各向异性划分。提供了一种比特方法，用于将对象的计算机表示的任何部分连续地分成两个相等的部分。通过将部分水平或垂直分割，将每个细分成两个部分。该方法通过用户接口实现到由一个或多个处理器，存储器系统，I / O设备和操作系统程序组成的信息处理系统。对象的计算机表示的每个细分包括有效地存储在存储器系统中并且动态地更新以包含关于其相邻子部分的信息的数据结构，以便可以有效地实现平衡。

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