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1. 发明申请

US20100178764A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100178764A1
公开(公告)日：2010-07-15
申请号：US12686841
申请日：2010-01-13
申请人： Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
发明人： Kenji NARITA , Yoshiharu Hidaka , Koji Utaka , Takao Yamaguchi , Itaru Kanno , Hirokazu Kurisu
IPC分类号： H01L21/3205
CPC分类号： H01L21/2855 , H01L21/02068 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：（a）在具有含硅的半导体层的基板上或在基板上形成含有硅的导电膜上形成含有贵金属的金属膜，（b）在步骤 a），对基材进行热处理以使贵金属与硅反应以在基材或导电膜上形成含有贵金属的硅化物膜，（c）在步骤（b）之后，在一部分上形成氧化膜使用第一化学溶液在贵金属的未反应部分下面的硅化物膜，和（d）使用第二化学溶液溶解贵金属的未反应部分。

2. 发明授权

US07250391B2 Cleaning composition for removing resists and method of manufacturing semiconductor device 失效
标题翻译：用于除去抗蚀剂的清洁组合物和制造半导体器件的方法
公开(公告)号：US07250391B2
公开(公告)日：2007-07-31
申请号：US10617128
申请日：2003-07-11
申请人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
发明人： Itaru Kanno , Yasuhiro Asaoka , Masahiko Higashi , Yoshiharu Hidaka , Etsuro Kishio , Tetsuo Aoyama , Tomoko Suzuki , Toshitaka Hiraga , Toshihiko Nagai
IPC分类号： C11D7/50
CPC分类号： H01L21/02063 , G03F7/423 , G03F7/425 , H01L21/31116 , H01L21/76807 , H01L21/76814 , H01L21/76831 , H01L21/76838
摘要： The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.
摘要翻译：用于除去抗蚀剂的清洁组合物包括氢氟酸盐和不含金属的基质（A组分），水溶性有机溶剂（B1组分），至少一种有机酸或无机酸（C组分），水（ D成分）和任选的铵盐（E1成分），pH4〜8。因此，在制造诸如铜互连工艺的半导体器件时，蚀刻或灰化后除去抗蚀剂残留物和其它蚀刻残留物的效率提高，铜和绝缘膜的耐腐蚀性也得到改善。

3. 发明授权

US06713232B2 Method of manufacturing semiconductor device with improved removal of resist residues 失效
标题翻译：制造具有改善抗蚀剂残留物去除的半导体器件的方法
公开(公告)号：US06713232B2
公开(公告)日：2004-03-30
申请号：US09727542
申请日：2000-12-04
申请人： Seiji Muranaka , Itaru Kanno , Mami Shirota , Junji Kondo
发明人： Seiji Muranaka , Itaru Kanno , Mami Shirota , Junji Kondo
IPC分类号： G03C500
CPC分类号： H01L21/02071 , G03F7/426 , H01L21/31133 , H01L21/76802 , H01L21/76838
摘要： Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO2 are exposed on the surface of a wafer after etching of a metal gate.
摘要翻译：通过使用单一化学物质去除在形成Al互连的过程中形成的抗蚀剂残留物。使用含有有机酸或其盐和水并且pH低于8的化学物质作为去除抗蚀剂或抗蚀剂残留物的处理。该化学品可用于在Al互连之后Al，W，Ti，TiN和SiO2暴露在晶片表面上的工艺中; 在蚀刻在电介质层中达到Al互连的孔之后，在晶片表面上露出Al，W，Ti，TiN和SiO 2的工艺中，在Cu互连的干蚀刻或Cu互连上的层间电介质膜的蚀刻之后，在半导体晶片的表面上露出Cu的工序; 并且在诸如W，WN，Ti或TiN的金属材料的过程中，多晶硅; 罪; 并且在蚀刻金属栅极之后，在晶片的表面上露出SiO 2。

4. 发明授权

US5873380A Wafer cleaning apparatus 失效
标题翻译：晶圆清洗设备
公开(公告)号：US5873380A
公开(公告)日：1999-02-23
申请号：US583582
申请日：1996-01-05
申请人： Itaru Kanno
发明人： Itaru Kanno
IPC分类号： B08B3/02 , B05B1/26 , B05B5/08 , B05B7/00 , B08B7/02 , H01L21/00 , H01L21/304
CPC分类号： H01L21/6715 , B08B3/02 , B08B7/028 , H01L21/67051 , Y10S134/902
摘要： A cleaning apparatus is provided which removes contaminants sticking onto a wafer without damaging a device. The cleaning apparatus includes liquid supply means 23 for supplying a liquid not reactive to material constituting a wafer 1, and droplet forming means 10 for interrupting the liquid supplied from liquid supply means 23 to form a droplet 21 out of the liquid. The cleaning apparatus further includes spurting means 22 for spurting the droplet 21 toward the surface of wafer 1.
摘要翻译：提供一种清洁装置，其清除粘附在晶片上的污染物，而不损坏装置。清洗装置包括用于供给不对构成晶片1的材料无反应性的液体的液体供给装置23以及用于中断从液体供应装置23供应的液体以形成液体21的液滴21的液滴形成装置10。清洁装置还包括喷射装置22，用于将液滴21喷射到晶片1的表面。

5. 发明授权

US06358329B1 Resist residue removal apparatus and method 失效
标题翻译：抗蚀剂去除装置及方法
公开(公告)号：US06358329B1
公开(公告)日：2002-03-19
申请号：US09342536
申请日：1999-06-29
申请人： Seiji Muranaka , Itaru Kanno
发明人： Seiji Muranaka , Itaru Kanno
IPC分类号： B08B300
CPC分类号： H01L21/02054 , B08B3/08 , H01L21/67028 , H01L21/76838
摘要： The resist residue removal method removes resist residues caused at the time of formation of an aluminum wiring pattern on a semiconductor wafer. The method includes the steps of removal fluid processing, washing, and drying. The method involves forming an atmosphere within a chamber, which houses a semiconductor wafer having an exposed aluminum wiring pattern, by controlling gas flow into the chamber according to the processing step being performed. By the resist residue removal method, yield of a wiring pattern is improved by prevention of local etching of an aluminum wiring pattern, or by prevention of thinning of the aluminum wiring pattern.
摘要翻译：抗蚀剂残渣除去方法去除在半导体晶片上形成铝布线图形时产生的抗蚀剂残留物。该方法包括去除流体处理，洗涤和干燥的步骤。该方法包括通过根据正在执行的处理步骤控制气体流入室中，在室内形成容纳具有暴露的铝布线图案的半导体晶片的气氛。通过抗蚀剂残渣除去方法，通过防止铝布线图案的局部蚀刻，或通过防止铝布线图案的变薄来提高布线图案的产量。

6. 发明授权

US5357718A Wafer rinsing apparatus 失效
标题翻译：晶圆漂洗装置
公开(公告)号：US5357718A
公开(公告)日：1994-10-25
申请号：US45162
申请日：1993-04-12
申请人： Itaru Kanno
发明人： Itaru Kanno
IPC分类号： B08B7/02 , B24C1/00 , B24C3/32 , H01L21/304
CPC分类号： B24C1/003 , B24C3/322
摘要： A wafer rinsing apparatus includes an ice making hopper for making ice particles by heat exchange between fine droplets of liquid to be frozen and low-temperature liquefied gas. The ice making hopper is connected to a separation device for separating the ice particles and vaporized gas generated from the low-temperature liquefied gas. The ice particles separated by the separation device are jetted onto a wafer by a jetting device, thereby rinsing the surface of the wafer.
摘要翻译：晶片冲洗装置包括用于通过在待冷冻液体的微小液滴与低温液化气体之间的热交换来制造冰粒的制冰斗。制冰斗连接到分离装置，用于分离由低温液化气产生的冰颗粒和汽化气体。由分离装置分离的冰颗粒通过喷射装置喷射到晶片上，从而漂洗晶片的表面。

7. 发明授权

US5216890A Device for and method of producing hyperfine frozen particles 失效
标题翻译：制造高温冷冻颗粒的装置和方法
公开(公告)号：US5216890A
公开(公告)日：1993-06-08
申请号：US846010
申请日：1992-03-04
申请人： Cozy Ban , Itaru Kanno , Takaaki Fukumoto
发明人： Cozy Ban , Itaru Kanno , Takaaki Fukumoto
IPC分类号： B01D7/02 , F25C1/00
CPC分类号： B01D7/02 , F25C1/00
摘要： A device for and a method of producing hyperfine frozen particles reduces the quantity of impurity particles in the hyperfine frozen particles produced and stabilizes the generation of hyperfine frozen particles. A hopper includes a heat exchanger through which a coolant, such as nitrogen gas or liquid nitrogen, is circulated. A nitrogen gas inlet through which low temperature nitrogen gas as a coolant is supplied includes a filter to produce a laminar flow of the gas.
摘要翻译：用于制造超细冷冻颗粒的装置和方法减少了产生的超细冷冻颗粒中的杂质颗粒的数量，并且稳定了超细冷冻颗粒的产生。料斗包括热交换器，诸如氮气或液氮的冷却剂通过该热交换器循环。供给作为冷却剂的低温氮气的氮气入口包括产生气体层流的过滤器。

8. 发明授权

US5147466A Method of cleaning a surface by blasting the fine frozen particles against the surface 失效
标题翻译：通过喷射表面上的微细冷冻颗粒来清洁表面的方法
公开(公告)号：US5147466A
公开(公告)日：1992-09-15
申请号：US588806
申请日：1990-09-27
申请人： Toshiaki Ohmori , Itaru Kanno , Takaaki Fukumoto
发明人： Toshiaki Ohmori , Itaru Kanno , Takaaki Fukumoto
IPC分类号： B08B7/00 , B24C1/00 , H01L21/304
CPC分类号： B24C1/086 , B08B7/0092 , B24C1/003
摘要： To remove foreign matter (contaminants in the form of fine particles or a film of oil) deposited on a solid surface, fine frozen particles (0.01 .mu.m to 5 mm in diameter) are used. The fine frozen particles, together with chilled nitrogen, are jetted onto the surface of a solid by the pressure of a carrier gas (nitrogen (N.sub.2) gas). These fine frozen particles are produced by freezing a liquid such as water (super pure water) or alcohol. The hardness of the fine frozen particles is adjusted according to the type of liquid, the frozen freezing temperature and jetting temperature in order to control the damage to the surface of the solid. Low temperature cleaning (0.degree. to -150.degree. C.) in which fine frozen particles and chilled nitrogen are sprayed is achieved.
摘要翻译：为了除去沉积在固体表面上的杂质（微细颗粒或油膜的污染物），使用细小的冷冻颗粒（直径为0.01μm至5mm）。精细的冷冻颗粒与冷却的氮气一起通过载气（氮气（N 2）气）的压力喷射到固体的表面上。这些细小的冷冻颗粒是通过冷冻诸如水（超纯水）或醇的液体来制备的。根据液体的类型，冷冻的冻结温度和喷射温度来调节细小的冷冻颗粒的硬度，以便控制对固体表面的损伤。实现了低温清洗（0〜-150℃），其中喷洒细微的冷冻颗粒和冷却氮气。

9. 发明授权

US5114748A Method of preparing or rubbing a substrate to be used in a LCD device by spraying it with uniformly sized droplets or frozen water 失效
标题翻译：在液晶显示装置中通过喷洒均匀的液体或冷冻水来制备或润滑基板的方法
公开(公告)号：US5114748A
公开(公告)日：1992-05-19
申请号：US647478
申请日：1990-11-29
申请人： Masuo Tada , Hiroi Takahiko , Takaaki Fukumoto , Toshiaki Ohmori , Itaru Kanno
发明人： Masuo Tada , Hiroi Takahiko , Takaaki Fukumoto , Toshiaki Ohmori , Itaru Kanno
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , Y10T428/1086
摘要： A method in which a liquid is sprayed through a nozzle to form minute droplets of substantially uniform size. These uniform droplets are sprayed into and frozen by a refrigeration medium, such as liquid nitrogen, to form uniform diameter frozen particles. The frozen particles are ejected onto the surface of a substrate used in a liquid crystal display device to orient the liquid crystal material applied to the surface.
摘要翻译：通过喷嘴喷射液体以形成基本均匀尺寸的微小液滴的方法。将这些均匀的液滴喷入冷冻介质如液氮并冷冻，以形成均匀直径的冷冻颗粒。将冷冻的颗粒喷射到用于液晶显示装置的基板的表面上以使施加到表面上的液晶材料定向。

10. 发明申请

US20120258576A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120258576A1
公开(公告)日：2012-10-11
申请号：US13438972
申请日：2012-04-04
申请人： Itaru KANNO
发明人： Itaru KANNO
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823468 , H01L21/823418 , H01L21/823814 , H01L21/823864 , H01L29/6653
摘要： A manufacturing method of a semiconductor device is provided which can improve the performance of the semiconductor device. Ion implantation is applied to nMIS regions 1A and 1B and pMIS regions 1C and 1D of a semiconductor substrate 1 with offset spacers formed over sidewalls of gate electrodes GE1, GE2, GE3, and GE4 to thereby form extension regions for source and drain. In this case, a different photoresist pattern is used for each of the nMIS regions 1A and 1B and the pMIS regions 1C and 1D to individually perform the corresponding ion implantation. Every time the photoresist pattern is re-created, the offset spacer is also re-created.
摘要翻译：提供一种可以提高半导体器件的性能的半导体器件的制造方法。将离子注入施加到半导体衬底1的nMIS区域1A和1B以及pMIS区域1C和1D，其中半导体衬底1具有形成在栅电极GE1，GE2，GE3和GE4的侧壁上的偏移间隔物，从而形成用于源极和漏极的延伸区域。在这种情况下，对于nMIS区域1A和1B以及pMIS区域1C和1D中的每一个使用不同的光致抗蚀剂图案来单独执行相应的离子注入。每次重新制造光致抗蚀剂图案时，也重新创建偏移间隔物。

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