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1. 发明申请

US20120181644A1 LOW POWER MAGNETIC RANDOM ACCESS MEMORY CELL 有权
标题翻译：低功率磁力随机存取存储器单元
公开(公告)号：US20120181644A1
公开(公告)日：2012-07-19
申请号：US13352706
申请日：2012-01-18
申请人： Clarisse Ducruet , Céline Portemont , Ioan Lucian Prejbeanu
发明人： Clarisse Ducruet , Céline Portemont , Ioan Lucian Prejbeanu
IPC分类号： H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1675
摘要： The present disclosure concerns a magnetic random access memory (MRAM) cell suitable for performing a thermally assisted write operation or a spin torque transfer (STT) based write operation, comprising a magnetic tunnel junction comprising a top electrode; a tunnel barrier layer comprised between a first ferromagnetic layer having a first magnetization direction, and a second ferromagnetic layer having a second magnetization direction adjustable with respect to the first magnetization direction; a front-end layer; and a magnetic or metallic layer on which the second ferromagnetic layer is deposited; the second ferromagnetic layer being comprised between the front-end layer and the tunnel barrier layer and having a thickness comprised between about 0.5 nm and about 2 nm, such that magnetic tunnel junction has a magnetoresistance larger than about 100%. The MRAM cell disclosed herein has lower power consumption compared to conventional MRAM cells.
摘要翻译：本公开涉及一种适于执行热辅助写入操作或基于自旋转矩传输（STT）的写操作的磁随机存取存储器（MRAM）单元，其包括包括顶电极的磁隧道结; 包括在具有第一磁化方向的第一铁磁层之间的隧道势垒层和具有相对于第一磁化方向可调的第二磁化方向的第二铁磁层; 前端层; 以及沉积有第二铁磁层的磁性或金属层; 第二铁磁层包括在前端层和隧道势垒层之间，并且具有约0.5nm至约2nm之间的厚度，使得磁性隧道结具有大于约100％的磁阻。与常规MRAM单元相比，本文公开的MRAM单元具有较低的功耗。

2. 发明授权

US09886989B2 Low power magnetic random access memory cell 有权
公开(公告)号：US09886989B2
公开(公告)日：2018-02-06
申请号：US13352706
申请日：2012-01-18
申请人： Clarisse Ducruet , Céline Portemont , Ioan Lucian Prejbeanu
发明人： Clarisse Ducruet , Céline Portemont , Ioan Lucian Prejbeanu
IPC分类号： H01L29/82 , G11C11/16
CPC分类号： G11C11/161 , G11C11/1675
摘要： The present disclosure concerns a magnetic random access memory (MRAM) cell suitable for performing a thermally assisted write operation or a spin torque transfer (STT) based write operation, comprising a magnetic tunnel junction comprising a top electrode; a tunnel barrier layer comprised between a first ferromagnetic layer having a first magnetization direction, and a second ferromagnetic layer having a second magnetization direction adjustable with respect to the first magnetization direction; a front-end layer; and a magnetic or metallic layer on which the second ferromagnetic layer is deposited; the second ferromagnetic layer being comprised between the front-end layer and the tunnel barrier layer and having a thickness comprised between about 0.5 nm and about 2 nm, such that magnetic tunnel junction has a magnetoresistance larger than about 100%. The MRAM cell disclosed herein has lower power consumption compared to conventional MRAM cells.

3. 发明申请

US20130234266A1 MAGNETIC TUNNEL JUNCTION WITH AN IMPROVED TUNNEL BARRIER 有权
标题翻译：具有改进的隧道式障碍物的磁性隧道连接
公开(公告)号：US20130234266A1
公开(公告)日：2013-09-12
申请号：US13604035
申请日：2012-09-05
申请人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
发明人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L29/82 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F41/307 , H01L21/02104 , H01L43/08 , H01L43/12
摘要： The present disclosure concerns a method of fabricating a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, comprising: forming the first ferromagnetic layer; forming the tunnel barrier layer; and forming the second ferromagnetic layer; wherein said forming the tunnel barrier layer comprises depositing a layer of metallic Mg; and oxidizing the deposited layer of metallic Mg such as to transform the metallic Mg into MgO; the step of forming the tunnel barrier layer being performed at least twice such that the tunnel barrier layer comprises at least two layers of MgO.
摘要翻译：本公开涉及一种制造适用于磁性随机存取存储器（MRAM）单元并且包括第一铁磁层，隧道势垒层和第二铁磁层的磁性隧道结的方法，包括：形成第一铁磁层; 形成隧道势垒层; 并形成所述第二铁磁层; 其中所述形成隧道势垒层包括沉积金属Mg层; 并且将金属Mg的沉积层氧化以将金属Mg转变成MgO; 形成隧道势垒层的步骤至少进行两次，使得隧道势垒层包括至少两层MgO。

4. 发明申请

US20100284215A1 MAGNETIC MEMORY WITH A THERMALLY ASSISTED WRITING PROCEDURE AND REDUCED WRITING FIELD 有权
标题翻译：具有热辅助写入程序和减少写字段的磁记忆
公开(公告)号：US20100284215A1
公开(公告)日：2010-11-11
申请号：US12773072
申请日：2010-05-04
申请人： Ioan Lucian Prejbeanu , Clarisse Ducruet
发明人： Ioan Lucian Prejbeanu , Clarisse Ducruet
IPC分类号： G11C11/14 , H01L21/02 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization direction, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line electrically connected to said magnetic tunnel junction; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is essentially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The TAS-MRAM cell of the invention can be written with a smaller magnetic field than the one used in conventional TAS-MRAM cells and has low power consumption.
摘要翻译：一种具有热辅助切换（TAS）写入程序的磁性随机存取存储器（MRAM）单元，包括由具有在高温阈值可调节的第一磁化强度的铁磁存储层形成的磁性隧道结，具有固定秒的铁磁参考层磁化方向和绝缘层，所述绝缘层设置在铁磁存储器和参考层之间; 选择晶体管电连接到所述磁性隧道结并经由字线可控; 电连接到所述磁性隧道结的电流线; 其特征在于，铁磁存储层的磁晶各向异性基本上与铁磁参考层的磁晶各向异性正交。本发明的TAS-MRAM单元可以写入比常规TAS-MRAM单元中使用的磁场更小的磁场，并且具有低功耗。

5. 发明授权

US10002973B2 Magnetic tunnel junction with an improved tunnel barrier 有权
公开(公告)号：US10002973B2
公开(公告)日：2018-06-19
申请号：US13604035
申请日：2012-09-05
申请人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
发明人： Ioan Lucian Prejbeanu , Celine Portemont , Clarisse Ducruet
IPC分类号： H01L29/82 , G01R33/09 , G11C11/16 , H01L43/08 , H01L21/02 , B82Y10/00 , H01L43/12 , H01F41/30 , B82Y40/00 , B82Y25/00
CPC分类号： H01L29/82 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F41/307 , H01L21/02104 , H01L43/08 , H01L43/12
摘要： The present disclosure concerns a method of fabricating a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, comprising: forming the first ferromagnetic layer; forming the tunnel barrier layer; and forming the second ferromagnetic layer; wherein said forming the tunnel barrier layer comprises depositing a layer of metallic Mg; and oxidizing the deposited layer of metallic Mg such as to transform the metallic Mg into MgO; the step of forming the tunnel barrier layer being performed at least twice such that the tunnel barrier layer comprises at least two layers of MgO.

6. 发明授权

US08391053B2 Magnetic memory with a thermally assisted writing procedure and reduced writing field 有权
标题翻译：具有热辅助写入程序和减少写字段的磁记忆体
公开(公告)号：US08391053B2
公开(公告)日：2013-03-05
申请号：US12773072
申请日：2010-05-04
申请人： Ioan Lucian Prejbeanu , Clarisse Ducruet
发明人： Ioan Lucian Prejbeanu , Clarisse Ducruet
IPC分类号： G11C11/10 , G11C11/15
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure, comprising a magnetic tunnel junction formed from a ferromagnetic storage layer having a first magnetization adjustable at a high temperature threshold, a ferromagnetic reference layer having a fixed second magnetization direction, and an insulating layer, said insulating layer being disposed between the ferromagnetic storage and reference layers; a select transistor being electrically connected to said magnetic tunnel junction and controllable via a word line; a current line electrically connected to said magnetic tunnel junction; characterized in that the magnetocrystalline anisotropy of the ferromagnetic storage layer is essentially orthogonal with the magnetocrystalline anisotropy of the ferromagnetic reference layer. The TAS-MRAM cell of the invention can be written with a smaller magnetic field than the one used in conventional TAS-MRAM cells and has low power consumption.
摘要翻译：一种具有热辅助切换（TAS）写入程序的磁性随机存取存储器（MRAM）单元，包括由具有在高温阈值可调节的第一磁化强度的铁磁存储层形成的磁性隧道结，具有固定秒的铁磁参考层磁化方向和绝缘层，所述绝缘层设置在铁磁存储器和参考层之间; 选择晶体管电连接到所述磁性隧道结并经由字线可控; 电连接到所述磁性隧道结的电流线; 其特征在于，铁磁存储层的磁晶各向异性基本上与铁磁参考层的磁晶各向异性正交。本发明的TAS-MRAM单元可以写入比常规TAS-MRAM单元中使用的磁场更小的磁场，并且具有低功耗。

7. 发明授权

US07898833B2 Magnetic element with thermally-assisted writing 有权
标题翻译：具有热辅助写入功能的磁性元件
公开(公告)号：US07898833B2
公开(公告)日：2011-03-01
申请号：US12269918
申请日：2008-11-13
申请人： Lucian Prejbeanu , Cécile Maunoury , Bernard Dieny , Clarisse Ducruet , Ricardo Sousa
发明人： Lucian Prejbeanu , Cécile Maunoury , Bernard Dieny , Clarisse Ducruet , Ricardo Sousa
IPC分类号： G11C15/02
CPC分类号： G11C11/16 , G11C11/1675 , H01L27/228 , H01L43/10
摘要： A magnetic element with thermally-assisted writing using a field or spin transfer provided, including a magnetic reference layer referred to as the “trapped layer,” the magnetization of which is in a fixed direction, and a magnetic storage layer called the “free layer” having a variable magnetization direction and consisting of a layer made of a ferromagnetic material with magnetization in the plane of the layer and magnetically coupled to a magnetization-trapping layer made of an antiferromagnetic material. A semiconductor or an insulating layer with confined-current-paths is sandwiched between the reference layer and the storage layer. At least one bilayer, consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer, is provided in the storage layer between ferromagnetic layer, which is in contact with the semiconductor or insulating layer with confined-current-paths, and antiferromagnetic layer.
摘要翻译：一种具有使用场或自旋转移的热辅助写入的磁性元件，包括被称为被捕获层的磁性参考层，其磁化在固定的方向，以及称为“自由层 “具有可变的磁化方向，并由由铁磁材料制成的层组成，在层的平面内具有磁化，并且磁耦合到由反铁磁材料制成的磁化捕获层。具有限制电流路径的半导体或绝缘层被夹在参考层和存储层之间。在与半导体接触的铁磁层之间的存储层中设置至少一个双层，其分别由非晶或准非晶材料构成，以及具有与反铁磁性层相同结构或相同晶格的材料，具有限流路径的绝缘层和反铁磁层。

8. 发明申请

US20090147392A1 MAGNETIC ELEMENT WITH THERMALLY-ASSISTED WRITING 有权
标题翻译：具有热辅助写字的磁性元件
公开(公告)号：US20090147392A1
公开(公告)日：2009-06-11
申请号：US12269918
申请日：2008-11-13
申请人： Lucian Prejbeanu , Cecile Maunoury , Bernard Dieny , Clarisse Ducruet , Ricardo Sousa
发明人： Lucian Prejbeanu , Cecile Maunoury , Bernard Dieny , Clarisse Ducruet , Ricardo Sousa
IPC分类号： G11B5/02
CPC分类号： G11C11/16 , G11C11/1675 , H01L27/228 , H01L43/10
摘要： This magnetic element with thermally-assisted writing using a field or spin transfer comprises a magnetic reference layer referred to as the “trapped layer”, the magnetisation of which is in a fixed direction; a magnetic storage layer called the “free layer” having a variable magnetisation direction and consisting of a layer made of a ferromagnetic material with magnetisation in the plane of the layer and magnetically coupled to a magnetisation-trapping layer made of an antiferromagnetic material; a semiconductor or an insulating layer with confined-current-paths sandwiched between the reference layer and the storage layer. At least one bilayer consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer is placed in the storage layer between ferromagnetic layer which is in contact with the semiconductor or insulating layer with confined-current-paths and antiferromagnetic layer.
摘要翻译：具有使用场或自旋转移的热辅助写入的该磁性元件包括被称为“捕获层”的磁性参考层，其磁化处于固定方向; 称为“自由层”的磁存储层具有可变的磁化方向，并且由一层由铁磁材料制成的层组成，该层由该层的平面磁化并磁耦合到由反铁磁材料制成的磁化捕获层; 半导体或绝缘层，其中限定电流路径夹在参考层和存储层之间。分别由非晶或准非晶体材料构成的至少一个双层和具有与反铁磁层相同结构或相同晶格的材料放置在与半导体或绝缘层接触的铁磁层之间的存储层中，限流路径和反铁磁层。

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