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1. 发明授权

US5072844A Reservoir cap 失效
标题翻译：储备卡
公开(公告)号：US5072844A
公开(公告)日：1991-12-17
申请号：US658657
申请日：1991-02-21
申请人： Toshihiro Nakano , Hitoshi Tauchi
发明人： Toshihiro Nakano , Hitoshi Tauchi
IPC分类号： B60T11/26 , B60K15/04
CPC分类号： B60K15/0406
摘要： A reservoir cap includes a cylinder portion of molded resin and surrounding an outer circumferential surface of an opening portion of a reservoir body, and a flat portion unitarily formed on the cylinder portion and closing the opening portion of the reservoir body. A transparent film is insert-molded to the outer surface of the flat portion. Descriptive characters are formed at an inner surface of the film. The film is made from the same material as the flat portion. It is therefore possible to obtain a high adhesion between the film and the flat portion of the reservoir cap because they have the same melting point. Therefore, it is possible to provide an improved reservoir cap having descriptive characters which are easily seen from the outside thereof at the flat portion, while ensuring a high chemical resistance and a high durability against the operational fluid. Furthermore, it is possible to improve the appearance of the reservoir cap while ensuring the high chemical resistance and the high durability against the operational fluid.
摘要翻译：储存器盖包括模制树脂的圆筒部分并且围绕储存器主体的开口部分的外周表面，以及平坦部分，整体地形成在圆筒部分上并且关闭储存器主体的开口部分。透明膜被嵌入成型到平坦部分的外表面。描述性字符形成在膜的内表面。该膜由与平坦部分相同的材料制成。因此，由于它们具有相同的熔点，因此可以获得膜和储存器盖的平坦部分之间的高粘附性。因此，可以提供一种改进的储存器盖，其具有在平坦部分从外部容易看到的描述性特征，同时确保对操作流体的高耐化学性和高耐久性。此外，可以在确保高耐化学性和对工作流体的高耐久性的同时改善储存器盖的外观。

2. 发明授权

US4849048A Method of sealing electric and electronic parts 失效
标题翻译：密封电气和电子部件的方法
公开(公告)号：US4849048A
公开(公告)日：1989-07-18
申请号：US60167
申请日：1987-06-10
申请人： Akio Inagaki , Kiyotaka Nakai , Hitoshi Tauchi
发明人： Akio Inagaki , Kiyotaka Nakai , Hitoshi Tauchi
IPC分类号： H01B17/60 , B29C35/08 , B29C39/10 , B29C39/12 , B29C70/74 , B29K63/00 , B29K75/00 , B29L31/34 , H01C1/024 , H01G13/00 , H01H9/04 , H01H11/00 , H01H36/00 , H01L23/02 , H05K3/28 , H05K5/06
CPC分类号： B29C39/10 , B29C35/08 , B29C39/123 , B29C70/74 , H01H9/04 , B29C2035/0827 , B29K2063/00 , B29K2075/00 , B29L2031/3406 , H01H2011/0081 , H01H36/0033 , Y10S277/944 , Y10T29/49146 , Y10T29/49171 , Y10T29/49172
摘要： A method of sealing electric and electonic parts, comprising employing two different ultraviolet-curing resins for upper and lower layer portions, respectively, the resin employed for the upper layer portion having a smaller specific gravity than that of the resin for the lower layer portion before the resins are cured, and simultaneously curing the resins by irradiation with an ultraviolet ray. The ultraviolet-curing resin employed for the upper layer portion is an epoxy acrylate or epoxy resin, while an urethane acrylate ultraviolet-curing resin is employed for the lower layer portion, and the thickness of the ultraviolet-curing resin employed for the upper layer portion is set at from 0.5 mm to 3 mm.
摘要翻译：一种密封电气和电气部件的方法，包括分别对上层部分和下层部分使用两种不同的紫外线固化树脂，上层部分中使用的树脂比下层部分的树脂的比重小树脂固化，同时用紫外线照射同时固化树脂。用于上层部分的紫外线固化树脂是环氧丙烯酸酯或环氧树脂，而下层部分使用聚氨酯丙烯酸酯紫外线固化树脂，用于上层部分的紫外线固化树脂的厚度设定为0.5mm至3mm。

3. 发明授权

US5966939A Multistage thermoelectric cooling device 失效
标题翻译：多级热电冷却装置
公开(公告)号：US5966939A
公开(公告)日：1999-10-19
申请号：US33517
申请日：1998-03-02
申请人： Hitoshi Tauchi
发明人： Hitoshi Tauchi
IPC分类号： F25B21/02 , H01L35/32
CPC分类号： H01L35/325 , F25B21/02
摘要： A multiple thermoelectric cooling device in which both ends of thermoelectric elements in first and second cooling units are soldered to the corresponding electrodes. In the first cooling unit, the melting point of a solder for soldering is higher, while in the second cooling unit the melting point of another solder for soldering is lower. Thus, in case soldering is performed in the second cooling unit with the same placed on the first cooling unit, the soldered connection in the first cooling unit will not be remelted.
摘要翻译：一种多热电冷却装置，其中第一和第二冷却单元中的热电元件的两端焊接到相应的电极。在第一冷却单元中，用于焊接的焊料的熔点较高，而在第二冷却单元中，用于焊接的另一焊料的熔点较低。因此，如果在第二冷却单元中执行与第一冷却单元相同的焊接，则第一冷却单元中的焊接连接将不被再熔化。

4. 发明授权

US5936192A Multi-stage electronic cooling device 失效
标题翻译：多级电子冷却装置
公开(公告)号：US5936192A
公开(公告)日：1999-08-10
申请号：US992096
申请日：1997-12-17
申请人： Hitoshi Tauchi
发明人： Hitoshi Tauchi
IPC分类号： F25B21/02 , H01L35/32 , H01L35/28
CPC分类号： H01L35/325
摘要： A multi-stage electronic cooling device has an electrically insulating base plate, a first thermoelectric converter portion having the Peltier effect and disposed on one surface of the electrically insulating base plate, and a second thermoelectric converter portion having the Peltier effect and disposed on another surface of the electrically insulating base plate. A through hole is formed in the electrically insulating base plate. An electrically conductive member interconnects the first thermoelectric converter portion and the second thermoelectric converter portion via an interior of the through hole. In an optional construction, the electrically conductive member is formed of an electrically conductive coating formed on the inner peripheral surface of the through hole, and the first and second thermoelectric converter portions are disposed between the electrically insulating base plate and two additional insulating base plates at opposite sides thereof
摘要翻译：多级电子冷却装置具有电绝缘底板，具有珀尔帖效应的第一热电转换器部分并且设置在电绝缘基板的一个表面上，以及具有珀尔帖效应的第二热电转换器部分并且设置在另一表面上的电绝缘基板。在电绝缘基板中形成通孔。导电构件经由通孔的内部将第一热电转换器部分和第二热电转换器部分互连。在可选构造中，导电构件由形成在通孔的内周表面上的导电涂层形成，并且第一和第二热电转换器部分设置在电绝缘基板和两个另外的绝缘基板之间，的相对侧

5. 发明授权

US06524879B2 Method for producing a thermoelectric semiconductor 有权
标题翻译：热电半导体的制造方法
公开(公告)号：US06524879B2
公开(公告)日：2003-02-25
申请号：US09725570
申请日：2000-11-30
申请人： Hitoshi Tauchi , Satoru Hori , Hirotsugu Sugiura , Hiroyasu Kojima
发明人： Hitoshi Tauchi , Satoru Hori , Hirotsugu Sugiura , Hiroyasu Kojima
IPC分类号： H01L2100
CPC分类号： H01L35/34 , C30B1/12 , C30B29/52
摘要： A method for producing a thermoelectric semiconductor includes an ingot production step for producing an ingot of a thermoelectric semiconductor and an integrating step for integrating a plurality of the ingots by plastic deforming the ingots to produce an integrated ingot of the thermoelectric semiconductor. The large size of the thermoelectric semiconductor ingot having uniform performance and mechanical strength can be produced by integration of two or more ingots. Therefore, many wafers can be produce at one time in the slicing step, and productivity is improved. Further, two or more ingots are integrated by plastic deformation so that the connecting strength of the connecting interface is strong.
摘要翻译：一种热电半导体的制造方法包括：制造热电半导体的锭的锭生产工序，以及通过塑料变形将多个锭整合在一起的积分工序，制造热电半导体的一体化锭。具有均匀的性能和机械强度的大尺寸的热电半导体锭可以通过集成两个或更多个锭来生产。因此，可以在切片步骤中一次生产许多晶片，并提高生产率。此外，通过塑性变形将两个或更多个锭整合，使得连接界面的连接强度很强。

6. 发明授权

US4939404A Vibration wave motor 失效
标题翻译：振动马达
公开(公告)号：US4939404A
公开(公告)日：1990-07-03
申请号：US341820
申请日：1989-04-24
申请人： Akio Inagaki , Kiyotaka Nakai , Hitoshi Tauchi
发明人： Akio Inagaki , Kiyotaka Nakai , Hitoshi Tauchi
IPC分类号： H02N2/00 , F16C33/20 , H01L41/09 , H02N2/16
CPC分类号： H02N2/163 , F16C33/201 , H02N2/007
摘要： A vibration wave motor includes a stator with an upper surface at which is generated a travelling vibration, a rotor with a lower surface rotatably mounted on the upper surface of the stator, and an urging device for developing a frictional force between the upper surface of the stator and the lower surface of the rotor. A sheet member is attached to either the upper surface of the stator or the lower surface of the rotor and the sheet member includes a base member having ultra heat-resistant properties, a fluorine-contained resin and a filler in the form of fibers.
摘要翻译：振动电动机包括：具有产生行进振动的上表面的定子，具有可旋转地安装在定子的上表面上的下表面的转子和用于在定子的上表面之间形成摩擦力的施力装置定子和转子的下表面。片状构件附接到定子的上表面或转子的下表面，并且片构件包括具有超耐热性的基底构件，含氟树脂和纤维形式的填料。

7. 发明授权

US06774298B2 Thermoelectric module and method of producing the same 失效
标题翻译：热电模块及其制造方法
公开(公告)号：US06774298B2
公开(公告)日：2004-08-10
申请号：US10059392
申请日：2002-01-31
申请人： Hitoshi Tauchi , Masato Itakura , Hirotsugu Sugiura
发明人： Hitoshi Tauchi , Masato Itakura , Hirotsugu Sugiura
IPC分类号： H01L3534
CPC分类号： H01S5/02415 , H01L2924/0002 , H01S5/0222 , H01S5/02284 , H01S5/02469 , Y10S257/93 , H01L2924/00
摘要： A thermoelectric module which includes case 1, heat-radiation side insulating substrate 4a, heat-absorption side insulating substrate 4b, first soldering layer 5a formed of a first soldering agent to connect the heat-radiation side insulating substrate 4a and the case 1, a plurality of P-type and N-type semiconductor chips interposed between the heat-radiation side insulating substrate 4a and the heat-absorption side insulating substrate 4b, the plurality of P-type and N-type semiconductor chips being arranged alternately, and a second soldering layer 15a (15b) formed of a second soldering agent to connect the heat-radiation side insulating substrate 4a and one end of each of the plural P-type and N-type semiconductor chips (the heat-absorption side insulating substrate 4b and the other end of each of the plural P-type and N-type semiconductor chips), the first soldering agent and the second soldering agent being identical in raw material.
摘要翻译：包括壳体1，散热侧绝缘基板4a，吸热侧绝缘基板4b的热电模块，由热辐射侧绝缘基板4a和壳体1连接的第一焊剂构成的第一焊接层5a，插入在散热侧绝缘基板4a和吸热侧绝缘基板4b之间的多个P型和N型半导体芯片，多个P型和N型半导体芯片交替排列，第二由第二焊剂形成的焊接层15a（15b），其连接散热侧绝缘基板4a和多个P型和N型半导体芯片（吸热侧绝缘基板4b和多个P型和N型半导体芯片中的每一个的另一端），第一焊剂和第二焊剂的原料相同。

8. 发明授权

US06727423B2 Thermoelectric module and process for producing thermoelectric module 失效
标题翻译：热电模块和热电模块生产工艺
公开(公告)号：US06727423B2
公开(公告)日：2004-04-27
申请号：US09964371
申请日：2001-09-28
申请人： Hitoshi Tauchi , Masato Itakura , Hirotsugu Sugiura
发明人： Hitoshi Tauchi , Masato Itakura , Hirotsugu Sugiura
IPC分类号： H01L3534
CPC分类号： H01L35/30 , H01S5/02415 , Y10S257/93
摘要： A thermoelectric module includes a case, a insulating base plate for a exoergic side, a insulating base plate for endoergic side, a first soldering layer which joins the insulating base plate for the exoergic side to the case via a first soldering material, and a second soldering layer which joins P-type and N-type semiconductor tips to the insulating base plate for an exoenergic side and a insulating base plate for an endoergic side, using second soldering material. The melting point temperature of the first soldering material for the first soldering layer is higher than the melting point temperature of the second material for the second soldering layer.
摘要翻译：热电模块包括壳体，用于散热侧的绝缘基板，用于内热侧的绝缘基板，通过第一焊接材料将用于散热侧的绝缘基板连接到壳体的第一焊接层，以及第二焊接层焊接层，其通过使用第二焊接材料将P型和N型半导体尖端连接到用于外能源侧的绝缘基板和用于内热侧的绝缘基板。用于第一焊接层的第一焊料的熔点温度高于第二焊料层的第二材料的熔点温度。

9. 发明授权

US06452085B2 Thermoelectric device 有权
标题翻译：热电装置
公开(公告)号：US06452085B2
公开(公告)日：2002-09-17
申请号：US09760852
申请日：2001-01-17
申请人： Hitoshi Tauchi , Satoru Ogawa , Hirotsugu Sugiura , Noburo Ebina
发明人： Hitoshi Tauchi , Satoru Ogawa , Hirotsugu Sugiura , Noburo Ebina
IPC分类号： H01L3528
CPC分类号： H01L35/08
摘要： A thermoelectric device includes a thermoelectric element composed of principally thermoelectric material, a counter element adhered to the thermoelectric material. A solder layer lies between the thermoelectric element and the counter element and adheres the thermoelectric element to the counter element. A restraining layer prevents the solder ingredient of the solder layer from spreading into the thermoelectric element. The restraining layer is composed of a first layer to prevent the solder ingredient of the solder layer from spreading into the thermoelectric element and a second layer composed of material having a higher wetting property than the first layer with respect to the solder layer.
摘要翻译：热电装置包括主要由热电材料构成的热电元件，附着在热电材料上的相对元件。焊料层位于热电元件和对置元件之间，并将热电元件粘合到对置元件上。抑制层防止焊料层的焊料成分扩散到热电元件中。抑制层由防止焊料层的焊料成分扩散到热电元件的第一层和由相对于焊料层具有比第一层更高的润湿性的材料构成的第二层构成。

10. 发明授权

US06316279B1 Method of producing thermoelectric semiconductor 有权
标题翻译：制造热电半导体的方法
公开(公告)号：US06316279B1
公开(公告)日：2001-11-13
申请号：US09513465
申请日：2000-02-25
申请人： Hitoshi Tauchi , Atsushi Tomita , Kazuo Ebisumori
发明人： Hitoshi Tauchi , Atsushi Tomita , Kazuo Ebisumori
IPC分类号： H01L2100
CPC分类号： H01L35/34
摘要： In order to provide a high mechanical strength and a progressive performance index resulting from an improved electric conductivity, a thermoelectric semiconductor is made by arranging a plurality of extruded bar-shaped thermoelectric semiconductor materials B1 in a bundle. The resulting bar-shaped thermoelectric semiconductor materials B1 are sintered and integrated concurrently by applying a force to each bar-shaped thermoelectric material B1 along a direction L2 perpendicular to an axis L1 thereof. This causes flows of materials, thereby further orientating cleavage planes which causes an advanced orientation effect.
摘要翻译：为了提供由导电性提高而导致的高的机械强度和渐进的性能指标，通过将多个挤出的棒状热电半导体材料B1布置成束来制造热电半导体。所得到的棒状热电半导体材料B1通过沿垂直于其轴线L1的方向L2向每个棒状热电材料B1施加力而同时烧结并集成。这导致材料流动，从而进一步取向导致先进取向效应的解理面。

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