专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07556994B2 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making 有权
标题翻译：宽带隙半导体中的常规集成JFET电源开关及其制造方法
公开(公告)号：US07556994B2
公开(公告)日：2009-07-07
申请号：US11783224
申请日：2007-04-06
申请人： Igor Sankin , Joseph N. Merrett
发明人： Igor Sankin , Joseph N. Merrett
IPC分类号： H01L29/72
CPC分类号： H03K17/567 , H01L27/098 , H01L29/1608 , H01L29/2003 , H01L29/808 , H01L29/8083 , H01L29/8086 , H01L29/861 , H01L29/868 , H01L29/872
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
摘要翻译：描述了包括常闭VJFET集成功率开关的宽带隙半导体器件。功率开关可以单片或混合地实现，并且可以与内置在单芯片或多芯片宽带隙功率半导体模块中的控制电路集成。该器件可用于高功率，耐温和耐辐射电子元件。还描述了制造装置的方法。

2. 发明申请

US20070275527A1 SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING 有权
标题翻译：具有复位栅的自对准TRENCH场效应晶体管和带有基极接触区的双极晶体管晶体管和制造方法
公开(公告)号：US20070275527A1
公开(公告)日：2007-11-29
申请号：US11293261
申请日：2005-12-05
申请人： Joseph Merrett , Igor Sankin
发明人： Joseph Merrett , Igor Sankin
IPC分类号： H01L21/336
CPC分类号： H01L29/66068 , H01L29/732 , H01L29/808
摘要： Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.
摘要翻译：描述了具有垂直沟道和自对准再生栅的结型场效应晶体管和制造这些器件的方法。所述方法使用技术来选择性地生长和/或选择性地去除半导体材料，以沿着沟道的侧面和分离源极指的沟槽的底部形成p-n结栅极。还描述了制造具有自对准重新生长的基极接触区域的双极结型晶体管的方法以及制造这些器件的方法。半导体器件可以制成碳化硅。

3. 发明申请

US20060113561A1 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors 有权
公开(公告)号：US20060113561A1
公开(公告)日：2006-06-01
申请号：US10999954
申请日：2004-12-01
申请人： Igor Sankin , Jeffrey Casady , Joseph Merrett
发明人： Igor Sankin , Jeffrey Casady , Joseph Merrett
IPC分类号： H01L31/111 , H01L21/332
CPC分类号： H01L29/2003 , H01L27/098 , H01L29/1608 , H01L29/47 , H01L29/808 , H01L29/8122
摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.

4. 发明授权

US08502282B2 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making 有权
标题翻译：宽带隙半导体中的常规集成JFET电源开关及其制造方法
公开(公告)号：US08502282B2
公开(公告)日：2013-08-06
申请号：US13207623
申请日：2011-08-11
申请人： Igor Sankin , Joseph Neil Merrett
发明人： Igor Sankin , Joseph Neil Merrett
IPC分类号： H01L21/337
CPC分类号： H01L29/808 , H01L27/098 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/8083 , H01L29/8122 , H01L29/8124 , H01L29/861 , H01L29/868 , H01L29/872 , H03K17/08142 , H03K17/08148 , H03K17/567 , H03K17/6871 , H03K2017/6875
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
摘要翻译：描述了包括常闭VJFET集成功率开关的宽带隙半导体器件。功率开关可以单片或混合地实现，并且可以与内置在单芯片或多芯片宽带隙功率半导体模块中的控制电路集成。该器件可用于高功率，耐温和耐辐射电子元件。还描述了制造装置的方法。

5. 发明申请

US20120309154A1 VERTICAL JUNCTION FIELD EFFECT TRANSISTOR WITH MESA TERMINATION AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：具有MESA终止的垂直连接场效应晶体管及其制造方法
公开(公告)号：US20120309154A1
公开(公告)日：2012-12-06
申请号：US13587151
申请日：2012-08-16
申请人： Igor SANKIN , Joseph Neil MERRETT
发明人： Igor SANKIN , Joseph Neil MERRETT
IPC分类号： H01L21/336
CPC分类号： H01L29/868 , H01L29/1608 , H01L29/872
摘要： A vertical junction field effect transistor (VJFET) having a mesa termination and a method of making the device are described. The device includes: an n-type mesa on an n-type substrate; a plurality of raised n-type regions on the mesa comprising an upper n-type layer on a lower n-type layer; p-type regions between and adjacent the raised n-type regions and along a lower sidewall portion of the raised regions; dielectric material on the sidewalls of the raised regions, on the p-type regions and on the sidewalls of the mesa; and electrical contacts to the substrate (drain), p-type regions (gate) and the upper n-type layer (source). The device can be made in a wide-bandgap semiconductor material such as SiC. The method includes selectively etching through an n-type layer using a mask to form the raised regions and implanting p-type dopants into exposed surfaces of an underlying n-type layer using the mask.
摘要翻译：描述具有台面终止的垂直结型场效应晶体管（VJFET）和制造该器件的方法。该装置包括：n型衬底上的n型台面; 在台面上的多个凸起的n型区域，包括在下n型层上的上n型层; 在凸起的n型区域之间和相邻的凸起区域的下侧壁部分之间的p型区域; 介电材料在凸起区域的侧壁上，在p型区域和台面的侧壁上; 和与基板（漏极），p型区域（gate）和上部n型层（源极）的电接触。该器件可以制成诸如SiC的宽带隙半导体材料。该方法包括使用掩模选择性地蚀刻n型层以形成凸起区域，并使用掩模将p型掺杂剂注入到下面的n型层的暴露表面中。

6. 发明申请

US20120305994A1 SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING 有权
标题翻译：具有复位栅的自对准TRENCH场效应晶体管和带有基极接触区的双极晶体管晶体管和制造方法
公开(公告)号：US20120305994A1
公开(公告)日：2012-12-06
申请号：US13585183
申请日：2012-08-14
申请人： Joseph Neil MERRETT , Igor SANKIN
发明人： Joseph Neil MERRETT , Igor SANKIN
IPC分类号： H01L29/808 , H01L29/732
CPC分类号： H01L29/66068 , H01L29/732 , H01L29/808
摘要： Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.
摘要翻译：描述了具有垂直沟道和自对准再生栅的结型场效应晶体管和制造这些器件的方法。所述方法使用技术来选择性地生长和/或选择性地去除半导体材料，以沿着沟道的侧面和分离源极指的沟槽的底部形成p-n结栅极。还描述了制造具有自对准重新生长的基极接触区域的双极结型晶体管的方法以及制造这些器件的方法。半导体器件可以制成碳化硅。

7. 发明授权

US08269262B2 Vertical junction field effect transistor with mesa termination and method of making the same 有权
标题翻译：垂直结场效应晶体管与台面端接及制作方法相同
公开(公告)号：US08269262B2
公开(公告)日：2012-09-18
申请号：US11836994
申请日：2007-08-10
申请人： Igor Sankin , Joseph Neil Merrett
发明人： Igor Sankin , Joseph Neil Merrett
IPC分类号： H01L29/66
CPC分类号： H01L29/868 , H01L29/1608 , H01L29/872
摘要： A vertical junction field effect transistor (VJFET) having a mesa termination and a method of making the device are described. The device includes: an n-type mesa on an n-type substrate; a plurality of raised n-type regions on the mesa comprising an upper n-type layer on a lower n-type layer; p-type regions between and adjacent the raised n-type regions and along a lower sidewall portion of the raised regions; dielectric material on the sidewalls of the raised regions, on the p-type regions and on the sidewalls of the mesa; and electrical contacts to the substrate (drain), p-type regions (gate) and the upper n-type layer (source). The device can be made in a wide-bandgap semiconductor material such as SiC. The method includes selectively etching through an n-type layer using a mask to form the raised regions and implanting p-type dopants into exposed surfaces of an underlying n-type layer using the mask.
摘要翻译：描述具有台面终止的垂直结型场效应晶体管（VJFET）和制造该器件的方法。该装置包括：n型衬底上的n型台面; 在台面上的多个凸起的n型区域，包括在下n型层上的上n型层; 在凸起的n型区域之间和相邻的凸起区域的下侧壁部分之间的p型区域; 介电材料在凸起区域的侧壁上，在p型区域和台面的侧壁上; 和与基板（漏极），p型区域（gate）和上部n型层（源极）的电接触。该器件可以制成诸如SiC的宽带隙半导体材料。该方法包括使用掩模选择性地蚀刻n型层以形成凸起区域，并使用掩模将p型掺杂剂注入到下面的n型层的暴露表面中。

8. 发明申请

US20120025100A1 PHOTOLUMINESCENCE MEASUREMENT 有权
标题翻译：光致发光测量
公开(公告)号：US20120025100A1
公开(公告)日：2012-02-02
申请号：US13195163
申请日：2011-08-01
申请人： Arnold Allenic , Douglas Bacon , Benyamin Buller , John Christiansen , Erel Milshtein , Avner Regev , Igor Sankin
发明人： Arnold Allenic , Douglas Bacon , Benyamin Buller , John Christiansen , Erel Milshtein , Avner Regev , Igor Sankin
IPC分类号： G01J1/58
CPC分类号： H01L22/12 , G01N21/6489 , G01N21/9501 , G01N2021/6419 , G01N2021/6421 , G01N2021/646 , G01N2021/8411 , G01N2021/845
摘要： A photoluminescence measurement system can include an optical source.
摘要翻译：光致发光测量系统可以包括光源。

9. 发明授权

US07242040B2 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors 有权
标题翻译：宽带隙半导体材料中的横向沟槽场效应晶体管，制造方法和结合晶体管的集成电路
公开(公告)号：US07242040B2
公开(公告)日：2007-07-10
申请号：US11505813
申请日：2006-08-18
申请人： Igor Sankin , Jeffrey B. Casady , Joseph N. Merrett
发明人： Igor Sankin , Jeffrey B. Casady , Joseph N. Merrett
IPC分类号： H01L21/8234 , H01L21/336 , H01L29/78
CPC分类号： H01L29/2003 , H01L27/098 , H01L29/1608 , H01L29/47 , H01L29/808 , H01L29/8122
摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.
摘要翻译：描述了结型场效应晶体管。晶体管由宽带隙半导体材料制成。该器件包括源极，沟道，漂移和漏极半导体层以及p型注入或肖特基栅极区。源极，沟道，漂移和漏极层可以外延生长。到源极，栅极和漏极区域的欧姆接触可以形成在晶片的同一侧上。器件可以具有取决于垂直沟道宽度的不同阈值电压，并且可以针对相同沟道掺杂的耗尽和增强的工作模式实现。该器件可用于数字，模拟和单片微波集成电路。还描述了制造包括这些器件的晶体管和集成电路的方法。

10. 发明授权

US07119380B2 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors 有权
标题翻译：宽带隙半导体材料中的横向沟槽场效应晶体管，制造方法和结合晶体管的集成电路
公开(公告)号：US07119380B2
公开(公告)日：2006-10-10
申请号：US10999954
申请日：2004-12-01
申请人： Igor Sankin , Jeffrey B. Casady , Joseph N. Merrett
发明人： Igor Sankin , Jeffrey B. Casady , Joseph N. Merrett
IPC分类号： H01L29/74 , H01L29/423 , H01L31/111
CPC分类号： H01L29/2003 , H01L27/098 , H01L29/1608 , H01L29/47 , H01L29/808 , H01L29/8122
摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.
摘要翻译：描述了结型场效应晶体管。晶体管由宽带隙半导体材料制成。该器件包括源极，沟道，漂移和漏极半导体层以及p型注入或肖特基栅极区。源极，沟道，漂移和漏极层可以外延生长。到源极，栅极和漏极区域的欧姆接触可以形成在晶片的同一侧上。器件可以具有取决于垂直沟道宽度的不同阈值电压，并且可以针对相同沟道掺杂的耗尽和增强的工作模式实现。该器件可用于数字，模拟和单片微波集成电路。还描述了制造包括这些器件的晶体管和集成电路的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式