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1. 发明授权

US08503225B2 Multibit cell with synthetic storage layer 有权
标题翻译：具有合成存储层的多位单元
公开(公告)号：US08503225B2
公开(公告)日：2013-08-06
申请号：US13475215
申请日：2012-05-18
申请人： Lucien Lombard , Ioan Lucian Prejbeanu
发明人： Lucien Lombard , Ioan Lucian Prejbeanu
IPC分类号： G11C11/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： Method for writing and reading more than two data bits to a MRAM cell comprising a magnetic tunnel junction formed from a read magnetic layer having a read magnetization, and a storage layer comprising a first storage ferromagnetic layer having a first storage magnetization, a second storage ferromagnetic layer having a second storage magnetization; the method comprising: heating the magnetic tunnel junction above a high temperature threshold; and orienting the first storage magnetization at an angle with respect to the second storage magnetization such that the magnetic tunnel junction reaches a resistance state level determined by the orientation of the first storage magnetization relative to that of the read magnetization. The method allows for storing at least four distinct state levels in the MRAM cell using only one current line to generate a writing field.
摘要翻译：一种用于将多于两个数据位写入和读取到MRAM单元的方法，所述MRAM单元包括由具有读磁化的读磁层形成的磁隧道结，以及存储层，包括具有第一存储磁化的第一存储铁磁层，第二存储铁磁层具有第二存储磁化; 所述方法包括：将所述磁性隧道结加热至高于温度阈值以上; 以及使所述第一存储磁化相对于所述第二存储磁化成一定角度，使得所述磁隧道结达到由所述第一存储磁化相对于所述读取磁化的取向所确定的电阻状态水平。该方法允许仅使用一条当前行在MRAM单元中存储至少四个不同的状态级别来生成写入字段。

2. 发明授权

US07957181B2 Magnetic tunnel junction magnetic memory 有权
标题翻译：磁隧道结磁记忆体
公开(公告)号：US07957181B2
公开(公告)日：2011-06-07
申请号：US12059869
申请日：2008-03-31
申请人： Jean-Pierre Nozieres , Ricardo Sousa , Bernard Dieny , Olivier Redon , Ioan Lucian Prejbeanu
发明人： Jean-Pierre Nozieres , Ricardo Sousa , Bernard Dieny , Olivier Redon , Ioan Lucian Prejbeanu
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10 , Y10S977/933 , Y10S977/935
摘要： This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.
摘要翻译：这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

3. 发明授权

US08609439B2 Magnetic tunnel junction comprising a polarizing layer 有权
标题翻译：包括偏振层的磁隧道结
公开(公告)号：US08609439B2
公开(公告)日：2013-12-17
申请号：US13348996
申请日：2012-01-12
申请人： Ioan Lucian Prejbeanu , Ricardo Sousa
发明人： Ioan Lucian Prejbeanu , Ricardo Sousa
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell.
摘要翻译：本公开涉及包括磁隧道结的存储器件，其包括在具有固定取向的第一磁化的第一铁磁层和具有可自由取向的第二磁化的第二铁磁层之间的隧道势垒层，以及具有基本上垂直于第一和第二磁化; 第一和第二铁磁层被退火，使得磁性隧道结的隧道磁阻等于或大于约150％。还公开了形成MRAM单元的方法。

4. 发明授权

US08228716B2 Magnetic element with thermally assisted writing 有权
标题翻译：具有热辅助写入的磁性元件
公开(公告)号：US08228716B2
公开(公告)日：2012-07-24
申请号：US12872873
申请日：2010-08-31
申请人： Jean-Pierre Nozières , Ioan Lucian Prejbeanu
发明人： Jean-Pierre Nozières , Ioan Lucian Prejbeanu
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675
摘要： Magnetic element with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, comprising: a reference magnetic layer having a fixed direction magnetization; a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer; a tunnel barrier, provided between the reference layer and the storage layer; wherein the magnetic reference layer, and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element. The magnetic element disclosed herein has a voltage gain of typically 10 to 50% compared to conventional magnetic elements and shows a reduction of the stress induced during a writing operation as well as a reduction of the aging.
摘要翻译：具有热辅助磁场写入或热辅助自旋转移写入的磁性元件，包括：具有固定方向磁化的参考磁性层; 与反铁磁层交换固定的存储磁性层，其中当所述元件可被加热到至少高于反铁磁性层的临界温度的温度时，存储层的磁化方向可以变化; 设置在参考层和存储层之间的隧道势垒; 其中所述磁参考层和/或所述磁存储层包括用于加热所述磁性元件的至少一个电阻薄层。本文公开的磁性元件与常规磁性元件相比具有典型的10至50％的电压增益，并且显示了在写入操作期间引起的应力的减小以及老化的减少。

5. 发明申请

US20120155159A1 MULTIBIT MAGNETIC RANDOM ACCESS MEMORY CELL WITH IMPROVED READ MARGIN 有权
标题翻译：多位磁性随机访问存储器单元，具有改进的读取标准
公开(公告)号：US20120155159A1
公开(公告)日：2012-06-21
申请号：US13326439
申请日：2011-12-15
申请人： Ioan Lucian Prejbeanu
发明人： Ioan Lucian Prejbeanu
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/5607 , G11C11/5685 , G11C13/0002
摘要： A magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a tunnel barrier layer between a first magnetic layer having a first magnetization direction, and a second magnetic layer having a second adjustable magnetization to vary a junction resistance of the magnetic tunnel junction from a first to a second junction resistance level; said magnetic tunnel junction further including a switching resistant element electrically connected to the magnetic tunnel junction and having a switching resistance switchable from a first to a second switching resistance level when a switching current is passed through the switching resistant element, such that a resistance of the MRAM cell can have at least four different cell resistance levels depending of the resistance level of the junction resistance and the switching resistance. The disclosed MRAM cell achieves improved read margin and allows for writing at least four different cell resistance levels.
摘要翻译：一种磁性随机存取存储器（MRAM）单元，包括在具有第一磁化方向的第一磁性层之间包括隧道阻挡层的磁性隧道结和具有第二可调磁化的第二磁性层，以改变磁性隧道结的结电阻从第一到第二结阻水平; 所述磁性隧道结还包括电连接到磁性隧道结的切换电阻元件，并且具有当开关电流通过开关电阻元件时从第一开关电阻电平切换到第二开关电阻电平的开关电阻，使得取决于结电阻和开关电阻的电阻水平，MRAM单元可以具有至少四个不同的电池电阻水平。所公开的MRAM单元实现了改善的读取余量并且允许写入至少四个不同的单元电阻级别。

6. 发明申请

US20060291276A1 Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same 有权
标题翻译：具有以热辅助方式写入的磁性隧道结的磁存储器及其写入方法
公开(公告)号：US20060291276A1
公开(公告)日：2006-12-28
申请号：US11483425
申请日：2006-07-07
申请人： Jean-Pierre Nozieres , Bernard Dieny , Olivier Redon , Ricardo Sousa , Ioan-Lucian Prejbeanu
发明人： Jean-Pierre Nozieres , Bernard Dieny , Olivier Redon , Ricardo Sousa , Ioan-Lucian Prejbeanu
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675 , G11C11/5607
摘要： The invention relates to a magnetic memory written in a thermally assisted manner, each memory point (40) consisting of a magnetic tunnel junction, and the cross-section of the memory parallel to the plane of the layers forming the tunnel junction being circular or essentially circular. Said tunnel junction comprises at least one trapped layer (44) with a fixed magnetisation direction, a free layer (42) with a variable magnetisation direction, and an insulating layer (43) arranged between the free layer (42) and the trapped layer (44). According to the invention, the free layer (42) is formed from at least one soft magnetic layer and a trapped layer (41), said two layers being magnetically coupled by contact, and the operating temperature of the reading memory or resting memory is selected in such a way that it is lower than the blocking temperature of the respectively free and trapped layers.
摘要翻译：本发明涉及以热辅助方式写入的磁存储器，每个存储点（40）由磁性隧道结组成，并且存储器的横截面平行于形成隧道结的层的平面为圆形或基本上圆。所述隧道结包括具有固定磁化方向的至少一个捕获层（44），具有可变磁化方向的自由层（42）和布置在所述自由层（42）和所述被俘获层之间的绝缘层（43） 44）。根据本发明，自由层（42）由至少一个软磁层和捕获层（41）形成，所述两层通过接触磁耦合，并且选择读取存储器或休息存储器的工作温度使其低于分别游离和捕获的层的阻挡温度。

7. 发明授权

US09886989B2 Low power magnetic random access memory cell 有权
公开(公告)号：US09886989B2
公开(公告)日：2018-02-06
申请号：US13352706
申请日：2012-01-18
申请人： Clarisse Ducruet , Céline Portemont , Ioan Lucian Prejbeanu
发明人： Clarisse Ducruet , Céline Portemont , Ioan Lucian Prejbeanu
IPC分类号： H01L29/82 , G11C11/16
CPC分类号： G11C11/161 , G11C11/1675
摘要： The present disclosure concerns a magnetic random access memory (MRAM) cell suitable for performing a thermally assisted write operation or a spin torque transfer (STT) based write operation, comprising a magnetic tunnel junction comprising a top electrode; a tunnel barrier layer comprised between a first ferromagnetic layer having a first magnetization direction, and a second ferromagnetic layer having a second magnetization direction adjustable with respect to the first magnetization direction; a front-end layer; and a magnetic or metallic layer on which the second ferromagnetic layer is deposited; the second ferromagnetic layer being comprised between the front-end layer and the tunnel barrier layer and having a thickness comprised between about 0.5 nm and about 2 nm, such that magnetic tunnel junction has a magnetoresistance larger than about 100%. The MRAM cell disclosed herein has lower power consumption compared to conventional MRAM cells.

8. 发明申请

US20130234266A1 MAGNETIC TUNNEL JUNCTION WITH AN IMPROVED TUNNEL BARRIER 有权
标题翻译：具有改进的隧道式障碍物的磁性隧道连接
公开(公告)号：US20130234266A1
公开(公告)日：2013-09-12
申请号：US13604035
申请日：2012-09-05
申请人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
发明人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L29/82 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F41/307 , H01L21/02104 , H01L43/08 , H01L43/12
摘要： The present disclosure concerns a method of fabricating a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, comprising: forming the first ferromagnetic layer; forming the tunnel barrier layer; and forming the second ferromagnetic layer; wherein said forming the tunnel barrier layer comprises depositing a layer of metallic Mg; and oxidizing the deposited layer of metallic Mg such as to transform the metallic Mg into MgO; the step of forming the tunnel barrier layer being performed at least twice such that the tunnel barrier layer comprises at least two layers of MgO.
摘要翻译：本公开涉及一种制造适用于磁性随机存取存储器（MRAM）单元并且包括第一铁磁层，隧道势垒层和第二铁磁层的磁性隧道结的方法，包括：形成第一铁磁层; 形成隧道势垒层; 并形成所述第二铁磁层; 其中所述形成隧道势垒层包括沉积金属Mg层; 并且将金属Mg的沉积层氧化以将金属Mg转变成MgO; 形成隧道势垒层的步骤至少进行两次，使得隧道势垒层包括至少两层MgO。

9. 发明申请

US20120300539A1 MULTIBIT CELL WITH SYNTHETIC STORAGE LAYER 有权
标题翻译：具有合成存储层的多个单元
公开(公告)号：US20120300539A1
公开(公告)日：2012-11-29
申请号：US13475215
申请日：2012-05-18
申请人： Lucien Lombard , Ioan Lucian Prejbeanu
发明人： Lucien Lombard , Ioan Lucian Prejbeanu
IPC分类号： G11C11/16
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： Method for writing and reading more than two data bits to a MRAM cell comprising a magnetic tunnel junction formed from a read magnetic layer having a read magnetization, and a storage layer comprising a first storage ferromagnetic layer having a first storage magnetization, a second storage ferromagnetic layer having a second storage magnetization; the method comprising: heating the magnetic tunnel junction above a high temperature threshold; and orienting the first storage magnetization at an angle with respect to the second storage magnetization such that the magnetic tunnel junction reaches a resistance state level determined by the orientation of the first storage magnetization relative to that of the read magnetization. The method allows for storing at least four distinct state levels in the MRAM cell using only one current line to generate a writing field.
摘要翻译：一种用于将多于两个数据位写入和读取到MRAM单元的方法，所述MRAM单元包括由具有读磁化的读磁层形成的磁隧道结，以及存储层，包括具有第一存储磁化的第一存储铁磁层，第二存储铁磁层具有第二存储磁化; 所述方法包括：将所述磁性隧道结加热至高于温度阈值以上; 以及使所述第一存储磁化相对于所述第二存储磁化成一定角度，使得所述磁隧道结达到由所述第一存储磁化相对于所述读取磁化的取向所确定的电阻状态水平。该方法允许仅使用一条当前行在MRAM单元中存储至少四个不同的状态级别来生成写入字段。

10. 发明申请

US20120181642A1 MAGNETIC TUNNEL JUNCTION COMPRISING A POLARIZING LAYER 有权
标题翻译：包含极化层的磁性隧道结
公开(公告)号：US20120181642A1
公开(公告)日：2012-07-19
申请号：US13348996
申请日：2012-01-12
申请人： Ioan Lucian Prejbeanu , Ricardo Sousa
发明人： Ioan Lucian Prejbeanu , Ricardo Sousa
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell.
摘要翻译：本公开涉及包括磁隧道结的存储器件，其包括在具有固定取向的第一磁化的第一铁磁层和具有可自由取向的第二磁化的第二铁磁层之间的隧道势垒层，以及具有基本上垂直于第一和第二磁化; 第一和第二铁磁层被退火，使得磁性隧道结的隧道磁阻等于或大于约150％。还公开了形成MRAM单元的方法。

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