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1. 发明授权

US06300205B1 Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions 有权
标题翻译：制造具有自对准有源，轻掺杂漏极和卤区的半导体器件的方法
公开(公告)号：US06300205B1
公开(公告)日：2001-10-09
申请号：US09193262
申请日：1998-11-18
申请人： H. Jim Fulford , Jon Cheek , Derick J. Wristers , James Buller
发明人： H. Jim Fulford , Jon Cheek , Derick J. Wristers , James Buller
IPC分类号： H01L21336
CPC分类号： H01L29/6653 , H01L21/26586 , H01L29/1083 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： One method of making a semiconductor device includes forming a gate electrode on a substrate and forming a spacer on a sidewall of the gate electrode. An active region is then formed in the substrate and adjacent to the spacer, but spaced apart from the gate electrode, using a first dopant material. A halo region is formed in the substrate under the spacer and adjacent to the active region using a second dopant material of a conductivity type different than the first dopant material. The halo region may be formed by implanting the second dopant region into the substrate at an angle substantially less than 90° relative to a surface of the substrate. A portion of the spacer is then removed and a lightly-doped region is formed in the substrate adjacent to the active region and the gate electrode and shallower than the halo region using a third dopant material of a same conductivity type as the first dopant material.
摘要翻译：制造半导体器件的一种方法包括在衬底上形成栅电极并在栅电极的侧壁上形成间隔物。然后，使用第一掺杂剂材料，在衬底中形成有源区并与间隔物相邻，但与栅电极间隔开。使用不同于第一掺杂剂材料的导电类型的第二掺杂剂材料，在间隔物下方的衬底中形成晕圈区域并与有源区相邻。可以通过相对于衬底的表面以相对小于90°的角度将第二掺杂剂区域注入到衬底中来形成晕圈区域。然后去除间隔物的一部分，并且使用与第一掺杂剂材料相同的导电类型的第三掺杂剂材料，在邻近有源区和栅电极的衬底中形成轻掺杂区域，并且比晕区浅。

2. 发明授权

US4060961A Crop harvesting rotor 失效
标题翻译：作物收获转子
公开(公告)号：US4060961A
公开(公告)日：1977-12-06
申请号：US660613
申请日：1976-02-23
申请人： John Dale Anderson , Richard James Buller , Allen Thomas Trego
发明人： John Dale Anderson , Richard James Buller , Allen Thomas Trego
IPC分类号： A01D34/535 , A01D55/20
CPC分类号： A01D34/535
摘要： A rotor for crop handling machines has a plurality of double-pivoted, radially-extending arms and structure on the segments of each arm to position the segments such that any radially inwardly directed impact force, such as from stones and other obstructions, causes immediate buckling of the arm about its pivot points instead of fracturing the segments or bending their mounting pins. In one embodiment, each arm is provided with a positive stop between the segments that holds them in a pre-buckled condition such that the tip of the outer segment, with respect to the direction of rotation of the rotor, trails the common plane containing the pivotal axes of the double-pivoted arm. In a second embodiment the individual segments are constructed such that their centers of gravity are laterally offset, with respect to one another, causing the desired trailing relationship of the tip of the outer segment.
摘要翻译：用于作物处理机器的转子具有多个双重枢转的径向延伸的臂并且在每个臂的段上结构以定位段，使得任何径向向内的冲击力，例如从石头和其它障碍物引起立即屈曲的臂绕其枢轴点，而不是压裂段或弯曲其安装销。在一个实施例中，每个臂在两个段之间设置有一个止挡件，该止挡件将它们保持在预弯曲的状态，使得外部段的尖端相对于转子的旋转方向沿着包含双转臂的枢轴。在第二实施例中，各个段被构造成使得它们的重心相对于彼此横向偏移，导致外部段的尖端的期望的拖尾关系。

3. 发明授权

US4033101A Continuous load stack-forming method and machine 失效
标题翻译：连续负载堆叠成型方法和机器
公开(公告)号：US4033101A
公开(公告)日：1977-07-05
申请号：US604310
申请日：1975-08-13
申请人： David Paul Fritz , John Dale Anderson , Martin Eugene Pruitt , Deroy Ernest Mahagan , Richard James Buller
发明人： David Paul Fritz , John Dale Anderson , Martin Eugene Pruitt , Deroy Ernest Mahagan , Richard James Buller
IPC分类号： A01D85/00 , A01D87/10
CPC分类号： A01D85/004
摘要： In the interval between successive press cycles, crop material is picked up from the field and loaded into the stack-forming body of the machine. However, upon initiation of a press cycle, crop material, which continues to be picked up as the machine is advanced, is diverted into an accumulating chamber and collected within the latter until termination of the press cycle. Thereupon, the accumulation is discharged for recycling through the pickup and loading mechanism to be delivered into the forming body along with previously uncycled material. Alternative embodiments involve discharging the accumulation onto the ground ahead of the loader for pickup by the latter a second time, and discharging the accumulation either directly into the front or rear of the loader at a point above the ground.
摘要翻译：在连续按压循环之间的间隔中，裁剪材料从现场拾取并装载到机器的堆叠成形体中。然而，在冲压循环开始时，当机器前进时继续拾取的作物材料被转移到积聚室中并收集在其中，直到结束压榨循环。因此，通过拾取和装载机构将积聚物排出以便再循环，以便与先前未旋转的材料一起被输送到成形体中。替代实施例涉及将堆积物排放到装载机前面的地面上，以便第二次将其堆放在地面上，并将堆积物在地面上方的一个点处直接排放到装载机的前部或后部。

4. 发明授权

US08962420B2 Semiconductor device comprising a buried poly resistor 有权
标题翻译：半导体器件包括埋入的多晶硅电阻器
公开(公告)号：US08962420B2
公开(公告)日：2015-02-24
申请号：US12553475
申请日：2009-09-03
申请人： Andreas Kurz , Roman Boschke , James Buller , Andy Wei
发明人： Andreas Kurz , Roman Boschke , James Buller , Andy Wei
IPC分类号： H01L21/8234 , H01L21/8244 , H01L27/06 , H01L21/84 , H01L27/12 , H01L49/02
CPC分类号： H01L27/0629 , H01L21/84 , H01L27/1203 , H01L28/20
摘要： An embedded or buried resistive structure may be formed by amorphizing a semiconductor material and subsequently re-crystallizing the same in a polycrystalline state, thereby providing a high degree of compatibility with conventional polycrystalline resistors, such as polysilicon resistors, while avoiding the deposition of a dedicated polycrystalline material. Hence, polycrystalline resistors may be advantageously combined with sophisticated transistor architectures based on non-silicon gate electrode materials, while also providing high performance of the resistors with respect to the parasitic capacitance.
摘要翻译：嵌入或埋入的电阻结构可以通过半导体材料的非晶化并随后在多晶态中重新结晶而形成，从而提供与诸如多晶硅电阻器的常规多晶电阻器的高度兼容性，同时避免专用多晶材料。因此，多晶电阻器可以有利地与基于非硅栅电极材料的复杂晶体管架构组合，同时还提供相对于寄生电容的电阻器的高性能。

5. 发明授权

US06654998B1 Method of installing plates on blade of plow or grader 失效
标题翻译：在犁或分级机的叶片上安装板的方法
公开(公告)号：US06654998B1
公开(公告)日：2003-12-02
申请号：US09502680
申请日：2000-02-11
申请人： Brian James Berdan , Brian C. Peterson , Walter James Buller
发明人： Brian James Berdan , Brian C. Peterson , Walter James Buller
IPC分类号： B23Q300
CPC分类号： B62B3/108 , B62B2203/10 , B66F5/04 , Y10S269/905 , Y10T29/49895
摘要： A cart is configured to handle replaceable plates used on the blade of a plow or grader. The cart includes a wheeled frame and a plate holder configured to support the plate lengthwise in a generally upright orientation. The plate holder is supported on the frame by a parallelogram linkage that permits adjustment of the plate holder, and thereby the plate carried by the holder, without varying the orientation of these components. An inventive plate installation method is also disclosed. The method involves placing at least one plate on the height-adjustable plate holder carried on the mobile frame. The attachment holes defined in the plate are then aligned with the attachment holes defined in the blade.
摘要翻译：推车被配置为处理在犁或分级机的叶片上使用的可更换的板。推车包括轮式框架和板保持器，其被构造成以大致直立的方向纵向地支撑板。板支架通过平行四边形连杆支撑在框架上，允许调节板保持器，从而调节支架承载的板，而不改变这些构件的取向。还公开了一种创新的板安装方法。该方法包括将至少一个板放置在携带在移动框架上的高度可调平板支架上。然后将限定在板中的附接孔与限定在叶片中的附接孔对齐。

6. 发明申请

US20100078645A1 SEMICONDUCTOR DEVICE COMPRISING A BURIED POLY RESISTOR 有权
标题翻译：包含一个多层聚电阻的半导体器件
公开(公告)号：US20100078645A1
公开(公告)日：2010-04-01
申请号：US12553475
申请日：2009-09-03
申请人： Andreas Kurz , Roman Boschke , James Buller , Andy Wei
发明人： Andreas Kurz , Roman Boschke , James Buller , Andy Wei
IPC分类号： H01L29/786 , H01L21/336 , H01L27/06
CPC分类号： H01L27/0629 , H01L21/84 , H01L27/1203 , H01L28/20
摘要： An embedded or buried resistive structure may be formed by amorphizing a semiconductor material and subsequently re-crystallizing the same in a polycrystalline state, thereby providing a high degree of compatibility with conventional polycrystalline resistors, such as polysilicon resistors, while avoiding the deposition of a dedicated polycrystalline material. Hence, polycrystalline resistors may be advantageously combined with sophisticated transistor architectures based on non-silicon gate electrode materials, while also providing high performance of the resistors with respect to the parasitic capacitance.
摘要翻译：嵌入或埋入的电阻结构可以通过半导体材料的非晶化并随后在多晶态中重新结晶而形成，从而提供与诸如多晶硅电阻器的常规多晶电阻器的高度兼容性，同时避免专用多晶材料。因此，多晶电阻器可以有利地与基于非硅栅电极材料的复杂晶体管架构组合，同时还提供相对于寄生电容的电阻器的高性能。

7. 发明授权

US06241227B1 Cutting edge handler for plows and graders 失效
标题翻译：犁耕和分级机的前沿处理机
公开(公告)号：US06241227B1
公开(公告)日：2001-06-05
申请号：US09248586
申请日：1999-02-11
申请人： Brian James Berdan , Brian C. Peterson , Walter James Buller
发明人： Brian James Berdan , Brian C. Peterson , Walter James Buller
IPC分类号： B25B100
CPC分类号： B62B3/108 , B62B2203/10 , B66F5/04 , Y10S269/905 , Y10T29/49895
摘要： A cart is configured to handle replaceable plates used on the blade of a plow or grader. The cart includes a wheeled frame and a plate holder configured to support the plate lengthwise in a generally upright orientation. The plate holder is supported on the frame by a parallelogram linkage that permits adjustment of the plate holder, and thereby the plate carried by the holder, without varying the orientation of these components. An inventive plate installation method is also disclosed. The method involves placing at least one plate on the height-adjustable plate holder carried on the mobile frame. The attachment holes defined in the plate are then aligned with the attachment holes defined in the blade.
摘要翻译：推车被配置为处理在犁或分级机的叶片上使用的可更换的板。推车包括轮式框架和板保持器，其被构造成以大致直立的方向纵向地支撑板。板支架通过平行四边形连杆支撑在框架上，允许调节板保持器，从而调节支架承载的板，而不改变这些构件的取向。还公开了一种创新的板安装方法。该方法包括将至少一个板放置在携带在移动框架上的高度可调平板支架上。然后将限定在板中的附接孔与限定在叶片中的附接孔对齐。

8. 发明授权

US6114211A Semiconductor device with vertical halo region and methods of manufacture 有权
标题翻译：具有垂直卤区的半导体器件及其制造方法
公开(公告)号：US6114211A
公开(公告)日：2000-09-05
申请号：US195336
申请日：1998-11-18
申请人： H. Jim Fulford , Jon Cheek , Derick J. Wristers , James Buller
发明人： H. Jim Fulford , Jon Cheek , Derick J. Wristers , James Buller
IPC分类号： H01L21/336 , H01L29/10
CPC分类号： H01L29/66492 , H01L29/1083 , H01L29/6653 , H01L29/6659
摘要： One method of forming a semiconductor device includes forming a gate electrode on a substrate and then forming a spacer adjacent to a sidewall of the gate electrode. An active region is formed in the substrate adjacent to the spacer and spaced apart from the gate electrode using a first dopant material of a first conductivity type. A protecting layer is formed over the active region and adjacent to the spacer. At least a portion of the spacer is then removed to form an opening between the protecting layer and the gate electrode. In some instances, the spacer may be formed by independent deposition of two different materials (e.g., silicon nitride and silicon dioxide), one of which can be selectively removed with respect to the other. A lightly-doped region is formed in the substrate adjacent to the gate electrode using a second dopant material of the first conductivity type. This lightly-doped region may be formed, for example, prior to formation of the spacer, between the formation of two portions of the spacer, or after removing at least a portion of the spacer. A halo region is formed through the opening resulting from removing a portion of the spacer. The halo region is deeper in the substrate than the lightly-doped region and is adjacent to the active region. The halo region is formed using a third dopant material of a conductivity type different than the first conductivity type.
摘要翻译：形成半导体器件的一种方法包括在衬底上形成栅电极，然后形成与栅电极的侧壁相邻的间隔物。使用第一导电类型的第一掺杂剂材料，在与衬垫相邻的衬底中形成有源区，并与栅电极间隔开。保护层形成在有源区上并与隔片相邻。然后去除间隔物的至少一部分以在保护层和栅电极之间形成开口。在一些情况下，可以通过独立沉积两种不同材料（例如，氮化硅和二氧化硅）来形成隔离物，其中一种可以相对于另一种材料选择性地去除。使用第一导电类型的第二掺杂剂材料在与栅电极相邻的衬底中形成轻掺杂区域。该轻掺杂区域例如可以在形成间隔物之前，在间隔物的两个部分的形成之间或在移除间隔物的至少一部分之后形成。通过从隔离物的一部分去除而形成的晕圈形成。卤素区域在衬底中比轻掺杂区域更深，并且与有源区域相邻。卤素区域是使用不同于第一导电类型的导电类型的第三掺杂剂材料形成的。

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