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1. 发明授权

US08410573B2 SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same 有权
标题翻译： SOI（绝缘体上硅）结构半导体器件及其制造方法
公开(公告)号：US08410573B2
公开(公告)日：2013-04-02
申请号：US12734240
申请日：2008-10-20
申请人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
发明人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
IPC分类号： H01L29/06
CPC分类号： H01L29/78609 , H01L21/26506 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76256 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/32 , H01L29/7849 , H01L29/78603
摘要： In a SOI structure semiconductor device using a SOI substrate, a lattice distortion layer is formed by implanting Ar ions into a silicon substrate as an active layer. The lattice distortion layer is capable of serving as a gettering site. The dose amount of Ar ions is adjusted in such a manner that tensile stress in the lattice distortion layer is equal to or greater than 11 MPa and equal to or less than 27 MPa. Thus, the lattice distortion layer can prevent occurrence of a leakage current while serving as the gettering site.
摘要翻译：在使用SOI衬底的SOI结构半导体器件中，通过将Ar离子注入作为有源层的硅衬底中形成晶格畸变层。晶格畸变层能够用作吸杂位点。调整Ar离子的剂量，使晶格变形层的拉伸应力为11MPa以上且27MPa以下。因此，晶格畸变层可以防止在作为吸杂位置时发生漏电流。

2. 发明申请

US20100264510A1 SOI (SILICON ON INSULATOR) STRUCTURE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： SOI（绝缘体硅）结构半导体器件及其制造方法
公开(公告)号：US20100264510A1
公开(公告)日：2010-10-21
申请号：US12734240
申请日：2008-10-20
申请人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
发明人： Hiroshi Ohtsuki , Mitsutaka Katada , Nobuhiko Noto , Hiroshi Takeno , Kazuhiko Yoshida
IPC分类号： H01L29/06 , H01L21/306
CPC分类号： H01L29/78609 , H01L21/26506 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76256 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/32 , H01L29/7849 , H01L29/78603
摘要： In a SOI structure semiconductor device using a SOI substrate, a lattice distortion layer is formed by implanting Ar ions into a silicon substrate as an active layer. The lattice distortion layer is capable of serving as a gettering site. The dose amount of Ar ions is adjusted in such a manner that tensile stress in the lattice distortion layer is equal to or greater than 11 MPa and equal to or less than 27 MPa. Thus, the lattice distortion layer can prevent occurrence of a leakage current while serving as the gettering site.
摘要翻译：在使用SOI衬底的SOI结构半导体器件中，通过将Ar离子注入作为有源层的硅衬底中形成晶格畸变层。晶格畸变层能够用作吸杂位点。调整Ar离子的剂量，使晶格变形层的拉伸应力为11MPa以上且27MPa以下。因此，晶格畸变层可以防止在作为吸杂位置时发生漏电流。

3. 发明授权

US08853089B2 Manufacturing method of semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08853089B2
公开(公告)日：2014-10-07
申请号：US13541885
申请日：2012-07-05
申请人： Hiroshi Ohtsuki , Takumi Shibata
发明人： Hiroshi Ohtsuki , Takumi Shibata
IPC分类号： H01L21/306 , H01L29/78 , H01L29/66 , H01L21/3065 , H01L29/06 , H01L29/10
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/0634 , H01L29/1095 , H01L29/66734 , H01L29/7813
摘要： A manufacturing method of a semiconductor substrate includes: forming a trench in a semiconductor board by a dry etching method; etching a surface portion of an inner wall of the trench by a chemical etching method so that a first damage layer is removed, wherein the surface portion has a thickness equal to or larger than 50 nanometers; and performing a heat treatment at temperature equal to or higher than 1050° C. in non-oxidizing and non-azotizing gas so that crystallinity of a second damage layer is recovered, wherein the second damage layer is disposed under the first damage layer. The crystallinity around the trench is sufficiently recovered.
摘要翻译：半导体衬底的制造方法包括：通过干蚀刻法在半导体板中形成沟槽; 通过化学蚀刻方法蚀刻沟槽的内壁的表面部分，从而去除第一损伤层，其中表面部分具有等于或大于50纳米的厚度; 并且在非氧化和非氮化气体中在等于或高于1050℃的温度下进行热处理，从而回收第二损伤层的结晶度，其中第二损伤层设置在第一损伤层下面。沟槽周围的结晶度充分回收。

4. 发明授权

US5483097A Device protecting layer 失效
标题翻译：设备保护层
公开(公告)号：US5483097A
公开(公告)日：1996-01-09
申请号：US181111
申请日：1994-01-13
申请人： Hiroshi Ohtsuki , Fumio Ohara , Shoji Toyoshima
发明人： Hiroshi Ohtsuki , Fumio Ohara , Shoji Toyoshima
IPC分类号： H01L21/31 , H01L21/318 , H01L21/8247 , H01L23/29 , H01L23/31 , H01L29/788 , H01L29/792 , H01L29/34
CPC分类号： H01L23/298 , H01L23/3171 , H01L2924/0002
摘要： A device protecting film having a UV transmissible SiN film, wherein the film is formed by a plasma CVD process in such a manner that a composition ratio Si/N falls within the range of 0.75 to 0.87, a Si--H bond concentration Z (cm.sup.-3) in the SiN film has a value near the value Z expressed by the following formula in accordance with a value X of Si/N:Z=1.58.times.10.sup.22 X-9.94.times.10.sup.21and, at the same time, a hydrogen bond concentration Y (cm.sup.-3) determining the Si--H bond concentration has a value near the value Y expressed by the following formula in accordance with X:Y=1.01.times.10.sup.22 X+0.54.times.10.sup.22The resulting SiN film transmits ultraviolet rays having a wavelength of 254 nm, reduces a stress inside the film, and has high moisture resistance.
摘要翻译：具有UV透射性SiN膜的器件保护膜，其中通过等离子体CVD法形成所述膜，使得Si / N的组成比落在0.75〜0.87的范围内，Si-H键的浓度Z（cm -3）根据Si / N：Z = 1.58×1022X-9.94×1021的值X具有接近由下式表示的值Z的值，并且同时氢键浓度Y（ cm-3）根据X：Y = 1.01×1022X + 0.54×1022，测定Si-H键浓度的值接近由下式表示的值Y.得到的SiN膜透射波长254nm的紫外线，降低膜内的应力，并具有很高的防潮性。

5. 发明授权

US4494298A Automatic assembling apparatus 失效
标题翻译：自动装配装置
公开(公告)号：US4494298A
公开(公告)日：1985-01-22
申请号：US380997
申请日：1982-05-21
申请人： Tamiaki Matsuura , Takeshi Aiba , Takashi Fukushima , Masanori Nishimura , Hiroshi Ohtsuki , Fujio Yabuki , Tomio Kusakabe
发明人： Tamiaki Matsuura , Takeshi Aiba , Takashi Fukushima , Masanori Nishimura , Hiroshi Ohtsuki , Fujio Yabuki , Tomio Kusakabe
IPC分类号： B23Q7/04 , B23P19/00 , B23P19/04 , B23P21/00 , B23Q7/14 , B23Q41/02 , B65G47/90 , B23B13/00
CPC分类号： B65G47/90 , B23P19/007 , B23P21/00 , B23Q7/1426 , B23Q7/1494 , Y10T29/5124 , Y10T29/5136
摘要： An automatic assembling apparatus includes a pair of parallel conveyers for transferring carriers, each carrier having four chassis and parts to be assembled on the chassis; a plurality of assembly stations, each having a movable table on which various assembling operations can be performed with respect to the carriers; a carrier loader associated with each assembly station and movable between a first position in opposing relation to the movable table thereof and a second position in opposing relation to the conveyers, and having a pair of chucking stations in opposing relation to the pair of parallel conveyors, respectively, when the carrier loader is at the second position for simultaneously feeding and discharging the carriers to and from the conveyers and in opposing relation to the respective assembly station when the carrier loader is at the first position for feeding and discharging the carriers to and from the respective assembly station; a plurality of stopping members associated with respective ones of the assembly stations for selectively stopping carriers adjacent respective ones of the assembly stations; and sensing elements for detecting the presence of the carriers on the pair of parallel conveyers for controlling the stopping members in response thereto so as to selectively stop carriers adjacent respective ones of the assembly stations.
摘要翻译：一种自动组装装置，包括一对平行的传送带，用于传送载体，每个载体具有四个底盘和待组装在底盘上的零件; 多个组装站，每个组装站具有可移动工作台，可在其上进行相对于承载件的各种组装操作; 与每个组装站相关联并且可在与其可动台相对的第一位置和与所述输送机相对的第二位置之间移动的承载装载机，并且具有与所述一对平行输送机相对的一对夹紧站，当载体装载机处于第二位置时，当载体装载机处于用于将载体进给和排出的第一位置时，将载体同时从输送机输送和排出，并且与相应的装配工位相对。各装配站; 与相应的组合站相关联的多个停止构件，用于选择性地停止邻近相应组合站的载体; 以及感测元件，用于检测一对平行输送机上的载体的存在，用于响应于此而控制停止构件，以便选择性地停止与各个组合站相邻的载体。

6. 发明授权

US4531284A Automatic assembling machine 失效
标题翻译：自动装配机
公开(公告)号：US4531284A
公开(公告)日：1985-07-30
申请号：US647870
申请日：1984-09-06
申请人： Tamiaki Matsuura , Takeshi Aiba , Takashi Fukushima , Masanori Nishimura , Hiroshi Ohtsuki , Fujio Yabuki , Tomio Kusakabe
发明人： Tamiaki Matsuura , Takeshi Aiba , Takashi Fukushima , Masanori Nishimura , Hiroshi Ohtsuki , Fujio Yabuki , Tomio Kusakabe
IPC分类号： A61K31/585 , B23P19/04 , B23P21/00 , C07J19/00 , B23P23/00 , B23Q15/00
CPC分类号： B23P19/04 , B23P21/00 , Y10T29/5136 , Y10T29/53004 , Y10T29/5337
摘要： An automatic assembling machine is disclosed for use with a carrier having parts arranged on it in predefined positional relationships which are defined by predetermined distances therebetween in two orthogonal directions. A movable table supports the carrier and moves in two orthogonal directions in a horizontal plan. A mounting surface extends above the plane of the movable table and has first and second portions which are parallel to the two orthogonal directions. At least one working unit is attached to at least one of the portions of the mounting surface to cooperate with movements of the table in assembling the parts on the carrier.
摘要翻译：公开了一种自动组装机，用于具有以预定位置关系布置在其上的部件的载体，所述预定位置关系由两个正交方向上的预定距离限定。可移动台支撑托架并在水平方向上沿两个正交方向移动。安装表面在可移动工作台的平面之上延伸，并且具有平行于两个正交方向的第一和第二部分。至少一个工作单元附接到安装表面的至少一个部分，以在组装载体上的部件时配合工作台的移动。

7. 发明申请

US20130012004A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20130012004A1
公开(公告)日：2013-01-10
申请号：US13541885
申请日：2012-07-05
申请人： Hiroshi OHTSUKI , Takumi Shibata
发明人： Hiroshi OHTSUKI , Takumi Shibata
IPC分类号： H01L21/306
CPC分类号： H01L21/3065 , H01L21/30604 , H01L29/0634 , H01L29/1095 , H01L29/66734 , H01L29/7813
摘要： A manufacturing method of a semiconductor substrate includes: forming a trench in a semiconductor board by a dry etching method; etching a surface portion of an inner wall of the trench by a chemical etching method so that a first damage layer is removed, wherein the surface portion has a thickness equal to or larger than 50 nanometers; and performing a heat treatment at temperature equal to or higher than 1050° C. in non-oxidizing and non-azotizing gas so that crystallinity of a second damage layer is recovered, wherein the second damage layer is disposed under the first damage layer. The crystallinity around the trench is sufficiently recovered
摘要翻译：半导体衬底的制造方法包括：通过干蚀刻法在半导体板中形成沟槽; 通过化学蚀刻方法蚀刻沟槽的内壁的表面部分，从而去除第一损伤层，其中表面部分具有等于或大于50纳米的厚度; 并且在非氧化和非氮化气体中在等于或高于1050℃的温度下进行热处理，从而回收第二损伤层的结晶度，其中第二损伤层设置在第一损伤层下面。沟槽周围的结晶度充分回收

8. 发明授权

US4476627A Automatic assembling machine 失效
标题翻译：自动装配机
公开(公告)号：US4476627A
公开(公告)日：1984-10-16
申请号：US391472
申请日：1982-06-23
申请人： Tamiaki Matsuura , Takeshi Aiba , Takashi Fukushima , Masanori Nishimura , Hiroshi Ohtsuki , Fujio Yabuki , Tomio Kusakabe
发明人： Tamiaki Matsuura , Takeshi Aiba , Takashi Fukushima , Masanori Nishimura , Hiroshi Ohtsuki , Fujio Yabuki , Tomio Kusakabe
IPC分类号： B23P19/04 , B23P21/00 , B23Q7/04 , B23P19/00
CPC分类号： B23P21/00 , B23P19/04 , B23Q7/046 , Y10T29/53013 , Y10T29/534
摘要： A machine for automatically assembling equipment composed of parts at least some of which are arranged on a carrier includes a movable table which supports the carrier and which moves in two orthogonal directions in a horizontal plane. A tray is supported on the table and has additional parts or tools arranged thereon for use during assembly. A mounting surface extends above the plane of the movable table and has first and second portions parallel to the two orthogonal directions. At least one working unit is attached to at least one of the portions of the mounting surface for selective engagement with the parts and the tools on the tray upon movements of the movable table in assembling the equipment.
摘要翻译：用于自动组装由至少其中一些布置在载体上的部件组成的设备的机器包括支撑载体并且在水平面中在两个正交方向上移动的可移动台。托盘支撑在桌子上，并具有安装在其上的附加部件或工具，以便在组装过程中使用。安装表面在可移动台的平面之上延伸，并且具有平行于两个正交方向的第一和第二部分。至少一个工作单元附接到安装表面的至少一个部分，用于在组装设备的可移动台的移动时与托盘上的部件和工具选择性地接合。

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