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1. 发明申请

US20110053362A1 METHOD OF FORMING A MASK PATTERN, METHOD OF FORMING A MINUTE PATTERN, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：形成掩模图案的方法，形成分钟图案的方法和使用其制造半导体器件的方法
公开(公告)号：US20110053362A1
公开(公告)日：2011-03-03
申请号：US12873574
申请日：2010-09-01
申请人： Hyoung-Hee KIM , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
发明人： Hyoung-Hee KIM , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
IPC分类号： H01L21/28 , G03F7/20
CPC分类号： H01L21/28123 , H01L21/76229 , H01L27/11526 , H01L27/11529
摘要： A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.
摘要翻译：形成掩模图案的方法，形成微小图案的方法以及使用其形成半导体器件的方法，所述掩模图案的形成方法包括在基板上形成第一掩模图案; 在第一掩模图案上形成第一初步封盖层; 向第一初步封盖图案照射能量以形成与第一掩模图案离子键合的第二初步封盖层; 向第二初步封盖层施加酸以形成封盖层; 在所述封盖层之间形成第二掩模层，所述第二掩模层的溶解度低于所述封盖层的溶解度; 并去除覆盖层以形成第二掩模图案。

2. 发明授权

US08623739B2 Method of manufacturing semiconductor device using acid diffusion 有权
标题翻译：使用酸扩散制造半导体器件的方法
公开(公告)号：US08623739B2
公开(公告)日：2014-01-07
申请号：US13185897
申请日：2011-07-19
申请人： Hyung-rae Lee , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
发明人： Hyung-rae Lee , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
IPC分类号： H01L21/76
CPC分类号： H01L27/10891 , G03F7/40 , H01L21/0206 , H01L21/823842 , H01L27/0207 , H01L27/10876 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/66606
摘要： A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.
摘要翻译：一种制造半导体器件的方法包括在衬底上的第一区域上形成抗蚀剂图案，使包含酸源的除去溶液与抗蚀剂图案接触，并与衬底的第二区域分离，残留在第二区域上的抗蚀剂残留物通过使用从除去溶液中的酸源获得的酸，并从底物除去分解的抗蚀剂残留物和除去溶液的底物区域。

3. 发明申请

US20130034965A1 METHODS OF FORMING FINE PATTERNS USING DRY ETCH-BACK PROCESSES 审中-公开
标题翻译：使用干蚀刻工艺形成精细图案的方法
公开(公告)号：US20130034965A1
公开(公告)日：2013-02-07
申请号：US13564611
申请日：2012-08-01
申请人： Hyoung-Hee KIM , Yool Kang , Song-Se Yi , Young-Ho Kim , Jae-Ho Kim
发明人： Hyoung-Hee KIM , Yool Kang , Song-Se Yi , Young-Ho Kim , Jae-Ho Kim
IPC分类号： H01L21/308
CPC分类号： H01L21/0274 , H01L21/0337 , H01L21/28123 , H01L21/31144 , H01L29/40114 , H01L29/40117
摘要： In a method of fabricating patterns in an integrated circuit device, first mask patterns, sacrificial patterns, and second mask patterns are formed on a target layer such that the sacrificial patterns are provided between sidewalls of adjacent ones of the first and second mask patterns. The sacrificial patterns between the sidewalls of the adjacent ones of the first and second mask patterns are selectively removed using a dry etch-back process, and the target layer is patterned using the first and second mask patterns as a mask.
摘要翻译：在制造集成电路器件中的图案的方法中，在目标层上形成第一掩模图案，牺牲图案和第二掩模图案，使得牺牲图案设置在相邻的第一和第二掩模图案的侧壁之间。使用干蚀刻工艺选择性地去除第一和第二掩模图案中相邻的掩模图案的侧壁之间的牺牲图案，并且使用第一和第二掩模图案作为掩模对目标层进行图案化。

4. 发明申请

US20110244689A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20110244689A1
公开(公告)日：2011-10-06
申请号：US13076856
申请日：2011-03-31
申请人： So-ra Han , Yool Kang , Seong-ho Moon , Kyung-hwan Yoon , Hyoung-hee Kim , Seong-woon Choi , Seok-hwan Oh
发明人： So-ra Han , Yool Kang , Seong-ho Moon , Kyung-hwan Yoon , Hyoung-hee Kim , Seong-woon Choi , Seok-hwan Oh
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/3086 , H01L21/76229
摘要： A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern.
摘要翻译：一种制造半导体器件的方法包括：通过使用包括具有可被酸去保护的保护基的聚合物的材料在基板上形成第一掩模图案，所述第一掩模图案具有多个孔; 在所述第一掩模图案的暴露表面上形成覆盖层，所述封盖层包括酸源; 将酸源扩散到第一掩模图案中，使得保护基团在第一掩模图案中从聚合物变得不可保护; 在所述覆盖层上形成第二掩模层，所述第二掩模层与所述第一掩模图案分离并填充所述第一掩模图案中的所述多个孔; 以及通过去除所述封盖层和所述第一掩模图案，在所述多个孔中形成多个第二掩模图案。

5. 发明申请

US20100093172A1 METHOD OF FORMING FINE PATTERNS OF A SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体器件精细图案的方法
公开(公告)号：US20100093172A1
公开(公告)日：2010-04-15
申请号：US12432357
申请日：2009-04-29
申请人： Hyoung-hee KIM , Yool KANG , Seong-woon CHOI , Jin-young YOON
发明人： Hyoung-hee KIM , Yool KANG , Seong-woon CHOI , Jin-young YOON
IPC分类号： H01L21/308 , H01L21/312
CPC分类号： H01L21/0273 , Y10S430/106 , Y10S430/114
摘要： A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.
摘要翻译：一种形成半导体器件的精细图案的方法包括在衬底上形成多个第一掩模图案，使得多个第一掩模图案在平行于所述第一掩模图案的主表面的方向上彼此分开位于其间的空间形成多个由第一材料形成的封盖膜，该第一材料在溶剂中具有第一溶解性，并且在多个第一掩模图案的侧壁和顶表面上形成。该方法还包括形成由溶剂中第二溶解度小于第一溶解度的第二材料形成的第二掩模层，以填充位于多个第一掩模图案之间的空间，并形成多个第二掩模图案对应于残留在位于多个第一掩模图案之间的空间中的第二掩模层的残留部分，在使用溶剂除去多个封盖膜和第二掩模层的一部分之后。

6. 发明授权

US08173358B2 Method of forming fine patterns of a semiconductor device 有权
标题翻译：形成半导体器件精细图案的方法
公开(公告)号：US08173358B2
公开(公告)日：2012-05-08
申请号：US12432357
申请日：2009-04-29
申请人： Hyoung-hee Kim , Yool Kang , Seong-woon Choi , Jin-young Yoon
发明人： Hyoung-hee Kim , Yool Kang , Seong-woon Choi , Jin-young Yoon
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： H01L21/0273 , Y10S430/106 , Y10S430/114
摘要： A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.
摘要翻译：一种形成半导体器件的精细图案的方法包括在衬底上形成多个第一掩模图案，使得多个第一掩模图案在平行于所述第一掩模图案的主表面的方向上彼此分开位于其间的空间形成多个由第一材料形成的封盖膜，该第一材料在溶剂中具有第一溶解性，并且在多个第一掩模图案的侧壁和顶表面上形成。该方法还包括形成由溶剂中第二溶解度小于第一溶解度的第二材料形成的第二掩模层，以填充位于多个第一掩模图案之间的空间，并形成多个第二掩模图案对应于残留在位于多个第一掩模图案之间的空间中的第二掩模层的残留部分，在使用溶剂除去多个封盖膜和第二掩模层的一部分之后。

7. 发明授权

US08227349B2 Method of forming a mask pattern, method of forming a minute pattern, and method of manufacturing a semiconductor device using the same 有权
标题翻译：形成掩模图案的方法，形成微小图案的方法以及使用其形成半导体器件的方法
公开(公告)号：US08227349B2
公开(公告)日：2012-07-24
申请号：US12873574
申请日：2010-09-01
申请人： Hyoung-Hee Kim , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
发明人： Hyoung-Hee Kim , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
IPC分类号： H01L21/461 , H01L21/302 , H01L21/469 , H01L21/3205
CPC分类号： H01L21/28123 , H01L21/76229 , H01L27/11526 , H01L27/11529
摘要： A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.
摘要翻译：形成掩模图案的方法，形成微小图案的方法以及使用其形成半导体器件的方法，所述掩模图案的形成方法包括在基板上形成第一掩模图案; 在第一掩模图案上形成第一初步封盖层; 向第一初步封盖图案照射能量以形成与第一掩模图案离子键合的第二初步封盖层; 向第二初步封盖层施加酸以形成封盖层; 在所述封盖层之间形成第二掩模层，所述第二掩模层的溶解度低于所述封盖层的溶解度; 并去除覆盖层以形成第二掩模图案。

8. 发明申请

US20120028434A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ACID DIFFUSION 有权
标题翻译：使用酸性扩散制造半导体器件的方法
公开(公告)号：US20120028434A1
公开(公告)日：2012-02-02
申请号：US13185897
申请日：2011-07-19
申请人： Hyung-rae LEE , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
发明人： Hyung-rae LEE , Yool Kang , Kyung-hwan Yoon , Hyoung-hee Kim , So-ra Han , Tae-hoi Park
IPC分类号： H01L21/306 , H01L21/76
CPC分类号： H01L27/10891 , G03F7/40 , H01L21/0206 , H01L21/823842 , H01L27/0207 , H01L27/10876 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/66606
摘要： A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.
摘要翻译：一种制造半导体器件的方法包括在衬底上的第一区域上形成抗蚀剂图案，使包含酸源的除去溶液与抗蚀剂图案接触，并与衬底的第二区域分离，残留在第二区域上的抗蚀剂残留物通过使用从除去溶液中的酸源获得的酸，并从底物除去分解的抗蚀剂残留物和除去溶液的底物区域。

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