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1. 发明授权

US6067269A Semiconductor memory device capable of operating at a low power supply voltage 有权
标题翻译：能够以低电源电压工作的半导体存储器件
公开(公告)号：US6067269A
公开(公告)日：2000-05-23
申请号：US213615
申请日：1998-12-17
申请人： Gong-Heum Han , Cheol-Sung Park , In-Cheol Shin
发明人： Gong-Heum Han , Cheol-Sung Park , In-Cheol Shin
IPC分类号： G11C11/413 , G11C5/14 , G11C8/08 , G11C11/401 , G11C11/407 , G11C29/06 , G11C7/00
CPC分类号： G11C8/08
摘要： A semiconductor memory device is provided which uses an externally applied power supply voltage as its operating voltage. The device comprises plural memory cells each arranged in intersections of word lines and bit lines. The device further comprises an internal power supply voltage generating circuit for receiving the externally applied power supply voltage to generate an internal power supply voltage of a first level. Furthermore, the device has a plurality of word line drivers each connected to the word lines and to a power node for receiving the internal power supply voltage. The each of the word line drivers drives a corresponding word line with the internal power supply voltage in response to a word line selection signal. According to the semiconductor memory device of the present invention, a potential on the word line becomes maintained constantly at the operating voltage even though the external power supply voltage is increased. This prevents bit lines from becoming charged more than a required level owing to an external power supply voltage variation, so that signal swing width on each bit line and a write recovery time becomes maintained constantly. As a result, there is few or no power consumption in association with an external power supply voltage variation.
摘要翻译：提供了使用外部施加的电源电压作为其工作电压的半导体存储器件。该装置包括多个存储单元，每个存储单元分别布置在字线和位线的交点中。该装置还包括用于接收外部施加的电源电压以产生第一电平的内部电源电压的内部电源电压产生电路。此外，该装置具有多个字线驱动器，每个字线驱动器都连接到字线和用于接收内部电源电压的功率节点。每个字线驱动器响应于字线选择信号而驱动具有内部电源电压的对应字线。根据本发明的半导体存储器件，即使外部电源电压增加，字线上的电位也始终保持在工作电压。这样可以防止由于外部电源电压变化而使位线充电到需要的电平以上，从而使每个位线上的信号摆幅宽度和写入恢复时间保持不变。结果，与外部电源电压变化相关联的功率消耗很少或没有。

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