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    • 1. 发明授权
    • High-power surface-emitting semiconductor injection laser with etched
internal 45 degree and 90 degree micromirrors
    • 具有蚀刻内部45度和90度微镜的大功率表面发射半导体注入激光器
    • US5253263A
    • 1993-10-12
    • US850083
    • 1992-03-12
    • Michael JansenJane J. YangSzutsun S. OuThomas J. Roth
    • Michael JansenJane J. YangSzutsun S. OuThomas J. Roth
    • H01S3/00H01S5/00H01S5/02H01S5/026H01S5/18H01S3/19
    • H01S5/18H01S5/005H01S5/0203H01S5/0207H01S5/026H01S5/0267H01S5/1085H01S5/2027
    • A surface-emitting semiconductor injection laser for use in fabricating high-power two-dimensional monolithic laser arrays. The surface-emitting semiconductor laser includes a substrate and an active layer and a pair of cladding layers formed on the substrate. A folded resonator cavity is formed by highly-reflective 45.degree. and 90.degree. micromirrors that are etched at either end of the active layer and by a partially-reflective reflector that is positioned between the 45.degree. micromirror and the substrate for outcoupling the laser light from the resonator cavity. The semiconductor laser is mounted junction down on a heat sink to position the active layer close to the heat sink for good heat dissipation at high power levels. In one preferred embodiment of the present invention, the substrate is optically opaque and an opening is etched in the substrate for outcoupling the laser light. In another preferred embodiment of the invention, the substrate is optically transparent and a microlens is formed on the substrate to collimate the laser light.
    • 一种用于制造大功率二维单片激光器阵列的表面发射半导体注入激光器。 表面发射半导体激光器包括衬底和形成在衬底上的有源层和一对覆层。 折叠的谐振腔由高反射的45°和90°的微反射镜形成,这些反射镜在有源层的两端蚀刻,部分反射的反射镜位于45°微镜和衬底之间,用于将激光 谐振腔。 将半导体激光器安装在散热片上,将活性层定位在靠近散热片的位置,以便在高功率水平下实现良好的散热。 在本发明的一个优选实施例中,衬底是光学不透明的,并且在衬底中蚀刻开口用于输出激光。 在本发明的另一个优选实施例中,衬底是光学透明的,并且在衬底上形成微透镜以准直激光。
    • 3. 发明授权
    • Superluminescent diode
    • 超发光二极管
    • US4896195A
    • 1990-01-23
    • US168067
    • 1988-03-14
    • Michael JansenMoshe SergantSzutsun S. OuJaroslava Z. WilcoxJane J. YangLarry R. Eaton
    • Michael JansenMoshe SergantSzutsun S. OuJaroslava Z. WilcoxJane J. YangLarry R. Eaton
    • H01L33/00
    • H01L33/0045
    • A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.
    • 一种半导体二极管结构,包括光吸收衬底,有源区和围绕有源区的一对覆层。 激光通过倾斜端面被抑制,该倾斜端面将光线向下反射到衬底中,在其被吸收的位置,仅提供通过有源区域的自发发射的光的一次通过。 一个公开的实施例具有用于边缘发射光的外耦合的常规端面。 另一个实施例包括形成在与倾斜面相邻的衬底的开口中的表面发射小面。 又一实施例具有两个倾斜面。 一个倾斜小面可以用于将光反射到吸收衬底中,或者两者可以用于通过单独的表面发射面反射光。