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1. 发明申请

US20130233343A1 SEQUENTIAL STAGE MIXING FOR SINGLE SUBSTRATE STRIP PROCESSING 有权
标题翻译：用于单基板条纹处理的顺序阶段混合
公开(公告)号：US20130233343A1
公开(公告)日：2013-09-12
申请号：US13413620
申请日：2012-03-06
申请人： IAN J. BROWN
发明人： IAN J. BROWN
IPC分类号： C23G1/02 , B08B3/04 , B08B3/08
CPC分类号： H01L21/6715 , G03F7/423 , H01L21/67253
摘要： Provided is a method for a resist removal system comprising a processing chamber and treatment liquid delivery system for single substrate processing. A primary stripping chemical is flowed in the treatment liquid delivery system at a primary temperature and flow rate; a secondary stripping chemical is injected at a first mixing point at a secondary temperature and flow rate. A tertiary stripping chemical is injected at a second mixing point at a tertiary temperature and a tertiary flow rate. The treatment liquid is dispensed onto a portion of the surface of the substrate wherein one or more of the primary temperature, secondary temperature, tertiary temperature, the primary flow rate, the secondary flow rate, and the tertiary flow rate are adjusted to meet a target strip rate and selectivity of strip over etch of silicon nitride and silicon oxide.
摘要翻译：提供了一种抗蚀剂去除系统的方法，其包括用于单个基板处理的处理室和处理液体输送系统。初级剥离化学品以一次温度和流速在处理液体输送系统中流动; 在第二混合点以二次温度和流速注入二次剥离化学品。在第三个温度和三次流速的第二个混合点注入三级汽提化学品。将处理液分配到基材表面的一部分上，其中一次温度，二次温度，三次温度，一次流速，二次流速和三次流速中的一个或多个被调节以满足目标剥离速率和条带对氮化硅和氧化硅蚀刻的选择性。

2. 发明申请

US20120247505A1 ETCH SYSTEM AND METHOD FOR SINGLE SUBSTRATE PROCESSING 有权
标题翻译： ETCH系统和单基板处理方法
公开(公告)号：US20120247505A1
公开(公告)日：2012-10-04
申请号：US13076396
申请日：2011-03-30
申请人： IAN J. BROWN , WALLACE P. PRINTZ
发明人： IAN J. BROWN , WALLACE P. PRINTZ
IPC分类号： B08B3/08 , B08B13/00 , H01L21/308
CPC分类号： H01L21/31111 , B08B3/00 , B08B3/024 , B08B3/04 , B08B3/08 , B08B9/08 , B08B2203/007 , H01L21/02041 , H01L21/02052 , H01L21/02057 , H01L21/26506 , H01L21/30604 , H01L21/30612 , H01L21/31133 , H01L21/31144 , H01L21/67017 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086
摘要： Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a set etch selectivity ratio, placing the substrate into the etch processing chamber, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber, wherein the flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a set etch rate and a set etch selectivity ratio of the masking layer to silicon or silicon oxide.
摘要翻译：提供了一种用于在蚀刻处理系统中提高掩模层在衬底上的蚀刻速率和蚀刻选择性的方法和系统，该蚀刻处理系统被配置用于单个衬底处理。该方法包括在升高的压力下获得蒸汽水蒸汽混合物的供应，获得供应的处理液体，用于以设定的蚀刻选择比选择性地在硅或氧化硅上蚀刻掩模层，将衬底放置到蚀刻处理室中，组合处理液体和蒸汽水蒸汽混合物，以及将组合的处理液体和蒸汽水蒸气混合物注入到蚀刻处理室中，其中控制组合的处理液体和蒸汽水蒸汽混合物的流动以保持设定的蚀刻速率以及掩模层与硅或氧化硅的设定蚀刻选择比。

3. 发明授权

US07288483B1 Method and system for patterning a dielectric film 失效
标题翻译：图案化电介质膜的方法和系统
公开(公告)号：US07288483B1
公开(公告)日：2007-10-30
申请号：US11390197
申请日：2006-03-28
申请人： Ian J. Brown
发明人： Ian J. Brown
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76814
摘要： A method and system for patterning a dielectric film such as a low dielectric constant (low-k) material. A dry non-plasma etching process can be implemented to transfer a pattern from a photo-lithographic layer to a hard mask layer, while minimizing the evolution of surface roughness in the sidewall of the etched pattern in the hard mask layer. Once a pattern is transferred to the hard mask layer, the photo-lithographic layer can be removed in order to minimize the exposure of the underlying low-k dielectric film to the ashing or wet stripping process that facilitates removal of the photo-lithographic layer. The dry non-plasma removal process comprises a chemical treatment of the exposed hard mask layer, followed by a thermal treatment of the chemically treated exposed layer. The two steps, chemical and thermal treatment, can be repeated.
摘要翻译：用于图案化诸如低介电常数（低k）材料的电介质膜的方法和系统。可以实施干式非等离子体蚀刻工艺以将图案从光刻层转移到硬掩模层，同时最小化硬掩模层中蚀刻图案的侧壁中的表面粗糙度的演变。一旦将图案转移到硬掩模层，就可以去除光刻层，以便将底层低k电介质膜暴露于有利于去除光刻层的灰化或湿剥离过程中。干燥的非等离子体去除方法包括对暴露的硬掩模层进行化学处理，然后对化学处理的暴露层进行热处理。化学和热处理两个步骤可以重复。

4. 再颁专利

USRE36782E Magnet assembly for use in NMR apparatus 失效
标题翻译：用于NMR装置的磁铁组件
公开(公告)号：USRE36782E
公开(公告)日：2000-07-18
申请号：US668318
申请日：1996-06-26
申请人： Ian J. Brown , John M. Bird , Ian L. McDougall , David Black
发明人： Ian J. Brown , John M. Bird , Ian L. McDougall , David Black
IPC分类号： G01R33/3815 , G01R33/421 , H01F7/22
CPC分类号： G01R33/3815 , G01R33/421
摘要： A magnet assembly (1) particularly for use in NMR apparatus comprises a first superconducting coil assembly (A,A'-C,C') for generating a first magnetic field; and a second superconducting coil assembly (D-F) for generating a second magnetic field. The second superconducting coil assembly (D-F) is electrically connected in series with the first superconducting coil assembly (A,A'-C,C'). Each coil assembly (A,A'-C,C'; D-F) generates magnetic fields where corresponding components are of substantially the same order of magnitude whereby a resultant, uniform magnetic field is generated in a working volume (3). The second magnetic field opposes the first magnetic field externally of the magnet assembly (1).
摘要翻译：特别用于NMR装置的磁体组件（1）包括用于产生第一磁场的第一超导线圈组件（A，A'-C，C'）; 和用于产生第二磁场的第二超导线圈组件（D-F）。第二超导线圈组件（D-F）与第一超导线圈组件（A，A'-C，C'）串联电连接。每个线圈组件（A，A'-C，C'; D-F）产生磁场，其中相应的部件基本上具有相同的数量级，从而在工作容积（3）中产生所得到的均匀的磁场。第二磁场与磁体组件（1）外部的第一磁场相反。

5. 发明授权

US08795952B2 Line pattern collapse mitigation through gap-fill material application 有权
标题翻译：通过间隙填充材料应用减少线路崩溃
公开(公告)号：US08795952B2
公开(公告)日：2014-08-05
申请号：US13031112
申请日：2011-02-18
申请人： Mark H. Somervell , Benjamen M. Rathsack , Ian J. Brown , Steven Scheer , Joshua Hooge
发明人： Mark H. Somervell , Benjamen M. Rathsack , Ian J. Brown , Steven Scheer , Joshua Hooge
IPC分类号： G03F7/30
CPC分类号： G03F7/405 , G03F7/038 , G03F7/0384 , G03F7/2024 , G03F7/30 , G03F7/38 , G03F7/40
摘要： Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.
摘要翻译：公开了一种用于通过在显影后图案漂洗步骤之后施加间隙填充材料处理来减轻光刻工艺中的光致抗蚀剂线图案塌陷的方法和装置。间隙填充材料干燥成填充线图案的间隔空间的固体层，从而防止在后冲洗线图案干燥步骤期间由于毛细管力引起的线图案塌陷。一旦干燥，间隙填充材料通过加热，用紫外线照射，通过施加催化剂化学或通过等离子体蚀刻从线图案解聚，挥发和除去。

6. 发明申请

US20130233351A1 SEQUENTIAL STAGE MIXING FOR A RESIST BATCH STRIP PROCESS 有权
标题翻译：用于电阻条纹工艺的序列级混合
公开(公告)号：US20130233351A1
公开(公告)日：2013-09-12
申请号：US13414554
申请日：2012-03-07
申请人： IAN J. BROWN
发明人： IAN J. BROWN
IPC分类号： B08B3/08 , B08B7/04 , B08B3/10
CPC分类号： G03F7/423 , H01L21/31133 , H01L21/67017 , H01L21/6708 , H01L21/67086
摘要： Provided is a method and system for stripping a resist film on a plurality of substrates in a resist removal system comprising a processing chamber coupled to a recirculation system comprising a recycle sub-system and a bypass sub-system. The recycle sub-system includes a recycle line, an inline heater, a ratio monitor and control system, and recirculation injection device. The bypass sub-system comprises a treatment liquid supply line, a first injection line, a mixing device, and a second injection line. The treatment liquid comprises a primary stripping chemical, secondary stripping chemical, tertiary stripping chemical, and one or more reactive products. One or more of the temperatures, concentrations, and/or flow rates of the recirculated treatment liquid and/or injected stripping chemicals are adjusted to meet a target strip rate and selectivity for strip over etch of silicon nitride or silicon oxide.
摘要翻译：提供了一种用于在抗蚀剂去除系统中在多个基板上剥离抗蚀剂膜的方法和系统，其包括耦合到包括再循环子系统和旁路子系统的再循环系统的处理室。回收子系统包括再循环管线，在线加热器，比率监视和控制系统以及再循环注射装置。旁通子系统包括处理液体供应管线，第一注入管线，混合装置和第二注入管线。处理液体包括初级剥离化学品，二次剥离化学品，三级剥离化学品和一种或多种反应性产物。调节再循环处理液体和/或注入的汽提化学品的一种或多种温度，浓度和/或流速以满足氮化硅或氧化硅剥离的目标剥离速率和选择性。

7. 发明授权

US08083862B2 Method and system for monitoring contamination on a substrate 有权
标题翻译：用于监测基材上污染的方法和系统
公开(公告)号：US08083862B2
公开(公告)日：2011-12-27
申请号：US11684203
申请日：2007-03-09
申请人： Ian J. Brown
发明人： Ian J. Brown
IPC分类号： B08B5/00
CPC分类号： B08B7/0071 , H01L21/67028 , H01L21/67253 , Y10S438/906
摘要： A method and system for measuring contamination, such as metal contamination, on a substrate. A dry cleaning system is utilized for non-destructive, occasional removal of contamination, such as metal containing contamination, on a substrate, whereby a monitoring system coupled to the exhaust of the dry cleaning system is employed to determine the relative level of contamination on the substrate prior to dry cleaning.
摘要翻译：用于测量衬底上的污染物（例如金属污染）的方法和系统。干洗系统用于在基材上非破坏性地偶尔去除诸如含金属的污染物的污染物，由此使用耦合到干洗系统的排气口的监测系统来确定污染物的相对水平干燥前的底物。

8. 发明申请

US20080142988A1 METHOD FOR SELECTIVE REMOVAL OF DAMAGED MULTI-STACK BILAYER FILMS 有权
标题翻译：用于选择性去除损坏的多层双层膜的方法
公开(公告)号：US20080142988A1
公开(公告)日：2008-06-19
申请号：US11611611
申请日：2006-12-15
申请人： Sandra Hyland , Ian J. Brown , Yannick Feurprier
发明人： Sandra Hyland , Ian J. Brown , Yannick Feurprier
IPC分类号： H01L23/48 , H01L21/302
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826
摘要： A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.
摘要翻译：描述了在蚀刻工艺，灰化处理或湿式清洁工艺之后去除损坏的低介电常数材料的方法。实施干燥的非等离子体去除工艺以在特征形成之后去除特征上的薄层损伤材料。干燥的非等离子体去除方法包括对损坏的材料进行化学处理，然后对化学处理的表面层进行热处理。化学和热处理两个步骤可以重复。

9. 发明授权

US4587504A Magnet assembly for use in NMR apparatus 失效
公开(公告)号：US4587504A
公开(公告)日：1986-05-06
申请号：US669311
申请日：1984-11-07
申请人： Ian J. Brown , John M. Bird , Ian L. McDougall , David Black
发明人： Ian J. Brown , John M. Bird , Ian L. McDougall , David Black
IPC分类号： A61B5/055 , G01R33/20 , G01R33/3815 , G01R33/3875 , G01R33/421 , H01F7/20 , H01F7/22
CPC分类号： G01R33/421 , G01R33/3815 , G01R33/3875 , Y10S505/879
摘要： A magnet assembly (1) particularly for use in NMR apparatus comprises a first superconducting coil assembly (A,A'-C,C') for generating a first magnetic field; and a second superconducting coil assembly (D-F) for generating a second magnetic field. The second superconducting coil assembly (D-F) is electrically connected in series with the first superconducting coil assembly (A,A'-C,C'). Each coil assembly (A,A'-C,C'; D-F) generates magnetic fields where corresponding components are of substantially the same order of magnitude whereby a resultant, uniform magnetic field is generated in a working volume (3). The second magnetic field opposes the first magnetic field externally of the magnet assembly (1).

10. 发明授权

US4584549A Magnet system 失效
标题翻译：磁铁系统
公开(公告)号：US4584549A
公开(公告)日：1986-04-22
申请号：US672274
申请日：1984-11-16
申请人： Ian J. Brown , John M. Bird
发明人： Ian J. Brown , John M. Bird
IPC分类号： A61B10/00 , A61B5/055 , G01R33/38 , G01R33/421 , G12B17/02 , H01F7/20 , H05K9/00 , H01F7/00
CPC分类号： H05K9/00
摘要： A magnet system comprises magnetic field generating means such as a superconducting magnet (12) and a shield including a number of sheets (9) of magnetic material, the size (l.sub.z, l.sub.x) and position (r) of the or each sheet (9) relatively to the magnetic field generating means (12) being such that in use at the edge of the sheet or sheets the component of magnetization (M.sub.z) parallel to the sheet in the direction of the magnetic field is less than or substantially equal to zero.
摘要翻译：磁体系统包括磁场产生装置，例如超导磁体（12）和包括多个磁性材料片材（9）的屏蔽件，片材（9）的尺寸（lz，lx）和位置（r））相对于磁场产生装置（12）使得在使用中在片材或片材的边缘处，在磁场方向平行于片材的磁化分量（Mz）小于或基本上等于零。

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