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1. 发明申请

US20060113561A1 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors 有权
公开(公告)号：US20060113561A1
公开(公告)日：2006-06-01
申请号：US10999954
申请日：2004-12-01
申请人： Igor Sankin , Jeffrey Casady , Joseph Merrett
发明人： Igor Sankin , Jeffrey Casady , Joseph Merrett
IPC分类号： H01L31/111 , H01L21/332
CPC分类号： H01L29/2003 , H01L27/098 , H01L29/1608 , H01L29/47 , H01L29/808 , H01L29/8122
摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.

2. 发明申请

US20070012946A1 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors 有权
公开(公告)号：US20070012946A1
公开(公告)日：2007-01-18
申请号：US11505813
申请日：2006-08-18
申请人： Igor Sankin , Jeffrey Casady , Joseph Merrett
发明人： Igor Sankin , Jeffrey Casady , Joseph Merrett
IPC分类号： H01L31/111
CPC分类号： H01L29/2003 , H01L27/098 , H01L29/1608 , H01L29/47 , H01L29/808 , H01L29/8122
摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.

3. 发明申请

US20070275527A1 SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING 有权
标题翻译：具有复位栅的自对准TRENCH场效应晶体管和带有基极接触区的双极晶体管晶体管和制造方法
公开(公告)号：US20070275527A1
公开(公告)日：2007-11-29
申请号：US11293261
申请日：2005-12-05
申请人： Joseph Merrett , Igor Sankin
发明人： Joseph Merrett , Igor Sankin
IPC分类号： H01L21/336
CPC分类号： H01L29/66068 , H01L29/732 , H01L29/808
摘要： Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.
摘要翻译：描述了具有垂直沟道和自对准再生栅的结型场效应晶体管和制造这些器件的方法。所述方法使用技术来选择性地生长和/或选择性地去除半导体材料，以沿着沟道的侧面和分离源极指的沟槽的底部形成p-n结栅极。还描述了制造具有自对准重新生长的基极接触区域的双极结型晶体管的方法以及制造这些器件的方法。半导体器件可以制成碳化硅。

4. 发明申请

US20050199882A1 Self-aligned silicon carbide semiconductor devices and methods of making the same 有权
标题翻译：自对准碳化硅半导体器件及其制造方法
公开(公告)号：US20050199882A1
公开(公告)日：2005-09-15
申请号：US11076857
申请日：2005-03-11
申请人： Igor Sankin , Janna Casady , Joseph Merrett
发明人： Igor Sankin , Janna Casady , Joseph Merrett
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/2003 , H01L29/42316 , H01L29/45 , H01L29/66863 , H01L29/8128
摘要： A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stability as a result of reduced surface trapping effects even at low gate biases. The device can be made using a self-aligned process in which a substrate comprising an n+-doped SiC layer on an n-doped SiC channel layer is etched to define raised source and drain regions (e.g., raised fingers) using a metal etch mask. The metal etch mask is then annealed to form source and drain ohmic contacts. A single- or multilayer dielectric film is then grown or deposited and anisotropically etched. A Schottky contact layer and a final metal layer are subsequently deposited using evaporation or another anisotropic deposition technique followed by an optional isotropic etch of dielectric layer or layers.
摘要翻译：描述了具有改善的电流稳定性的自对准碳化硅功率MESFET和制造该器件的方法。包括由栅极凹槽分开的升高的源极和漏极区域的器件由于即使在低栅极偏置处减小的表面俘获效应也具有改善的电流稳定性。可以使用自对准工艺来制造器件，其中蚀刻在n掺杂的SiC沟道层上包括n + +掺杂的SiC层的衬底以限定凸起的源极和漏极区域（例如，使用金属蚀刻掩模。然后将金属蚀刻掩模退火以形成源极和漏极欧姆接触。然后生长或沉积单层或多层介电膜并进行各向异性蚀刻。随后使用蒸发或其他各向异性沉积技术沉积肖特基接触层和最后的金属层，然后对电介质层或层进行任意的各向同性蚀刻。

5. 发明申请

US20080061362A1 SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING 审中-公开
标题翻译：具有复位栅的自对准TRENCH场效应晶体管和带有基极接触区的双极晶体管晶体管和制造方法
公开(公告)号：US20080061362A1
公开(公告)日：2008-03-13
申请号：US11934805
申请日：2007-11-05
申请人： Joseph Merrett , Igor Sankin
发明人： Joseph Merrett , Igor Sankin
IPC分类号： H01L29/78 , H01L29/732
CPC分类号： H01L29/66068 , H01L29/732 , H01L29/808
摘要： Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.
摘要翻译：描述了具有垂直沟道和自对准再生栅的结型场效应晶体管和制造这些器件的方法。所述方法使用技术来选择性地生长和/或选择性地去除半导体材料，以沿着沟道的侧面和分离源极指的沟槽的底部形成p-n结栅极。还描述了制造具有自对准重新生长的基极接触区域的双极结型晶体管的方法以及制造这些器件的方法。半导体器件可以制成碳化硅。

6. 发明申请

US20070243668A1 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making 有权
标题翻译：宽带隙半导体中的常规集成JFET电源开关及其制造方法
公开(公告)号：US20070243668A1
公开(公告)日：2007-10-18
申请号：US11783224
申请日：2007-04-06
申请人： Igor Sankin , Joseph Merrett
发明人： Igor Sankin , Joseph Merrett
IPC分类号： H01L21/332
CPC分类号： H03K17/567 , H01L27/098 , H01L29/1608 , H01L29/2003 , H01L29/808 , H01L29/8083 , H01L29/8086 , H01L29/861 , H01L29/868 , H01L29/872
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
摘要翻译：描述了包括常闭VJFET集成功率开关的宽带隙半导体器件。功率开关可以单片或混合地实现，并且可以与内置在单芯片或多芯片宽带隙功率半导体模块中的控制电路集成。该器件可用于高功率，耐温和耐辐射电子元件。还描述了制造装置的方法。

7. 发明申请

US20070122951A1 Self-aligned silicon carbide semiconductor devices and methods of making the same 有权
标题翻译：自对准碳化硅半导体器件及其制造方法
公开(公告)号：US20070122951A1
公开(公告)日：2007-05-31
申请号：US11699509
申请日：2007-01-30
申请人： Igor Sankin , Janna Casady , Joseph Merrett
发明人： Igor Sankin , Janna Casady , Joseph Merrett
IPC分类号： H01L21/338
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/2003 , H01L29/42316 , H01L29/45 , H01L29/66863 , H01L29/8128
摘要： A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stability as a result of reduced surface trapping effects even at low gate biases. The device can be made using a self-aligned process in which a substrate comprising an n+-doped SiC layer on an n-doped SiC channel layer is etched to define raised source and drain regions (e.g., raised fingers) using a metal etch mask. The metal etch mask is then annealed to form source and drain ohmic contacts. A single- or multilayer dielectric film is then grown or deposited and anisotropically etched. A Schottky contact layer and a final metal layer are subsequently deposited using evaporation or another anisotropic deposition technique followed by an optional isotropic etch of dielectric layer or layers.
摘要翻译：描述了具有改善的电流稳定性的自对准碳化硅功率MESFET和制造该器件的方法。包括由栅极凹槽分开的升高的源极和漏极区域的器件由于即使在低栅极偏置处减小的表面俘获效应也具有改善的电流稳定性。可以使用自对准工艺来制造器件，其中蚀刻在n掺杂的SiC沟道层上包括n + +掺杂的SiC层的衬底以限定凸起的源极和漏极区域（例如，使用金属蚀刻掩模。然后将金属蚀刻掩模退火以形成源极和漏极欧姆接触。然后生长或沉积单层或多层介电膜并进行各向异性蚀刻。随后使用蒸发或其他各向异性沉积技术沉积肖特基接触层和最后的金属层，然后对电介质层或层进行任意的各向同性蚀刻。

8. 发明申请

US20060113593A1 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making 有权
公开(公告)号：US20060113593A1
公开(公告)日：2006-06-01
申请号：US11000222
申请日：2004-12-01
申请人： Igor Sankin , Joseph Merrett
发明人： Igor Sankin , Joseph Merrett
IPC分类号： H01L29/76
CPC分类号： H03K17/567 , H01L27/098 , H01L29/1608 , H01L29/2003 , H01L29/808 , H01L29/8083 , H01L29/8086 , H01L29/861 , H01L29/868 , H01L29/872
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.

9. 发明授权

US07556994B2 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making 有权
标题翻译：宽带隙半导体中的常规集成JFET电源开关及其制造方法
公开(公告)号：US07556994B2
公开(公告)日：2009-07-07
申请号：US11783224
申请日：2007-04-06
申请人： Igor Sankin , Joseph N. Merrett
发明人： Igor Sankin , Joseph N. Merrett
IPC分类号： H01L29/72
CPC分类号： H03K17/567 , H01L27/098 , H01L29/1608 , H01L29/2003 , H01L29/808 , H01L29/8083 , H01L29/8086 , H01L29/861 , H01L29/868 , H01L29/872
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
摘要翻译：描述了包括常闭VJFET集成功率开关的宽带隙半导体器件。功率开关可以单片或混合地实现，并且可以与内置在单芯片或多芯片宽带隙功率半导体模块中的控制电路集成。该器件可用于高功率，耐温和耐辐射电子元件。还描述了制造装置的方法。

10. 发明授权

US08502282B2 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making 有权
标题翻译：宽带隙半导体中的常规集成JFET电源开关及其制造方法
公开(公告)号：US08502282B2
公开(公告)日：2013-08-06
申请号：US13207623
申请日：2011-08-11
申请人： Igor Sankin , Joseph Neil Merrett
发明人： Igor Sankin , Joseph Neil Merrett
IPC分类号： H01L21/337
CPC分类号： H01L29/808 , H01L27/098 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/8083 , H01L29/8122 , H01L29/8124 , H01L29/861 , H01L29/868 , H01L29/872 , H03K17/08142 , H03K17/08148 , H03K17/567 , H03K17/6871 , H03K2017/6875
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
摘要翻译：描述了包括常闭VJFET集成功率开关的宽带隙半导体器件。功率开关可以单片或混合地实现，并且可以与内置在单芯片或多芯片宽带隙功率半导体模块中的控制电路集成。该器件可用于高功率，耐温和耐辐射电子元件。还描述了制造装置的方法。

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