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1. 发明申请

US20100230676A1 TFT ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US20100230676A1
公开(公告)日：2010-09-16
申请号：US12581438
申请日：2009-10-19
申请人： Hsien Tang HU , Chien Chih Hsiao , Chih Hung Tsai
发明人： Hsien Tang HU , Chien Chih Hsiao , Chih Hung Tsai
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride, the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed on the channel component, and data line is disposed on the gate insulating layer.
摘要翻译： TFT阵列基板包括基板，至少一个栅极线和栅极电极，栅极绝缘层以及至少一个沟道部件，源电极，漏电极和数据线。栅极线和栅电极设置在基板上，其中栅极线和栅电极都具有第一和第二导电层，第一导电层形成在基板上，第一导电层含有氮化钼，第二导电层形成在第一导电层上，第二导电层含有铜。栅极绝缘层设置在栅极线，栅电极和基板上。沟道部件设置在栅极绝缘层上。源电极和漏极设置在沟道部件上，并且数据线设置在栅极绝缘层上。

2. 发明申请

US20120264260A1 TFT ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US20120264260A1
公开(公告)日：2012-10-18
申请号：US13527983
申请日：2012-06-20
申请人： Hsien Tang HU , Chien Chih HSIAO , Chih Hung TSAI
发明人： Hsien Tang HU , Chien Chih HSIAO , Chih Hung TSAI
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride , the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed on the channel component, and data line is disposed on the gate insulating layer.
摘要翻译： TFT阵列基板包括基板，至少一个栅极线和栅极电极，栅极绝缘层以及至少一个沟道部件，源电极，漏电极和数据线。栅极线和栅电极设置在基板上，其中栅极线和栅电极都具有第一和第二导电层，第一导电层形成在基板上，第一导电层含有氮化钼，第二导电层形成在第一导电层上，第二导电层含有铜。栅极绝缘层设置在栅极线，栅极电极和基板上。沟道部件设置在栅极绝缘层上。源电极和漏极设置在沟道部件上，并且数据线设置在栅极绝缘层上。

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