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1. 发明授权

US08199603B2 Nonvolatile memory devices having variable-resistance memory cells and methods of programming the same 有权
标题翻译：具有可变电阻存储单元的非易失性存储器件及其编程方法
公开(公告)号：US08199603B2
公开(公告)日：2012-06-12
申请号：US12498549
申请日：2009-07-07
申请人： Won-Ryul Chung , Byung-Gil Choi , In-Cheol Shin , Ki-Won Lim
发明人： Won-Ryul Chung , Byung-Gil Choi , In-Cheol Shin , Ki-Won Lim
IPC分类号： G11C8/00
CPC分类号： G11C13/0038 , G11C8/10 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C2013/009 , G11C2013/0092 , G11C2213/72 , G11C2213/79
摘要： Nonvolatile memory devices include an array of variable-resistance memory cells and a write driver electrically coupled to the array. The write driver is configured to drive a bit line in the array of variable-resistance memory cells with a stair-step sequence of at least two unequal bit line voltages during an operation to program a variable-resistance memory cell in said array. This stair-step sequence of at least two unequal bit line voltages includes a precharge voltage (e.g., Vcc-Vth) at a first step and a higher boosted voltage (e.g., Vpp-Vth) at a second step that follows the first step.
摘要翻译：非易失性存储器件包括可变电阻存储器单元阵列和电耦合到阵列的写入驱动器。写入驱动器被配置为在用于编程所述阵列中的可变电阻存储器单元的操作期间，在具有至少两个不相等的位线电压的阶梯序列的驱动可变电阻存储器单元阵列中的位线。至少两个不等位线电压的阶梯级序列包括第一步骤的预充电电压（例如Vcc-Vth）和跟随第一步骤的第二步骤的较高升压电压（例如，Vpp-Vth）。

2. 发明授权

US07817479B2 Nonvolatile memory device using a variable resistive element and associated operating method 有权
标题翻译：使用可变电阻元件和相关操作方法的非易失性存储器件
公开(公告)号：US07817479B2
公开(公告)日：2010-10-19
申请号：US12136822
申请日：2008-06-11
申请人： Yu-Hwan Ro , Byung-Gil Choi , In-Cheol Shin
发明人： Yu-Hwan Ro , Byung-Gil Choi , In-Cheol Shin
IPC分类号： G11C16/04
CPC分类号： G11C13/00 , G11C13/0004 , G11C13/0038 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/72
摘要： A nonvolatile memory device that utilizes both a voltage provided outside the memory device and a voltage generated within the device instead of using only a voltage generated within the device as a driving voltage avoids malfunctions of the memory device when instantaneous significant voltage drops occur. The nonvolatile memory device includes a plurality of nonvolatile memory cells, a bit line coupled to at least a portion of the plurality of nonvolatile memory cells, a column-selection transistor coupled to the bit line and a driving circuit. The driving circuit is coupled to a gate of the column-selection transistor and is configured to supply a charge to the gate using a first voltage and a second voltage wherein the second voltage is higher than the first voltage.
摘要翻译：使用提供在存储器件外部的电压和在器件内产生的电压而不是仅使用在器件内产生的电压作为驱动电压的非易失性存储器件避免了当出现瞬时显着电压下降时存储器件的故障。非易失性存储器件包括多个非易失性存储器单元，耦合到多个非易失性存储器单元的至少一部分的位线，耦合到位线的列选择晶体管和驱动电路。驱动电路耦合到列选择晶体管的栅极，并且被配置为使用其中第二电压高于第一电压的第一电压和第二电压向栅极提供电荷。

3. 发明申请

US20090003048A1 NONVOLATILE MEMORY DEVICE USING A VARIABLE RESISTIVE ELEMENT AND ASSOCIATED OPERATING METHOD 有权
标题翻译：使用可变电阻元件和相关操作方法的非易失性存储器件
公开(公告)号：US20090003048A1
公开(公告)日：2009-01-01
申请号：US12136822
申请日：2008-06-11
申请人： Yu-Hwan RO , Byung-Gil CHOI , In-Cheol SHIN
发明人： Yu-Hwan RO , Byung-Gil CHOI , In-Cheol SHIN
IPC分类号： G11C11/00 , G11C7/00 , G11C8/00
CPC分类号： G11C13/00 , G11C13/0004 , G11C13/0038 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/72
摘要： A nonvolatile memory device that utilizes both a voltage provided outside the memory device and a voltage generated within the device instead of using only a voltage generated within the device as a driving voltage avoids malfunctions of the memory device when instantaneous significant voltage drops occur. The nonvolatile memory device includes a plurality of nonvolatile memory cells, a bit line coupled to at least a portion of the plurality of nonvolatile memory cells, a column-selection transistor coupled to the bit line and a driving circuit. The driving circuit is coupled to a gate of the column-selection transistor and is configured to supply a charge to the gate using a first voltage and a second voltage wherein the second voltage is higher than the first voltage.
摘要翻译：使用提供在存储器件外部的电压和在器件内产生的电压而不是仅使用在器件内产生的电压作为驱动电压的非易失性存储器件避免了当出现瞬时显着电压下降时存储器件的故障。非易失性存储器件包括多个非易失性存储器单元，耦合到多个非易失性存储器单元的至少一部分的位线，耦合到位线的列选择晶体管和驱动电路。驱动电路耦合到列选择晶体管的栅极，并且被配置为使用其中第二电压高于第一电压的第一电压和第二电压向栅极提供电荷。

4. 发明授权

US09341064B2 Vane rotary compressor having a hinge-coupled vane 有权
标题翻译：叶片式旋转式压缩机具有铰链式叶片
公开(公告)号：US09341064B2
公开(公告)日：2016-05-17
申请号：US14233846
申请日：2012-07-20
申请人： Jung Myung Kwak , Seon Joo Hong , Kweon Soo Lim , In Cheol Shin
发明人： Jung Myung Kwak , Seon Joo Hong , Kweon Soo Lim , In Cheol Shin
IPC分类号： F03C4/00 , F04C2/00 , F04C18/00 , F01C21/10 , F01C1/44 , F04C2/44 , F04C29/06 , F04C18/344
CPC分类号： F01C21/10 , F01C1/44 , F01C21/106 , F04C2/44 , F04C18/344 , F04C29/065 , F04C29/066
摘要： The present invention relates to a vane rotary compressor in which, while a rotor is rotating, the volume of a compressing chamber is reduced and a fluid such as a refrigerant is compressed. The vane rotary compressor according to one embodiment of the present invention is provided with the compressing chamber, the inner circumferential surface of which is formed in the shape of an involute curve, wherein the rotor is hinge-coupled with a plurality of cantilever vanes such that compression efficiency is high and noise is prevented from occurring during the operation of the compressor.
摘要翻译：叶片旋转压缩机技术领域本发明涉及一种叶片式旋转式压缩机，其中，当转子旋转时，压缩室的容积减小，并且诸如制冷剂的流体被压缩。根据本发明的一个实施例的叶片式旋转式压缩机设置有压缩室，其内周面形成为渐开线曲线的形状，其中转子与多个悬臂叶片铰链联接，使得压缩效率高，并且防止在压缩机的操作期间发生噪声。

5. 发明申请

US20140170010A1 VANE ROTARY COMPRESSOR 有权
标题翻译： VANE旋转压缩机
公开(公告)号：US20140170010A1
公开(公告)日：2014-06-19
申请号：US14233846
申请日：2012-07-20
申请人： Jung Myung Kwak , Seon Joo Hong , Kweon Soo Lim , In Cheol Shin
发明人： Jung Myung Kwak , Seon Joo Hong , Kweon Soo Lim , In Cheol Shin
IPC分类号： F04C15/00 , F04C2/44
CPC分类号： F01C21/10 , F01C1/44 , F01C21/106 , F04C2/44 , F04C18/344 , F04C29/065 , F04C29/066
摘要： The present invention relates to a vane rotary compressor in which, while a rotor is rotating, the volume of a compressing chamber is reduced and a fluid such as a refrigerant is compressed. The vane rotary compressor according to one embodiment of the present invention is provided with the compressing chamber, the inner circumferential surface of which is formed in the shape of an involute curve, wherein the rotor is hinge-coupled with a plurality of cantilever vanes such that compression efficiency is high and noise is prevented from occurring during the operation of the compressor.
摘要翻译：叶片旋转压缩机技术领域本发明涉及一种叶片式旋转式压缩机，其中，当转子旋转时，压缩室的容积减小，并且诸如制冷剂的流体被压缩。根据本发明的一个实施例的叶片式旋转式压缩机设置有压缩室，其内周面形成为渐开线曲线的形状，其中转子与多个悬臂叶片铰链联接，使得压缩效率高，并且防止在压缩机的操作期间发生噪声。

6. 发明授权

US09799859B2 Secondary battery having improved safety 有权
公开(公告)号：US09799859B2
公开(公告)日：2017-10-24
申请号：US13343018
申请日：2012-01-04
申请人： Chang Moon Jeong , Chang Ho Kim , Seung Don Choi , Min Chul Jang , Seung Taek Hong , In Cheol Shin , Nan Ji Yun , Dal Mo Kang , Yo Jin Kim , Yong Kyu Ju , You Rim Yoon , Sang Yoon Jeong , Seung Su Cho , Soul Gie Hong , Jun Seok Choi
发明人： Chang Moon Jeong , Chang Ho Kim , Seung Don Choi , Min Chul Jang , Seung Taek Hong , In Cheol Shin , Nan Ji Yun , Dal Mo Kang , Yo Jin Kim , Yong Kyu Ju , You Rim Yoon , Sang Yoon Jeong , Seung Su Cho , Soul Gie Hong , Jun Seok Choi
IPC分类号： H01M2/10 , H01M2/32 , H01M2/02 , H01M2/34 , C08G73/22 , C08L77/10 , C08L79/04
CPC分类号： H01M2/0257 , C08G73/22 , C08L77/10 , C08L79/04 , H01M2/0262 , H01M2/028 , H01M2/1077 , H01M2/1094 , H01M2/32 , H01M2/345 , H01M2/347 , H01M2/348 , H01M2220/20
摘要： Provided are a secondary battery, a battery module, and a battery pack, which have improved safety. Particularly, since a bulletproof material is disposed on the inside and/or the outside of an exterior part, even when a conductive needle-shaped member penetrates a secondary battery, heating, burning, discharge of evaporated electrolyte, and electrical contact between the needle-shaped member and an electrode can be prevented, thereby improving safety of the secondary battery, the battery module, and the battery pack.

7. 发明申请

US20100027327A1 Nonvolatile Memory Devices Having Variable-Resistance Memory Cells and Methods of Programming the Same 有权
标题翻译：具有可变电阻存储单元的非易失性存储器件及其编程方法
公开(公告)号：US20100027327A1
公开(公告)日：2010-02-04
申请号：US12498549
申请日：2009-07-07
申请人： Won-Ryul Chung , Byung-Gil Choi , In-Cheol Shin , Ki-Won Lim
发明人： Won-Ryul Chung , Byung-Gil Choi , In-Cheol Shin , Ki-Won Lim
IPC分类号： G11C11/00 , G11C8/08 , G11C7/00
CPC分类号： G11C13/0038 , G11C8/10 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C2013/009 , G11C2013/0092 , G11C2213/72 , G11C2213/79
摘要： Nonvolatile memory devices include an array of variable-resistance memory cells and a write driver electrically coupled to the array. The write driver is configured to drive a bit line in the array of variable-resistance memory cells with a stair-step sequence of at least two unequal bit line voltages during an operation to program a variable-resistance memory cell in said array. This stair-step sequence of at least two unequal bit line voltages includes a precharge voltage (e.g., Vcc-Vth) at a first step and a higher boosted voltage (e.g., Vpp-Vth) at a second step that follows the first step.
摘要翻译：非易失性存储器件包括可变电阻存储器单元阵列和电耦合到阵列的写入驱动器。写入驱动器被配置为在用于编程所述阵列中的可变电阻存储器单元的操作期间，在具有至少两个不相等的位线电压的阶梯序列的驱动可变电阻存储器单元阵列中的位线。至少两个不等位线电压的阶梯级序列包括第一步骤的预充电电压（例如Vcc-Vth）和跟随第一步骤的第二步骤的较高升压电压（例如，Vpp-Vth）。

8. 发明授权

US6067269A Semiconductor memory device capable of operating at a low power supply voltage 有权
标题翻译：能够以低电源电压工作的半导体存储器件
公开(公告)号：US6067269A
公开(公告)日：2000-05-23
申请号：US213615
申请日：1998-12-17
申请人： Gong-Heum Han , Cheol-Sung Park , In-Cheol Shin
发明人： Gong-Heum Han , Cheol-Sung Park , In-Cheol Shin
IPC分类号： G11C11/413 , G11C5/14 , G11C8/08 , G11C11/401 , G11C11/407 , G11C29/06 , G11C7/00
CPC分类号： G11C8/08
摘要： A semiconductor memory device is provided which uses an externally applied power supply voltage as its operating voltage. The device comprises plural memory cells each arranged in intersections of word lines and bit lines. The device further comprises an internal power supply voltage generating circuit for receiving the externally applied power supply voltage to generate an internal power supply voltage of a first level. Furthermore, the device has a plurality of word line drivers each connected to the word lines and to a power node for receiving the internal power supply voltage. The each of the word line drivers drives a corresponding word line with the internal power supply voltage in response to a word line selection signal. According to the semiconductor memory device of the present invention, a potential on the word line becomes maintained constantly at the operating voltage even though the external power supply voltage is increased. This prevents bit lines from becoming charged more than a required level owing to an external power supply voltage variation, so that signal swing width on each bit line and a write recovery time becomes maintained constantly. As a result, there is few or no power consumption in association with an external power supply voltage variation.
摘要翻译：提供了使用外部施加的电源电压作为其工作电压的半导体存储器件。该装置包括多个存储单元，每个存储单元分别布置在字线和位线的交点中。该装置还包括用于接收外部施加的电源电压以产生第一电平的内部电源电压的内部电源电压产生电路。此外，该装置具有多个字线驱动器，每个字线驱动器都连接到字线和用于接收内部电源电压的功率节点。每个字线驱动器响应于字线选择信号而驱动具有内部电源电压的对应字线。根据本发明的半导体存储器件，即使外部电源电压增加，字线上的电位也始终保持在工作电压。这样可以防止由于外部电源电压变化而使位线充电到需要的电平以上，从而使每个位线上的信号摆幅宽度和写入恢复时间保持不变。结果，与外部电源电压变化相关联的功率消耗很少或没有。

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