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1. 发明授权

US08258554B2 Pressure detector and pressure detector array 有权
标题翻译：压力检测器和压力检测器阵列
公开(公告)号：US08258554B2
公开(公告)日：2012-09-04
申请号：US12785998
申请日：2010-05-24
申请人： Hsin- Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao , Chun-Yu Chen , Wei-Jen Lai
发明人： Hsin- Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao , Chun-Yu Chen , Wei-Jen Lai
IPC分类号： H01L29/84
CPC分类号： G01L1/005 , H01L51/057
摘要： A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
摘要翻译：公开了一种具有有机晶体管，压力检测层和第一电极的压力检测器。有机晶体管包括发射极，有机层，形成有孔的栅极和集电极，有机层夹在发射极和集电极之间。压力检测层形成在有机晶体管上，使得集电体夹在有机层和压力检测层之间。第一电极形成在压力检测层上，使得压力检测层夹在集电体和第一电极之间。压力检测器的有源区域的面积由电极的重叠面积确定，从而减小电极的间距，从而减小压力检测器的尺寸。

2. 发明申请

US20090230383A1 Passive matrix organic light emitting diode display device 审中-公开
标题翻译：无源矩阵有机发光二极管显示装置
公开(公告)号：US20090230383A1
公开(公告)日：2009-09-17
申请号：US12153233
申请日：2008-05-15
申请人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
发明人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
IPC分类号： H01L51/52
CPC分类号： H01L27/3288 , H01L51/057 , H01L51/5203
摘要： A passive matrix organic light emitting diode display device comprises a plurality of vertical organic light emitting transistors, each having a first collector, a first grid/base, and a first emitter. Therein, the first collectors are electrically connected and arranged parallelly to form a plurality of first scan units, and the first grids/bases are electrically connected and arranged parallelly to form a plurality of second scan units, while the first emitters are integrated into a common electrode, in which the first scan units and the second scan units are perpendicularly crossed. By perpendicularly combining vertical transistors onto organic light emitting diodes so as to drive the organic light emitting diodes, an active area as well as a luminance of the organic light emitting diode display device are enhanced and consequently an aperture ratio of each pixel unit in the organic light emitting diode display device is increased.
摘要翻译：无源矩阵有机发光二极管显示装置包括多个垂直有机发光晶体管，每个具有第一集电极，第一栅极/基极和第一发射极。其中，第一收集器被电连接并且平行布置以形成多个第一扫描单元，并且第一栅极/底座被电连接并平行布置以形成多个第二扫描单元，而第一发射器被集成到共同的电极，其中第一扫描单元和第二扫描单元垂直交叉。通过将垂直晶体管垂直组合到有机发光二极管上以驱动有机发光二极管，有机发光二极管显示装置的有源面积和亮度得到增强，因此有机发光二极管显示装置中的每个像素单元的开口率发光二极管显示装置增加。

3. 发明申请

US20090181513A1 VERTICAL ORGANIC TRANSISTOR 有权
标题翻译：垂直有机晶体管
公开(公告)号：US20090181513A1
公开(公告)日：2009-07-16
申请号：US12389580
申请日：2009-02-20
申请人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
发明人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
IPC分类号： H01L21/331
CPC分类号： H01L51/0504 , H01L51/0036 , H01L51/0037 , H01L51/057
摘要： A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
摘要翻译：提供一种垂直有机晶体管及其制造方法，其中发射极，具有开口的栅极和集电极依次布置在基板的上方。两个有机半导体层分别介于发射极和栅极之间，并具有开口，栅格与开口和集电极之间。通道长度简单地由有机半导体层的厚度决定。集电极电流取决于发射极和电网开口之间的电位差所贡献的空间电荷限制电流。并且电网电压因此可以有效地控制集电极电流。此外，本发明的垂直有机晶体管的制造工艺简单并且不会使用光刻工艺。

4. 发明申请

US20120325318A1 SOLAR CELL AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120325318A1
公开(公告)日：2012-12-27
申请号：US13167068
申请日：2011-06-23
申请人： Hsin-Fei Meng , Hsiao-Wen Zan , Sheng-Fu Horng , Yu-Chiang Chao , Yuan-Pai Lin
发明人： Hsin-Fei Meng , Hsiao-Wen Zan , Sheng-Fu Horng , Yu-Chiang Chao , Yuan-Pai Lin
IPC分类号： H01L51/46 , H01L31/18
CPC分类号： H01L51/4213 , H01L51/0036 , H01L51/0039 , H01L51/0043 , Y02E10/549
摘要： A solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss.
摘要翻译：提供了一种太阳能电池，其特征在于，在n型半导体层和p型半导体层之间形成非常薄的光吸收体，使得吸收体用于吸收太阳能，而p型半导体层可能不吸收光。在分离电子和空穴之后，载流子在传导期间不会复合，以避免能量损失。

5. 发明申请

US20110108936A1 PRESSURE DETECTOR AND PRESSURE DETECTOR ARRAY 有权
标题翻译：压力检测器和压力检测器阵列
公开(公告)号：US20110108936A1
公开(公告)日：2011-05-12
申请号：US12785998
申请日：2010-05-24
申请人： Hsin- Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao , Chun-Yu Chen , Wei-Jen Lai
发明人： Hsin- Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao , Chun-Yu Chen , Wei-Jen Lai
IPC分类号： H01L29/84
CPC分类号： G01L1/005 , H01L51/057
摘要： A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.
摘要翻译：公开了一种具有有机晶体管，压力检测层和第一电极的压力检测器。有机晶体管包括发射极，有机层，形成有孔的栅极和集电极，有机层夹在发射极和集电极之间。压力检测层形成在有机晶体管上，使得集电体夹在有机层和压力检测层之间。第一电极形成在压力检测层上，使得压力检测层夹在集电体和第一电极之间。压力检测器的有源区域的面积由电极的重叠面积确定，从而减小电极的间距，从而减小压力检测器的尺寸。

6. 发明授权

US07772079B2 Vertical organic transistor 有权
公开(公告)号：US07772079B2
公开(公告)日：2010-08-10
申请号：US12389580
申请日：2009-02-20
申请人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
发明人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
IPC分类号： H01L21/331
CPC分类号： H01L51/0504 , H01L51/0036 , H01L51/0037 , H01L51/057
摘要： A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.

7. 发明授权

US07791068B2 Vertical organic light emitting transistor assembly and horizontal organic light emitting transistor assembly 有权
标题翻译：垂直有机发光晶体管组件和水平有机发光晶体管组件
公开(公告)号：US07791068B2
公开(公告)日：2010-09-07
申请号：US12153249
申请日：2008-05-15
申请人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
发明人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
IPC分类号： H01L29/10
CPC分类号： H01L51/5203 , H01L27/3288 , H01L51/057
摘要： A vertical organic light emitting transistor assembly and a horizontal organic light emitting transistor assembly are provided. The vertical organic light emitting transistor assembly comprises a first/second vertical transistor and a first/second organic light emitting diode perpendicularly integrated with the first/second vertical transistor, respectively. The horizontal organic light emitting transistor assembly comprises a substrate, a third vertical transistor and a third organic light emitting diode. The third vertical transistor and the third organic light emitting diode are arranged abreast on the substrate. By integrating the organic light emitting diode and the vertical transistor into a unitary electronic element, the vertical transistor can efficiently drive the organic light emitting diode so that the organic light emitting transistor assembly can overcome limitations caused by existing manufacturing processes and adapt to extensive applications.
摘要翻译：提供垂直有机发光晶体管组件和水平有机发光晶体管组件。垂直有机发光晶体管组件包括分别与第一/第二垂直晶体管垂直集成的第一/第二垂直晶体管和第一/第二有机发光二极管。水平有机发光晶体管组件包括衬底，第三垂直晶体管和第三有机发光二极管。第三垂直晶体管和第三有机发光二极管并排配置在基板上。通过将有机发光二极管和垂直晶体管集成为一体的电子元件，垂直晶体管可以有效地驱动有机发光二极管，使得有机发光晶体管组件能够克服由现有制造工艺引起的限制并适应广泛的应用。

8. 发明申请

US20130005077A1 APPARATUS AND METHOD OF MANUFACTURING ORGANIC ELECTRONIC COMPONENT 审中-公开
标题翻译：装置和制造有机电子元件的方法
公开(公告)号：US20130005077A1
公开(公告)日：2013-01-03
申请号：US13281665
申请日：2011-10-26
申请人： Hsin-Fei Meng , Hsiao-Wen Zan , Sheng-Fu Horng , Hsiu-Yuan Yang , Kuo-Jui Huang , Hao-Wen Chang , Chun-Yu Chen , Yu-Chiang Chao , Yu-Fan Chang , Bo-Jie Chang
发明人： Hsin-Fei Meng , Hsiao-Wen Zan , Sheng-Fu Horng , Hsiu-Yuan Yang , Kuo-Jui Huang , Hao-Wen Chang , Chun-Yu Chen , Yu-Chiang Chao , Yu-Fan Chang , Bo-Jie Chang
IPC分类号： H01L51/40 , H05K13/00 , B05C9/14
CPC分类号： H01L51/0002 , B05D3/0254 , H01L51/0008 , H01L51/0026 , H01L51/0085 , H01L51/56 , Y02E10/549 , Y02P70/521 , Y10T29/49002
摘要： A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof.
摘要翻译：提供了化学机械抛光方法。化学机械抛光方法包括提供待研磨的多个半导体元件，获得待研磨的每个半导体元件的相应尺寸，并根据其各自的尺寸对每个半导体元件进行抛光的步骤。

9. 发明授权

US07692269B2 Vertical organic transistor 有权
标题翻译：垂直有机晶体管
公开(公告)号：US07692269B2
公开(公告)日：2010-04-06
申请号：US11675140
申请日：2007-02-15
申请人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
发明人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
IPC分类号： H01L27/082
CPC分类号： H01L51/0504 , H01L51/0036 , H01L51/0037 , H01L51/057
摘要： A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.
摘要翻译：提供一种垂直有机晶体管及其制造方法，其中发射极，具有开口的栅极和集电极依次布置在基板的上方。两个有机半导体层分别介于发射极和栅极之间，并具有开口，栅格与开口和集电极之间。通道长度简单地由有机半导体层的厚度决定。集电极电流取决于发射极和电网开口之间的电位差所贡献的空间电荷限制电流。并且电网电压因此可以有效地控制集电极电流。此外，本发明的垂直有机晶体管的制造工艺简单并且不会使用光刻工艺。

10. 发明申请

US20090256140A1 Light-detecting device structure 审中-公开
标题翻译：光检测装置结构
公开(公告)号：US20090256140A1
公开(公告)日：2009-10-15
申请号：US12153578
申请日：2008-05-21
申请人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
发明人： Hsin-Fei Meng , Sheng-Fu Horng , Yu-Chiang Chao
IPC分类号： H01L51/00
CPC分类号： H01L27/307 , G01N21/6428 , G01N21/6452 , H01L51/5203
摘要： A light-detecting device structure comprises a substrate, a vertical organic light-emitting transistor and a light-detecting unit, wherein the vertical organic light-emitting transistor is disposed at a first location on the substrate, and the light-detecting unit is disposed at a second location on the substrate, in which the first and the second locations can be spaced out an appropriate distance as needed. The vertical organic light-emitting transistor emits a light to an object, and the light-detecting unit receives a reflected light from the object. The reflected light received is analyzed to determine a distance between the light-detecting device structure and the object, as well as a shape or a composition of the object.
摘要翻译：光检测装置结构包括基板，垂直有机发光晶体管和光检测单元，其中垂直有机发光晶体管设置在基板上的第一位置，并且光检测单元被布置在基板上的第二位置处，其中第一和第二位置可以根据需要间隔适当的距离。垂直有机发光晶体管对物体发光，光检测单元从物体接收反射光。分析所接收的反射光以确定光检测装置结构和物体之间的距离，以及物体的形状或组成。

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