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    • 4. 发明申请
    • METHOD FOR CLEANING A SEMICONDUCTOR DEVICE
    • 清洁半导体器件的方法
    • US20100330794A1
    • 2010-12-30
    • US12819675
    • 2010-06-21
    • Hirokazu KURISUYutaka TakeshimaItaru KannoMasahiko HigashiYusaku Hirota
    • Hirokazu KURISUYutaka TakeshimaItaru KannoMasahiko HigashiYusaku Hirota
    • H01L21/28H01L21/306
    • H01L21/02063H01L21/28518H01L21/76831H01L21/76895
    • There is provided a method for cleaning a semiconductor device capable of making compatible the inhibition of dissolution of a gate metal material and the acquisition of a favorable contact resistance. A method for cleaning a semiconductor device includes steps: a semiconductor substrate including silicon, and having a main surface is prepared; a multilayer gate including a metal layer and a silicon layer stacked sequentially from the bottom is formed over the main surface; a silicide layer is formed over the main surface and the silicon layer surface; an insulation layer is formed over the silicide layer in each of the main surface and the multilayer gate surface; a shared contact hole is formed in the insulation layer in such a manner that the silicide layer in the main surface of the semiconductor substrate and the surface of the multilayer gate is exposed from the insulation layer; and the shared contact hole is subjected to sulfuric acid cleaning, aqueous hydrogen peroxide cleaning, and APM cleaning separately, respectively, thereby to remove an altered layer formed in the shared contact hole.
    • 提供了一种能够使与栅极金属材料的溶解的抑制兼容并且获得良好的接触电阻的半导体器件的清洁方法。 一种清洗半导体器件的方法,包括步骤:制备包括硅并具有主表面的半导体衬底; 在主表面上形成包括从底部依次堆叠的金属层和硅层的多层栅极; 在主表面和硅层表面上形成硅化物层; 在主表面和多层栅极表面中的每一个中的硅化物层上形成绝缘层; 在绝缘层中形成共享接触孔,使得半导体衬底的主表面中的硅化物层和多层栅极的表面从绝缘层露出; 分别对共用接触孔进行硫酸清洗,过氧化氢水清洗和APM清洗,从而除去形成在共用接触孔中的变化层。