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1. 发明授权

US09104526B2 Transaction splitting apparatus and method 有权
标题翻译：交易分割设备和方法
公开(公告)号：US09104526B2
公开(公告)日：2015-08-11
申请号：US13067071
申请日：2011-05-05
申请人： Young-Sun Jeon , Ho Jin Lee , Joon Hyuk Cha , Shi Hwa Lee , Young Su Moon , Hyun Sang Park
发明人： Young-Sun Jeon , Ho Jin Lee , Joon Hyuk Cha , Shi Hwa Lee , Young Su Moon , Hyun Sang Park
IPC分类号： G06F12/00 , G06F12/06 , G06F13/00 , G06F15/00 , G11C7/10
CPC分类号： G06F13/00 , G06F13/1647 , G06F15/00 , G11C7/1042
摘要： A transaction splitting apparatus and method are provided in which neighboring sub-transactions accessing a predetermined bank in each memory may access different banks. The transaction splitting apparatus includes a first processing unit to split a transaction into at least one sub-transaction, the transaction accessing a first bank among a plurality of banks comprised in a memory, and a second processing unit to translate an address of the at least one sub-transaction, to interleave the at least one sub-transaction using the plurality of banks.
摘要翻译：提供了一种事务分割装置和方法，其中访问每个存储器中的预定存储体的相邻子事务可以访问不同的存储体。交易分割装置包括：第一处理单元，用于将交易分为至少一个子交易，所述事务访问包含在存储器中的多个存储体中的第一存储体，以及第二处理单元，用于将至少一个地址一个子事务，用于使用所述多个存储体来交织所述至少一个子事务。

2. 发明授权

US08933561B2 Semiconductor device for semiconductor package having through silicon vias of different heights 有权
标题翻译：具有通过不同高度的硅通孔的半导体封装的半导体器件
公开(公告)号：US08933561B2
公开(公告)日：2015-01-13
申请号：US13211574
申请日：2011-08-17
申请人： SeYoung Jeong , Hogeon Song , Chungsun Lee , Ho-Jin Lee
发明人： SeYoung Jeong , Hogeon Song , Chungsun Lee , Ho-Jin Lee
IPC分类号： H01L23/48 , H01L21/768 , H01L23/00 , H01L25/065 , H01L25/18 , H01L25/00 , H01L21/56 , H01L23/31
CPC分类号： H01L23/481 , H01L21/563 , H01L21/76898 , H01L23/3128 , H01L24/04 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/97 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2221/68372 , H01L2224/0401 , H01L2224/04042 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/13009 , H01L2224/13025 , H01L2224/1403 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32145 , H01L2224/48227 , H01L2224/73257 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06544 , H01L2225/06562 , H01L2225/06568 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/1304 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19104 , H01L2924/00 , H01L2224/05552 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.
摘要翻译：提供一种半导体器件。半导体器件可以包括第一半导体芯片，其包括具有第一突起高度的第一至第二硅通孔以及具有大于第一突出高度的第二突出高度的第二穿透硅通孔，该第二突出高度穿过第一半导体芯片的至少一部分，第二半导体芯片可以电连接到第一通孔硅通孔，并且第三半导体芯片可以电连接到第二通孔硅通孔。

3. 发明授权

US08665771B2 Satellite mobile communication systems considering evolution of satellite mobile communication services market and method for communication using the system 有权
标题翻译：考虑卫星移动通信服务市场演进的卫星移动通信系统和使用该系统的通信方法
公开(公告)号：US08665771B2
公开(公告)日：2014-03-04
申请号：US13090237
申请日：2011-04-19
申请人： Seung Hyun Nam , Hee Wook Kim , Kun Seok Kang , Do Seob Ahn , Ho Jin Lee
发明人： Seung Hyun Nam , Hee Wook Kim , Kun Seok Kang , Do Seob Ahn , Ho Jin Lee
IPC分类号： H04W72/04 , H04H20/71
CPC分类号： H04B7/18539
摘要： Disclosed is a communication method of a satellite mobile communication system. The communication method of a satellite mobile communication system, includes: receiving system information indicating frame intervals in which first user equipments using a satellite radio interface in commonality with a terrestrial radio interface do not perform communications from a base station; accessing the base station in the rest frame intervals other than frame intervals in which the first user equipments do not perform communications, based on the system information; transmitting the system information from the base station to second user equipments using a satellite radio interface optimized for satellite environment; and accessing the base station in the rest frame intervals based on the system information received in the second user equipments.
摘要翻译：公开了一种卫星移动通信系统的通信方法。卫星移动通信系统的通信方法包括：接收指示帧间隔的系统信息，其中使用与地面无线接口通用的卫星无线接口的第一用户设备不执行来自基站的通信; 基于所述系统信息，在所述第一用户设备不执行通信的帧间隔之外的其余帧间隔中访问所述基站; 使用为卫星环境优化的卫星无线接口将系统信息从基站发送到第二用户设备; 以及基于在第二用户设备中接收到的系统信息在休息帧间隔中访问基站。

4. 发明授权

US08592991B2 Semiconductor device, fabricating method thereof and semiconductor package including the semiconductor device 有权
标题翻译：半导体装置及其制造方法以及包含该半导体装置的半导体封装
公开(公告)号：US08592991B2
公开(公告)日：2013-11-26
申请号：US13235369
申请日：2011-09-17
申请人： Ho-Jin Lee , Tae-Je Cho , Dong-Hyeon Jang , Ho-Geon Song , Se-Young Jeong , Un-Byoung Kang , Min-Seung Yoon
发明人： Ho-Jin Lee , Tae-Je Cho , Dong-Hyeon Jang , Ho-Geon Song , Se-Young Jeong , Un-Byoung Kang , Min-Seung Yoon
IPC分类号： H01L23/48 , H01L23/52 , H01L29/00
CPC分类号： H01L23/49844 , H01L21/76831 , H01L21/76844 , H01L21/76898 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/525 , H01L25/0657 , H01L2224/02372 , H01L2224/05009 , H01L2224/13025 , H01L2224/16 , H01L2224/16145 , H01L2224/16227 , H01L2224/17181 , H01L2225/06513 , H01L2225/06544 , H01L2924/15311
摘要： In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.
摘要翻译：在一个实施例中，半导体器件包括具有第一表面的半导体衬底和与第一表面相对的第二表面。第二表面限定再分布沟槽。基板具有贯穿其中的通孔。半导体器件还包括设置在通孔中的贯通孔。通孔可以包括依次形成在通孔的内壁上的通孔绝缘层，阻挡层。通孔还可以包括邻近阻挡层的导电连接器。半导体器件还包括形成在衬底的第二表面上的绝缘层图案。绝缘层图案限定了暴露通孔的顶表面的区域的开口。半导体器件包括设置在沟槽中并与通孔电连接的再分配层。绝缘层图案与导电连接器的区域重叠。

5. 发明授权

US08586477B2 Semiconductor apparatus, method of manufacturing the same, and method of manufacturing semiconductor package 有权
标题翻译：半导体装置及其制造方法以及半导体封装的制造方法
公开(公告)号：US08586477B2
公开(公告)日：2013-11-19
申请号：US13195128
申请日：2011-08-01
申请人： Se-young Jeong , Ho-jin Lee , Ho-geon Song , Jae-hyun Phee
发明人： Se-young Jeong , Ho-jin Lee , Ho-geon Song , Jae-hyun Phee
IPC分类号： H01L21/44 , H01L21/00 , H01L23/04
CPC分类号： H01L21/76898 , H01L21/563 , H01L23/481 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/03464 , H01L2224/03618 , H01L2224/0401 , H01L2224/05017 , H01L2224/05557 , H01L2224/0557 , H01L2224/05609 , H01L2224/05613 , H01L2224/05614 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05649 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/05673 , H01L2224/05676 , H01L2224/0568 , H01L2224/05681 , H01L2224/05683 , H01L2224/05684 , H01L2224/13109 , H01L2224/13111 , H01L2224/13116 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/13171 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/1703 , H01L2224/17181 , H01L2224/73204 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06544 , H01L2225/06565 , H01L2924/00014 , H01L2924/15311 , H01L2224/05552
摘要： A semiconductor apparatus having a through electrode, a semiconductor package, and a method of manufacturing the semiconductor package are provided. The method of includes preparing a substrate including a buried via, the buried via having a first surface at a first end, and the buried via extending from a first substrate surface of the substrate into the substrate; planarizing a second substrate surface of the substrate opposite the first substrate surface to form a through via by exposing a second via surface at a second end of the buried via opposite the first end; forming a conductive capping layer on the exposed second via surface of the through via; and recessing the second substrate surface so that at least a first portion of the through via extends beyond the second substrate surface.
摘要翻译：提供了具有贯通电极，半导体封装以及半导体封装的制造方法的半导体装置。该方法包括制备包括掩埋通孔的衬底，所述埋入通孔在第一端具有第一表面，以及所述掩埋通孔从所述衬底的第一衬底表面延伸到所述衬底中; 平行化与第一衬底表面相对的衬底的第二衬底表面以通过在与第一端相对的埋置通孔的第二端处暴露第二通孔表面而形成通孔; 在通孔的暴露的第二通孔表面上形成导电覆盖层; 并且使所述第二衬底表面凹陷，使得所述通孔的至少第一部分延伸超出所述第二衬底表面。

6. 发明授权

US08564102B2 Semiconductor device having through silicon via (TSV) 有权
标题翻译：具有硅通孔（TSV）的半导体器件
公开(公告)号：US08564102B2
公开(公告)日：2013-10-22
申请号：US13108231
申请日：2011-05-16
申请人： Ju-il Choi , Jae-hyun Phee , Kyu-ha Lee , Ho-jin Lee , Son-kwan Hwang
发明人： Ju-il Choi , Jae-hyun Phee , Kyu-ha Lee , Ho-jin Lee , Son-kwan Hwang
IPC分类号： H01L29/40 , H01L23/48 , H01L23/52
CPC分类号： H01L21/76879 , H01L21/76844 , H01L21/76873 , H01L21/76898 , H01L24/05 , H01L24/06 , H01L2224/05009 , H01L2224/06181
摘要： A semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes an interlayer insulation layer pattern, a metal wire pattern exposed by a passage formed by a via hole formed in the interlayer insulation layer pattern to input and output an electrical signal, and a plated layer pattern directly contacting the metal wire pattern and filling the via hole. The method includes forming an interlayer insulation layer having a metal wire pattern to input and output an electrical signal formed therein, forming a via hole to define a passage that extends through the interlayer insulation layer until at least a part of the metal wire pattern is exposed, and forming a plated layer pattern to fill the via hole and to directly contact the metal wire pattern by using the metal wire pattern exposed through the via hole as a seed metal layer.
摘要翻译：半导体器件和半导体器件的制造方法。半导体器件包括层间绝缘层图案，由形成在层间绝缘层图案中的通孔形成的通道暴露的金属线图案，以输入和输出电信号，以及直接接触金属线图案的镀层图案和填充通孔。该方法包括形成具有金属线图案的层间绝缘层，以输入和输出其中形成的电信号，形成通孔以限定延伸穿过层间绝缘层的通道，直到金属线图案的至少一部分露出并且形成镀层图案以填充通孔并且通过使用通过通孔露出的金属线图案作为种子金属层直接接触金属线图案。

7. 发明授权

US08492902B2 Multi-layer TSV insulation and methods of fabricating the same 有权
标题翻译：多层TSV绝缘及其制造方法
公开(公告)号：US08492902B2
公开(公告)日：2013-07-23
申请号：US13049661
申请日：2011-03-16
申请人： Ho-Jin Lee , SeYoung Jeong , Jae-hyun Phee , Jung-Hwan Kim , Tae Hong Min
发明人： Ho-Jin Lee , SeYoung Jeong , Jae-hyun Phee , Jung-Hwan Kim , Tae Hong Min
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/76898 , H01L21/76831 , H01L23/481 , H01L25/105 , H01L2224/0557 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/48091 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/1023 , H01L2225/1058 , H01L2924/12044 , H01L2924/15311 , H01L2924/00014
摘要： Provided is a semiconductor device. The semiconductor device may include a substrate and a stacked insulation layer on a sidewall of an opening which penetrates the substrate. The stacked insulation layer can include at least one first insulation layer and at least one second insulation layer whose dielectric constant is different than that of the first insulation layer. One insulation layer may be a polymer and one insulation layer may be a silicon based insulation layer. The insulation layers may be uniform in thickness or may vary as a distance from the substrate changes.
摘要翻译：提供一种半导体器件。半导体器件可以包括衬底和在穿透衬底的开口的侧壁上的层叠绝缘层。层叠绝缘层可以包括至少一个第一绝缘层和至少一个第二绝缘层，其介电常数不同于第一绝缘层的介电常数。一个绝缘层可以是聚合物，一个绝缘层可以是硅基绝缘层。绝缘层的厚度可以是均匀的，或者可以随着离开衬底的距离而改变。

8. 发明授权

US08433293B2 Apparatus and method for providing contents push service, and mobile terminal and operation method thereof 有权
标题翻译：提供内容推送服务的装置和方法及其移动终端及其操作方法
公开(公告)号：US08433293B2
公开(公告)日：2013-04-30
申请号：US12447886
申请日：2007-11-08
申请人： Ho-Jin Lee
发明人： Ho-Jin Lee
IPC分类号： H04L12/58
CPC分类号： H04L67/26 , H04L67/04 , H04L69/16 , H04L69/162 , H04L69/164
摘要： The present invention relates to an apparatus and method of providing a content push service, a mobile terminal, and a method of operating a mobile terminal. According to an exemplary embodiment of the present invention, a user datagram protocol (UDP) port is set between the mobile terminal and a content push service providing server. In addition, the mobile terminal drives an application that receives the content push service through the set user datagram protocol (UDP) port, by the request of the content push service providing server. The mobile terminal receives the content push service from the content push service providing server through the driven application. Accordingly, it is not necessary to select a specific identifier for each of existing applications and recognize a specific identifier for each node of the mobile communication network.
摘要翻译：本发明涉及提供内容推送服务，移动终端和操作移动终端的方法的装置和方法。根据本发明的示例性实施例，在移动终端和内容推送服务提供服务器之间设置用户数据报协议（UDP）端口。此外，通过内容推送服务提供服务器的请求，移动终端通过设置的用户数据报协议（UDP）端口来驱动接收内容推送服务的应用。移动终端通过驱动应用从内容推送服务提供服务器接收内容推送服务。因此，不需要为每个现有应用选择特定的标识符并且识别移动通信网络的每个节点的特定标识符。

9. 发明授权

US08411614B2 Apparatus for mobile satellite communications and method of controlling communications route 有权
标题翻译：移动卫星通信装置及通信路由控制方法
公开(公告)号：US08411614B2
公开(公告)日：2013-04-02
申请号：US12628485
申请日：2009-12-01
申请人： Min Su Shin , Jang Hee Kang , Dae Ig Chang , Ho Jin Lee
发明人： Min Su Shin , Jang Hee Kang , Dae Ig Chang , Ho Jin Lee
IPC分类号： H04B7/185 , H04Q7/00
CPC分类号： H04B7/18582 , H04B7/0817 , H04B7/18534 , H04L1/0061
摘要： A mobile satellite transmission/reception apparatus and a communications route control method using the same are disclosed. The mobile satellite transmission/reception apparatus comprises: a first antenna unit configured to receive a signal along a first communications route; a second antenna unit configured to receive a signal along a second communications route; and a data processor configured to compare cyclic redundancy check (CRC) values with respect to packet streams of signals respectively received by the first and second antenna units, and change communications route to one of the first and second communications routes if packets having the same CRC value are detected.
摘要翻译：公开了一种移动卫星发送/接收装置和使用该移动卫星收发装置的通信路径控制方法。移动卫星发送/接收装置包括：第一天线单元，被配置为沿着第一通信路由接收信号; 第二天线单元，被配置为沿第二通信路线接收信号; 以及数据处理器，被配置为将循环冗余校验（CRC）值相对于由第一和第二天线单元分别接收的信号的分组流进行比较，并且如果具有相同CRC的分组，则将通信路由改变为第一和第二通信路由之一检测到值。

10. 发明授权

US08410991B2 Antenna system for mobile vehicles 有权
标题翻译：天线系统用于移动车辆
公开(公告)号：US08410991B2
公开(公告)日：2013-04-02
申请号：US12746451
申请日：2008-08-21
申请人： Chang Soo Kwak , In Bok Yom , Ho Jin Lee
发明人： Chang Soo Kwak , In Bok Yom , Ho Jin Lee
IPC分类号： H01Q1/42
CPC分类号： H01Q1/27 , H01Q1/002 , H01Q3/08
摘要： The present invention relates to an antenna system mounted on a mobile vehicle. In the present invention, a power distributor and a part of a high-frequency module that includes a frequency converter are placed in an external fixed unit that is placed outside a radome. In addition, an active cooler/cooling fin, a heater, and an air circulation fan are placed at an internal bottom plane of the antenna system, and a cooling fin and cooling fan are placed at an external bottom plane of the antenna system.
摘要翻译：本发明涉及安装在移动车辆上的天线系统。在本发明中，包括变频器的功率分配器和高频模块的一部分被放置在放置在天线罩外部的外部固定单元中。此外，主动冷却器/冷却片，加热器和空气循环风扇被放置在天线系统的内部底平面处，并且冷却翅片和冷却风扇被放置在天线系统的外部底平面处。

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