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1. 发明申请

US20140102890A1 SPUTTERING APPARATUS 审中-公开
标题翻译：溅射装置
公开(公告)号：US20140102890A1
公开(公告)日：2014-04-17
申请号：US13782083
申请日：2013-03-01
申请人： YoungJae JUNG , Hun Jung YI , Eun-Ju SONG
发明人： YoungJae JUNG , Hun Jung YI , Eun-Ju SONG
IPC分类号： C23C14/34
CPC分类号： C23C14/3407
摘要： A sputtering apparatus includes a substrate, a sputtering target disposed to face the substrate and formed of a sputtering material to be deposited on the substrate, wherein the sputtering target collides with an ionized gas particle and the sputtering material is separated from the sputtering target by the collision of the ionized gas particle with the sputtering target is deposited on the substrate, a supporter that supports a lower surface and a side surface of the sputtering target, and an insulating cover that covers an upper surface of the supporter supporting the side surface of the sputtering target. The insulating cover includes a plurality of recesses recessed downwardly from an upper surface of the insulating cover and a plurality of protrusions protruding upwardly between the recesses.
摘要翻译：溅射装置包括：基板，设置成面对基板并由溅射材料形成的溅射靶，沉积在基板上，其中溅射靶与电离气体粒子碰撞，溅射材料与溅射靶分离，电离气体粒子与溅射靶的碰撞沉积在基板上，支撑溅射靶的下表面和侧面的支撑体以及覆盖支撑着支撑体的侧面的支撑体的上表面的绝缘盖溅射靶。绝缘盖包括从绝缘盖的上表面向下凹陷的多个凹部和在凹部之间向上突出的多个突起。

2. 发明授权

US07959884B2 Apparatus for purifying air and purifying method thereof 失效
标题翻译：净化空气的设备及其净化方法
公开(公告)号：US07959884B2
公开(公告)日：2011-06-14
申请号：US12619144
申请日：2009-11-16
申请人： Hun-Jung Yi , Seung-Ki Cha , Chang-su Lim
发明人： Hun-Jung Yi , Seung-Ki Cha , Chang-su Lim
IPC分类号： B01D53/56 , B01D53/74
CPC分类号： B01D53/56 , B01D46/0032 , B01D46/10 , B01D47/05 , B01D50/006 , B01D53/32 , B01D2257/404 , B01D2259/818 , Y10S423/01
摘要： An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO3, an eliminator eliminating the NO3 converted in the plasma module and the water contained in the air and passing pure air through the eliminator and out of the air purifying apparatus and a water tank storing the water received from the eliminator, thereby heightening the removal efficiency of NOx from the air.
摘要翻译：空气净化装置包括用于产生空气流的空气流产生装置，向流过空气流产生装置的空气喷射水的喷嘴，对包含从喷嘴喷射的水的空气进行等离子体反应的等离子体模块，并且将空气中的NOx氧化并将其转化为NO 3，除去在等离子体组件中转化的NO 3和空气中所含的水的消除器，并将纯净空气通过除气器排出空气净化装置和储存水的水箱从消除器接收，从而提高NOx从空气中的去除效率。

3. 发明申请

US20100158778A1 APPARATUS FOR PURIFYING AIR AND PURIFYING METHOD THEREOF 失效
标题翻译：用于净化空气和净化方法的装置
公开(公告)号：US20100158778A1
公开(公告)日：2010-06-24
申请号：US12619144
申请日：2009-11-16
申请人： Hun-Jung YI , Seung-Ki Cha , Chang-su Lim
发明人： Hun-Jung YI , Seung-Ki Cha , Chang-su Lim
IPC分类号： B01D53/56 , B01D50/00
CPC分类号： B01D53/56 , B01D46/0032 , B01D46/10 , B01D47/05 , B01D50/006 , B01D53/32 , B01D2257/404 , B01D2259/818 , Y10S423/01
摘要： An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO3, an eliminator eliminating the NO3 converted in the plasma module and the water contained in the air and passing pure air through the eliminator and out of the air purifying apparatus and a water tank storing the water received from the eliminator, thereby heightening the removal efficiency of NOx from the air.
摘要翻译：空气净化装置包括用于产生空气流的空气流产生装置，向流过空气流产生装置的空气喷射水的喷嘴，对包含从喷嘴喷射的水的空气进行等离子体反应的等离子体模块，并且将空气中的NOx氧化并将其转化为NO 3，除去在等离子体组件中转化的NO 3和空气中所含的水的消除器，并将纯净空气通过除气器排出空气净化装置，以及储存水的水箱从消除器接收，从而提高NOx从空气中的去除效率。

4. 发明授权

US07386944B2 Method and apparatus for drying a wafer, and an apparatus for cleaning and drying a wafer 失效
标题翻译：用于干燥晶片的方法和装置，以及用于清洁和干燥晶片的装置
公开(公告)号：US07386944B2
公开(公告)日：2008-06-17
申请号：US10983023
申请日：2004-11-05
申请人： Hun-Jung Yi , Won-Young Chung , Sang-Oh Park , Ye-Ro Lee
发明人： Hun-Jung Yi , Won-Young Chung , Sang-Oh Park , Ye-Ro Lee
IPC分类号： F26B21/06 , F26B21/12 , B08B3/00
CPC分类号： H01L21/67051 , H01L21/67028 , Y10S134/902
摘要： A method an apparatus for drying a wafer, and an apparatus for cleaning and drying a wafer are provided. In the apparatus for cleaning and drying a wafer, the wafer is dipped into a cleaning solution in a cleaning tank. The wafer is then dried using a drying gas in a drying chamber disposed over the cleaning tank. A shutter separates the cleaning tank from the drying tank. A wafer boat moves the wafer vertically between the cleaning tank and the drying tank. Nozzles for providing the cleaning solution onto the wafer are disposed at both inner sides of the drying tank. The nozzles are connected to a drying gas supply unit to alternately and periodically provide the drying gas onto the wafer.
摘要翻译：提供了一种用于干燥晶片的设备以及用于清洁和干燥晶片的设备。在用于清洗和干燥晶片的装置中，将晶片浸入清洗槽中的清洁溶液中。然后使用设置在清洁槽上的干燥室中的干燥气体干燥晶片。快门将清洁箱与干燥箱分开。晶片舟将晶片在清洁槽和干燥箱之间垂直移动。用于在晶片上提供清洁溶液的喷嘴设置在干燥箱的两侧。喷嘴连接到干燥气体供应单元以交替地并周期性地将干燥气体提供到晶片上。

5. 发明授权

US07351667B2 Etching solution for silicon oxide method of manufacturing a semiconductor device using the same 失效
标题翻译：用于制造使用其的半导体器件的氧化硅蚀刻方法
公开(公告)号：US07351667B2
公开(公告)日：2008-04-01
申请号：US11580937
申请日：2006-10-16
申请人： Dong-Won Hwang , Hun-Jung Yi , Kwang-Shin Lim , Jung-Dae Park
发明人： Dong-Won Hwang , Hun-Jung Yi , Kwang-Shin Lim , Jung-Dae Park
IPC分类号： H01L21/469
CPC分类号： H01L27/10855 , H01L21/31111 , H01L21/76816
摘要： An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.
摘要翻译：在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。

6. 发明申请

US20060231125A1 Apparatus and method for cleaning a semiconductor wafer 审中-公开
标题翻译：用于清洁半导体晶片的装置和方法
公开(公告)号：US20060231125A1
公开(公告)日：2006-10-19
申请号：US11377963
申请日：2006-03-17
申请人： Hun-Jung Yi
发明人： Hun-Jung Yi
IPC分类号： C23G1/00 , B08B3/00 , B08B7/00
CPC分类号： H01L21/02054 , H01L21/67028 , H01L21/67051
摘要： A cleaning apparatus is provided comprising a process chamber defining a work space, a supporter apparatus for rotating a wafer, the supporter apparatus being located in the work space and the wafer being mounted on the supporter apparatus such that a processing surface of the wafer is upwardly facing, an organic solvent supplying nozzle for supplying an organic solvent into the work space to the processing surface of the wafer mounted on the supporter apparatus, and a dry gas supplying nozzle for supplying an organic solvent vapor into the work space and forming an organic solvent atmosphere therein. Thus, water remaining on the wafer may be readily removed.
摘要翻译：提供一种清洁装置，其包括限定工作空间的处理室，用于旋转晶片的支撑装置，所述支撑装置位于所述工作空间中，并且所述晶片安装在所述支撑装置上，使得所述晶片的处理表面向上面向有机溶剂供给喷嘴，用于将有机溶剂供给到安装在支撑装置上的晶片的处理表面的工作空间，以及用于将有机溶剂蒸气供给到工作空间中并形成有机溶剂的干燥气体供给喷嘴气氛。因此，可以容易地去除残留在晶片上的水。

7. 发明申请

US20050039776A1 Apparatus and method for cleaning semiconductor substrates 审中-公开
标题翻译：用于清洁半导体衬底的装置和方法
公开(公告)号：US20050039776A1
公开(公告)日：2005-02-24
申请号：US10827512
申请日：2004-04-19
申请人： Hun-Jung Yi , Sang-Oh Park
发明人： Hun-Jung Yi , Sang-Oh Park
IPC分类号： H01L21/304 , B08B3/02 , B08B3/04 , B08B3/00 , B08B1/02
CPC分类号： B08B3/02 , B08B3/048
摘要： An apparatus for cleaning semiconductor substrates includes a chamber having a cleaning room and a drying room disposed over the cleaning room. The cleaning room and the drying room are separated or placed in communication with one another by a separation plate. An exhaust path is formed at a central portion of the separation plate. As de-ionized water (DI water) filling the cleaning room is drained during a dry process, the inside of the drying room is decompressed, and a drying fluid in the drying room flows from the drying room to the cleaning room along the exhaust path.
摘要翻译：用于清洁半导体衬底的设备包括具有清洁室和设置在清洁室上方的干燥室的室。清洁室和干燥室通过分隔板彼此分离或放置成彼此连通。排气路径形成在分离板的中心部分。由于在干燥过程中排出填充清洁室的去离子水（去离子水），干燥室内部被减压，干燥室内的干燥液沿着排气通路从干燥室流向清洗室。

8. 发明申请

US20120006351A1 Methods Of Cleaning And Plasma Processing Apparatus For Manufacturing Semiconductors 审中-公开
标题翻译：清洁等离子体处理装置制造半导体的方法
公开(公告)号：US20120006351A1
公开(公告)日：2012-01-12
申请号：US13176868
申请日：2011-07-06
申请人： Hyun-Su Jun , Hun-Jung Yi , Sang-jean Jeon , Se-Yeon Kim , In-Joong Kim
发明人： Hyun-Su Jun , Hun-Jung Yi , Sang-jean Jeon , Se-Yeon Kim , In-Joong Kim
IPC分类号： B08B7/00
CPC分类号： H01J37/32862
摘要： A cleaning method for cleaning a semiconductor manufacturing apparatus may include generating plasma from a cleaning gas. The semiconductor manufacturing apparatus may be cleaned with the plasma. A positive direct-current voltage may be applied to an ESC of the semiconductor manufacturing apparatus during a cleaning of the semiconductor manufacturing apparatus. A negative direct-current voltage may be applied to the ESC during the cleaning of the semiconductor manufacturing apparatus. Also, a wall of the process chamber may be cleaned by applying the positive direct-current voltage to the ESC.
摘要翻译：用于清洁半导体制造装置的清洁方法可以包括从清洁气体产生等离子体。可以用等离子体清洁半导体制造装置。在半导体制造装置的清洁期间，可以向半导体制造装置的ESC施加正的直流电压。在清洁半导体制造装置期间，可以向ESC施加负的直流电压。此外，可以通过将正的直流电压施加到ESC来清洁处理室的壁。

9. 发明授权

US07556712B2 Laser cleaning of backside of wafer for photolithographic processing 失效
标题翻译：用于光刻处理的晶片背面的激光清洗
公开(公告)号：US07556712B2
公开(公告)日：2009-07-07
申请号：US11566624
申请日：2006-12-04
申请人： Hun-Jung Yi , Seung-Ki Chae
发明人： Hun-Jung Yi , Seung-Ki Chae
IPC分类号： C23F1/00 , H01L21/00
CPC分类号： G03F7/2022 , G03F7/70925 , H01L21/67028 , H01L21/67225
摘要： A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.
摘要翻译：可以通过包括用于将光刻的光学照明操作进行到晶片前侧进行照明的照明模块的装置清洁晶片的背面之后进行光刻工艺，以及用于进行清洁操作的清洁模块晶圆背面。提供从晶片背面去除颗粒的能力并消除由于晶片夹紧误差引起的散焦效应，这些和其它实施例提高了光刻工艺的可靠性，以及半导体器件的生产率和产量。

10. 发明申请

US20080216347A1 Apparatus and method for drying semiconductor substrates 审中-公开
标题翻译：用于干燥半导体衬底的装置和方法
公开(公告)号：US20080216347A1
公开(公告)日：2008-09-11
申请号：US12078554
申请日：2008-04-01
申请人： Hun-Jung Yi , Sang-Oh Park
发明人： Hun-Jung Yi , Sang-Oh Park
IPC分类号： F26B3/00
CPC分类号： H01L21/67034
摘要： A drying apparatus and method of drying a wafer including supplying a drying material for drying a wafer and controlling a flow of the drying material to uniformly or substantially uniformly dry the wafer. The flow of the drying material may be controlled by a vent unit including at least one part for controlling the flow of the drying material to uniformly or substantially uniformly dry the wafer.
摘要翻译：一种干燥装置和干燥晶片的方法，包括提供用于干燥晶片的干燥材料并控制干燥材料的流动以均匀或基本均匀地干燥晶片。干燥材料的流动可以由包括至少一个部分的排气单元控制，用于控制干燥材料的流动以均匀地或基本均匀地干燥晶片。

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