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    • 6. 发明申请
    • Organic field effect transistor and method of manufacturing the same
    • 有机场效应晶体管及其制造方法
    • US20100025667A1
    • 2010-02-04
    • US12462101
    • 2009-07-29
    • Chien-Cheng LiuHsin-Fei MengSheng-Fu Horng
    • Chien-Cheng LiuHsin-Fei MengSheng-Fu Horng
    • H01L51/10H01L51/40
    • H01L51/0533H01L51/0545
    • The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.
    • 本发明公开了一种有机场效应晶体管及其制造方法。 有机场效应晶体管包括顶接触型或底接触型,其制造方法包括以下步骤:提供基板,在基板上形成金属栅极,在其上形成无机绝缘层 基板和金属栅极,绝缘层的表面被抛光,绝缘层上的孔中填充有机填料作为绝缘处理,在无机绝缘层上形成改性层,最后形成有机半导体层, 源极和漏极形成。 通过结合有机材料的简单液化过程和无机材料的高稳定性的优点以及控制过程的操作条件,本发明可以有效地实现器件的高载流子迁移率和高开/关比。