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1. 发明授权

US07385334B1 Contour mode resonators with acoustic reflectors 有权
标题翻译：具有声反射器的轮廓模式谐振器
公开(公告)号：US07385334B1
公开(公告)日：2008-06-10
申请号：US11602011
申请日：2006-11-20
申请人： Roy H. Olsson , James G. Fleming , Melanie R. Tuck
发明人： Roy H. Olsson , James G. Fleming , Melanie R. Tuck
IPC分类号： H01L41/08
CPC分类号： H03H3/0072 , H03H9/172 , H03H9/175 , H03H9/2431 , H03H2009/02503 , H03H2009/241
摘要： A microelectromechanical (MEM) resonator is disclosed which has a linear or ring-shaped acoustic resonator suspended above a substrate by an acoustic reflector. The acoustic resonator can be formed with a piezoelectric material (e.g. aluminum nitride, zinc oxide or PZT), or using an electrostatically-actuated material. The acoustic reflector (also termed an acoustic mirror) uses alternating sections of a relatively low acoustic impedance ZL material and a relatively high acoustic impedance ZH material to isolate the acoustic resonator from the substrate. The MEM resonator, which can be formed on a silicon substrate with conventional CMOS circuitry, has applications for forming oscillators, rf filters, and acoustic sensors.
摘要翻译：公开了一种具有通过声反射器悬挂在衬底上的线性或环形声谐振器的微机电（MEM）谐振器。声谐振器可以由压电材料（例如氮化铝，氧化锌或PZT）形成，或者使用静电致动材料。声反射器（也称为声反射镜）使用相对较低的声阻抗Z L L材料和相对较高的声阻抗Z H H材料的交替部分来隔离声谐振器从底物。可以用常规CMOS电路形成在硅衬底上的MEM谐振器具有用于形成振荡器，射频滤波器和声学传感器的应用。

2. 发明授权

US07339454B1 Tensile-stressed microelectromechanical apparatus and microelectromechanical relay formed therefrom 有权
标题翻译：拉伸应力微机电装置和由其形成的微机电继电器
公开(公告)号：US07339454B1
公开(公告)日：2008-03-04
申请号：US11103311
申请日：2005-04-11
申请人： James G. Fleming
发明人： James G. Fleming
IPC分类号： H01H37/48 , H01H37/50
CPC分类号： H01H61/04 , H01H2001/0047 , H01H2061/006
摘要： A microelectromechanical (MEM) apparatus is disclosed which includes a shuttle suspended above a substrate by two or more sets of tensile-stressed beams which are operatively connected to the shuttle and which can comprise tungsten or a silicon nitride/polysilicon composite structure. Initially, the tensile stress in each set of beams is balanced. However, the tensile stress can be unbalanced by heating one or more of the sets of beams; and this can be used to move the shuttle over a distance of up to several tens of microns. The MEM apparatus can be used to form a MEM relay having relatively high contact and opening forces, and with or without a latching capability.
摘要翻译：公开了一种微机电（MEM）装置，其包括通过两个或更多组可拉伸应力梁悬挂在基板上方的梭，其可操作地连接到梭，并且其可以包括钨或氮化硅/多晶硅复合结构。最初，每组梁的拉伸应力是平衡的。然而，拉伸应力可以通过加热一组或多束光束而不平衡; 并且这可以用于将梭子移动高达几十微米的距离。可以使用MEM装置来形成具有相对高的接触和打开力并具有或不具有锁定能力的MEM继电器。

3. 发明授权

US07079309B1 Use of a photonic crystal for optical amplifier gain control 有权
标题翻译：使用光子晶体进行光放大器增益控制
公开(公告)号：US07079309B1
公开(公告)日：2006-07-18
申请号：US10607065
申请日：2003-06-25
申请人： Shawn-Yu Lin , James G. Fleming , Ihab El-Kady
发明人： Shawn-Yu Lin , James G. Fleming , Ihab El-Kady
IPC分类号： H01S4/00 , F21V9/00 , G02F1/00
CPC分类号： H01S3/063 , H01S3/1608 , H01S3/1628 , H01S5/105 , H01S5/3031 , H01S5/50 , H01S2301/04
摘要： An optical amplifier having a uniform gain profile uses a photonic crystal to tune the density-of-states of a gain medium so as to modify the light emission rate between atomic states. The density-of-states of the gain medium is tuned by selecting the size, shape, dielectric constant, and spacing of a plurality of microcavity defects in the photonic crystal. The optical amplifier is particularly useful for the regeneration of DWDM signals in long optical fibers.
摘要翻译：具有均匀增益分布的光放大器使用光子晶体来调节增益介质的状态密度，以便改变原子状态之间的发光速率。通过选择光子晶体中的多个微腔缺陷的尺寸，形状，介电常数和间距来调节增益介质的状态密度。光放大器特别适用于长光纤中DWDM信号的再生。

4. 发明授权

US07046411B1 Tensile-stressed microelectromechanical apparatus and micromirrors formed therefrom 有权
标题翻译：拉伸应力微机电装置和由其形成的微型反射镜
公开(公告)号：US07046411B1
公开(公告)日：2006-05-16
申请号：US11118573
申请日：2005-04-29
申请人： James G. Fleming
发明人： James G. Fleming
IPC分类号： H01H51/22 , G02B26/08
CPC分类号： B81B3/0032 , B81B2201/045 , B81B2203/053 , B81C2201/0164 , B81C2201/0167 , G02B26/0841 , Y10S359/904
摘要： A microelectromechanical (MEM) apparatus is disclosed which includes one or more tensile-stressed actuators that are coupled through flexures to a stage on a substrate. The tensile-stressed actuators, which can be formed from tensile-stressed tungsten or silicon nitride, initially raise the stage above the substrate without any applied electrical voltage, and can then be used to control the height or tilt angle of the stage. An electrostatic actuator can also be used in combination with each tensile-stressed actuator. The MEM apparatus has applications for forming piston micromirrors or tiltable micromirrors and independently addressable arrays of such devices.
摘要翻译：公开了一种微机电（MEM）装置，其包括一个或多个拉伸应力致动器，其通过挠曲件耦合到基板上的台。可以由拉应力钨或氮化硅形成的拉伸应力致动器最初将基底升高到基板上方，而没有任何施加的电压，然后可用于控制载物台的高度或倾斜角度。静电致动器也可以与每个拉伸应力致动器组合使用。 MEM装置具有用于形成活塞微镜或可倾斜的微反射镜以及这种装置的独立可寻址阵列的应用。

5. 发明授权

US06583350B1 Thermophotovoltaic energy conversion using photonic bandgap selective emitters 有权
标题翻译：使用光子带隙选择性发射器的光伏能量转换
公开(公告)号：US06583350B1
公开(公告)日：2003-06-24
申请号：US10114820
申请日：2002-04-03
申请人： James M. Gee , Shawn-Yu Lin , James G. Fleming , James B. Moreno
发明人： James M. Gee , Shawn-Yu Lin , James G. Fleming , James B. Moreno
IPC分类号： H01L31058
CPC分类号： H01K1/50 , H01K1/04 , H01K3/02 , H01L33/02
摘要： A method for thermophotovoltaic generation of electricity comprises heating a metallic photonic crystal to provide selective emission of radiation that is matched to the peak spectral response of a photovoltaic cell that converts the radiation to electricity. The use of a refractory metal, such as tungsten, for the photonic crystal enables high temperature operation for high radiant flux and high dielectric contrast for a full 3D photonic bandgap, preferable for efficient thermophotovoltaic energy conversion.
摘要翻译：一种用于电光发电的方法包括加热金属光子晶体以提供与将辐射转换成电的光伏电池的峰值光谱响应匹配的辐射的选择性发射。对于光子晶体，使用难熔金属（例如钨）可以实现高辐射通量的高温操作和用于全3D光子带隙的高介电对比度，对于有效的热光能转换而言是优选的。

6. 发明授权

US06414332B1 Media for control of thermal emission and methods of applications thereof 有权
标题翻译：用于控制热发射的介质及其应用方法
公开(公告)号：US06414332B1
公开(公告)日：2002-07-02
申请号：US09441221
申请日：1999-11-15
申请人： Shawn-Yu Lin , James G. Fleming
发明人： Shawn-Yu Lin , James G. Fleming
IPC分类号： G02F100
CPC分类号： C09D5/00
摘要： A new class of media for control of emission of thermal radiation from an object or part thereof is disclosed. These materials can be used for a wide variety of thermal control applications.
摘要翻译：公开了一类用于控制来自物体或其部分的热辐射发射的介质。这些材料可用于各种热控制应用。

7. 发明授权

US6020272A Method for forming suspended micromechanical structures 有权
标题翻译：形成悬浮微机械结构的方法
公开(公告)号：US6020272A
公开(公告)日：2000-02-01
申请号：US169307
申请日：1998-10-08
申请人： James G. Fleming
发明人： James G. Fleming
IPC分类号： B81B3/00 , B81B7/02 , B81C1/00 , H01L21/00
CPC分类号： B81C1/00626 , B81C2201/0132 , B81C2201/0133 , B81C2201/014 , B81C2201/053
摘要： A micromachining method is disclosed for forming a suspended micromechanical structure from {111} crystalline silicon. The micromachining method is based on the use of anisotropic dry etching to define lateral features of the structure which are etched down into a {111}-silicon substrate to a first etch depth, thereby forming sidewalls of the structure. The sidewalls are then coated with a protection layer, and the substrate is dry etched to a second etch depth to define a spacing of the structure from the substrate. A selective anisotropic wet etchant (e.g. KOH, EDP, TMAH, NaOH or CsOH) is used to laterally undercut the structure between the first and second etch depths, thereby forming a substantially planar lower surface of the structure along a {111} crystal plane that is parallel to an upper surface of the structure. The lateral extent of undercutting by the wet etchant is controlled and effectively terminated by either timing the etching, by the location of angled {111}-silicon planes or by the locations of preformed etch-stops. This present method allows the formation of suspended micromechanical structures having large vertical dimensions and large masses while allowing for detailed lateral features which can be provided by dry etch definition. Additionally, the method of the present invention is compatible with the formation of electronic circuitry on the substrate.
摘要翻译：公开了一种从{111}结晶硅形成悬浮微机械结构的微加工方法。微加工方法基于使用各向异性干蚀刻来限定结构的侧向特征，其被蚀刻成{111} - 硅基底到第一蚀刻深度，从而形成该结构的侧壁。然后用保护层涂覆侧壁，并且将基底干蚀刻至第二蚀刻深度以限定结构与基底的间隔。使用选择性各向异性湿蚀刻剂（例如KOH，EDP，TMAH，NaOH或CsOH）横向地削去第一和第二蚀刻深度之间的结构，由此沿{111}晶面形成基本上平面的该结构的下表面，平行于结构的上表面。通过湿蚀刻剂的底切的横向范围通过定时蚀刻，倾斜的{111} - 硅面的位置或预先形成的蚀刻停止点的位置来控制和有效地终止。该本方法允许形成具有大垂直尺寸和大质量的悬浮微机械结构，同时允许可通过干蚀刻定义提供的详细横向特征。另外，本发明的方法与基板上的电子电路的形成兼容。

8. 发明授权

US5963788A Method for integrating microelectromechanical devices with electronic circuitry 失效
标题翻译：将微机电装置与电子电路集成的方法
公开(公告)号：US5963788A
公开(公告)日：1999-10-05
申请号：US974586
申请日：1997-11-19
申请人： Carole C. Barron , James G. Fleming , Stephen Montague
发明人： Carole C. Barron , James G. Fleming , Stephen Montague
IPC分类号： B81B3/00 , B81B7/00 , B81B7/02 , G03F7/09 , G03F7/207 , G03F9/00 , H01L21/00
CPC分类号： G03F7/094 , B81C1/00246 , G03F9/70 , H01L24/24 , B81C2203/0728 , G01P2015/0828 , H01L2924/1305 , H01L2924/14 , Y10S148/105
摘要： A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.
摘要翻译：公开了用于将一个或多个微机电（MEM）装置与公共基板上的电子电路集成的方法。 MEM器件可以在衬底腔内制造并用牺牲材料封装。这允许MEM器件被退火，并且在使用一系列标准处理步骤在衬底上形成电子电路之前将衬底平坦化。在电子电路制造之后，在蚀刻释放过程期间，电子电路可以被氮化钛（TiN）和钨（W）的双层保护层保护，由此MEM器件通过蚀刻去除部分封装MEM器件的牺牲材料（例如二氧化硅或硅酸盐玻璃）。蚀刻释放方法优选使用氢氟酸（HF）和盐酸（HCl）的混合物进行，与使用缓冲的氧化物蚀刻剂相比，其减少了释放MEM装置的时间。在释放MEM器件之后，可以用基于过氧化物的蚀刻剂去除TiN：W保护层，而不损坏电子电路。

9. 发明授权

US5916634A Chemical vapor deposition of W-Si-N and W-B-N 失效
标题翻译： W-Si-N和W-B-N的化学气相沉积
公开(公告)号：US5916634A
公开(公告)日：1999-06-29
申请号：US724341
申请日：1996-10-01
申请人： James G. Fleming , Elizabeth Lynn Roherty-Osmun , Paul M. Smith , Jonathan S. Custer , Ronald V. Jones , Marc-A. Nicolet , Roland Madar , Claude Bernard
发明人： James G. Fleming , Elizabeth Lynn Roherty-Osmun , Paul M. Smith , Jonathan S. Custer , Ronald V. Jones , Marc-A. Nicolet , Roland Madar , Claude Bernard
IPC分类号： C23C16/30 , C23C16/34 , H01L21/768 , C23C16/08
CPC分类号： H01L21/76843 , C23C16/30 , C23C16/34
摘要： A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.
摘要翻译：一种通过化学气相沉积在衬底上沉积三元耐火材料的薄膜的方法，其中使用包含WF6（硅或硼）和氮的钨的前体源。结果是可用于扩散阻挡和微加工应用的W-Si-N或W-B-N薄膜。

10. 发明授权

US07733198B1 Microfabricated bulk wave acoustic bandgap device 有权
公开(公告)号：US07733198B1
公开(公告)日：2010-06-08
申请号：US11748832
申请日：2007-05-15
申请人： Roy H. Olsson , Ihab F. El-Kady , Frederick McCormick , James G. Fleming , Carol Fleming, legal representative
发明人： Roy H. Olsson , Ihab F. El-Kady , Frederick McCormick , James G. Fleming
IPC分类号： H03H9/00
CPC分类号： G10K11/20 , Y10T29/42
摘要： A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 μm or less).

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