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1. 发明授权

US4680608A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4680608A
公开(公告)日：1987-07-14
申请号：US697571
申请日：1985-02-01
申请人： Yukio Tsuzuki , Masami Yamaoka , Shoji Toyoshima
发明人： Yukio Tsuzuki , Masami Yamaoka , Shoji Toyoshima
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/732 , H01L29/72
CPC分类号： H01L29/0813
摘要： This application describes a semiconductor device having a power amplifier pattern consisting of a plurality of parallel-connected transistor unit cells with emitters thereof being arrayed like meshes, wherein the width of the emitter of each transistor unit cell is not in excess of 50 microns. The limitation of the emitter width contributes to enhancement of the reverse-bias breakdown endurance.
摘要翻译：本申请描述了一种具有功率放大器模式的半导体器件，该功率放大器模式由多个并联的晶体管单元电池组成，其发射极像网格一样排列，其中每个晶体管单电池的发射极的宽度不超过50微米。发射极宽度的限制有助于提高反向偏压击穿耐力。

2. 发明授权

US5596217A Semiconductor device including overvoltage protection diode 失效
标题翻译：半导体器件包括过压保护二极管
公开(公告)号：US5596217A
公开(公告)日：1997-01-21
申请号：US407157
申请日：1989-09-14
申请人： Masami Yamaoka , Shoji Toyoshima
发明人： Masami Yamaoka , Shoji Toyoshima
IPC分类号： H01L27/02 , H01L29/739 , H01L29/866
CPC分类号： H01L29/866 , H01L27/0248 , H01L29/7391
摘要： A semiconductor device includes a diode element for protecting a transistor against an overvoltage. A first region of p-type conductivity is formed on an upper surface of an n-type semiconductor substrate in which base and emitter regions of the transistor are formed. A second region of n.sup.+ -type conductivity whose impurity concentration is higher than that of the n-type semiconductor substrate is formed on its upper surface to be spaced apart from the first region. An insulating film is formed to cover the upper surface of the semiconductor substrate. Furthermore, a conductive film is formed to partially overlap the first and second regions through the insulating film. The first region serves as an anode, the second region serves as a cathode, and the conductive film serves as a gate electrode; thus an overvoltage protection diode is obtained.
摘要翻译：半导体器件包括用于保护晶体管免受过电压的二极管元件。在形成晶体管的基极和发射极区域的n型半导体衬底的上表面上形成p型导电性的第一区域。在其上表面上形成杂质浓度高于n型半导体衬底的n +型导电性的第二区域，以与第一区域间隔开。形成绝缘膜以覆盖半导体衬底的上表面。此外，形成导电膜以通过绝缘膜部分地重叠第一和第二区域。第一区域用作阳极，第二区域用作阴极，并且导电膜用作栅电极; 从而得到过电压保护二极管。

3. 发明授权

US5483097A Device protecting layer 失效
标题翻译：设备保护层
公开(公告)号：US5483097A
公开(公告)日：1996-01-09
申请号：US181111
申请日：1994-01-13
申请人： Hiroshi Ohtsuki , Fumio Ohara , Shoji Toyoshima
发明人： Hiroshi Ohtsuki , Fumio Ohara , Shoji Toyoshima
IPC分类号： H01L21/31 , H01L21/318 , H01L21/8247 , H01L23/29 , H01L23/31 , H01L29/788 , H01L29/792 , H01L29/34
CPC分类号： H01L23/298 , H01L23/3171 , H01L2924/0002
摘要： A device protecting film having a UV transmissible SiN film, wherein the film is formed by a plasma CVD process in such a manner that a composition ratio Si/N falls within the range of 0.75 to 0.87, a Si--H bond concentration Z (cm.sup.-3) in the SiN film has a value near the value Z expressed by the following formula in accordance with a value X of Si/N:Z=1.58.times.10.sup.22 X-9.94.times.10.sup.21and, at the same time, a hydrogen bond concentration Y (cm.sup.-3) determining the Si--H bond concentration has a value near the value Y expressed by the following formula in accordance with X:Y=1.01.times.10.sup.22 X+0.54.times.10.sup.22The resulting SiN film transmits ultraviolet rays having a wavelength of 254 nm, reduces a stress inside the film, and has high moisture resistance.
摘要翻译：具有UV透射性SiN膜的器件保护膜，其中通过等离子体CVD法形成所述膜，使得Si / N的组成比落在0.75〜0.87的范围内，Si-H键的浓度Z（cm -3）根据Si / N：Z = 1.58×1022X-9.94×1021的值X具有接近由下式表示的值Z的值，并且同时氢键浓度Y（ cm-3）根据X：Y = 1.01×1022X + 0.54×1022，测定Si-H键浓度的值接近由下式表示的值Y.得到的SiN膜透射波长254nm的紫外线，降低膜内的应力，并具有很高的防潮性。

4. 发明授权

US4672402A Semiconductor circuit device including an overvoltage protection element 失效
标题翻译：包括过电压保护元件的半导体电路装置
公开(公告)号：US4672402A
公开(公告)日：1987-06-09
申请号：US912673
申请日：1986-09-25
申请人： Masami Yamaoka , Yukio Tsuzuki , Shoji Toyoshima
发明人： Masami Yamaoka , Yukio Tsuzuki , Shoji Toyoshima
IPC分类号： H01L29/73 , H01L21/331 , H01L29/866 , H01L29/868 , H01L29/90
CPC分类号： H01L29/868
摘要： In a semiconductor circuit device having a diode as an overvoltage protection element, a semiconductor substrate is comprised of an N-type collector substrate integral with a transistor. An N.sup.+ type collector diffusion layer is formed on the rear surface of the substrate. A P-type anode region and a N.sup.+ cathode region are formed in the major surface of the substrate so that they are spaced apart from each other and the N.sup.+ cathode region has the same type of impurity, but at a higher impurity concentration level than, the semiconductor substrate. An insulating film is formed on the surface of the resultant structure. A gate electrode is formed in an overlapping relation to the anode region and cathode region with an insulating film therebetween. A gate potential is established between the gate electrode and the underlying substrate.
摘要翻译：在具有二极管作为过电压保护元件的半导体电路器件中，半导体衬底由与晶体管集成的N型集电极基板构成。在基板的背面形成有N +型集电极扩散层。在基板的主表面上形成P型阳极区域和N +阴极区域，使得它们彼此间隔开，并且N +阴极区域具有相同类型的杂质，但是在较高的杂质浓度水平下，半导体衬底。在所得结构的表面上形成绝缘膜。与阳极区域和阴极区域之间具有绝缘膜的重叠关系形成栅电极。在栅极电极和下面的衬底之间建立栅极电位。

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