会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Pressure detector and pressure detector array
    • 压力检测器和压力检测器阵列
    • US08258554B2
    • 2012-09-04
    • US12785998
    • 2010-05-24
    • Hsin- Fei MengSheng-Fu HorngYu-Chiang ChaoChun-Yu ChenWei-Jen Lai
    • Hsin- Fei MengSheng-Fu HorngYu-Chiang ChaoChun-Yu ChenWei-Jen Lai
    • H01L29/84
    • G01L1/005H01L51/057
    • A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
    • 公开了一种具有有机晶体管,压力检测层和第一电极的压力检测器。 有机晶体管包括发射极,有机层,形成有孔的栅极和集电极,有机层夹在发射极和集电极之间。 压力检测层形成在有机晶体管上,使得集电体夹在有机层和压力检测层之间。 第一电极形成在压力检测层上,使得压力检测层夹在集电体和第一电极之间。 压力检测器的有源区域的面积由电极的重叠面积确定,从而减小电极的间距,从而减小压力检测器的尺寸。
    • 5. 发明授权
    • Organic-semiconductor-based infrared receiving device
    • 基于有机半导体的红外接收装置
    • US07973308B2
    • 2011-07-05
    • US12385967
    • 2009-04-24
    • Hsin-Fei MengSheng-Fu HorngChia-Ming Yang
    • Hsin-Fei MengSheng-Fu HorngChia-Ming Yang
    • H01L29/08
    • H01L51/4253B82Y10/00H01L51/0036H01L51/0047Y02E10/549Y02P70/521
    • An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.
    • 基于有机半导体的红外线接收装置包括具有正层和负层以形成电场的电极层,以及位于正层和负层之间的传输层,并且具有第一和第二预定材料 预定比例。 来自光源的红外光的能量被接收在第一和第二材料之间的界面处。 可以增加输送层的厚度,以增强红外光范围内的光吸收,形成电子 - 空穴对,然后将其分开以形成由电场驱动的多个电子和空穴移动到负层, 正层,从而产生预定的光电流。
    • 7. 发明授权
    • Organic field effect transistor and method of manufacturing the same
    • 有机场效应晶体管及其制造方法
    • US07955915B2
    • 2011-06-07
    • US12462101
    • 2009-07-29
    • Chien-Cheng LiuHsin-Fei MengSheng-Fu Horng
    • Chien-Cheng LiuHsin-Fei MengSheng-Fu Horng
    • H01L21/84
    • H01L51/0533H01L51/0545
    • The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.
    • 本发明公开了一种有机场效应晶体管及其制造方法。 有机场效应晶体管包括顶接触型或底接触型,其制造方法包括以下步骤:提供基板,在基板上形成金属栅极,在其上形成无机绝缘层 基板和金属栅极,绝缘层的表面被抛光,绝缘层上的孔中填充有机填料作为绝缘处理,在无机绝缘层上形成改性层,最后形成有机半导体层, 源极和漏极形成。 通过结合有机材料的简单液化过程和无机材料的高稳定性的优点以及控制过程的操作条件,本发明可以有效地实现器件的高载流子迁移率和高开/关比。
    • 8. 发明申请
    • Passive matrix organic light emitting diode display device
    • 无源矩阵有机发光二极管显示装置
    • US20090230383A1
    • 2009-09-17
    • US12153233
    • 2008-05-15
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • H01L51/52
    • H01L27/3288H01L51/057H01L51/5203
    • A passive matrix organic light emitting diode display device comprises a plurality of vertical organic light emitting transistors, each having a first collector, a first grid/base, and a first emitter. Therein, the first collectors are electrically connected and arranged parallelly to form a plurality of first scan units, and the first grids/bases are electrically connected and arranged parallelly to form a plurality of second scan units, while the first emitters are integrated into a common electrode, in which the first scan units and the second scan units are perpendicularly crossed. By perpendicularly combining vertical transistors onto organic light emitting diodes so as to drive the organic light emitting diodes, an active area as well as a luminance of the organic light emitting diode display device are enhanced and consequently an aperture ratio of each pixel unit in the organic light emitting diode display device is increased.
    • 无源矩阵有机发光二极管显示装置包括多个垂直有机发光晶体管,每个具有第一集电极,第一栅极/基极和第一发射极。 其中,第一收集器被电连接并且平行布置以形成多个第一扫描单元,并且第一栅极/底座被电连接并平行布置以形成多个第二扫描单元,而第一发射器被集成到共同的 电极,其中第一扫描单元和第二扫描单元垂直交叉。 通过将垂直晶体管垂直组合到有机发光二极管上以驱动有机发光二极管,有机发光二极管显示装置的有源面积和亮度得到增强,因此有机发光二极管显示装置中的每个像素单元的开口率 发光二极管显示装置增加。
    • 9. 发明申请
    • VERTICAL ORGANIC TRANSISTOR
    • 垂直有机晶体管
    • US20090181513A1
    • 2009-07-16
    • US12389580
    • 2009-02-20
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • Hsin-Fei MengSheng-Fu HorngYu-Chiang Chao
    • H01L21/331
    • H01L51/0504H01L51/0036H01L51/0037H01L51/057
    • A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
    • 提供一种垂直有机晶体管及其制造方法,其中发射极,具有开口的栅极和集电极依次布置在基板的上方。 两个有机半导体层分别介于发射极和栅极之间,并具有开口,栅格与开口和集电极之间。 通道长度简单地由有机半导体层的厚度决定。 集电极电流取决于发射极和电网开口之间的电位差所贡献的空间电荷限制电流。 并且电网电压因此可以有效地控制集电极电流。 此外,本发明的垂直有机晶体管的制造工艺简单并且不会使用光刻工艺。